JPWO2022202286A1 - - Google Patents

Info

Publication number
JPWO2022202286A1
JPWO2022202286A1 JP2023508942A JP2023508942A JPWO2022202286A1 JP WO2022202286 A1 JPWO2022202286 A1 JP WO2022202286A1 JP 2023508942 A JP2023508942 A JP 2023508942A JP 2023508942 A JP2023508942 A JP 2023508942A JP WO2022202286 A1 JPWO2022202286 A1 JP WO2022202286A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023508942A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022202286A1 publication Critical patent/JPWO2022202286A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023508942A 2021-03-22 2022-03-08 Pending JPWO2022202286A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021047796 2021-03-22
PCT/JP2022/009941 WO2022202286A1 (ja) 2021-03-22 2022-03-08 固体撮像素子及びその製造方法

Publications (1)

Publication Number Publication Date
JPWO2022202286A1 true JPWO2022202286A1 (ja) 2022-09-29

Family

ID=83395128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023508942A Pending JPWO2022202286A1 (ja) 2021-03-22 2022-03-08

Country Status (4)

Country Link
EP (1) EP4318608A1 (ja)
JP (1) JPWO2022202286A1 (ja)
CN (1) CN116897432A (ja)
WO (1) WO2022202286A1 (ja)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141937A (ja) * 2005-11-15 2007-06-07 Canon Inc 固体撮像素子、半導体装置及び半導体装置の製造方法
JP2008153566A (ja) * 2006-12-20 2008-07-03 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2009277722A (ja) * 2008-05-12 2009-11-26 Panasonic Corp 固体撮像装置及びその製造方法
JP7014785B2 (ja) 2017-05-15 2022-02-01 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および撮像素子

Also Published As

Publication number Publication date
EP4318608A1 (en) 2024-02-07
CN116897432A (zh) 2023-10-17
WO2022202286A1 (ja) 2022-09-29

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