JPWO2022196741A1 - - Google Patents
Info
- Publication number
- JPWO2022196741A1 JPWO2022196741A1 JP2023507164A JP2023507164A JPWO2022196741A1 JP WO2022196741 A1 JPWO2022196741 A1 JP WO2022196741A1 JP 2023507164 A JP2023507164 A JP 2023507164A JP 2023507164 A JP2023507164 A JP 2023507164A JP WO2022196741 A1 JPWO2022196741 A1 JP WO2022196741A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Biophysics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Artificial Intelligence (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Molecular Biology (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- General Health & Medical Sciences (AREA)
- Computing Systems (AREA)
- Data Mining & Analysis (AREA)
- Computational Linguistics (AREA)
- Neurology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021044188 | 2021-03-17 | ||
PCT/JP2022/012083 WO2022196741A1 (ja) | 2021-03-17 | 2022-03-16 | 磁気抵抗効果素子、磁気メモリ及び人工知能システム |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2022196741A1 true JPWO2022196741A1 (ja) | 2022-09-22 |
Family
ID=83321089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023507164A Pending JPWO2022196741A1 (ja) | 2021-03-17 | 2022-03-16 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240244983A1 (ja) |
JP (1) | JPWO2022196741A1 (ja) |
KR (1) | KR20230158535A (ja) |
CN (1) | CN116998021A (ja) |
WO (1) | WO2022196741A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230210015A1 (en) * | 2021-12-23 | 2023-06-29 | Northwestern University | Antiferromagnetic memory device featuring tunneling magnetoresistance readout and current-induced writing of information |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6168578B2 (ja) | 2014-08-08 | 2017-07-26 | 国立大学法人東北大学 | 磁気抵抗効果素子、及び磁気メモリ装置 |
JP6778866B2 (ja) | 2015-03-31 | 2020-11-04 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路 |
JP5985728B1 (ja) * | 2015-09-15 | 2016-09-06 | 株式会社東芝 | 磁気メモリ |
US9899071B2 (en) * | 2016-01-20 | 2018-02-20 | The Johns Hopkins University | Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications |
US20170330070A1 (en) * | 2016-02-28 | 2017-11-16 | Purdue Research Foundation | Spin orbit torque based electronic neuron |
US11631804B2 (en) | 2018-02-13 | 2023-04-18 | Tohoku University | Magnetoresistive effect element and magnetic memory |
JP2020155488A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置 |
-
2022
- 2022-03-16 WO PCT/JP2022/012083 patent/WO2022196741A1/ja active Application Filing
- 2022-03-16 US US18/282,277 patent/US20240244983A1/en active Pending
- 2022-03-16 CN CN202280022035.8A patent/CN116998021A/zh active Pending
- 2022-03-16 KR KR1020237034779A patent/KR20230158535A/ko unknown
- 2022-03-16 JP JP2023507164A patent/JPWO2022196741A1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN116998021A (zh) | 2023-11-03 |
KR20230158535A (ko) | 2023-11-20 |
WO2022196741A1 (ja) | 2022-09-22 |
US20240244983A1 (en) | 2024-07-18 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A80 | Written request to apply exceptions to lack of novelty of invention |
Free format text: JAPANESE INTERMEDIATE CODE: A801 Effective date: 20230915 |
|
A80 | Written request to apply exceptions to lack of novelty of invention |
Free format text: JAPANESE INTERMEDIATE CODE: A80 Effective date: 20230915 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231030 |