JPWO2022172787A1 - - Google Patents

Info

Publication number
JPWO2022172787A1
JPWO2022172787A1 JP2022580558A JP2022580558A JPWO2022172787A1 JP WO2022172787 A1 JPWO2022172787 A1 JP WO2022172787A1 JP 2022580558 A JP2022580558 A JP 2022580558A JP 2022580558 A JP2022580558 A JP 2022580558A JP WO2022172787 A1 JPWO2022172787 A1 JP WO2022172787A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022580558A
Other versions
JPWO2022172787A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022172787A1 publication Critical patent/JPWO2022172787A1/ja
Publication of JPWO2022172787A5 publication Critical patent/JPWO2022172787A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022580558A 2021-02-15 2022-01-28 Pending JPWO2022172787A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021021700 2021-02-15
PCT/JP2022/003330 WO2022172787A1 (ja) 2021-02-15 2022-01-28 炭化珪素エピタキシャル基板

Publications (2)

Publication Number Publication Date
JPWO2022172787A1 true JPWO2022172787A1 (ja) 2022-08-18
JPWO2022172787A5 JPWO2022172787A5 (ja) 2023-11-07

Family

ID=82838797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022580558A Pending JPWO2022172787A1 (ja) 2021-02-15 2022-01-28

Country Status (2)

Country Link
JP (1) JPWO2022172787A1 (ja)
WO (1) WO2022172787A1 (ja)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02267197A (ja) * 1989-04-06 1990-10-31 Nec Corp 炭化硅素の成長方法
JPH02267196A (ja) * 1989-04-07 1990-10-31 Nec Corp 炭化硅素の選択的結晶成長方法
JP6122704B2 (ja) * 2013-06-13 2017-04-26 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
WO2016067918A1 (ja) * 2014-10-31 2016-05-06 富士電機株式会社 炭化珪素エピタキシャル膜の成長方法

Also Published As

Publication number Publication date
WO2022172787A1 (ja) 2022-08-18

Similar Documents

Publication Publication Date Title
BR112023012656A2 (ja)
BR102021018859A2 (ja)
BR102021015500A2 (ja)
BR102021007058A2 (ja)
BR102020022030A2 (ja)
JPWO2023282000A1 (ja)
BR112023016292A2 (ja)
JPWO2022172787A1 (ja)
JPWO2022153918A1 (ja)
BR102021018926A2 (ja)
BR102021018167A2 (ja)
BR102021017576A2 (ja)
JPWO2022054692A1 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016200A2 (ja)
BR102021016176A2 (ja)
BR102021015566A2 (ja)
BR102021015450A8 (ja)
BR102021014044A2 (ja)
BR102021013929A2 (ja)
BR102021012571A2 (ja)
BR102021012230A2 (ja)
BR102021012003A2 (ja)
BR102021012107A2 (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230711