JPWO2022149183A1 - - Google Patents
Info
- Publication number
- JPWO2022149183A1 JPWO2022149183A1 JP2022573814A JP2022573814A JPWO2022149183A1 JP WO2022149183 A1 JPWO2022149183 A1 JP WO2022149183A1 JP 2022573814 A JP2022573814 A JP 2022573814A JP 2022573814 A JP2022573814 A JP 2022573814A JP WO2022149183 A1 JPWO2022149183 A1 JP WO2022149183A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/000078 WO2022149183A1 (en) | 2021-01-05 | 2021-01-05 | Method for producing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022149183A1 true JPWO2022149183A1 (en) | 2022-07-14 |
JPWO2022149183A5 JPWO2022149183A5 (en) | 2023-12-19 |
Family
ID=82358113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022573814A Pending JPWO2022149183A1 (en) | 2021-01-05 | 2021-01-05 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2022149183A1 (en) |
TW (1) | TW202243282A (en) |
WO (1) | WO2022149183A1 (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812611B2 (en) * | 2015-04-03 | 2017-11-07 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting device |
JP6686172B2 (en) * | 2017-11-22 | 2020-04-22 | 創光科学株式会社 | Nitride semiconductor light emitting device |
-
2021
- 2021-01-05 JP JP2022573814A patent/JPWO2022149183A1/ja active Pending
- 2021-01-05 WO PCT/JP2021/000078 patent/WO2022149183A1/en active Application Filing
- 2021-11-02 TW TW110140773A patent/TW202243282A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2022149183A1 (en) | 2022-07-14 |
TW202243282A (en) | 2022-11-01 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231211 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20231211 |