JPWO2022091218A1 - - Google Patents
Info
- Publication number
- JPWO2022091218A1 JPWO2022091218A1 JP2021570524A JP2021570524A JPWO2022091218A1 JP WO2022091218 A1 JPWO2022091218 A1 JP WO2022091218A1 JP 2021570524 A JP2021570524 A JP 2021570524A JP 2021570524 A JP2021570524 A JP 2021570524A JP WO2022091218 A1 JPWO2022091218 A1 JP WO2022091218A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/040267 WO2022091218A1 (en) | 2020-10-27 | 2020-10-27 | Semiconductor device, power conversion device, and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022091218A1 true JPWO2022091218A1 (en) | 2022-05-05 |
| JP7074267B1 JP7074267B1 (en) | 2022-05-24 |
Family
ID=81382034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021570524A Active JP7074267B1 (en) | 2020-10-27 | 2020-10-27 | Manufacturing method of semiconductor device, power conversion device and semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7074267B1 (en) |
| WO (1) | WO2022091218A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014003191A (en) * | 2012-06-20 | 2014-01-09 | Hitachi Ltd | Semiconductor device |
| JP6830627B2 (en) * | 2016-12-22 | 2021-02-17 | 国立研究開発法人産業技術総合研究所 | Semiconductor devices and methods for manufacturing semiconductor devices |
| JP6946764B2 (en) * | 2017-06-09 | 2021-10-06 | 富士電機株式会社 | Semiconductor devices and manufacturing methods for semiconductor devices |
| JP7176239B2 (en) * | 2018-06-14 | 2022-11-22 | 富士電機株式会社 | semiconductor equipment |
| US11894428B2 (en) * | 2019-03-18 | 2024-02-06 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and power converter |
-
2020
- 2020-10-27 JP JP2021570524A patent/JP7074267B1/en active Active
- 2020-10-27 WO PCT/JP2020/040267 patent/WO2022091218A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022091218A1 (en) | 2022-05-05 |
| JP7074267B1 (en) | 2022-05-24 |
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