JPWO2022091173A1 - - Google Patents

Info

Publication number
JPWO2022091173A1
JPWO2022091173A1 JP2022558606A JP2022558606A JPWO2022091173A1 JP WO2022091173 A1 JPWO2022091173 A1 JP WO2022091173A1 JP 2022558606 A JP2022558606 A JP 2022558606A JP 2022558606 A JP2022558606 A JP 2022558606A JP WO2022091173 A1 JPWO2022091173 A1 JP WO2022091173A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022558606A
Other languages
Japanese (ja)
Other versions
JPWO2022091173A5 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022091173A1 publication Critical patent/JPWO2022091173A1/ja
Publication of JPWO2022091173A5 publication Critical patent/JPWO2022091173A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
JP2022558606A 2020-10-26 2020-10-26 Pending JPWO2022091173A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/040069 WO2022091173A1 (en) 2020-10-26 2020-10-26 Nitride semiconductor ultraviolet light emitting element

Publications (2)

Publication Number Publication Date
JPWO2022091173A1 true JPWO2022091173A1 (en) 2022-05-05
JPWO2022091173A5 JPWO2022091173A5 (en) 2023-10-10

Family

ID=81383745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022558606A Pending JPWO2022091173A1 (en) 2020-10-26 2020-10-26

Country Status (3)

Country Link
JP (1) JPWO2022091173A1 (en)
TW (1) TW202218178A (en)
WO (1) WO2022091173A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012012010A2 (en) * 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
CN111712930B (en) * 2018-02-14 2023-09-12 日机装株式会社 Nitride semiconductor ultraviolet light emitting element
JP7312056B2 (en) * 2019-01-07 2023-07-20 日機装株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
JP6793863B2 (en) * 2019-01-22 2020-12-02 Ｄｏｗａエレクトロニクス株式会社 Manufacturing method of reflective electrode for deep ultraviolet light emitting element, manufacturing method of deep ultraviolet light emitting element and deep ultraviolet light emitting element

Also Published As

Publication number Publication date
WO2022091173A1 (en) 2022-05-05
TW202218178A (en) 2022-05-01

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230929

A621 Written request for application examination

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Effective date: 20230929