JPWO2022079913A1 - - Google Patents

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Publication number
JPWO2022079913A1
JPWO2022079913A1 JP2021523314A JP2021523314A JPWO2022079913A1 JP WO2022079913 A1 JPWO2022079913 A1 JP WO2022079913A1 JP 2021523314 A JP2021523314 A JP 2021523314A JP 2021523314 A JP2021523314 A JP 2021523314A JP WO2022079913 A1 JPWO2022079913 A1 JP WO2022079913A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021523314A
Other languages
Japanese (ja)
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JP6941403B1 (en
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Publication of JP6941403B1 publication Critical patent/JP6941403B1/en
Publication of JPWO2022079913A1 publication Critical patent/JPWO2022079913A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP2021523314A 2020-10-16 2020-10-16 Semiconductor light receiving element Active JP6941403B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/039131 WO2022079913A1 (en) 2020-10-16 2020-10-16 Semiconductor light-receiving element

Publications (2)

Publication Number Publication Date
JP6941403B1 JP6941403B1 (en) 2021-09-29
JPWO2022079913A1 true JPWO2022079913A1 (en) 2022-04-21

Family

ID=77847020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021523314A Active JP6941403B1 (en) 2020-10-16 2020-10-16 Semiconductor light receiving element

Country Status (2)

Country Link
JP (1) JP6941403B1 (en)
WO (1) WO2022079913A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001320081A (en) * 2000-05-12 2001-11-16 Fujitsu Ltd Semiconductor light receiving element
JP4755854B2 (en) * 2005-06-02 2011-08-24 富士通株式会社 Semiconductor light receiving device and manufacturing method thereof
JP5427531B2 (en) * 2009-09-29 2014-02-26 三菱重工業株式会社 Photodetection element, photodetection device, infrared detection element, infrared detection device
JP2011124450A (en) * 2009-12-11 2011-06-23 Nec Corp Semiconductor light reception element
CN109461778A (en) * 2018-10-31 2019-03-12 中国电子科技集团公司第四十四研究所 A kind of structure and production method improving back-illuminated photodiode responsiveness

Also Published As

Publication number Publication date
WO2022079913A1 (en) 2022-04-21
JP6941403B1 (en) 2021-09-29

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