JPWO2022079913A1 - - Google Patents
Info
- Publication number
- JPWO2022079913A1 JPWO2022079913A1 JP2021523314A JP2021523314A JPWO2022079913A1 JP WO2022079913 A1 JPWO2022079913 A1 JP WO2022079913A1 JP 2021523314 A JP2021523314 A JP 2021523314A JP 2021523314 A JP2021523314 A JP 2021523314A JP WO2022079913 A1 JPWO2022079913 A1 JP WO2022079913A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/039131 WO2022079913A1 (en) | 2020-10-16 | 2020-10-16 | Semiconductor light-receiving element |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6941403B1 JP6941403B1 (en) | 2021-09-29 |
JPWO2022079913A1 true JPWO2022079913A1 (en) | 2022-04-21 |
Family
ID=77847020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021523314A Active JP6941403B1 (en) | 2020-10-16 | 2020-10-16 | Semiconductor light receiving element |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6941403B1 (en) |
WO (1) | WO2022079913A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001320081A (en) * | 2000-05-12 | 2001-11-16 | Fujitsu Ltd | Semiconductor light receiving element |
JP4755854B2 (en) * | 2005-06-02 | 2011-08-24 | 富士通株式会社 | Semiconductor light receiving device and manufacturing method thereof |
JP5427531B2 (en) * | 2009-09-29 | 2014-02-26 | 三菱重工業株式会社 | Photodetection element, photodetection device, infrared detection element, infrared detection device |
JP2011124450A (en) * | 2009-12-11 | 2011-06-23 | Nec Corp | Semiconductor light reception element |
CN109461778A (en) * | 2018-10-31 | 2019-03-12 | 中国电子科技集团公司第四十四研究所 | A kind of structure and production method improving back-illuminated photodiode responsiveness |
-
2020
- 2020-10-16 WO PCT/JP2020/039131 patent/WO2022079913A1/en active Application Filing
- 2020-10-16 JP JP2021523314A patent/JP6941403B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2022079913A1 (en) | 2022-04-21 |
JP6941403B1 (en) | 2021-09-29 |
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