JPWO2021200203A1 - - Google Patents

Info

Publication number
JPWO2021200203A1
JPWO2021200203A1 JP2022511877A JP2022511877A JPWO2021200203A1 JP WO2021200203 A1 JPWO2021200203 A1 JP WO2021200203A1 JP 2022511877 A JP2022511877 A JP 2022511877A JP 2022511877 A JP2022511877 A JP 2022511877A JP WO2021200203 A1 JPWO2021200203 A1 JP WO2021200203A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022511877A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021200203A1 publication Critical patent/JPWO2021200203A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022511877A 2020-03-30 2021-03-18 Pending JPWO2021200203A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020059271 2020-03-30
PCT/JP2021/011025 WO2021200203A1 (en) 2020-03-30 2021-03-18 Diamond crystal substrate and method for producing diamond crystal substrate

Publications (1)

Publication Number Publication Date
JPWO2021200203A1 true JPWO2021200203A1 (en) 2021-10-07

Family

ID=77929278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511877A Pending JPWO2021200203A1 (en) 2020-03-30 2021-03-18

Country Status (2)

Country Link
JP (1) JPWO2021200203A1 (en)
WO (1) WO2021200203A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115874282A (en) * 2022-11-23 2023-03-31 吉林大学 Method for improving splicing growth quality of large-area single crystal diamond
CN118147747A (en) * 2024-05-11 2024-06-07 山东天岳先进科技股份有限公司 Large-size high-quality diamond crystal and application thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3774904B2 (en) * 1994-01-27 2006-05-17 住友電気工業株式会社 Method for synthesizing flat diamond film, diamond free-standing film, and polishing method for diamond film
JP3212057B2 (en) * 1994-09-05 2001-09-25 東洋鋼鈑株式会社 Diamond coated substrate and method for producing the same

Also Published As

Publication number Publication date
WO2021200203A1 (en) 2021-10-07

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Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240315