JPWO2021177001A1 - - Google Patents

Info

Publication number
JPWO2021177001A1
JPWO2021177001A1 JP2022505090A JP2022505090A JPWO2021177001A1 JP WO2021177001 A1 JPWO2021177001 A1 JP WO2021177001A1 JP 2022505090 A JP2022505090 A JP 2022505090A JP 2022505090 A JP2022505090 A JP 2022505090A JP WO2021177001 A1 JPWO2021177001 A1 JP WO2021177001A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022505090A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021177001A1 publication Critical patent/JPWO2021177001A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02253Out-coupling of light using lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4062Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/1006Beam splitting or combining systems for splitting or combining different wavelengths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0206Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021Silicon based substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143Littman-Metcalf configuration, e.g. laser - grating - mirror
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
JP2022505090A 2020-03-05 2021-02-12 Pending JPWO2021177001A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020037680 2020-03-05
PCT/JP2021/005367 WO2021177001A1 (ja) 2020-03-05 2021-02-12 半導体レーザ装置

Publications (1)

Publication Number Publication Date
JPWO2021177001A1 true JPWO2021177001A1 (ja) 2021-09-10

Family

ID=77613322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022505090A Pending JPWO2021177001A1 (ja) 2020-03-05 2021-02-12

Country Status (5)

Country Link
US (1) US20230108080A1 (ja)
JP (1) JPWO2021177001A1 (ja)
CN (1) CN115244802A (ja)
DE (1) DE112021001421T5 (ja)
WO (1) WO2021177001A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120621A (ja) * 2012-12-17 2014-06-30 Mitsubishi Electric Corp 半導体レーザ装置
US9690107B2 (en) * 2013-03-15 2017-06-27 Trumpf Laser Gmbh Device for wavelength combining of laser beams
DE102013105467B4 (de) * 2013-05-28 2016-11-03 Lumics Gmbh Diodenlaser, Laserbearbeitungsvorrichtung und Laserbehandlungsvorrichtung
US9391713B2 (en) * 2013-10-14 2016-07-12 Trumpf Laser Gmbh High brightness dense wavelength multiplexing laser
JP2016096333A (ja) * 2014-11-10 2016-05-26 三菱電機株式会社 半導体レーザ装置
CN109642997B (zh) * 2016-08-26 2020-12-25 株式会社岛津制作所 发光装置
WO2018167975A1 (ja) * 2017-03-17 2018-09-20 三菱電機株式会社 レーザ発振装置
JPWO2019155668A1 (ja) * 2018-02-07 2020-02-27 三菱電機株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
CN115244802A (zh) 2022-10-25
DE112021001421T5 (de) 2023-01-12
WO2021177001A1 (ja) 2021-09-10
US20230108080A1 (en) 2023-04-06

Similar Documents

Publication Publication Date Title
BR112023012656A2 (ja)
BR112021014123A2 (ja)
BR102021018859A2 (ja)
BR102021015500A2 (ja)
BR102021007058A2 (ja)
BR102020022030A2 (ja)
BR112023016292A2 (ja)
BR112023011539A2 (ja)
BR112023008976A2 (ja)
BR112023009656A2 (ja)
BR102021020147A2 (ja)
BR102021018926A2 (ja)
BR102021018167A2 (ja)
BR102021017576A2 (ja)
BR102021016837A2 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016200A2 (ja)
BR102021016176A2 (ja)
BR102021015566A2 (ja)
BR102021015220A2 (ja)
BR102021014056A2 (ja)
BR102021013929A2 (ja)
BR102021012571A2 (ja)
BR102021012230A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231120