JPWO2021149380A1 - - Google Patents
Info
- Publication number
- JPWO2021149380A1 JPWO2021149380A1 JP2021572994A JP2021572994A JPWO2021149380A1 JP WO2021149380 A1 JPWO2021149380 A1 JP WO2021149380A1 JP 2021572994 A JP2021572994 A JP 2021572994A JP 2021572994 A JP2021572994 A JP 2021572994A JP WO2021149380 A1 JPWO2021149380 A1 JP WO2021149380A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020009955 | 2020-01-24 | ||
PCT/JP2020/045690 WO2021149380A1 (en) | 2020-01-24 | 2020-12-08 | Imaging device, method for manufacturing imaging device, and electronic apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2021149380A1 true JPWO2021149380A1 (en) | 2021-07-29 |
Family
ID=76991687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021572994A Pending JPWO2021149380A1 (en) | 2020-01-24 | 2020-12-08 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2021149380A1 (en) |
WO (1) | WO2021149380A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023074215A1 (en) * | 2021-10-28 | 2023-05-04 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device and imaging device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4682407A (en) * | 1986-01-21 | 1987-07-28 | Motorola, Inc. | Means and method for stabilizing polycrystalline semiconductor layers |
JPH01173713A (en) * | 1987-12-28 | 1989-07-10 | Mitsubishi Electric Corp | Semiconductor device |
JPH1098187A (en) * | 1996-09-20 | 1998-04-14 | Nec Corp | Manufacture of semiconductor device |
JPH11214683A (en) * | 1998-01-26 | 1999-08-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device and the semiconductor device |
JP2000031475A (en) * | 1998-07-10 | 2000-01-28 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
JP3180781B2 (en) * | 1998-10-22 | 2001-06-25 | 日本電気株式会社 | Method for manufacturing MOS type semiconductor device |
JP3267257B2 (en) * | 1998-12-16 | 2002-03-18 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JP2001210593A (en) * | 2000-01-24 | 2001-08-03 | Fuji Film Microdevices Co Ltd | Method for forming polycrystalline silicone film and semiconductor device |
JP2003037266A (en) * | 2001-07-25 | 2003-02-07 | Toshiba Corp | Semiconductor device and manufacturing method therefor |
JP5515434B2 (en) * | 2009-06-03 | 2014-06-11 | ソニー株式会社 | Semiconductor device and manufacturing method thereof, solid-state imaging device |
JP5581954B2 (en) * | 2010-10-07 | 2014-09-03 | ソニー株式会社 | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus |
JP2016039315A (en) * | 2014-08-08 | 2016-03-22 | 株式会社東芝 | Solid state image sensor |
-
2020
- 2020-12-08 WO PCT/JP2020/045690 patent/WO2021149380A1/en active Application Filing
- 2020-12-08 JP JP2021572994A patent/JPWO2021149380A1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2021149380A1 (en) | 2021-07-29 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20231012 |