JPWO2021100398A1 - - Google Patents

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Publication number
JPWO2021100398A1
JPWO2021100398A1 JP2021558234A JP2021558234A JPWO2021100398A1 JP WO2021100398 A1 JPWO2021100398 A1 JP WO2021100398A1 JP 2021558234 A JP2021558234 A JP 2021558234A JP 2021558234 A JP2021558234 A JP 2021558234A JP WO2021100398 A1 JPWO2021100398 A1 JP WO2021100398A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021558234A
Other versions
JP7301151B2 (ja
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Publication of JPWO2021100398A1 publication Critical patent/JPWO2021100398A1/ja
Application granted granted Critical
Publication of JP7301151B2 publication Critical patent/JP7301151B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
JP2021558234A 2019-11-22 2020-10-22 下層膜形成用組成物、レジストパターン形成方法、電子デバイスの製造方法 Active JP7301151B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019211566 2019-11-22
JP2019211566 2019-11-22
PCT/JP2020/039638 WO2021100398A1 (ja) 2019-11-22 2020-10-22 下層膜形成用組成物、レジストパターン形成方法、電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
JPWO2021100398A1 true JPWO2021100398A1 (ja) 2021-05-27
JP7301151B2 JP7301151B2 (ja) 2023-06-30

Family

ID=75981635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021558234A Active JP7301151B2 (ja) 2019-11-22 2020-10-22 下層膜形成用組成物、レジストパターン形成方法、電子デバイスの製造方法

Country Status (3)

Country Link
US (1) US20220252985A1 (ja)
JP (1) JP7301151B2 (ja)
WO (1) WO2021100398A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304490A (ja) * 2006-05-15 2007-11-22 Shin Etsu Chem Co Ltd 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
US20120153424A1 (en) * 2010-12-17 2012-06-21 Seung-Bae Oh Hardmask composition, method of forming a pattern using the same, and semiconductor integrated circuit device including the pattern
JP2013224279A (ja) * 2012-04-23 2013-10-31 Shin-Etsu Chemical Co Ltd ケイ素化合物、ケイ素含有化合物、これを含むレジスト下層膜形成用組成物及びパターン形成方法
WO2019059202A1 (ja) * 2017-09-19 2019-03-28 三菱瓦斯化学株式会社 半導体リソグラフィー膜形成組成物、並びにレジストパターン形成方法及びデバイス
WO2019082934A1 (ja) * 2017-10-25 2019-05-02 日産化学株式会社 アンモニウム基を有する有機基を含むシリコン含有レジスト下層膜形成組成物を用いる半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304490A (ja) * 2006-05-15 2007-11-22 Shin Etsu Chem Co Ltd 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
US20120153424A1 (en) * 2010-12-17 2012-06-21 Seung-Bae Oh Hardmask composition, method of forming a pattern using the same, and semiconductor integrated circuit device including the pattern
JP2013224279A (ja) * 2012-04-23 2013-10-31 Shin-Etsu Chemical Co Ltd ケイ素化合物、ケイ素含有化合物、これを含むレジスト下層膜形成用組成物及びパターン形成方法
WO2019059202A1 (ja) * 2017-09-19 2019-03-28 三菱瓦斯化学株式会社 半導体リソグラフィー膜形成組成物、並びにレジストパターン形成方法及びデバイス
WO2019082934A1 (ja) * 2017-10-25 2019-05-02 日産化学株式会社 アンモニウム基を有する有機基を含むシリコン含有レジスト下層膜形成組成物を用いる半導体装置の製造方法

Also Published As

Publication number Publication date
US20220252985A1 (en) 2022-08-11
JP7301151B2 (ja) 2023-06-30
WO2021100398A1 (ja) 2021-05-27

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