JPWO2021024818A1 - - Google Patents
Info
- Publication number
- JPWO2021024818A1 JPWO2021024818A1 JP2021537698A JP2021537698A JPWO2021024818A1 JP WO2021024818 A1 JPWO2021024818 A1 JP WO2021024818A1 JP 2021537698 A JP2021537698 A JP 2021537698A JP 2021537698 A JP2021537698 A JP 2021537698A JP WO2021024818 A1 JPWO2021024818 A1 JP WO2021024818A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019146779 | 2019-08-08 | ||
PCT/JP2020/028534 WO2021024818A1 (ja) | 2019-08-08 | 2020-07-22 | グラフェン作製方法、及び光デバイスの作製方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2021024818A1 true JPWO2021024818A1 (ja) | 2021-02-11 |
Family
ID=74503545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021537698A Pending JPWO2021024818A1 (ja) | 2019-08-08 | 2020-07-22 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2021024818A1 (ja) |
WO (1) | WO2021024818A1 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5462737B2 (ja) * | 2010-01-21 | 2014-04-02 | 株式会社日立製作所 | グラフェン膜が成長された基板およびそれを用いた電子・光集積回路装置 |
KR101271951B1 (ko) * | 2011-05-27 | 2013-06-07 | 포항공과대학교 산학협력단 | 탄소 박막 제조 방법 |
JP6708397B2 (ja) * | 2015-11-27 | 2020-06-10 | 学校法人 名城大学 | グラフェン基板の製造方法 |
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2020
- 2020-07-22 JP JP2021537698A patent/JPWO2021024818A1/ja active Pending
- 2020-07-22 WO PCT/JP2020/028534 patent/WO2021024818A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2021024818A1 (ja) | 2021-02-11 |
Similar Documents
Legal Events
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|
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