JPWO2021020502A1 - - Google Patents

Info

Publication number
JPWO2021020502A1
JPWO2021020502A1 JP2021535419A JP2021535419A JPWO2021020502A1 JP WO2021020502 A1 JPWO2021020502 A1 JP WO2021020502A1 JP 2021535419 A JP2021535419 A JP 2021535419A JP 2021535419 A JP2021535419 A JP 2021535419A JP WO2021020502 A1 JPWO2021020502 A1 JP WO2021020502A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021535419A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021020502A1 publication Critical patent/JPWO2021020502A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2021535419A 2019-07-31 2020-07-30 Pending JPWO2021020502A1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019141012 2019-07-31
PCT/JP2020/029211 WO2021020502A1 (ja) 2019-07-31 2020-07-30 ガスノズルおよびそれを用いたプラズマ処理用装置

Publications (1)

Publication Number Publication Date
JPWO2021020502A1 true JPWO2021020502A1 (ko) 2021-02-04

Family

ID=74229242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021535419A Pending JPWO2021020502A1 (ko) 2019-07-31 2020-07-30

Country Status (2)

Country Link
JP (1) JPWO2021020502A1 (ko)
WO (1) WO2021020502A1 (ko)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285845A (ja) * 2004-03-26 2005-10-13 Ibiden Co Ltd プラズマエッチング装置のガス吹き出し板
JP2007063595A (ja) * 2005-08-30 2007-03-15 Toshiba Ceramics Co Ltd Ｙ２ｏ３焼結体からなるセラミックガスノズル
WO2013065666A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 ガスノズル、これを用いたプラズマ装置およびガスノズルの製造方法
WO2014119177A1 (ja) * 2013-01-30 2014-08-07 京セラ株式会社 ガスノズルおよびこれを用いたプラズマ装置
JP2018019017A (ja) * 2016-07-29 2018-02-01 京セラ株式会社 載置用部材
WO2018101332A1 (ja) * 2016-11-29 2018-06-07 京セラ株式会社 時計ケース
JP2019069892A (ja) * 2007-04-27 2019-05-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハロゲン含有プラズマに露出された表面の浸食速度を減じる装置及び方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285845A (ja) * 2004-03-26 2005-10-13 Ibiden Co Ltd プラズマエッチング装置のガス吹き出し板
JP2007063595A (ja) * 2005-08-30 2007-03-15 Toshiba Ceramics Co Ltd Ｙ２ｏ３焼結体からなるセラミックガスノズル
JP2019069892A (ja) * 2007-04-27 2019-05-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハロゲン含有プラズマに露出された表面の浸食速度を減じる装置及び方法
WO2013065666A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 ガスノズル、これを用いたプラズマ装置およびガスノズルの製造方法
WO2014119177A1 (ja) * 2013-01-30 2014-08-07 京セラ株式会社 ガスノズルおよびこれを用いたプラズマ装置
JP2018019017A (ja) * 2016-07-29 2018-02-01 京セラ株式会社 載置用部材
WO2018101332A1 (ja) * 2016-11-29 2018-06-07 京セラ株式会社 時計ケース

Also Published As

Publication number Publication date
WO2021020502A1 (ja) 2021-02-04

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