JPWO2020241578A1 - - Google Patents

Info

Publication number
JPWO2020241578A1
JPWO2020241578A1 JP2021522755A JP2021522755A JPWO2020241578A1 JP WO2020241578 A1 JPWO2020241578 A1 JP WO2020241578A1 JP 2021522755 A JP2021522755 A JP 2021522755A JP 2021522755 A JP2021522755 A JP 2021522755A JP WO2020241578 A1 JPWO2020241578 A1 JP WO2020241578A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021522755A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020241578A1 publication Critical patent/JPWO2020241578A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021522755A 2019-05-27 2020-05-25 Pending JPWO2020241578A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019098445 2019-05-27
PCT/JP2020/020570 WO2020241578A1 (en) 2019-05-27 2020-05-25 METHOD FOR PRODUCING SiC SINGLE CRYSTAL INGOT

Publications (1)

Publication Number Publication Date
JPWO2020241578A1 true JPWO2020241578A1 (en) 2020-12-03

Family

ID=73553213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021522755A Pending JPWO2020241578A1 (en) 2019-05-27 2020-05-25

Country Status (2)

Country Link
JP (1) JPWO2020241578A1 (en)
WO (1) WO2020241578A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4514339B2 (en) * 1998-12-25 2010-07-28 昭和電工株式会社 Method and apparatus for growing silicon carbide single crystal
JP4844470B2 (en) * 2007-05-09 2011-12-28 パナソニック株式会社 Seed crystal fixation method
JP2010111540A (en) * 2008-11-06 2010-05-20 Showa Denko Kk Method for growing silicon carbide single crystal, seed crystal, and silicon carbide single crystal
JP4985625B2 (en) * 2008-12-02 2012-07-25 三菱電機株式会社 Method for producing silicon carbide single crystal
JP2011241096A (en) * 2010-05-14 2011-12-01 Mitsubishi Electric Corp Method for producing silicon carbide single crystal

Also Published As

Publication number Publication date
WO2020241578A1 (en) 2020-12-03

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