JPWO2020185539A5

JPWO2020185539A5 -

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Publication number: JPWO2020185539A5
Application number: JP2021554600A
Authority: JP
Publication date: 2023-03-13

Description

いくつかのそのような実施形態では、第１の基板上の材料の第１の層は、第１の値の性質を有してよく、第２の基板上の材料の第２の層は、第２の値の性質を有してよく、第１の基板上の材料の第３の層は、第１の値と異なる第３の値の性質を有してよく、第２の基板上の材料の第４の層は、第２の値と異なる第４の値の性質を有してよい。 In some such embodiments, a first layer of material on a first substrate may have a property of a first value, and a second layer of material on a second substrate is: A third layer of material on the first substrate may have a property of a third value different from the first value; A fourth layer of material may have a property of a fourth value different from the second value.

システムコントローラ２３８は、プロセッサ２４４上で機械可読システム制御命令２５０を実行してよく、システム制御命令２５０は、いくつかの実装形態では、大容量記憶装置２４６から記憶素子２４４の中にロードされる。システム制御命令２５０は、タイミング、ガス反応物および液体反応物の混合、チャンバおよび／またはステーションの圧力、チャンバおよび／またはステーションの温度、ウエハ温度、目標電力レベル、ＲＦ電力レベル、ＲＦ曝露時間、ならびに基板、基板台座、チャック、および／またはサセプタ位置をクランプするためのＤＣ電力および継続時間、各ステーションでのプラズマ形成、ガス反応物および液体反応物の流れ、台座の垂直高さ、ならびに処理ツール２００が遂行する特定の処理の他のパラメータを制御するための命令を含んでよい。これらの処理は、基板の上に膜を堆積させることに関係する処理を含むがそれに限定されないさまざまなタイプの処理を含んでよい。システム制御命令２５０は、任意の適切な方法で構成されてよい。 System controller 238 may execute machine-readable system control instructions 250 on processor 244 , which in some implementations are loaded into memory element 244 from mass storage device 246 . System control instructions 250 control timing, mixing of gas and liquid reactants, chamber and/or station pressure, chamber and/or station temperature, wafer temperature, target power level, RF power level, RF exposure time, and DC power and duration for clamping the substrate, substrate pedestal, chuck, and/or susceptor position, plasma formation at each station, gas and liquid reactant flows, pedestal vertical height, and processing tool 200 may include instructions for controlling other parameters of the particular process performed by . These processes may include various types of processes including, but not limited to, processes related to depositing films on substrates. System control instructions 250 may be configured in any suitable manner.

いくつかの実装形態では、システム制御ソフトウェア２５８は、上記で記述するさまざまなパラメータを制御するための入力／出力制御（ＩＯＣ）命令を含んでよい。たとえば、１つまたは複数の堆積処理の各ステップは、システムコントローラ２３８が実行するための１つまたは複数の命令を含んでよい。たとえば一次膜堆積処理のための処理条件を設定するための命令は、対応する堆積レシピに含まれてよく、同様にキャッピング膜堆積のための処理条件を設定するための命令は、対応する堆積レシピに含まれてよい。いくつかの実装形態では、処理レシピは連続的に配列され、その結果、処理用のすべての命令は、その処理で同時発生的に実行される。 In some implementations, system control software 258 may include input/output control (IOC) instructions for controlling the various parameters described above. For example, each step of one or more deposition processes may include one or more instructions for system controller 238 to execute. For example, instructions for setting process conditions for a primary film deposition process may be included in a corresponding deposition recipe; similarly, instructions for setting process conditions for a capping film deposition may be included in a corresponding deposition recipe. may be included in In some implementations, process recipes are arranged sequentially so that all instructions for a process are executed concurrently in that process.

いくつかの実装形態では、システムコントローラ２３８に関連する大容量記憶装置２４６および／または記憶素子２４４に記憶された他のコンピュータ可読命令および／またはプログラムを採用してよい。プログラムまたはプログラムのセクションの例は、基板位置決めプログラム、処理ガス制御プログラム、圧力制御プロフラム、ヒータ制御プログラム、およびプラズマ制御プログラムを含む。 Some implementations may employ other computer readable instructions and/or programs stored in the mass storage device 246 and/or storage element 244 associated with the system controller 238 . Examples of programs or sections of programs include a substrate positioning program, a process gas control program, a pressure control program, a heater control program, and a plasma control program.

いくつかの実装形態では、システムコントローラ２３８に関連するユーザインタフェースが存在してよい。ユーザインタフェースは、表示画面、装置および／または処理条件のグラフィカルソフトウェア表示、ならびにポインティング機器、キーボード、タッチ画面、マイクロホンなどのようなユーザ入力機器を含んでよい。 In some implementations, there may be a user interface associated with system controller 238 . User interfaces may include display screens, graphical software representations of apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, and the like.

いくつかの実装形態では、システムコントローラ２３８が調節するパラメータは、処理条件に関係がある。限定しない例は、処理ガスの組成および流量、温度、圧力、プラズマ条件（ＲＦバイアス電力レベル、周波数、曝露時間など）などを含む。追加で、コントローラは、処理ステーション内の条件を独立して制御するように構成されてよく、たとえば、コントローラは、すべてのステーションではなく一部のステーションでプラズマを点火する命令を提供する。これらのパラメータは、ユーザインタフェースを利用して入力されてよいレシピの形でユーザに提供されてよい。 In some implementations, the parameters that system controller 238 adjusts relate to process conditions. Non-limiting examples include process gas composition and flow rates, temperature, pressure, plasma conditions (RF bias power level, frequency, exposure time, etc.), and the like. Additionally, the controller may be configured to independently control conditions within the processing stations, eg, the controller provides instructions to ignite the plasma in some but not all stations. These parameters may be provided to the user in the form of a recipe that may be entered using the user interface.

処理を監視するための信号は、システムコントローラ２３８のアナログおよび／またはデジタルの入力接続によりさまざまな処理ツールセンサから提供されてよい。処理を制御するための信号を処理ツール２００のアナログおよび／またはデジタルの出力接続に出力してよい。監視されてよい処理ツールセンサの限定しない例は、質量流コントローラ（ｍａｓｓｆｌｏｗｃｏｎｔｒｏｌｌｅｒ、ＭＦＣ）、圧力センサ（圧力計など）、熱電対、荷重センサ、ＯＥＳセンサ、波の物理特性を本来の場所で（ｉｎ－ｓｉｔｕ）測定するための度量衡設備などを含む。これらのセンサから得られるデータと共に、適切にプログラムされたフィードバックおよび制御アルゴリズムを使用して、処理条件を維持してよい。 Signals for monitoring the process may be provided from various process tool sensors through analog and/or digital input connections of system controller 238 . Signals for controlling processing may be output to analog and/or digital output connections of processing tool 200 . Non-limiting examples of process tool sensors that may be monitored include mass flow controllers (MFCs), pressure sensors (such as pressure gauges), thermocouples, load sensors, OES sensors, wave physics in situ Including metrology equipment for (in-situ) measurements. Appropriately programmed feedback and control algorithms may be used in conjunction with data obtained from these sensors to maintain process conditions.

技法のその他の例のすべては、全堆積処理の一方の部分で各同時プラズマ発生および堆積ブロックを特定数の堆積サイクルの間遂行するように同様に遂行されてよい。別の例では、図１１の技法の第６の例では、全堆積処理は２つの部分を有してよく、第１の部分はＮサイクルを有し、第２の部分はＺサイクルを有する。図１４は、図１１の技法の同じ第６の例を示す、技法の別の例を描く。この場合、ブロック１１０５に対応するブロック１４０５は、ブロック１４０５をＮ回遂行するように第１の部分のＮサイクルの各々で遂行され、次いでブロック１４０７は、ブロック１４０７をＺ回遂行するように第２の部分のＺサイクルの各々で遂行される。 All of the other examples of techniques may be similarly performed such that each simultaneous plasma generation and deposition block is performed for a specified number of deposition cycles in one portion of the overall deposition process. In another example, in the sixth example of the technique of FIG. 11, the total deposition process may have two parts, the first part having N cycles and the second part having Z cycles. FIG. 14 depicts another example of the technique showing the same sixth example of the technique of FIG. In this case, block 1405, corresponding to block 1105, is performed each of the N cycles of the first portion to perform block 1405 N times, then block 1407 is performed on the second portion to perform block 1407 Z times. is performed on each of the Z cycles of the portion of .

実装形態１０：マルチステーション堆積装置であって、装置は、処理チャンバと、第１のシャワーヘッド、および第１のシャワーヘッドに関して垂直に動くように構成された第１の台座を含む、処理チャンバ内の第１の処理ステーションと、第２のシャワーヘッド、および第２のシャワーヘッドに関して垂直に動くように構成された第２の台座を含む、処理チャンバ内の第２の処理ステーションと、マルチステーション堆積装置を制御して、第１のステーションおよび第２のステーションで基板の上に材料を堆積させるためのコントローラとを備え、コントローラは、第１の台座に第１の基板を提供し、第２の台座に第２の基板を提供し、第１の台座が第１のシャワーヘッドから第１の距離だけ分離されるように第１の台座を動かし、第２の台座が第２のシャワーヘッドから第１の距離だけ分離されるように第２の台座を動かし、同時に、第１の台座が第１のシャワーヘッドから第１の距離だけ分離されている間に第１のステーションで第１のプラズマを発生させ、それにより第１の基板の上に材料の第１の層を堆積させ、第２の台座が第２のシャワーヘッドから第１の距離だけ分離されている間に第２のステーションで第２のプラズマを発生させ、それにより第２の基板の上に材料の第２の層を堆積させ、第１のプラズマおよび第２のプラズマを同時に発生させた後、第１の台座が第１のシャワーヘッドから第２の距離だけ分離されるように第１の台座を動かし、第１のプラズマおよび第２のプラズマを同時に堆積させた後、第２の台座が第２のシャワーヘッドから第２の距離だけ分離されるように第２の台座を動かし、同時に、第１の台座が第１のシャワーヘッドから第２の距離だけ分離されている間に第１のステーションで第３のプラズマを発生させ、それにより第１の基板の上に材料の第３の層を堆積させ、第２の台座が第２のシャワーヘッドから第２の距離だけ分離されている間に第２のステーションで第４のプラズマを発生させ、それにより第２の基板の上に材料の第４の層を堆積させるための制御論理を備えるマルチステーション堆積装置。 Implementation 10: A multi-station deposition apparatus, the apparatus including a processing chamber, a first showerhead, and a first pedestal configured to move vertically with respect to the first showerhead, within the processing chamber a second processing station in a processing chamber including a second showerhead and a second pedestal configured to move vertically with respect to the second showerhead; a controller for controlling the apparatus to deposit material on the substrate at the first station and the second station, the controller providing the first substrate on the first pedestal and the second substrate; providing a second substrate on the pedestal; moving the first pedestal such that the first pedestal is separated from the first showerhead by a first distance; moving the second pedestal so that it is separated by a distance of one and, at the same time, generating the first plasma at the first station while the first pedestal is separated from the first showerhead by the first distance; generating thereby depositing a first layer of material on the first substrate and a second pedestal at a second station while the second pedestal is separated from the second showerhead by a first distance. After generating two plasmas thereby depositing a second layer of material on the second substrate and simultaneously generating the first and second plasmas, the first pedestal is deposited on the first substrate. After moving the first pedestal to be separated from the showerhead by a second distance and simultaneously depositing the first plasma and the second plasma, the second pedestal moves from the second showerhead to the second plasma. moving the second pedestal so that it is separated by a distance while simultaneously generating a third plasma at the first station while the first pedestal is separated from the first showerhead by the second distance; , thereby depositing a third layer of material on the first substrate and depositing a fourth layer at a second station while the second pedestal is separated from the second showerhead by a second distance. A multi-station deposition apparatus comprising control logic for generating a plasma and thereby depositing a fourth layer of material on a second substrate.

本開示の内容が明確にそうではないと要求しない限り、本明細書および特許請求の範囲の全体を通して「ｃｏｍｐｒｉｓｅ（備える）」、「ｃｏｍｐｒｉｓｉｎｇ（備える）」などの用語は、排他的または網羅的な意味とは対照的に包括的意味で、すなわち「含むが限定しない」の意味で解釈されるべきである。単数または複数を使用する単語はまた、一般にそれぞれ複数または単数を含む。追加で、「本明細書で」、「本明細書の下で」、「上記の」、「以下の」という単語および類似の意味の単語は、全体として本出願を指し、本出願の任意の特定の層を指すものではない。２つ以上の品目からなるリストを参照して単語「ｏｒ（または）」を使用するとき、その単語は、単語についての以下の解釈、すなわち、リスト内の品目のいずれも、リスト内の品目のすべて、およびリスト内の品目の任意の組合せのうちすべてに及ぶ。用語「ｉｍｐｌｅｍｅｎｔａｔｉｏｎ（実装形態）」は、本明細書で記述する技法および方法の実装形態だけではなく、構造を具体化し、ならびに／または本明細書で記述する技法および／もしくは方法を組み入れる物理的対象物も指す。本明細書では、用語「実質的に」は、特に断りのない限り参照値の５％の範囲内を意味する。たとえば、実質的に垂直は、±５％の範囲内で平行であることを意味する。
本発明は、たとえば、以下のような態様で実現することもできる。
適用例１：
第１のステーションおよび第２のステーションを有するマルチステーション堆積装置で基板の上に材料を堆積させる方法であって、
前記第１のステーションの第１の台座の上に第１の基板を提供するステップと、
前記第２のステーションの第２の台座の上に第２の基板を提供するステップと、
堆積処理の第１の部分のために、同時に、
前記第１の台座が前記第１のステーションの第１のシャワーヘッドから第１の距離だけ分離されている間に前記第１のステーションで第１のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第１の層を堆積させ、
前記第２の台座が前記第２のステーションの第２のシャワーヘッドから前記第１の距離と異なる第２の距離だけ分離されている間に前記第２のステーションで第２のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第２の層を堆積させる
ステップと
を備える方法。
適用例２：
適用例１の方法であって、前記堆積処理の第２の部分のために、同時に、
前記第１の台座が前記第１のシャワーヘッドから前記第１の距離と異なる第３の距離だけ分離されている間に前記第１のステーションで第３のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第３の層を堆積させ、
前記第２の台座が前記第２のシャワーヘッドから前記第２の距離と異なる第４の距離だけ分離されている間に前記第２のステーションで第４のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第４の層を堆積させる
ステップをさらに備える方法。
適用例３：
適用例２の方法であって、前記第１の距離と前記第３の距離の差は、前記第２の距離と前記第４の距離の差と実質的同じである方法。
適用例４：
適用例１の方法であって、前記堆積処理の第２の層のために、同時に、
前記第１の台座が前記第１のシャワーヘッドから第３の距離だけ分離されている間に前記第１のステーションで第３のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第３の層を堆積させ、
前記第２の台座が前記第２のシャワーヘッドから前記第３の距離だけ分離されている間に前記第２のステーションで第４のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第４の層を堆積させる
ステップをさらに備える方法。
適用例５：
適用例１の方法であって、
前記第１の部分は、Ｎの堆積サイクルを含み、
前記Ｎの堆積サイクルの各々は、
同時に、前記第１の台座が前記第１の距離だけ分離されている間に前記第１のステーションで前記第１のプラズマを発生させ、それにより前記第１の基板の上に前記材料の前記第１の層を堆積させ、前記第２の台座が前記第２の距離だけ分離されている間に前記第２のステーションで前記第２のプラズマを発生させ、それにより前記第２の基板の上に前記材料の前記第２の層を堆積させるステップと、
前記第１のプラズマおよび前記第２のプラズマを点火し、消滅させるステップと
を含む方法。
適用例６：
適用例５の方法であって、
前記第１の部分の後の、Ｘの堆積サイクルを含む前記堆積処理の第２の部分のために、前記Ｘの堆積サイクルの各々で、同時に、
前記第１の台座が前記第１のシャワーヘッドから第３の距離だけ分離されている間に前記第１のステーションで第３のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第３の層を堆積させ、
前記第２の台座が前記第２のシャワーヘッドから前記第３の距離だけ分離されている間に前記第２のステーションで第４のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第４の層を堆積させるステップであって、前記Ｘの堆積サイクルの各々は、前記第３のプラズマおよび前記第４のプラズマを点火させ、消滅させるステップを含む
ステップをさらに備える方法。
適用例７：
適用例５の方法であって、
前記第１の部分の前の、Ｙの堆積サイクルを含む前記堆積処理の第２の部分のために、前記Ｙの堆積サイクルの各々で、同時に、
前記第１の台座が前記第１のシャワーヘッドから第３の距離だけ分離されている間に前記第１のステーションで第３のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第３の層を堆積させ、
前記第２の台座が前記第２のシャワーヘッドから前記第３の距離だけ分離されている間に前記第２のステーションで第４のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第４の層を堆積させるステップであって、前記Ｙの堆積サイクルの各々は、前記第３のプラズマおよび前記第４のプラズマを点火し、消滅させるステップを含む
ステップをさらに備える方法。
適用例８：
適用例５の方法であって、
前記第１の距離と第３の距離の間で前記第１の台座を調節するステップと、
前記第２の距離と第４の距離の間で前記第２の台座を調節するステップと、
Ｚの堆積サイクルを含む前記堆積処理の第２の部分のために、前記Ｚの堆積サイクルの各々で、同時に、
前記第１の台座が前記第１のシャワーヘッドから前記第３の距離だけ分離されている間に前記第１のステーションで第３のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第３の層を堆積させ、
前記第２の台座が前記第２のシャワーヘッドから前記第４の距離だけ分離されている間に前記第２のステーションで第４のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第４の層を堆積させるステップであって、前記Ｚの堆積サイクルの各々は、前記第３のプラズマおよび前記第４のプラズマを点火し、消滅させるステップを含む
ステップをさらに備える方法。
適用例９：
適用例５の方法であって、前記第１のステーションおよび前記第２のステーションでの各前記Ｎの堆積サイクルは、
（ｉ）膜前駆物質を、前記前駆物質が前記基板上で吸着制限層を形成するように、そのステーションで前記基板の上に吸着させるステップと、
（ｉｉ）吸着された前記前駆物質を取り囲む体積から少なくとも一部の吸着されなかった前記膜前駆物質を除去するステップと、
（ｉｉｉ）前記（ｉｉ）での前記吸着されなかった前駆物質を除去した後、そのステーションでプラズマを発生させることにより前記吸着された膜前駆物質を反応させて、そのステーションで前記基板上に前記材料の層を形成するステップと、
（ｉｖ）前記吸着された前駆物質を反応させた後に存在する場合に、脱着した前記膜前駆物質および／または反応副産物を、膜層を取り囲む前記体積から除去するステップと
を備える方法。
適用例１０：
適用例９の方法であって、
前記第１の距離から第３の距離に前記第１の台座を調節するステップと、
前記第２の距離から第４の距離に前記第２の台座を調節するステップと
をさらに備え、
各前記サイクルの前記（ｉｉｉ）のために、前記第１の台座は前記第１の距離にあり、前記第２の台座は前記第２の距離にあり、
各前記サイクルの前記（ｉ）、前記（ｉｉ）、または前記（ｉｖ）のうち１つまたは複数のために、前記第１の台座は前記第３の距離にあり、前記第２の台座は前記第４の距離にある方法。
適用例１１：
適用例１の方法であって、前記マルチステーション堆積装置の中の第３のステーションの第３の台座の上に第３の基板を提供するステップをさらに備え、
前記堆積処理の前記第１の部分は、同時に、前記第３の台座が前記第３のステーションの第３のシャワーヘッドから第３の距離だけ分離されている間に第３のステーションで第３のプラズマを発生させ、それにより第３の基板の上に前記材料の第３の層を堆積させるステップをさら備え、
前記第３の距離は、前記第１の距離および前記第２の距離と異なる方法。
適用例１２：
適用例１１の方法であって、
前記堆積処理の第２の部分のために、同時に、
前記第１の台座が前記第１のシャワーヘッドから第４の距離だけ分離されている間に前記第１のステーションで第４のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第４の層を堆積させ、
前記第２の台座が前記第２のシャワーヘッドから前記第４の距離だけ分離されている間に前記第２のステーションで第５のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第５の層を堆積させ、
前記第４のプラズマおよび前記第５のプラズマを同時に発生させている間に、かつ前記第３の台座が前記第３のシャワーヘッドから前記第４の距離だけ分離されている間に、前記第３のステーションで第６のプラズマを発生させ、それにより前記第３の基板の上に前記材料の第６の層を堆積させる
ステップ
をさらに備える方法。
適用例１３：
適用例１の方法であって、
前記第１のプラズマは、第１の値のプラズマ特性を有し、
前記第２のプラズマは、前記第１の値と異なる第２の値の前記プラズマ特性を有する方法。
適用例１４：
適用例１３の方法であって、前記プラズマ特性はプラズマ電力を備える方法。
適用例１５：
適用例１の方法であって、
前記第１の基板上の前記材料の前記第１の層は、第１の値の性質を有し、
前記第２の基板上の前記材料の前記第２の層は、前記第１の値と実質的に同じ第２の値の前記性質を有する方法。
適用例１６：
適用例１の方法であって、
前記第１の基板上の前記材料の前記第１の層は、第１の値の性質を有し、
前記第２の基板上の前記材料の前記第２の層は、前記第１の値と異なる第２の値の前記性質を有する方法。
適用例１７：
適用例１５の方法であって、前記性質は、ウェットエッチング速度、ドライエッチング速度、組成、厚さ、密度、架橋の量、化学的性質、反応完了、応力、屈折率、誘電率、硬度、エッチング選択性、安定性、および密封性からなるグループから選択される方法。
適用例１８：
適用例１の方法であって、
前記第１の基板上の前記材料の前記第１の層は、第１の値の性質を有し、
前記第２の基板上の前記材料の前記第２の層は、前記第１の値の前記性質を有する方法。
適用例１９：
適用例１の方法であって、
前記第１の基板および前記第２の基板を提供する前に、前記第１の台座の上に第３の基板を提供するステップと、
前記第１の基板および前記第２の基板を提供する前に、前記第２の台座の上に第４の基板を提供するステップと、
第２の堆積処理のために、同時に、
前記第１の台座が前記第１のシャワーヘッドから第３の距離だけ分離されている間に前記第１のステーションで第３のプラズマを発生させ、それにより前記第３の基板の上に前記材料の第３の層を堆積させ、
前記第２の台座が前記第２のシャワーヘッドから前記第１の距離だけ分離されている間に前記第２のステーションで第４のプラズマを発生させ、それにより前記第４の基板の上に前記材料の第４の層を堆積させるステップであって、前記第１の基板上の前記材料の前記第１の層の性質と前記第２の基板上の前記材料の前記第２の層の前記性質の間の第１の非均一性は、前記第３の基板上の前記材料の前記第３の層の前記性質と前記第４の基板上の前記材料の前記第４の層の前記性質の間の第２の非均一性よりも小さい
ステップと
をさらに備える方法。
適用例２０：
適用例１の方法であって、
前記第１の台座は、前記堆積処理の前記第１の部分の間、前記第１の基板にチャッキング力を加え、
前記第２の台座は、前記堆積処理の前記第１の部分の間、前記第２の基板にチャッキング力を加える方法。
適用例２１：
第１のステーションおよび第２のステーションを有するマルチステーション堆積装置で基板の上に材料を堆積させる方法であって、
前記第１のステーションの第１の台座の上に第１の基板を提供するステップと、
前記第２のステーションの第２の台座の上に第２の基板を提供するステップと、
堆積処理の第１の部分のために、同時に、
前記第１の台座が前記第１のステーションの第１のシャワーヘッドから第１の距離だけ分離されている間に前記第１のステーションで第１のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第１の層を堆積させ、
前記第２の台座が前記第２のステーションの第２のシャワーヘッドから前記第１の距離だけ分離されている間に前記第２のステーションで第２のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第２の層を堆積させるステップと、
前記第１の部分の後、前記第１の台座を第２の距離に、かつ前記第２の台座を前記第２の距離に調節するステップと、
前記堆積処理の第２の部分のために、同時に、
前記第１の台座が前記第２の距離だけ分離されている間に前記第１のステーションで第３のプラズマを発生させ、それにより前記第１の基板の上に前記材料の第３の層を堆積させ、
前記第２の台座が前記第２の距離だけ分離されている間に前記第２のステーションで第４のプラズマを発生させ、それにより前記第２の基板の上に前記材料の第４の層を堆積させる
ステップと
を備える方法。
適用例２２：
適用例２１の方法であって、
前記第１の基板上の前記材料の前記第１の層は、第１の値の性質を有し、
前記第２の基板上の前記材料の前記第２の層は、第２の値の前記性質を有し、
前記第１の基板上の前記材料の前記第３の層は、前記第１の値と異なる第３の値の前記性質を有し、
前記第２の基板上の前記材料の前記第２の層は、前記第２の値と異なる第４の値の前記性質を有する方法。
適用例２３：
適用例２１の方法であって、前記第１の距離は、前記第２の距離よりも長い方法。 Unless the content of this disclosure clearly requires otherwise, the terms "comprise,""comprising," and the like throughout the specification and claims do not refer to an exclusive or exhaustive should be interpreted in an inclusive sense, ie, in the sense of "including but not limited to" as opposed to meaning. Words using the singular or plural number generally also include the plural or singular number respectively. Additionally, the words “herein,” “below here,” “above,” “below,” and words of similar import refer to this application as a whole and to any It does not refer to a specific layer. When using the word "or" with reference to a list of two or more items, the word is subject to the following interpretation of the word: Covers all and any combination of items in the list. The term "implementation" refers not only to an implementation of the techniques and methods described herein, but also to any physical object that embodies the structure and/or incorporates the techniques and/or methods described herein. Point to things. As used herein, the term "substantially" means within 5% of the reference value unless otherwise specified. For example, substantially perpendicular means parallel within ±5%.
The present invention can also be implemented in the following aspects, for example.
Application example 1:
A method of depositing material on a substrate in a multi-station deposition apparatus having a first station and a second station, comprising:
providing a first substrate on a first pedestal of the first station;
providing a second substrate on a second pedestal of the second station;
For the first part of the deposition process, simultaneously
generating a first plasma at the first station while the first pedestal is separated from a first showerhead at the first station by a first distance, thereby removing the first substrate; depositing a first layer of said material on the
generating a second plasma at the second station while the second pedestal is separated from a second showerhead at the second station by a second distance different from the first distance; thereby depositing a second layer of said material on said second substrate
step and
How to prepare.
Application example 2:
The method of Application 1, wherein for the second part of the deposition process simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance different from the first distance, thereby depositing a third layer of said material on a substrate of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by a fourth distance different from the second distance, thereby generating the second plasma; depositing a fourth layer of said material on the substrate of
The method further comprising steps.
Application example 3:
The method of Application 2, wherein the difference between the first distance and the third distance is substantially the same as the difference between the second distance and the fourth distance.
Application example 4:
The method of Application 1, wherein for the second layer of said deposition process, simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the first substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the third distance, thereby forming the plasma on the second substrate; deposit a fourth layer of material
The method further comprising steps.
Application example 5:
The method of Application Example 1,
the first portion includes N deposition cycles;
each of the N deposition cycles comprising:
At the same time, the first plasma is generated at the first station while the first pedestals are separated by the first distance, thereby depositing the first plasma of the material on the first substrate. depositing a layer and generating said second plasma at said second station while said second pedestal is separated by said second distance, thereby overlying said second substrate; depositing said second layer of said material;
igniting and extinguishing the first plasma and the second plasma;
method including.
Application example 6:
The method of Application Example 5,
for a second portion of the deposition process comprising X deposition cycles after the first portion, in each of the X deposition cycles, simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the first substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the third distance, thereby forming the plasma on the second substrate; depositing a fourth layer of material, each of the X deposition cycles including igniting and extinguishing the third plasma and the fourth plasma;
The method further comprising steps.
Application example 7:
The method of Application Example 5,
for a second portion of the deposition process comprising Y deposition cycles prior to the first portion, in each of the Y deposition cycles, simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the first substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the third distance, thereby forming the plasma on the second substrate; depositing a fourth layer of material, wherein each of said Y deposition cycles includes igniting and extinguishing said third plasma and said fourth plasma;
The method further comprising steps.
Application example 8:
The method of Application Example 5,
adjusting the first pedestal between the first distance and a third distance;
adjusting the second pedestal between the second distance and a fourth distance;
for a second portion of the deposition process comprising Z deposition cycles, in each of the Z deposition cycles simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by the third distance, thereby forming the plasma on the first substrate; depositing a third layer of material;
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the fourth distance, thereby forming the plasma on the second substrate; depositing a fourth layer of material, wherein each of said Z deposition cycles includes igniting and extinguishing said third plasma and said fourth plasma;
The method further comprising steps.
Application example 9:
The method of Application 5, wherein each of said N deposition cycles at said first station and said second station comprises:
(i) adsorbing a film precursor onto the substrate at the station such that the precursor forms an adsorption limiting layer on the substrate;
(ii) removing at least a portion of the unadsorbed film precursor from a volume surrounding the adsorbed precursor;
(iii) after removing the unadsorbed precursors in (ii) above, reacting the adsorbed film precursors by generating a plasma at the station to deposit the film precursors on the substrate at the station; forming a layer of material;
(iv) removing the desorbed membrane precursor and/or reaction by-products, if present after reacting the adsorbed precursor, from the volume surrounding the membrane layer;
How to prepare.
Application example 10:
The method of Application Example 9,
adjusting the first pedestal from the first distance to a third distance;
adjusting the second pedestal from the second distance to a fourth distance;
further comprising
for said (iii) of each said cycle said first pedestal is at said first distance and said second pedestal is at said second distance;
For one or more of said (i), said (ii), or said (iv) of each said cycle, said first pedestal is at said third distance and said second pedestal is said A method at a fourth distance.
Application example 11:
The method of Application 1, further comprising providing a third substrate on a third pedestal of a third station in the multi-station deposition apparatus;
The first portion of the deposition process concurrently includes a third showerhead at a third station while the third pedestal is separated from a third showerhead at the third station by a third distance. further comprising generating a plasma thereby depositing a third layer of said material on a third substrate;
A method in which the third distance is different than the first distance and the second distance.
Application example 12:
The method of Application Example 11, comprising:
simultaneously for the second part of the deposition process,
generating a fourth plasma at the first station while the first pedestal is separated from the first showerhead by a fourth distance, thereby depositing the material on the first substrate; depositing a fourth layer of
generating a fifth plasma at the second station while the second pedestal is separated from the second showerhead by the fourth distance, thereby forming the plasma on the second substrate; depositing a fifth layer of material;
while simultaneously generating the fourth plasma and the fifth plasma and while the third pedestal is separated from the third showerhead by the fourth distance; generating a sixth plasma at the station of thereby depositing a sixth layer of said material on said third substrate;
step
how to further provide
Application example 13:
The method of Application Example 1,
the first plasma has a plasma property of a first value;
The method, wherein the second plasma has the plasma characteristic of a second value different from the first value.
Application example 14:
14. The method of Application 13, wherein the plasma property comprises plasma power.
Application example 15:
The method of Application Example 1,
said first layer of said material on said first substrate having a property of a first value;
The method wherein said second layer of said material on said second substrate has said property of a second value substantially the same as said first value.
Application example 16:
The method of Application Example 1,
said first layer of said material on said first substrate having a property of a first value;
A method wherein said second layer of said material on said second substrate has said property of a second value different from said first value.
Application example 17:
The method of Application 15, wherein the properties are wet etch rate, dry etch rate, composition, thickness, density, amount of cross-linking, chemical properties, reaction completion, stress, refractive index, dielectric constant, hardness, etching A method selected from the group consisting of selectivity, stability, and hermeticity.
Application example 18:
The method of Application Example 1,
said first layer of said material on said first substrate having a property of a first value;
The method wherein said second layer of said material on said second substrate has said property of said first value.
Application example 19:
The method of Application Example 1,
providing a third substrate on the first pedestal before providing the first substrate and the second substrate;
providing a fourth substrate on the second pedestal before providing the first substrate and the second substrate;
For the second deposition process, at the same time
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the third substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the first distance, thereby forming the plasma on the fourth substrate; depositing a fourth layer of material, the properties of the first layer of the material on the first substrate and the properties of the second layer of the material on the second substrate; a first non-uniformity between said property of said third layer of said material on said third substrate and said property of said fourth layer of said material on said fourth substrate; less than the second non-uniformity of
step and
how to further provide
Application example 20:
The method of Application Example 1,
the first pedestal applies a chucking force to the first substrate during the first portion of the deposition process;
The method wherein the second pedestal applies a chucking force to the second substrate during the first portion of the deposition process.
Application example 21:
A method of depositing material on a substrate in a multi-station deposition apparatus having a first station and a second station, comprising:
providing a first substrate on a first pedestal of the first station;
providing a second substrate on a second pedestal of the second station;
For the first part of the deposition process, simultaneously
generating a first plasma at the first station while the first pedestal is separated from a first showerhead at the first station by a first distance, thereby removing the first substrate; depositing a first layer of said material on the
generating a second plasma at the second station while the second pedestal is separated from the second showerhead at the second station by the first distance, thereby generating the second plasma; depositing a second layer of said material on a substrate;
adjusting the first pedestal to a second distance and the second pedestal to the second distance after the first portion;
simultaneously for the second part of the deposition process,
generating a third plasma at the first station while the first pedestals are separated by the second distance, thereby forming a third layer of the material on the first substrate; deposit,
generating a fourth plasma at the second station while the second pedestals are separated by the second distance, thereby forming a fourth layer of the material on the second substrate; deposit
step and
How to prepare.
Application example 22:
The method of Application Example 21, comprising:
said first layer of said material on said first substrate having a property of a first value;
said second layer of said material on said second substrate having said property of a second value;
said third layer of said material on said first substrate having said property at a third value different from said first value;
The method wherein said second layer of said material on said second substrate has said property at a fourth value different from said second value.
Application example 23:
22. The method of Application 21, wherein the first distance is longer than the second distance.

Claims

A method of depositing material on a substrate in a multi-station deposition apparatus having a first station and a second station, comprising:
providing a first substrate on a first pedestal of the first station;
providing a second substrate on a second pedestal of the second station;
For the first part of the deposition process, simultaneously
generating a first plasma at the first station while the first pedestal is separated from a first showerhead at the first station by a first distance, thereby removing the first substrate; depositing a first layer of said material on the
generating a second plasma at the second station while the second pedestal is separated from a second showerhead at the second station by a second distance different from the first distance; and thereby depositing a second layer of said material on said second substrate.

2. The method of claim 1, wherein for the second part of the deposition process simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance different from the first distance, thereby depositing a third layer of said material on a substrate of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by a fourth distance different from the second distance, thereby generating the second plasma; depositing a fourth layer of said material on a substrate of .

3. The method of claim 2, wherein the difference between said first distance and said third distance is substantially the same as the difference between said second distance and said fourth distance.

2. The method of claim 1, wherein for the second layer of the deposition process simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the first substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the third distance, thereby forming the plasma on the second substrate; The method further comprising depositing a fourth layer of material.

2. The method of claim 1, wherein
the first portion includes N deposition cycles;
each of the N deposition cycles comprising:
At the same time, the first plasma is generated at the first station while the first pedestals are separated by the first distance, thereby depositing the first plasma of the material on the first substrate. depositing a layer and generating said second plasma at said second station while said second pedestal is separated by said second distance, thereby overlying said second substrate; depositing said second layer of said material;
igniting and extinguishing said first plasma and said second plasma.

6. The method of claim 5, wherein
for a second portion of the deposition process comprising X deposition cycles after the first portion, in each of the X deposition cycles, simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the first substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the third distance, thereby forming the plasma on the second substrate; depositing a fourth layer of material, wherein each of said X deposition cycles includes igniting and extinguishing said third plasma and said fourth plasma.

6. The method of claim 5, wherein
for a second portion of the deposition process comprising Y deposition cycles prior to the first portion, in each of the Y deposition cycles, simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the first substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the third distance, thereby forming the plasma on the second substrate; depositing a fourth layer of material, wherein each of said Y deposition cycles includes igniting and extinguishing said third plasma and said fourth plasma.

6. The method of claim 5, wherein
adjusting the first pedestal between the first distance and a third distance;
adjusting the second pedestal between the second distance and a fourth distance;
for a second portion of the deposition process comprising Z deposition cycles, in each of the Z deposition cycles simultaneously:
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by the third distance, thereby forming the plasma on the first substrate; depositing a third layer of material;
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the fourth distance, thereby forming the plasma on the second substrate; depositing a fourth layer of material, wherein each of said Z deposition cycles includes igniting and extinguishing said third plasma and said fourth plasma.

6. The method of claim 5, wherein each of the N deposition cycles at the first station and the second station comprises:
(i) adsorbing a film precursor onto the substrate at the station such that the precursor forms an adsorption limiting layer on the substrate;
(ii) removing at least a portion of the unadsorbed film precursor from a volume surrounding the adsorbed precursor;
(iii) after removing the unadsorbed precursors in (ii) above, reacting the adsorbed film precursors by generating a plasma at the station to deposit the film precursors on the substrate at the station; forming a layer of material;
(iv) removing the desorbed membrane precursor and/or reaction by-products, if present after reacting the adsorbed precursor, from the volume surrounding the membrane layer.

10. The method of claim 9, wherein
adjusting the first pedestal from the first distance to a third distance;
adjusting the second pedestal from the second distance to a fourth distance;
for said (iii) of each said cycle said first pedestal is at said first distance and said second pedestal is at said second distance;
For one or more of said (i), said (ii), or said (iv) of each said cycle, said first pedestal is at said third distance and said second pedestal is said A method at a fourth distance.

2. The method of claim 1, further comprising providing a third substrate on a third pedestal of a third station in the multi-station deposition apparatus;
The first portion of the deposition process concurrently includes a third showerhead at a third station while the third pedestal is separated from a third showerhead at the third station by a third distance. further comprising generating a plasma thereby depositing a third layer of said material on a third substrate;
A method in which the third distance is different than the first distance and the second distance.

12. The method of claim 11, wherein
simultaneously for the second part of the deposition process,
generating a fourth plasma at the first station while the first pedestal is separated from the first showerhead by a fourth distance, thereby depositing the material on the first substrate; depositing a fourth layer of
generating a fifth plasma at the second station while the second pedestal is separated from the second showerhead by the fourth distance, thereby forming the plasma on the second substrate; depositing a fifth layer of material;
while simultaneously generating the fourth plasma and the fifth plasma and while the third pedestal is separated from the third showerhead by the fourth distance; generating a sixth plasma at the station of , thereby depositing a sixth layer of said material on said third substrate.

2. The method of claim 1, wherein
the first plasma has a plasma property of a first value;
The method, wherein the second plasma has the plasma characteristic of a second value different from the first value.

14. The method of claim 13, wherein the plasma property comprises plasma power.

2. The method of claim 1, wherein
said first layer of said material on said first substrate having a property of a first value;
The method wherein said second layer of said material on said second substrate has said property of a second value substantially the same as said first value.

2. The method of claim 1, wherein
said first layer of said material on said first substrate having a property of a first value;
A method wherein said second layer of said material on said second substrate has said property of a second value different from said first value.

16. The method of claim 15, wherein the properties are wet etch rate, dry etch rate, composition, thickness, density, amount of cross-linking, chemical properties, reaction completion, stress, refractive index, dielectric constant, hardness. , etch selectivity, stability, and hermeticity.

2. The method of claim 1, wherein
said first layer of said material on said first substrate having a property of a first value;
The method wherein said second layer of said material on said second substrate has said property of said first value.

2. The method of claim 1, wherein
providing a third substrate on the first pedestal before providing the first substrate and the second substrate;
providing a fourth substrate on the second pedestal before providing the first substrate and the second substrate;
For the second deposition process, at the same time
generating a third plasma at the first station while the first pedestal is separated from the first showerhead by a third distance, thereby depositing the material on the third substrate; depositing a third layer of
generating a fourth plasma at the second station while the second pedestal is separated from the second showerhead by the first distance, thereby forming the plasma on the fourth substrate; depositing a fourth layer of material, the properties of the first layer of the material on the first substrate and the properties of the second layer of the material on the second substrate; a first non-uniformity between said property of said third layer of said material on said third substrate and said property of said fourth layer of said material on said fourth substrate; The method further comprising step less than the second non-uniformity of and .

2. The method of claim 1, wherein
the first pedestal applies a chucking force to the first substrate during the first portion of the deposition process;
The method wherein the second pedestal applies a chucking force to the second substrate during the first portion of the deposition process.

A method of depositing material on a substrate in a multi-station deposition apparatus having a first station and a second station, comprising:
providing a first substrate on a first pedestal of the first station;
providing a second substrate on a second pedestal of the second station;
For the first part of the deposition process, simultaneously
generating a first plasma at the first station while the first pedestal is separated from a first showerhead at the first station by a first distance, thereby removing the first substrate; depositing a first layer of said material on the
generating a second plasma at the second station while the second pedestal is separated from the second showerhead at the second station by the first distance, thereby generating the second plasma; depositing a second layer of said material on a substrate;
adjusting the first pedestal to a second distance and the second pedestal to the second distance after the first portion;
simultaneously for the second part of the deposition process,
generating a third plasma at the first station while the first pedestals are separated by the second distance, thereby forming a third layer of the material on the first substrate; deposit,
generating a fourth plasma at the second station while the second pedestals are separated by the second distance, thereby forming a fourth layer of the material on the second substrate; A method comprising the step of depositing;

22. The method of claim 21, wherein
said first layer of said material on said first substrate having a property of a first value;
said second layer of said material on said second substrate having said property of a second value;
said third layer of said material on said first substrate having said property at a third value different from said first value;
The method wherein said fourth layer of said material on said second substrate has said property at a fourth value different from said second value.

22. The method of claim 21, wherein said first distance is longer than said second distance.