JPWO2020123063A5 - - Google Patents
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- Publication number
- JPWO2020123063A5 JPWO2020123063A5 JP2021529313A JP2021529313A JPWO2020123063A5 JP WO2020123063 A5 JPWO2020123063 A5 JP WO2020123063A5 JP 2021529313 A JP2021529313 A JP 2021529313A JP 2021529313 A JP2021529313 A JP 2021529313A JP WO2020123063 A5 JPWO2020123063 A5 JP WO2020123063A5
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- ion beam
- scanner
- correction device
- implantation system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000010884 ion-beam technique Methods 0.000 claims description 126
- 230000004907 flux Effects 0.000 claims description 89
- 238000012937 correction Methods 0.000 claims description 71
- 238000005468 ion implantation Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 8
- 238000004980 dosimetry Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000007943 implant Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/218,884 US10553392B1 (en) | 2018-12-13 | 2018-12-13 | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
| US16/218,884 | 2018-12-13 | ||
| PCT/US2019/060084 WO2020123063A1 (en) | 2018-12-13 | 2019-11-06 | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022512302A JP2022512302A (ja) | 2022-02-03 |
| JPWO2020123063A5 true JPWO2020123063A5 (ko) | 2023-10-26 |
| JP7474255B2 JP7474255B2 (ja) | 2024-04-24 |
Family
ID=69160019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021529313A Active JP7474255B2 (ja) | 2018-12-13 | 2019-11-06 | イオン注入システムおよび方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10553392B1 (ko) |
| JP (1) | JP7474255B2 (ko) |
| KR (1) | KR20210099036A (ko) |
| CN (1) | CN113169011A (ko) |
| TW (1) | TWI827743B (ko) |
| WO (1) | WO2020123063A1 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170005013A1 (en) * | 2015-06-30 | 2017-01-05 | Varian Semiconductor Equipment Associates, Inc. | Workpiece Processing Technique |
| US10553392B1 (en) * | 2018-12-13 | 2020-02-04 | Axcelis Technologies, Inc. | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
| US11217427B1 (en) * | 2020-11-27 | 2022-01-04 | Applied Materials, Inc. | System, apparatus and method for bunched ribbon ion beam |
| US11560995B1 (en) | 2021-07-28 | 2023-01-24 | Hyundai Mobis Co., Ltd. | Lamp for vehicle and vehicle including the same |
| CN117476431B (zh) * | 2023-12-28 | 2024-04-12 | 杭州泽天春来科技股份有限公司 | 四极杆射频电源扫描控制方法、系统及可读存储介质 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922106A (en) | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
| US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
| JP3567749B2 (ja) | 1998-07-22 | 2004-09-22 | 日新電機株式会社 | 荷電粒子ビームの分布測定方法およびそれに関連する方法 |
| US7550751B2 (en) * | 2006-04-10 | 2009-06-23 | Axcelis Technologies, Inc. | Ion beam scanning control methods and systems for ion implantation uniformity |
| US7615763B2 (en) * | 2006-09-19 | 2009-11-10 | Axcelis Technologies, Inc. | System for magnetic scanning and correction of an ion beam |
| WO2009045722A1 (en) * | 2007-09-28 | 2009-04-09 | Varian Semiconductor Equipment Associates, Inc. | Two-diemensional uniformity correction for ion beam assisted etching |
| US8138484B2 (en) | 2010-04-28 | 2012-03-20 | Axcelis Technologies Inc. | Magnetic scanning system with improved efficiency |
| US20110272567A1 (en) * | 2010-05-05 | 2011-11-10 | Axcelis Technologies, Inc. | Throughput Enhancement for Scanned Beam Ion Implanters |
| US8637838B2 (en) * | 2011-12-13 | 2014-01-28 | Axcelis Technologies, Inc. | System and method for ion implantation with improved productivity and uniformity |
| CN102779711B (zh) * | 2012-08-01 | 2014-11-05 | 西安工业大学 | 具有超大离子束发散角的离子源 |
| US9029811B1 (en) | 2013-10-22 | 2015-05-12 | Varian Semiconductor Equipment Associates, Inc. | Apparatus to control an ion beam |
| US9520204B2 (en) | 2013-12-26 | 2016-12-13 | Varian Semiconductor Equipment Associates, Inc. | Cold stripper for high energy ion implanter with tandem accelerator |
| JP6195538B2 (ja) * | 2014-04-25 | 2017-09-13 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法及びイオン注入装置 |
| TW201635326A (zh) | 2014-12-26 | 2016-10-01 | 艾克塞利斯科技公司 | 在具有射束減速的離子植入器中用於射束角度調整的系統及方法 |
| US9679739B2 (en) | 2014-12-26 | 2017-06-13 | Axcelis Technologies, Inc. | Combined electrostatic lens system for ion implantation |
| US9738968B2 (en) | 2015-04-23 | 2017-08-22 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controlling implant process |
| US9728371B2 (en) | 2015-05-27 | 2017-08-08 | Nissin Ion Equipment Co., Ltd. | Ion beam scanner for an ion implanter |
| JP6517163B2 (ja) * | 2016-03-18 | 2019-05-22 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びスキャン波形作成方法 |
| US10553392B1 (en) * | 2018-12-13 | 2020-02-04 | Axcelis Technologies, Inc. | Scan and corrector magnet designs for high throughput scanned beam ion implanter |
-
2018
- 2018-12-13 US US16/218,884 patent/US10553392B1/en active Active
-
2019
- 2019-11-06 KR KR1020217019690A patent/KR20210099036A/ko unknown
- 2019-11-06 WO PCT/US2019/060084 patent/WO2020123063A1/en active Application Filing
- 2019-11-06 CN CN201980078886.2A patent/CN113169011A/zh active Pending
- 2019-11-06 JP JP2021529313A patent/JP7474255B2/ja active Active
- 2019-11-28 TW TW108143394A patent/TWI827743B/zh active
- 2019-12-19 US US16/720,499 patent/US11037754B2/en active Active
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