JPWO2020094642A5

JPWO2020094642A5 -

Info

Publication number: JPWO2020094642A5
Application number: JP2021523739A
Authority: JP
Publication date: 2022-08-23
Anticipated expiration: 2039-11-05

Claims

a source of nickel ions;
a source of molybdenum ions;
a tungsten ion source;
a source of hypophosphite ions,
- at least one complexing agent
wherein said solution does not contain any reducing agent containing boron, said solution further comprising:
- at least one organic sulfur-containing compound with a concentration of 0.38 to 38.00 μmol/L; and - at least one amino acid with a concentration of 0.67 to 40.13 mmol/L. solution.

The plating solution of claim 1, wherein the amino acid:organic sulfur-containing compound molar ratio is from 282:1 to 14,079:1.

3. The plating solution according to claim 1, wherein the concentration of hypophosphite ions is 0.09-0.27 mol/L.

The plating solution according to any one of claims 1 to 3, wherein the concentration of nickel ions is 0.067-0.133 mol/L.

A plating solution according to any one of claims 1 to 4, wherein the concentration of molybdenum ions is between 1.05 and 4.18 mmol/L.

The plating solution according to any one of claims 1 to 5, wherein the concentration of tungsten ions is 12.1-109.2 mmol/L.

7. The plating solution of any one of claims 1 to 6, wherein said amino acid is a sulfur-free amino acid, preferably said amino acid is selected from the group consisting of glycine, alanine, valine, leucine and isoleucine.

The organic sulfur-containing compound is N,N-dimethyl-dithiocarbamylpropylsulfonic acid, 3-mercaptopropanesulfonic acid, 3,3-dithiobis-1-propanesulfonic acid, 3-(2-benzothiazolylmercapto) Propanesulfonic acid, 3-[(ethoxy-thioxomethyl)thio]-1-propanesulfonic acid, 3-S-isothiuronium propanesulfonate, sodium diethyldithiocarbamate, thiodiacetic acid, dithiodiacetic acid, thiodiglycolic acid, dithio 8. The plating solution of any one of claims 1-7, selected from the group consisting of diglycolic acid, thiosulfate, thiourea, thiocyanate, cysteine and cystine.

9. The plating solution of any one of claims 1-8, wherein the complexing agent is selected from the group consisting of citric acid, isocitric acid, EDTA, EDTMP, HDEP and pyrophosphate.

A method for electrolessly plating a nickel alloy layer (5) on a substrate (2), in particular a wafer (3), said substrate being coated with an electroless nickel plating solution according to any one of claims 1 to 9. The method, comprising contacting with.

11. A method according to claim 10, wherein said substrate comprises a copper layer (4) or an aluminum layer, wherein said nickel alloy layer (5) is plated on the copper layer (4) or aluminum layer.

81.5-98.4% by weight nickel 1-10% by weight molybdenum 0.1-4% by weight tungsten 0.5-4.5 % by weight phosphorus A quaternary nickel alloy layer obtained from the electroless nickel plating solution according to any one of the preceding paragraphs, having a normal stress in the range of −40 to +120 N/mm ² , wherein the normal stress is Bent strip method according to ASTM standard B975: Copper-iron alloy PN: Said quaternary nickel alloy layer deposited on 1194 stress strip and subsequently measured according to stress measurement by using a deposit stress analyzer .

An article (1), in particular a semiconductor chip or wafer , comprising a nickel alloy layer (5), said nickel alloy layer being a nickel alloy layer according to claim 12 or nickel obtained by a method according to claim 10 or 11. The article (1), which is an alloy layer.

14. The article according to claim 13 , wherein the article comprises a laminate of a copper or aluminum layer followed by said nickel alloy layer and a palladium and/or gold layer in that order, said palladium layer being preferably an outer layer. goods.

Any of claims 1 to 9 for producing a barrier layer with a quaternary nickel alloy layer according to claim 12 between two metal layers, in particular a copper or aluminum layer and a palladium or gold layer. or use of the electroless nickel plating solution according to claim 1.