JPWO2020071339A1 - Substrate manufacturing method, composition and polymer - Google Patents

Substrate manufacturing method, composition and polymer Download PDF

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JPWO2020071339A1
JPWO2020071339A1 JP2020550435A JP2020550435A JPWO2020071339A1 JP WO2020071339 A1 JPWO2020071339 A1 JP WO2020071339A1 JP 2020550435 A JP2020550435 A JP 2020550435A JP 2020550435 A JP2020550435 A JP 2020550435A JP WO2020071339 A1 JPWO2020071339 A1 JP WO2020071339A1
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metal
polymer
terminal structure
substrate
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JP7184092B2 (en
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裕之 小松
裕之 小松
美樹 玉田
美樹 玉田
涼 久米川
涼 久米川
酒井 達也
達也 酒井
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JSR Corp
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    • C09D125/00Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/02Homopolymers or copolymers of hydrocarbons
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    • BPERFORMING OPERATIONS; TRANSPORTING
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    • B05D1/005Spin coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
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    • C08F297/00Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
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    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract

金属基板の表面に金属含有層を有する基板を簡便に製造することができる基板の製造方法、組成物及び重合体の提供を目的とする。本発明は、金属基板上に組成物を塗工する工程と、上記塗工工程により形成された塗工膜上の少なくとも一部に金属含有層を形成する工程とを備える基板の製造方法であって、上記組成物が溶媒と同一分子上に第1末端構造及び第2末端構造を有する重合体とを含有し、上記第1末端構造及び第2末端構造がそれぞれ下記式(1)で表される構造及び下記式(2)で表される構造からなる群より選ばれる少なくとも1種であることを特徴とする。下記式(1)中、A1は、金属原子と化学結合可能な官能基を含む1価の基である。下記式(2)中、L2は、−S−、−NR−又は−NA22−である。A2及びA22は、金属原子と化学結合可能な官能基を含む1価の基である。【選択図】なしAn object of the present invention is to provide a method for producing a substrate, a composition, and a polymer capable of easily producing a substrate having a metal-containing layer on the surface of the metal substrate. The present invention is a method for manufacturing a substrate including a step of coating a composition on a metal substrate and a step of forming a metal-containing layer on at least a part of the coating film formed by the coating step. The composition contains a polymer having a first-terminal structure and a second-terminal structure on the same molecule as the solvent, and the first-terminal structure and the second-terminal structure are represented by the following formulas (1), respectively. It is characterized in that it is at least one selected from the group consisting of the above-mentioned structure and the structure represented by the following formula (2). In the following formula (1), A1 is a monovalent group containing a functional group capable of chemically bonding with a metal atom. In the following formula (2), L2 is -S-, -NR- or -NA22-. A2 and A22 are monovalent groups containing a functional group capable of chemically bonding with a metal atom. [Selection diagram] None

Description

本発明は、基板の製造方法、組成物及び重合体に関する。 The present invention relates to a method for producing a substrate, a composition and a polymer.

半導体装置の製造の際等に、金属基板の表面に種々の層を形成することが行われている。このような層を形成する方法として、例えば微細な領域を表層に有する基板を選択的に修飾する方法が検討されるようになってきている。この修飾方法には、簡便に表面領域を修飾することができる材料が必要であり、種々のものが検討されている(特開2016−25315号公報、特開2003−76036号公報、ACS Nano,9,9,8710,2015、ACS Nano,9,9,8651,2015、Science,318,426,2007及びLangmuir,21,8234,2005参照)。 When manufacturing a semiconductor device or the like, various layers are formed on the surface of a metal substrate. As a method for forming such a layer, for example, a method for selectively modifying a substrate having a fine region on the surface layer has been studied. This modification method requires a material capable of easily modifying the surface region, and various methods have been studied (Japanese Patent Laid-Open No. 2016-25315, JP-A-2003-76036, ACS Nano, JP. See 9, 9, 8710, 2015, ACS Nano, 9, 9, 8651, 2015, Science, 318, 426, 2007 and Langmuir, 21, 8234, 2005).

特開2016−25315号公報Japanese Unexamined Patent Publication No. 2016-25315 特開2003−76036号公報Japanese Unexamined Patent Publication No. 2003-76036

ACS Nano,9,9,8710,2015ACS Nano, 9, 9, 8710, 2015 ACS Nano,9,9,8651,2015ACS Nano, 9, 9, 8651, 2015 Science,318,426,2007Science, 318, 426, 2007 Langmuir,21,8234,2005Langmuir, 21, 8234, 2005

最近では、金属基板の表面に形成する層として、金属原子を含む金属含有層を形成することが求められている。しかし、上記従来の材料では、金属含有層の形成に用いることは難しく、金属含有層を容易に形成させることができる方法が求められている。 Recently, it has been required to form a metal-containing layer containing a metal atom as a layer to be formed on the surface of a metal substrate. However, with the above-mentioned conventional materials, it is difficult to use for forming a metal-containing layer, and a method capable of easily forming a metal-containing layer is required.

本発明は、以上のような事情に基づいてなされたものであり、その目的は、金属基板の表面に金属含有層が形成された基板を簡便に製造することができる基板の製造方法、組成物及び重合体を提供することにある。 The present invention has been made based on the above circumstances, and an object of the present invention is a method and composition for producing a substrate capable of easily producing a substrate having a metal-containing layer formed on the surface of the metal substrate. And to provide a polymer.

上記課題を解決するためになされた発明は、金属基板の少なくとも一方の表面に組成物を塗工する工程と、上記塗工工程により形成された塗工膜の上記金属基板とは反対側の表面の少なくとも一部に金属含有層を形成する工程とを備える基板の製造方法であって、上記組成物が、同一分子上に第1末端構造及び第2末端構造を有する重合体と溶媒とを含有し、上記第1末端構造及び第2末端構造が、下記式(1)で表される構造及び下記式(2)で表される構造からなる群より選ばれる少なくとも1種であることを特徴とする。

Figure 2020071339
(式(1)中、Lは、炭素数1〜20の3価の基である。Aは、金属原子と化学結合可能な官能基を含む1価の基である。Xは、水素原子、炭素数1〜20の1価の有機基、−SH又は−S−A11である。A11は、金属原子と化学結合可能な官能基を含む1価の基である。nは、(−L(−A)−)で表されるブロックを構成する構造単位の数を示し、2以上の整数である。複数のAは同一でも異なっていてもよく、A及びA11は、同一でも異なっていてもよい。*は、上記重合体における上記式(1)で表される構造以外の部分に結合する部位を示す。
式(2)中、Lは、−S−、−NR−又は−NA22−である。A及びA22は、それぞれ独立して、金属原子と化学結合可能な官能基を含む1価の基である。Rは、水素原子又は炭素数1〜20の1価の炭化水素基である。mは、0又は1である。*は、上記重合体における上記式(2)で表される構造以外の部分に結合する部位を示す。)The invention made to solve the above problems is a step of coating a composition on at least one surface of a metal substrate and a surface of a coating film formed by the coating step on the opposite side of the metal substrate. A method for producing a substrate comprising a step of forming a metal-containing layer in at least a part of the above, wherein the composition contains a polymer having a first-terminal structure and a second-terminal structure on the same molecule and a solvent. The first terminal structure and the second terminal structure are at least one selected from the group consisting of the structure represented by the following formula (1) and the structure represented by the following formula (2). do.
Figure 2020071339
(In the formula (1), L 1 is a trivalent group having 1 to 20 carbon atoms. A 1 is a monovalent group containing a functional group that can be chemically bonded to a metal atom. X is hydrogen. atom, a monovalent organic group having 1 to 20 carbon atoms, .A 11 is -SH or -S-a 11 is a monovalent group containing a metal atom capable of chemically bonding functional groups .n is (-L 1 (-A 1 )-) Indicates the number of structural units constituting the block represented by n , which is an integer of 2 or more. A plurality of A 1s may be the same or different, and A 1 and A 11 may be the same or different. * Indicates a site of the polymer that binds to a portion other than the structure represented by the above formula (1).
Wherein (2), L 2 is, -S -, - NR- or -NA 22 - a. A 2 and A 22 are monovalent groups each independently containing a functional group capable of chemically bonding with a metal atom. R is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. m is 0 or 1. * Indicates a site that binds to a portion of the polymer other than the structure represented by the above formula (2). )

上記課題を解決するためになされた別の発明は、金属基板とこの金属基板の少なくとも一方の面側に形成された金属含有層とを備える基板の製造方法に用いられる組成物であって、同一分子上に第1末端構造及び第2末端構造を有する重合体と溶媒とを含有し、上記第1末端構造及び第2末端構造が、上記式(1)で表される構造及び上記式(2)で表される構造からなる群より選ばれる少なくとも1種であることを特徴とする。 Another invention made to solve the above problems is a composition used in a method for producing a substrate including a metal substrate and a metal-containing layer formed on at least one surface side of the metal substrate, which are the same. A polymer having a first-terminal structure and a second-terminal structure and a solvent are contained on the molecule, and the first-terminal structure and the second-terminal structure are the structure represented by the above formula (1) and the above formula (2). ) Is at least one selected from the group consisting of the structures represented by).

上記課題を解決するためになされたさらに別の発明は、同一分子上に第1末端構造及び第2末端構造を有し、上記第1末端構造及び第2末端構造が上記式(1)で表される構造及び上記式(2)で表される構造からなる群より選ばれる少なくとも1種である重合体である。 Yet another invention made to solve the above problem has a first terminal structure and a second terminal structure on the same molecule, and the first terminal structure and the second terminal structure are represented by the above formula (1). It is a polymer which is at least one selected from the group consisting of the structure described above and the structure represented by the above formula (2).

ここで、「金属基板」とは、表層の少なくとも一部に金属原子を含む基板をいう。 Here, the "metal substrate" refers to a substrate containing a metal atom in at least a part of the surface layer.

本発明の基板の製造方法によれば、金属基板の表面に金属含有層が形成された基板を簡便に製造することができる。本発明の組成物は、当該基板の製造方法に好適に用いることができる。本発明の重合体は、当該組成物の重合体成分として好適に用いることができる。従って、これらは、今後ますます微細化が進行すると予想される半導体デバイスの加工プロセス等に好適に用いることができる。 According to the method for manufacturing a substrate of the present invention, it is possible to easily manufacture a substrate having a metal-containing layer formed on the surface of the metal substrate. The composition of the present invention can be suitably used in the method for producing the substrate. The polymer of the present invention can be suitably used as a polymer component of the composition. Therefore, these can be suitably used for processing processes of semiconductor devices, which are expected to be further miniaturized in the future.

以下、当該基板の製造方法の実施の形態について詳述する。 Hereinafter, embodiments of the method for manufacturing the substrate will be described in detail.

<基板の製造方法>
当該基板の製造方法は、金属基板(以下、「金属基板(X)」ともいう)の少なくとも一方の表面に組成物(以下、「組成物(S)」ともいう)を塗工する工程(以下、「塗工工程」ともいう)と、上記塗工工程により形成された塗工膜(以下、「塗工膜(P)」ともいう)の上記金属基板(X)とは反対側の表面の少なくとも一部に金属含有層(以下、「金属含有層(Y)」ともいう)を形成する工程(以下、「金属含有層形成工程」ともいう)とを備える。当該基板の製造方法は、上記組成物(S)として、同一分子上に第1末端構造(以下、「末端構造(I)」ともいう)及び第2末端構造(以下、「末端構造(II)」ともいう)を有する重合体(以下、「[A]重合体」ともいう)と溶媒(以下、「[B]溶媒」ともいう)とを含有し、上記末端構造(I)及び末端構造(II)が、下記式(1)で表される構造(以下、「構造(1)」ともいう)及び下記式(2)で表される構造(以下、「構造(2)」ともいう)からなる群より選ばれる少なくとも1種であるものを用いる。
<Manufacturing method of substrate>
The method for manufacturing the substrate is a step of applying a composition (hereinafter, also referred to as “composition (S)”) to at least one surface of a metal substrate (hereinafter, also referred to as “metal substrate (X)”) (hereinafter, also referred to as “composition (S)”). , Also referred to as "coating process") and the surface of the coating film formed by the coating process (hereinafter, also referred to as "coating film (P)") on the side opposite to the metal substrate (X). At least a part thereof includes a step of forming a metal-containing layer (hereinafter, also referred to as “metal-containing layer (Y)”) (hereinafter, also referred to as “metal-containing layer forming step”). The method for producing the substrate is as follows, as the composition (S), on the same molecule, a first terminal structure (hereinafter, also referred to as “terminal structure (I)”) and a second terminal structure (hereinafter, “terminal structure (II)). (Hereinafter, also referred to as “[A] polymer”) and a solvent (hereinafter, also referred to as “[B] solvent”), and the terminal structure (I) and the terminal structure (hereinafter, also referred to as “[B] solvent”). II) is derived from the structure represented by the following formula (1) (hereinafter, also referred to as "structure (1)") and the structure represented by the following formula (2) (hereinafter, also referred to as "structure (2)"). At least one selected from the group is used.

Figure 2020071339
Figure 2020071339

上記式(1)中、Lは、炭素数1〜20の3価の基である。Aは、金属原子と化学結合可能な官能基を含む1価の基である。Xは、水素原子、炭素数1〜20の1価の有機基、−SH又は−S−A11である。A11は、金属原子と化学結合可能な官能基を含む1価の基である。nは、(−L(−A)−)で表されるブロックを構成する構造単位の数を示し、2以上の整数である。複数のAは同一でも異なっていてもよく、A及びA11は、同一でも異なっていてもよい。*は、上記[A]重合体における上記式(1)で表される構造以外の部分に結合する部位を示す。In the above formula (1), L 1 is a trivalent group having 1 to 20 carbon atoms. A 1 is a monovalent group containing a functional group capable of chemically bonding with a metal atom. X is a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, -SH or -SA 11 . A 11 is a monovalent group containing a functional group capable of chemically bonding with a metal atom. n indicates the number of structural units constituting the block represented by (-L 1 (-A 1 )-) n, and is an integer of 2 or more. A plurality of A 1s may be the same or different, and A 1 and A 11 may be the same or different. * Indicates a site of the polymer [A] that binds to a portion other than the structure represented by the above formula (1).

上記式(2)中、Lは、−S−、−NR−又は−NA22−である。A及びA22は、それぞれ独立して、金属原子と化学結合可能な官能基を含む1価の基である。Rは、水素原子又は炭素数1〜20の1価の炭化水素基である。mは、0又は1である。*は、上記[A]重合体における上記式(2)で表される構造以外の部分に結合する部位を示す。In the formula (2), L 2 is, -S -, - NR- or -NA 22 - a. A 2 and A 22 are monovalent groups each independently containing a functional group capable of chemically bonding with a metal atom. R is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. m is 0 or 1. * Indicates a site of the polymer [A] that binds to a portion other than the structure represented by the above formula (2).

当該基板の製造方法により、金属基板(X)とこの金属基板(X)の少なくとも一方の面側に形成された金属含有層(Y)とを備える基板が製造される。当該基板の製造方法によれば、上記各工程を備え、組成物(S)が[A]重合体を含有することで、金属基板の表面に金属含有層が形成された基板を簡便に製造することができる。当該基板の製造方法が上記構成を備えることで、上記効果を奏する理由については必ずしも明確ではないが例えば以下のように推察することができる。すなわち、[A]重合体は、両方の末端に、金属原子と化学結合可能な官能基を含む末端構造を有している。金属基板の表面に組成物(S)を塗工することにより、[A]重合体は一方の末端構造中の金属原子と化学結合可能な官能基が金属基板(X)中の金属原子と化学結合することにより金属基板(X)の表面に配置される。この配置された[A]重合体の他方の末端構造中の金属原子と化学結合可能な官能基を用いることにより、容易に金属含有層を形成することができる。このように、当該基板の製造方法によれば、金属基板の表面に金属含有層が形成された基板を簡便に製造することができる。
以下、各工程について説明する。
According to the method for manufacturing the substrate, a substrate including the metal substrate (X) and the metal-containing layer (Y) formed on at least one surface side of the metal substrate (X) is manufactured. According to the method for producing the substrate, each of the above steps is provided, and the composition (S) contains the polymer [A] to easily produce a substrate having a metal-containing layer formed on the surface of the metal substrate. be able to. The reason why the above-mentioned effect is obtained by providing the above-mentioned configuration in the manufacturing method of the substrate is not always clear, but it can be inferred as follows, for example. That is, the [A] polymer has a terminal structure containing a functional group capable of chemically bonding with a metal atom at both ends. By coating the surface of the metal substrate with the composition (S), the [A] polymer has a functional group capable of chemically bonding with a metal atom in one of the terminal structures and chemically with the metal atom in the metal substrate (X). By being bonded, it is arranged on the surface of the metal substrate (X). A metal-containing layer can be easily formed by using a functional group capable of chemically bonding with a metal atom in the other terminal structure of the arranged [A] polymer. As described above, according to the method for manufacturing the substrate, it is possible to easily manufacture the substrate in which the metal-containing layer is formed on the surface of the metal substrate.
Hereinafter, each step will be described.

<塗工工程>
本工程では、金属基板(X)の少なくとも一方の表面に組成物(S)を塗工する。
<Coating process>
In this step, the composition (S) is applied to at least one surface of the metal substrate (X).

金属基板(X)が含む金属原子(第1金属原子、以下、「金属原子(A)」ともいう)としては、金属元素の原子であれば特に限定されない。ケイ素及びホウ素は、金属原子(A)に含まれない。金属原子(A)としては、例えば銅、鉄、亜鉛、コバルト、アルミニウム、スズ、タングステン、ジルコニウム、チタン、タンタル、ゲルマニウム、モリブデン、ルテニウム、金、銀、白金、パラジウム、ニッケル等が挙げられる。これらの中で、銅又はコバルトが好ましい。 The metal atom (first metal atom, hereinafter also referred to as "metal atom (A)") contained in the metal substrate (X) is not particularly limited as long as it is an atom of a metal element. Silicon and boron are not included in the metal atom (A). Examples of the metal atom (A) include copper, iron, zinc, cobalt, aluminum, tin, tungsten, zirconium, titanium, tantalum, germanium, molybdenum, ruthenium, gold, silver, platinum, palladium, nickel and the like. Of these, copper or cobalt is preferred.

金属基板(X)における金属原子(A)の含有形態としては、例えば金属単体、合金、金属窒化物、金属酸化物、シリサイド等が挙げられる。 Examples of the form containing the metal atom (A) in the metal substrate (X) include simple substances of metals, alloys, metal nitrides, metal oxides, VDD and the like.

金属単体としては、例えば銅、コバルト、アルミニウム、タングステン等の金属の単体等が挙げられる。
合金としては、例えばニッケル−銅合金、コバルト−ニッケル合金、金−銀合金等が挙げられる。
金属窒化物としては、例えば窒化チタン、窒化タンタル、窒化鉄、窒化アルミニウム等が挙げられる。
金属酸化物としては、例えば酸化タンタル、酸化アルミニウム、酸化鉄、酸化銅等が挙げられる。
シリサイドとしては、例えば鉄シリサイド、モリブデンシリサイド等が挙げられる。
これらの中で、金属単体が好ましく、銅又はコバルトがより好ましい。
Examples of the simple substance of the metal include a simple substance of a metal such as copper, cobalt, aluminum, and tungsten.
Examples of the alloy include nickel-copper alloy, cobalt-nickel alloy, gold-silver alloy and the like.
Examples of the metal nitride include titanium nitride, tantalum nitride, iron nitride, aluminum nitride and the like.
Examples of the metal oxide include tantalum oxide, aluminum oxide, iron oxide, copper oxide and the like.
Examples of the silicide include iron silicide, molybdenum silicide and the like.
Among these, a simple substance of metal is preferable, and copper or cobalt is more preferable.

金属基板(X)は、表層中に、金属原子(A)を含む領域(以下、「領域(I)」ともいう)以外に、例えば実質的に非金属原子(以下、「非金属原子(C)」ともいう)のみからなる領域(以下、「領域(II)」ともいう)等を有していてもよい。非金属原子(C)としては、例えばケイ素、ホウ素、炭素、酸素、窒素、水素等が挙げられる。 In the surface layer of the metal substrate (X), in addition to the region containing the metal atom (A) (hereinafter, also referred to as “region (I)”), for example, substantially non-metal atom (hereinafter, “non-metal atom (C)”). ) ”) (Hereinafter, also referred to as“ region (II) ”) and the like. Examples of the non-metal atom (C) include silicon, boron, carbon, oxygen, nitrogen, hydrogen and the like.

領域(II)中における非金属原子(C)の含有形態としては、例えば非金属単体、非金属酸化物、非金属窒化物、非金属酸窒化物、非金属炭化酸化物等が挙げられる。 Examples of the form containing the non-metal atom (C) in the region (II) include non-metal simple substances, non-metal oxides, non-metal nitrides, non-metal oxynitrides, non-metal carbide oxides and the like.

非金属単体としては、例えばケイ素、ホウ素、炭素等の非金属の単体等が挙げられる。
非金属酸化物としては、例えば二酸化ケイ素(SiO)、テトラエトキシシラン(TEOS)等のテトラアルコキシシランなどの加水分解性シランの加水分解縮合物、酸化ホウ素等が挙げられる。
非金属窒化物としては、例えば窒化ケイ素、窒化ホウ素等が挙げられる。
非金属窒酸化物としては、例えば窒酸化ケイ素、窒酸化ホウ素等が挙げられる。
非金属炭化酸化物としては、例えば炭化酸化ケイ素(SiOC)等が挙げられる。
Examples of the non-metal simple substance include non-metal simple substances such as silicon, boron, and carbon.
Examples of the non-metal oxide include hydrolyzable condensates of hydrolyzable silanes such as tetraalkoxysilanes such as silicon dioxide (SiO 2 ) and tetraethoxysilane (TEOS), and boron oxide.
Examples of the non-metal nitride include silicon nitride and boron nitride.
Examples of the non-metal nitrogen oxide include silicon nitrogen oxide and boron nitrogen oxide.
Examples of the non-metal carbonized oxide include silicon carbide (SiOC) and the like.

金属基板(X)が領域(I)及び領域(II)を有する場合、金属基板(X)の表層における領域(I)及び領域(II)の存在形状としては特に限定されず、例えば平面視で面状、点状、ストライプ状等が挙げられる。領域(I)及び領域(II)の大きさは特に限定されず、適宜所望の大きさの領域とすることができる。 When the metal substrate (X) has the region (I) and the region (II), the existing shape of the region (I) and the region (II) on the surface layer of the metal substrate (X) is not particularly limited, and is, for example, in a plan view. Plane-like, dot-like, striped-like, and the like can be mentioned. The sizes of the region (I) and the region (II) are not particularly limited, and can be appropriately set to a desired size.

金属基板(X)の形状としては、特に限定されず、板状(基板)、球状等、適宜所望の形状とすることができる。 The shape of the metal substrate (X) is not particularly limited, and can be appropriately formed into a desired shape such as a plate shape (board) or a spherical shape.

金属基板(X)は、例えば5質量%程度のシュウ酸水溶液で、表面を洗浄しておくことが好ましい。 The surface of the metal substrate (X) is preferably washed with, for example, an aqueous solution of oxalic acid of about 5% by mass.

組成物(S)の塗工方法としては、例えばスピンコート法等が挙げられる。上記塗工後に加熱してもよい。この加熱の温度の下限としては、50℃が好ましく、80℃がより好ましい。上記温度の上限としては、200℃が好ましく、150℃がより好ましい。上記加熱の時間の下限としては、10秒が好ましく、30秒がより好ましい。上記時間の上限としては、1時間が好ましく、10分がより好ましい。上記加熱後に、金属基板(X)の表面に化学結合していない[A]重合体を、例えばプロピレングリコールモノメチルエーテルアセテート(PGMEA)等の溶媒を用いて洗浄し除去することが好ましい。このようにして、塗工膜(P)が形成される。 Examples of the coating method of the composition (S) include a spin coating method and the like. It may be heated after the above coating. The lower limit of the heating temperature is preferably 50 ° C., more preferably 80 ° C. The upper limit of the temperature is preferably 200 ° C., more preferably 150 ° C. As the lower limit of the heating time, 10 seconds is preferable, and 30 seconds is more preferable. The upper limit of the time is preferably 1 hour, more preferably 10 minutes. After the heating, it is preferable to wash and remove the [A] polymer that is not chemically bonded to the surface of the metal substrate (X) with a solvent such as propylene glycol monomethyl ether acetate (PGMEA). In this way, the coating film (P) is formed.

塗工膜(P)の表面における水の接触角の下限としては、70°が好ましく、80°がより好ましく、85°がさらに好ましい。上記接触角の上限としては、例えば100°である。 The lower limit of the contact angle of water on the surface of the coating film (P) is preferably 70 °, more preferably 80 °, and even more preferably 85 °. The upper limit of the contact angle is, for example, 100 °.

以下、組成物(S)について説明する。 Hereinafter, the composition (S) will be described.

<組成物(S)>
組成物(S)は、金属基板(X)とこの金属基板(X)の少なくとも一方の面側に形成された金属含有層(Y)とを備える基板の製造方法に用いられる。組成物(S)は、[A]重合体及び[B]溶媒を含有する。組成物(S)は、[A]重合体及び[B]溶媒以外に、本発明の効果を損なわない範囲において、他の成分を含有していてもよい。以下、各成分について説明する。
<Composition (S)>
The composition (S) is used in a method for producing a substrate including a metal substrate (X) and a metal-containing layer (Y) formed on at least one surface side of the metal substrate (X). The composition (S) contains the [A] polymer and the [B] solvent. The composition (S) may contain other components in addition to the [A] polymer and the [B] solvent as long as the effects of the present invention are not impaired. Hereinafter, each component will be described.

[[A]重合体]
[A]重合体は、同一分子上に末端構造(I)及び末端構造(II)を有する重合体である。[A]重合体は、通常、末端構造(I)及び末端構造(II)の間に、単量体(以下、「単量体(a)」ともいう)に由来する構造単位(以下、「構造単位(A)」ともいう)を有する。
[[A] Polymer]
[A] The polymer is a polymer having a terminal structure (I) and a terminal structure (II) on the same molecule. The [A] polymer is usually a structural unit derived from a monomer (hereinafter, also referred to as “monomer (a)”) between the terminal structure (I) and the terminal structure (II) (hereinafter, “A”. It also has a structural unit (A).

(末端構造)
末端構造(I)及び末端構造(II)は、構造(1)及び構造(2)からなる群より選ばれる少なくとも1種である。
(End structure)
The terminal structure (I) and the terminal structure (II) are at least one selected from the group consisting of the structure (1) and the structure (2).

構造(1)における上記式(1)中のA、上記式(1)のXが−S−A11である場合のA11、構造(2)における上記式(2)中のA、及び上記式(2)のLが−NA22−である場合のA22は、金属原子と化学結合可能な官能基(以下、「官能基(M)」ともいう)を含む1価の基(以下、「基(I)」ともいう)である。 A 1 in the formula (1) in the structure (1), A 11 When X in the above formula (1) is -S-A 11, A 2 in the formula (2) in the structure (2), and the formula (2) L 2 is -NA 22 - a 22 when it is a metal atom capable of chemically bonding functional groups (hereinafter, also referred to as "functional group (M)") a monovalent group including (Hereinafter, also referred to as "group (I)").

官能基(M)は、金属原子と化学結合可能な官能基である。官能基(M)と化学結合可能な金属原子としては、例えば金属基板(X)が含む金属原子(A)、後述する金属含有層(Y)が含む金属原子(第2金属原子、以下、「金属原子(B)」ともいう)等が挙げられる。金属原子−官能基(M)間の化学結合としては、例えば共有結合、イオン結合、配位結合等が挙げられる。これらの中で、金属原子−官能基(M)間の結合力がより大きい観点から、配位結合が好ましい。 The functional group (M) is a functional group capable of chemically bonding with a metal atom. Examples of the metal atom that can be chemically bonded to the functional group (M) include a metal atom (A) contained in the metal substrate (X) and a metal atom (second metal atom, hereinafter referred to as “2nd metal atom” contained in the metal-containing layer (Y) described later. (Also referred to as "metal atom (B)") and the like. Examples of the chemical bond between the metal atom and the functional group (M) include a covalent bond, an ionic bond, and a coordination bond. Among these, a coordination bond is preferable from the viewpoint that the bonding force between the metal atom and the functional group (M) is larger.

官能基(M)としては、例えばリン酸基、ニトリル基、カルボキシ基、エステル基、ヒドロキシ基等が挙げられる。リン酸基とは、−PO(OH)で表される基をいう。エステル基とは、−COOR(Rは1価の有機基)で表される基をいう。Examples of the functional group (M) include a phosphoric acid group, a nitrile group, a carboxy group, an ester group, a hydroxy group and the like. The phosphate group refers to a group represented by -PO (OH) 2. The ester group means a group represented by -COOR (R is a monovalent organic group).

基(I)としては、例えば下記式(i)で表される基(以下、「基(i)」ともいう)等が挙げられる。 Examples of the group (I) include a group represented by the following formula (i) (hereinafter, also referred to as “group (i)”).

Figure 2020071339
Figure 2020071339

上記式(i)中、Eは、単結合、−COO−、−CO−、−O−、−NH−、−NHCO−又は−CONH−である。Qは、単結合又は炭素数1〜20の2価の炭化水素基である。Rは、1価の官能基(M)である。pは、0〜10の整数である。但し、pが1以上の場合、Qが単結合である場合はない。*は、上記式(1)におけるLに結合する部位を示す。In the above formula (i), E is a single bond, -COO-, -CO-, -O-, -NH-, -NHCO- or -CONH-. Q is a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. R 1 is a monovalent functional group (M). p is an integer from 0 to 10. However, when p is 1 or more, Q is not a single bond. * Indicates a site that binds to L 1 in the above formula (1).

Eとしては、単結合又は−COO−が好ましく、単結合がより好ましい。 As E, a single bond or -COO- is preferable, and a single bond is more preferable.

Qで表される炭素数1〜20の2価の炭化水素基としては、例えばアルカンジイル基、シクロアルカンジイル基、アレーンジイル基、アレーンジイルアルカンジイル基等が挙げられる。 Examples of the divalent hydrocarbon group having 1 to 20 carbon atoms represented by Q include an alkanediyl group, a cycloalkanediyl group, an arenediyl group, and an allenediyl alkanediyl group.

Qとしては、単結合又はアルカンジイル基が好ましく、単結合がより好ましい。 As Q, a single bond or an alkanediyl group is preferable, and a single bond is more preferable.

で表される1価の官能基(M)としては、上記官能基(M)として例示した基のうち1価のもの等が挙げられる。Examples of the monovalent functional group (M) represented by R 1 include monovalent groups among the groups exemplified as the functional group (M).

pとしては、0〜2が好ましく、0又は1がより好ましく、0がさらに好ましい。 As p, 0 to 2, 0 or 1, is more preferable, and 0 is even more preferable.

基(i)としては、リン酸基、シアノアルキル基、カルボキシ基、カルボキシアルキル基、エステル基、ヒドロキシ基又はヒドロキシアルキル基が好ましい。シアノアルキル基としては、例えば1−シアノ−1−メチルエチル基等が挙げられる。カルボキシアルキル基としては、例えば2−カルボキシエチル基等が挙げられる。エステル基としては、例えばメトキシカルボニル基等が挙げられる。ヒドロキシアルキル基としては、例えば2−ヒドロキシエチル基等が挙げられる。 As the group (i), a phosphate group, a cyanoalkyl group, a carboxy group, a carboxyalkyl group, an ester group, a hydroxy group or a hydroxyalkyl group is preferable. Examples of the cyanoalkyl group include a 1-cyano-1-methylethyl group. Examples of the carboxyalkyl group include a 2-carboxyethyl group and the like. Examples of the ester group include a methoxycarbonyl group and the like. Examples of the hydroxyalkyl group include a 2-hydroxyethyl group and the like.

上記式(1)におけるAとしては、リン酸基が好ましい。また、上記式(2)におけるAとしては、ニトリル基、カルボキシ基、エステル基及びヒドロキシ基からなる群より選ばれる少なくとも1種が好ましい。A phosphoric acid group is preferable as A 1 in the above formula (1). Further, as A 2 in the above formula (2), at least one selected from the group consisting of a nitrile group, a carboxy group, an ester group and a hydroxy group is preferable.

上記式(1)におけるLは、[A]重合体の主鎖の一部を構成する基である。「主鎖」とは、[A]重合体の原子鎖のうち最も長いものをいう。Lで表される炭素数1〜20の3価の基としては、例えば炭素−炭素二重結合含有基に由来する基、オキシアルキレン基に由来する基等が挙げられる。 L 1 in the above formula (1) is a group constituting a part of the main chain of the [A] polymer. The "main chain" refers to the longest atomic chain of the [A] polymer. Examples of the trivalent group having 1 to 20 carbon atoms represented by L 1 include a group derived from a carbon-carbon double bond-containing group, a group derived from an oxyalkylene group, and the like.

上記式(1)のXで表される炭素数1〜20の1価の有機基としては、例えば炭素数1〜20の1価の炭化水素基、この炭化水素基の炭素−炭素間に2価のヘテロ原子含有基を含む基、上記炭化水素基及び上記2価のヘテロ原子含有基を含む基が有する水素原子の一部又は全部を1価のヘテロ原子含有基で置換した基等が挙げられる。「有機基」とは、少なくとも1個の炭素原子を含む基をいう。 Examples of the monovalent organic group having 1 to 20 carbon atoms represented by X in the above formula (1) include a monovalent hydrocarbon group having 1 to 20 carbon atoms and 2 carbon-carbon groups of the hydrocarbon group. Examples include a group containing a valent heteroatom-containing group, a group in which a part or all of the hydrogen atoms of the above-mentioned hydrocarbon group and the above-mentioned divalent heteroatom-containing group are substituted with a monovalent heteroatom-containing group, and the like. Be done. "Organic group" means a group containing at least one carbon atom.

「炭化水素基」とは、鎖状炭化水素基、脂環式炭化水素基及び芳香族炭化水素基が含まれる。この「炭化水素基」は、飽和炭化水素基でも不飽和炭化水素基でもよい。「鎖状炭化水素基」とは、環状構造を含まず、鎖状構造のみで構成された炭化水素基をいい、直鎖状炭化水素基及び分岐状炭化水素基の両方を含む。「脂環式炭化水素基」とは、環構造としては脂環構造のみを含み、芳香環構造を含まない炭化水素基をいい、単環の脂環式炭化水素基及び多環の脂環式炭化水素基の両方を含む。但し、脂環構造のみで構成されている必要はなく、その一部に鎖状構造を含んでいてもよい。「芳香族炭化水素基」とは、環構造として芳香環構造を含む炭化水素基をいう。但し、芳香環構造のみで構成されている必要はなく、その一部に鎖状構造や脂環構造を含んでいてもよい。「環員数」とは、脂環構造、芳香環構造、脂肪族複素環構造及び芳香族複素環構造の環を構成する原子数をいい、多環の場合は、この多環を構成する原子数をいう。 The "hydrocarbon group" includes a chain hydrocarbon group, an alicyclic hydrocarbon group and an aromatic hydrocarbon group. This "hydrocarbon group" may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. The "chain hydrocarbon group" refers to a hydrocarbon group composed only of a chain structure without containing a cyclic structure, and includes both a linear hydrocarbon group and a branched hydrocarbon group. The "alicyclic hydrocarbon group" refers to a hydrocarbon group containing only an alicyclic structure as a ring structure and not containing an aromatic ring structure, and refers to a monocyclic alicyclic hydrocarbon group and a polycyclic alicyclic group. Contains both hydrocarbon groups. However, it does not have to be composed only of an alicyclic structure, and a chain structure may be included as a part thereof. The "aromatic hydrocarbon group" refers to a hydrocarbon group containing an aromatic ring structure as a ring structure. However, it does not have to be composed only of an aromatic ring structure, and a chain structure or an alicyclic structure may be included as a part thereof. The "ring member number" refers to the number of atoms constituting the alicyclic structure, the aromatic ring structure, the aliphatic heterocyclic structure and the aromatic heterocyclic structure, and in the case of a polycycle, the number of atoms constituting the polycycle. To say.

炭素数1〜20の1価の炭化水素基としては、炭素数1〜20の1価の鎖状炭化水素基、炭素数3〜20の1価の脂環式炭化水素基、炭素数6〜20の1価の芳香族炭化水素基等が挙げられる。 The monovalent hydrocarbon groups having 1 to 20 carbon atoms include monovalent chain hydrocarbon groups having 1 to 20 carbon atoms, monovalent alicyclic hydrocarbon groups having 3 to 20 carbon atoms, and 6 to 20 carbon atoms. Examples thereof include 20 monovalent aromatic hydrocarbon groups.

炭素数1〜20の1価の鎖状炭化水素基としては、例えば
メチル基、エチル基、n−プロピル基、i−プロピル基等のアルキル基;
エテニル基、プロペニル基、ブテニル基等のアルケニル基;
エチニル基、プロピニル基、ブチニル基等のアルキニル基などが挙げられる。
Examples of the monovalent chain hydrocarbon group having 1 to 20 carbon atoms include an alkyl group such as a methyl group, an ethyl group, an n-propyl group, and an i-propyl group;
Alkenyl groups such as ethenyl group, propenyl group, butenyl group;
Examples thereof include an alkynyl group such as an ethynyl group, a propynyl group and a butynyl group.

炭素数3〜20の1価の脂環式炭化水素基としては、例えば
シクロペンチル基、シクロヘキシル基等の単環の脂環式飽和炭化水素基;
シクロペンテニル基、シクロヘキセニル基等の単環の脂環式不飽和炭化水素基;
ノルボルニル基、アダマンチル基、トリシクロデシル基等の多環の脂環式飽和炭化水素基;
ノルボルネニル基、トリシクロデセニル基等の多環の脂環式不飽和炭化水素基などが挙げられる。
Examples of the monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms include a monocyclic alicyclic saturated hydrocarbon group such as a cyclopentyl group and a cyclohexyl group;
Monocyclic alicyclic unsaturated hydrocarbon groups such as cyclopentenyl group and cyclohexenyl group;
Polycyclic alicyclic saturated hydrocarbon groups such as norbornyl group, adamantyl group, and tricyclodecyl group;
Examples thereof include polycyclic alicyclic unsaturated hydrocarbon groups such as norbornenyl group and tricyclodecenyl group.

炭素数6〜20の1価の芳香族炭化水素基としては、例えば
フェニル基、トリル基、キシリル基、ナフチル基、アントリル基等のアリール基;
ベンジル基、フェネチル基、ナフチルメチル基、アントリルメチル基等のアラルキル基などが挙げられる。
Examples of the monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms include an aryl group such as a phenyl group, a tolyl group, a xsilyl group, a naphthyl group and an anthryl group;
Examples thereof include an aralkyl group such as a benzyl group, a phenethyl group, a naphthylmethyl group and an anthrylmethyl group.

2価又は1価のヘテロ原子含有基を構成するヘテロ原子としては、例えば酸素原子、硫黄原子、リン原子、ケイ素原子、ハロゲン原子等が挙げられる。ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられる。 Examples of the hetero atom constituting the divalent or monovalent hetero atom-containing group include an oxygen atom, a sulfur atom, a phosphorus atom, a silicon atom, a halogen atom and the like. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

2価のヘテロ原子含有基としては、例えば−O−、−CO−、−S−、−CS−、これらのうちの2つ以上を組み合わせた基等が挙げられる。これらの中で−O−が好ましい。 Examples of the divalent heteroatom-containing group include -O-, -CO-, -S-, -CS-, and a group in which two or more of these are combined. Of these, -O- is preferable.

1価のヘテロ原子含有基としては、ハロゲン原子等が挙げられる。 Examples of the monovalent heteroatom-containing group include a halogen atom and the like.

上記式(1)のXとしては水素原子又は−SHが好ましく、水素原子がより好ましい。 As X in the above formula (1), a hydrogen atom or -SH is preferable, and a hydrogen atom is more preferable.

上記式(1)のnの上限としては、10が好ましく、5がより好ましい。 As the upper limit of n in the above formula (1), 10 is preferable, and 5 is more preferable.

上記式(1)中の(−L(−A)−)で表される構造単位の含有割合の下限としては、[A]重合体を構成する全構造単位に対して、0.1モル%が好ましく、0.5モル%がより好ましく、1モル%がさらに好ましく、2モル%が特に好ましい。上記含有割合の上限としては、30モル%が好ましく、20モル%がより好ましく、10モル%がさらに好ましく、7モル%が特に好ましい。 The lower limit of the content ratio of the structural unit represented by (-L 1 (-A 1 )-) in the above formula (1) is 0.1 with respect to all the structural units constituting the [A] polymer. Mol% is preferred, 0.5 mol% is more preferred, 1 mol% is even more preferred, and 2 mol% is particularly preferred. The upper limit of the content ratio is preferably 30 mol%, more preferably 20 mol%, further preferably 10 mol%, and particularly preferably 7 mol%.

上記式(2)のLの−NR−におけるRで表される炭素数1〜20の1価の炭化水素基としては、例えば上記式(1)のXとして例示した炭素数1〜20の1価の炭化水素基と同様の基等が挙げられる。Lとしては、−S−又は−NR−が好ましく、−NR−の中では−NH−が好ましい。 Examples of the monovalent hydrocarbon group having 1 to 20 carbon atoms represented by R in −NR− of L 2 of the above formula (2) include those having 1 to 20 carbon atoms exemplified as X in the above formula (1). Examples thereof include groups similar to monovalent hydrocarbon groups. As L 2 , -S- or -NR- is preferable, and -NH- is preferable among -NR-.

mとしては、0が好ましい。 As m, 0 is preferable.

末端構造(I)としては、例えばビニルリン酸に由来するブロックを含む構造、(メタ)アクリル酸に由来するブロックを含む構造、(−CH−CH(OH)−)のブロックを含む構造等が挙げられる。Examples of the terminal structure (I) include a structure containing a block derived from vinyl phosphate, a structure containing a block derived from (meth) acrylic acid, a structure containing a block derived from ( -CH 2- CH (OH)-), and the like. Can be mentioned.

末端構造(II)としては、シアノアルキル基、カルボキシアルキル基、ヒドロキシアルキル基等が挙げられる。 Examples of the terminal structure (II) include a cyanoalkyl group, a carboxyalkyl group, and a hydroxyalkyl group.

末端構造(I)中の官能基(M)と、末端構造(II)中の官能基(M)とは互いに異なることが好ましい。末端構造(I)と末端構造(II)とで官能基(M)を異なるものとすると、金属基板(X)の金属原子(A)とは異なる金属原子を含む金属含有層(Y)を形成することがより容易になる。 It is preferable that the functional group (M) in the terminal structure (I) and the functional group (M) in the terminal structure (II) are different from each other. When the functional group (M) is different between the terminal structure (I) and the terminal structure (II), a metal-containing layer (Y) containing a metal atom different from the metal atom (A) of the metal substrate (X) is formed. It will be easier to do.

末端構造(I)が構造(1)であり、末端構造(II)が構造(2)であることが好ましい。各末端構造が上記各構造とすると、金属基板(X)の金属原子(A)とは異なる金属原子を含む金属含有層(Y)を形成することがより容易になる。 It is preferable that the terminal structure (I) is the structure (1) and the terminal structure (II) is the structure (2). When each of the terminal structures has the above-mentioned structure, it becomes easier to form a metal-containing layer (Y) containing a metal atom different from the metal atom (A) of the metal substrate (X).

(構造単位(A))
構造単位(A)は、単量体(a)に由来する構造単位である。[A]重合体は、構造単位(A)を末端構造(I)及び末端構造(II)の間に通常有している。
(Structural unit (A))
The structural unit (A) is a structural unit derived from the monomer (a). [A] The polymer usually has a structural unit (A) between the terminal structure (I) and the terminal structure (II).

構造単位(A)を与える単量体(a)としては、例えばビニル芳香族化合物、(メタ)アクリル酸又は(メタ)アクリル酸エステル、置換又は非置換のエチレン、架橋性基を有する重合性化合物等が挙げられる。「架橋性基」とは、加熱条件下、活性エネルギー線照射条件下、酸性条件下等における反応により、架橋構造を形成する基をいう。単量体(a)として、これらの化合物を1種又は2種以上用いていてもよい。 Examples of the monomer (a) that gives the structural unit (A) include a vinyl aromatic compound, (meth) acrylic acid or (meth) acrylic acid ester, substituted or unsubstituted ethylene, and a polymerizable compound having a crosslinkable group. And so on. The "crosslinkable group" refers to a group that forms a crosslinked structure by a reaction under heating conditions, active energy ray irradiation conditions, acidic conditions, and the like. As the monomer (a), one kind or two or more kinds of these compounds may be used.

ビニル芳香族化合物としては、例えば
スチレン;
α−メチルスチレン、o−メチルスチレン、m−メチルスチレン、p−メチルスチレン、p−tert−ブチルスチレン、2,4,6−トリメチルスチレン、p−メトキシスチレン、p−tert−ブトキシスチレン、o−ヒドロキシスチレン、m−ヒドロキシスチレン、p−ヒドロキシスチレン、m−クロロメチルスチレン、p−クロロメチルスチレン、p−クロロスチレン、p−ブロモスチレン、p−ヨードスチレン、p−ニトロスチレン、p−シアノスチレン等の置換スチレン;
ビニルナフタレン;
ビニルメチルナフタレン、ビニルクロロナフタレン等の置換ビニルナフタレン;
ビニルアントラセン;
ビニルメチルアントラセン、ビニルクロロアントラセン等の置換ビニルアントラセン;
ビニルピレン;
ビニルメチルピレン、ビニルクロロピレン等の置換ビニルピレンなどが挙げられる。
Examples of vinyl aromatic compounds include styrene;
α-Methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, p-tert-butylstyrene, 2,4,6-trimethylstyrene, p-methoxystyrene, p-tert-butoxystyrene, o- Hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, m-chloromethylstyrene, p-chloromethylstyrene, p-chlorostyrene, p-bromostyrene, p-iodostyrene, p-nitrostyrene, p-cyanostyrene, etc. Substituted styrene;
Vinyl naphthalene;
Substituted vinylnaphthalene such as vinylmethylnaphthalene and vinylchloronaphthalene;
Vinyl anthracene;
Substituted vinyl anthracene such as vinyl methyl anthracene and vinyl chloro anthracene;
Vinyl pyrene;
Examples thereof include substituted vinylpyrene such as vinylmethylpyrene and vinylchloropyrene.

(メタ)アクリル酸エステルとしては、例えば
(メタ)アクリル酸メチル、(メタ)アクリル酸エチル、(メタ)アクリル酸t−ブチル、(メタ)アクリル酸2−エチルヘキシル等の(メタ)アクリル酸アルキルエステル;
(メタ)アクリル酸シクロペンチル、(メタ)アクリル酸シクロヘキシル、(メタ)アクリル酸1−メチルシクロペンチル、(メタ)アクリル酸2−エチルアダマンチル、(メタ)アクリル酸2−(アダマンタン−1−イル)プロピル等の(メタ)アクリル酸シクロアルキルエステル;
(メタ)アクリル酸2−ヒドロキシエチル、(メタ)アクリル酸3−ヒドロキシアダマンチル、(メタ)アクリル酸3−グリシジルプロピル、(メタ)アクリル酸3−トリメチルシリルプロピル等の(メタ)アクリル酸置換アルキルエステルなどが挙げられる。
Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl esters such as methyl (meth) acrylate, ethyl (meth) acrylate, t-butyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate. ;
Cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, 1-methylcyclopentyl (meth) acrylate, 2-ethyladamantyl (meth) acrylate, 2- (adamantane-1-yl) propyl (meth) acrylate, etc. (Meta) acrylic acid cycloalkyl ester;
(Meta) acrylic acid substituted alkyl esters such as 2-hydroxyethyl (meth) acrylic acid, 3-hydroxyadamantyl (meth) acrylic acid, 3-glycidylpropyl (meth) acrylic acid, 3-trimethylsilylpropyl (meth) acrylic acid, etc. Can be mentioned.

置換エチレンとしては、例えば
プロペン、ブテン、ペンテン等のアルケン;
ビニルシクロペンタン、ビニルシクロヘキサン等のビニルシクロアルカン;
シクロペンテン、シクロヘキセン等のシクロアルケン;
ビニルリン酸、4−ヒドロキシ−1−ブテン、ビニルグリシジルエーテル、ビニルトリメチルシリルエーテル等が挙げられる。
Examples of the substituted ethylene include alkenes such as propene, butene, and pentane;
Vinyl cycloalkanes such as vinyl cyclopentane and vinyl cyclohexane;
Cycloalkenes such as cyclopentene and cyclohexene;
Examples thereof include vinyl phosphate, 4-hydroxy-1-butene, vinyl glycidyl ether, vinyl trimethylsilyl ether and the like.

架橋性基を有する重合性化合物における架橋性基としては、例えば
ビニル基、ビニロキシ基、アリル基、(メタ)アクリロイル基、スチリル基等の重合性炭素−炭素二重結合含有基;
オキシラニル基、オキシラニルオキシ基、オキセタニル基、オキセタニルオキシ基等の環状エーテル基;
シクロブタン環が縮環したフェニル基、シクロブタン環が縮環したナフチル基等のシクロブタン環が縮環したアリール基;
アセトキシフェニル基、t−ブトキシフェニル基等のアシル基又は熱解離性基で保護された芳香族性ヒドロキシ基が結合したアリール基;
アセトキシメチルフェニル基、メトキシメチルフェニル基等のアシル基又は熱解離性基で保護されたメチロール基(−CHOH)が結合したアリール基;
スルファニルメチルフェニル基、メチルスルファニルメチルフェニル基等の置換又は非置換のスルファニルメチル基(−CHSH)が結合したアリール基などが挙げられる。
Examples of the crosslinkable group in the polymerizable compound having a crosslinkable group include a polymerizable carbon-carbon double bond-containing group such as a vinyl group, a vinyloxy group, an allyl group, a (meth) acryloyl group, and a styryl group;
Cyclic ether groups such as oxylanyl group, oxylanyloxy group, oxetanyl group, oxetanyloxy group;
An aryl group in which a cyclobutane ring is fused, such as a phenyl group in which a cyclobutane ring is fused and a naphthyl group in which a cyclobutane ring is fused;
An aryl group to which an acyl group such as an acetoxyphenyl group or a t-butoxyphenyl group or an aromatic hydroxy group protected by a thermodispersible group is bonded;
An aryl group to which an acyl group such as an acetoxymethylphenyl group or a methoxymethylphenyl group or a methylol group (-CH 2 OH) protected by a thermodispersible group is bonded;
Examples thereof include an aryl group to which a substituted or unsubstituted sulfanylmethyl group (-CH 2 SH) such as a sulfanylmethylphenyl group and a methylsulfanylmethylphenyl group is bonded.

シクロブタン環が縮環したアリール基同士は、加熱条件下、共有結合を形成する。 Aryl groups in which the cyclobutane ring is fused form a covalent bond under heating conditions.

「アシル基」とは、カルボン酸からOHを除いた基であって、芳香族性ヒドロキシ基又はメチロール基の水素原子を置換して保護する基をいう。「熱解離性基」とは、芳香族性ヒドロキシ基、メチロール基又はスルファニルメチル基の水素原子を置換する基であって、加熱により解離する基をいう。 The "acyl group" is a group obtained by removing OH from a carboxylic acid and refers to a group that protects by substituting a hydrogen atom of an aromatic hydroxy group or a methylol group. The "thermally dissociable group" is a group that replaces a hydrogen atom of an aromatic hydroxy group, a methylol group, or a sulfanylmethyl group, and means a group that dissociates by heating.

保護された芳香族性ヒドロキシ基、メチロール基又はスルファニルメチル基が結合したアリール基におけるアシル基としては、例えばホルミル基、アセチル基、プロピオニル基、ブチリル基、ベンゾイル基等が挙げられる。 Examples of the acyl group in the aryl group to which the protected aromatic hydroxy group, methylol group or sulfanylmethyl group is bonded include formyl group, acetyl group, propionyl group, butyryl group, benzoyl group and the like.

保護された芳香族性ヒドロキシ基が結合したアリール基における熱解離性基としては、例えばt−ブチル基、t−アミル基等の3級アルキル基などが挙げられる。保護されたメチロール基又はスルファニルメチル基が結合したアリール基における熱解離性基としては、例えばメチル基、エチル基、プロピル基等のアルキル基などが挙げられる。 Examples of the thermally dissociable group in the aryl group to which the protected aromatic hydroxy group is bonded include a tertiary alkyl group such as a t-butyl group and a t-amyl group. Examples of the thermally dissociable group in the aryl group to which the protected methylol group or the sulfanylmethyl group is bonded include an alkyl group such as a methyl group, an ethyl group and a propyl group.

架橋性基を含む重合性化合物としては、例えば架橋性基を有するスチレン等の架橋性基を有するビニル化合物、架橋性基を有する(メタ)アクリル化合物等が挙げられる。 Examples of the polymerizable compound containing a crosslinkable group include a vinyl compound having a crosslinkable group such as styrene having a crosslinkable group, and a (meth) acrylic compound having a crosslinkable group.

構造単位(A)としては、炭化水素基置換又は非置換のスチレンに由来する構造単位(以下、「構造単位(A−1)」ともいう)が好ましい。構造単位(A)を、官能基(M)を含まない構造単位(A−1)とすると、より効果的に金属含有層(Y)を形成することができる。 As the structural unit (A), a structural unit derived from hydrocarbon group-substituted or unsubstituted styrene (hereinafter, also referred to as “structural unit (A-1)”) is preferable. When the structural unit (A) is a structural unit (A-1) that does not contain a functional group (M), the metal-containing layer (Y) can be formed more effectively.

構造単位(A−1)を与える単量体(a)としては、例えば
スチレン、α−メチルスチレン、o−メチルスチレン、m−メチルスチレン、p−メチルスチレン、p−tert−ブチルスチレン、2,4,6−トリメチルスチレン等が、
また、架橋性基を有する重合性化合物のうち、o−ビニルスチレン、m−ビニルスチレン、p−ビニルスチレン、4−ビニルベンゾシクロブテン等が挙げられる。
Examples of the monomer (a) that gives the structural unit (A-1) include styrene, α-methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, p-tert-butylstyrene, 2, 4,6-trimethylstyrene, etc.
Further, among the polymerizable compounds having a crosslinkable group, o-vinylstyrene, m-vinylstyrene, p-vinylstyrene, 4-vinylbenzocyclobutene and the like can be mentioned.

構造単位(A)がビニル芳香族化合物に由来する構造単位、(メタ)アクリル酸又は(メタ)アクリル酸エステルに由来する構造単位及び置換又は非置換のエチレンに由来する構造単位からなる群より選ばれる少なくとも1種を含む場合、構造単位(A)中のこれらの構造単位の合計含有割合の下限としては、50モル%が好ましく、80モル%がより好ましく、90モル%がさらに好ましく、95モル%が特に好ましい。上記合計含有割合は100モル%であってもよい。 The structural unit (A) is selected from the group consisting of a structural unit derived from a vinyl aromatic compound, a structural unit derived from (meth) acrylic acid or (meth) acrylic acid ester, and a structural unit derived from substituted or unsubstituted ethylene. When at least one of these structural units is contained, the lower limit of the total content of these structural units in the structural unit (A) is preferably 50 mol%, more preferably 80 mol%, further preferably 90 mol%, and 95 mol. % Is particularly preferable. The total content ratio may be 100 mol%.

構造単位(A)が架橋性基を有する重合性化合物に由来する構造単位を含む場合、構造単位(A)中のこれらの構造単位の含有割合の下限としては、0.1モル%が好ましく、0.5モル%がより好ましく、1モル%がさらに好ましく、2モル%が特に好ましく、上記含有割合の上限としては、30モル%が好ましく、20モル%がより好ましく、10モル%がさらに好ましく、5モル%が特に好ましい。 When the structural unit (A) contains a structural unit derived from a polymerizable compound having a crosslinkable group, the lower limit of the content ratio of these structural units in the structural unit (A) is preferably 0.1 mol%. 0.5 mol% is more preferable, 1 mol% is more preferable, 2 mol% is particularly preferable, and the upper limit of the content ratio is preferably 30 mol%, more preferably 20 mol%, still more preferably 10 mol%. 5 mol% is particularly preferred.

[A]重合体の数平均分子量(Mn)の下限としては、1,000が好ましく、2,000がより好ましく、3,000がさらに好ましく、4,000が特に好ましい。上記Mnの上限としては、100,000が好ましく、50,000がより好ましく、30,000がさらに好ましく、10,000が特に好ましい。[A]重合体のMnを上記範囲とすることで、より効果的に金属含有層(Y)を形成することが可能になる。 [A] As the lower limit of the number average molecular weight (Mn) of the polymer, 1,000 is preferable, 2,000 is more preferable, 3,000 is further preferable, and 4,000 is particularly preferable. As the upper limit of Mn, 100,000 is preferable, 50,000 is more preferable, 30,000 is further preferable, and 10,000 is particularly preferable. By setting the Mn of the polymer in the above range, the metal-containing layer (Y) can be formed more effectively.

[A]重合体の重量平均分子量(Mw)のMnに対する比(分散度)の上限としては、5が好ましく、2がより好ましく、1.5がより好ましく、1.3が特に好ましい。上記比の下限としては、通常1であり、1.05が好ましい。 [A] As the upper limit of the ratio (dispersity) of the weight average molecular weight (Mw) of the polymer to Mn, 5 is preferable, 2 is more preferable, 1.5 is more preferable, and 1.3 is particularly preferable. The lower limit of the ratio is usually 1, preferably 1.05.

[A]重合体の含有量の下限としては、組成物(S)における全固形分に対して、60質量%が好ましく、80質量%がより好ましく、90質量%がさらに好ましく、95質量%が特に好ましい。上記含有量は、100質量%であってもよい。「全固形分」とは、組成物(S)における[B]溶媒以外の全成分をいう。 The lower limit of the content of the polymer [A] is preferably 60% by mass, more preferably 80% by mass, further preferably 90% by mass, and 95% by mass with respect to the total solid content in the composition (S). Especially preferable. The content may be 100% by mass. The “total solid content” refers to all the components of the composition (S) other than the [B] solvent.

(重合体の合成方法)
[A]重合体は、末端構造(I)が構造(1)であり、末端構造(II)が構造(2)である重合体の場合、例えばアゾビスイソブチロニトリル(AIBN)等の構造(2)を与える重合開始剤を用い、まず、スチレン、tert−ブチルスチレン、4−ビニルベンゾシクロブテン等の構造単位(A)を与える単量体(a)を重合させ、次いで、ビニルリン酸等の構造(1)を与える単量体を重合させてブロックを形成させることにより合成することができる。
(Method for synthesizing polymer)
[A] In the case of a polymer having a terminal structure (I) having a structure (1) and a terminal structure (II) having a structure (2), for example, a structure such as azobisisobutyronitrile (AIBN). Using the polymerization initiator that gives (2), first polymerize the monomer (a) that gives the structural unit (A) such as styrene, tert-butylstyrene, 4-vinylbenzocyclobutene, and then vinyl phosphate and the like. It can be synthesized by polymerizing the monomer giving the structure (1) of (1) to form a block.

上記重合において、2−シアノ−2−プロピルドデシルトリチオカーボナート、ジベンジルトリチオカーボナート等のトリチオカーボナート化合物、シアノメチル−N−メチル−N−フェニルジチオカルバメート等のジチオカルバメート化合物、2−シアノ−2−プロピルベンゾジチオネート等のジチオベンゾエート化合物、キサントゲン酸−O−エチル−S−シアノメチル等のキサンテート化合物などをRAFT剤として用い、RAFT重合を行ってもよい。また、上記RAFT剤を用いるRAFT重合で得られた重合体に、AIBN等のラジカル発生剤と、tert−ドデカンチオール等のチオール化合物とを加えて、トリチオカーボナート末端等の末端の切り離し反応を行い、[A]重合体の主鎖の末端を水素原子等とすることができる。この切り離し反応において、ラジカル発生剤及びチオール化合物に加え、プロトン供給源として、アルコール等のプロトン性溶媒を用いることが好ましい。 In the above polymerization, trithiocarbonate compounds such as 2-cyano-2-propyldodecyltrithiocarbonate and dibenzyltrithiocarbonate, dithiocarbamate compounds such as cyanomethyl-N-methyl-N-phenyldithiocarbamate, 2- RAFT polymerization may be carried out using a dithiobenzoate compound such as cyano-2-propylbenzodithionate or a xanthate compound such as xanthate-O-ethyl-S-cyanomethyl as a RAFT agent. Further, a radical generator such as AIBN and a thiol compound such as tert-dodecanethiol are added to the polymer obtained by RAFT polymerization using the above RAFT agent, and a terminal separation reaction such as a trithiocarbonate terminal is carried out. Then, the end of the main chain of the [A] polymer can be a hydrogen atom or the like. In this separation reaction, it is preferable to use a protonal solvent such as alcohol as a proton supply source in addition to the radical generator and the thiol compound.

上述の重合体以外の[A]重合体についても公知の方法により合成することができる。 A polymer [A] other than the above-mentioned polymer can also be synthesized by a known method.

[[B]溶媒]
[B]溶媒としては、少なくとも[A]重合体及び他の成分等を溶解又は分散可能な溶媒であれば特に限定されない。
[[B] Solvent]
The solvent [B] is not particularly limited as long as it is a solvent capable of dissolving or dispersing at least the polymer [A] and other components.

[B]溶媒としては、例えばアルコール系溶媒、エーテル系溶媒、ケトン系溶媒、アミド系溶媒、エステル系溶媒、炭化水素系溶媒等が挙げられる。 Examples of the solvent [B] include alcohol solvents, ether solvents, ketone solvents, amide solvents, ester solvents, hydrocarbon solvents and the like.

アルコール系溶媒としては、例えば
メタノール、エタノール等のモノアルコール系溶媒;
エチレングリコール、1,2−プロピレングリコール等の多価アルコール系溶媒;
エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル等の多価アルコール部分エーテル系溶媒;
乳酸メチル、乳酸エチル、乳酸n−ブチル、乳酸n−アミル等の乳酸エステル系溶媒などが挙げられる。
Examples of the alcohol solvent include monoalcohol solvents such as methanol and ethanol;
Polyhydric alcohol solvents such as ethylene glycol and 1,2-propylene glycol;
Polyhydric alcohol partial ether-based solvents such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether;
Examples thereof include lactic acid ester-based solvents such as methyl lactate, ethyl lactate, n-butyl lactate, and n-amyl lactate.

エーテル系溶媒としては、例えば
ジエチルエーテル等のジアルキルエーテル系溶媒;
テトラヒドロフラン等の環状エーテル系溶媒;
アニソール等の芳香環含有エーテル系溶媒などが挙げられる。
Examples of the ether solvent include dialkyl ether solvents such as diethyl ether;
Cyclic ether solvent such as tetrahydrofuran;
Examples thereof include an aromatic ring-containing ether solvent such as anisole.

ケトン系溶媒としては、例えば
ブタノン、メチル−iso−ブチルケトン等の鎖状ケトン系溶媒;
シクロペンタノン、シクロヘキサノン等の環状ケトン系溶媒などが挙げられる。
Examples of the ketone solvent include chain ketone solvents such as butanone and methyl-iso-butyl ketone;
Cyclic ketone solvents such as cyclopentanone and cyclohexanone can be mentioned.

アミド系溶媒としては、例えば
N,N’−ジメチルイミダゾリジノン、N−メチルピロリドン等の環状アミド系溶媒;
N−メチルホルムアミド、N,N−ジメチルホルムアミド等の鎖状アミド系溶媒などが挙げられる。
Examples of the amide solvent include cyclic amide solvents such as N, N'-dimethylimidazolidinone and N-methylpyrrolidone;
Examples thereof include chain amide solvents such as N-methylformamide and N, N-dimethylformamide.

エステル系溶媒としては、例えば
酢酸エチル、酢酸n−ブチル等の酢酸エステル系溶媒;
エチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート等の多価アルコール部分エーテルカルボキレート系溶媒;
γ−ブチロラクトン、バレロラクトン等のラクトン系溶媒;
エチレンカーボネート、プロピレンカーボネート等のカーボネート系溶媒などが挙げられる。
Examples of the ester solvent include acetic acid ester solvents such as ethyl acetate and n-butyl acetate;
Polyhydric alcohol partial ether carbochelate solvent such as ethylene glycol monomethyl ether acetate, diethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate;
Lactone-based solvents such as γ-butyrolactone and valero lactone;
Examples thereof include carbonate solvents such as ethylene carbonate and propylene carbonate.

炭化水素系溶媒としては、例えば
n−ヘキサン等の脂肪族炭化水素系溶媒;
トルエン等の芳香族炭化水素系溶媒などが挙げられる。
Examples of the hydrocarbon solvent include an aliphatic hydrocarbon solvent such as n-hexane;
Examples thereof include aromatic hydrocarbon solvents such as toluene.

これらの中で、エステル系溶媒が好ましく、多価アルコール部分エーテルカルボキシレート系溶媒がより好ましく、プロピレングリコールモノメチルエーテルアセテートがさらに好ましい。組成物(S)は、[B]溶媒を1種又は2種以上含有していてもよい。 Among these, an ester solvent is preferable, a polyhydric alcohol partial ether carboxylate solvent is more preferable, and propylene glycol monomethyl ether acetate is further preferable. The composition (S) may contain one or more of the [B] solvents.

[他の成分]
他の成分としては、例えば酸発生剤又は塩基発生剤、架橋剤、界面活性剤等が挙げられる。
[Other ingredients]
Examples of other components include acid generators or base generators, cross-linking agents, surfactants and the like.

(酸発生剤又は塩基発生剤)
酸発生剤は、熱や放射線の作用により酸を発生する成分である。塩基発生剤は、熱や放射線の作用により塩基を発生する成分である。組成物(S)が酸発生剤又は塩基発生剤を含有する場合、放射線の照射や加熱工程等における加熱により、酸又は塩基が発生するので、[A]重合体等における架橋反応などを促進することができる。組成物(S)は酸発生剤又は塩基発生剤を1種又は2種以上を含有していてもよい。
(Acid generator or base generator)
An acid generator is a component that generates an acid by the action of heat or radiation. A base generator is a component that generates a base by the action of heat or radiation. When the composition (S) contains an acid generator or a base generator, the acid or base is generated by irradiation in radiation or heating in a heating step or the like, so that the cross-linking reaction in the polymer [A] or the like is promoted. be able to. The composition (S) may contain one or more acid generators or base generators.

酸発生剤としては、例えばオニウム塩化合物、N−スルホニルオキシイミド化合物等が挙げられる。 Examples of the acid generator include onium salt compounds, N-sulfonyloxyimide compounds and the like.

上記オニウム塩化合物としては、例えばトリフェニルスルホニウムトリフルオロメタンスルホネート等のスルホニウム塩、1−(4−n−ブトキシナフタレン−1−イル)テトラヒドロチオフェニウムトリフルオロメタンスルホネート等のテトラヒドロチオフェニウム塩、ジフェニルヨードニウムトリフルオロメタンスルホネート等のヨードニウム塩、トリエチルアンモニウムトリフルオロメタンスルホネート等のアンモニウム塩などが挙げられる。N−スルホニルオキシイミド化合物としては、例えばN−(トリフルオロメタンスルホニルオキシ)ビシクロ[2.2.1]ヘプト−5−エン−2,3−ジカルボキシイミド等が挙げられる。 Examples of the onium salt compound include a sulfonium salt such as triphenylsulfonium trifluoromethanesulfonate, a tetrahydrothiophenium salt such as 1- (4-n-butoxynaphthalene-1-yl) tetrahydrothiophenium trifluoromethanesulfonate, and diphenyliodonium. Examples thereof include an iodonium salt such as trifluoromethanesulfonate and an ammonium salt such as triethylammonium trifluoromethanesulfonate. Examples of the N-sulfonyloxyimide compound include N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboxyimide and the like.

塩基発生剤としては、例えば4−(メチルチオベンゾイル)−1−メチル−1−モルホリノエタン、(4−モルホリノベンゾイル)−1−ベンジル−1−ジメチルアミノプロパン、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタノン、N−(2−ニトロベンジルオキシカルボニル)ピロリジン、1−(アントラキノン−2−イル)エチルイミダゾールカルボキシレート、2−ニトロベンジルシクロヘキシルカルバメート、[[(2,6−ジニトロベンジル)オキシ]カルボニル]シクロヘキシルアミン、ビス[[(2−ニトロベンジル)オキシ]カルボニル]ヘキサン−1,6−ジアミン、トリフェニルメタノール、o−カルバモイルヒドロキシルアミド、o−カルバモイルオキシム、ヘキサアンミンコバルト(III)トリス(トリフェニルメチルボレート)等が挙げられる。 Examples of the base generator include 4- (methylthiobenzoyl) -1-methyl-1-morpholinoetan, (4-morpholinobenzoyl) -1-benzyl-1-dimethylaminopropane, and 2-benzyl-2-dimethylamino-1. -(4-Molholinophenyl) -butanone, N- (2-nitrobenzyloxycarbonyl) pyrrolidine, 1- (anthraquinone-2-yl) ethylimidazole carboxylate, 2-nitrobenzylcyclohexylcarbamate, [[(2,6-- Dinitrobenzyl) oxy] cyclohexylamine, bis [[(2-nitrobenzyl) oxy] carbonyl] hexane-1,6-diamine, triphenylmethanol, o-carbamoyl hydroxylamide, o-carbamoyloxime, hexaammine cobalt ( III) Tris (triphenylmethylborate) and the like can be mentioned.

組成物(S)が酸発生剤又は塩基発生剤を含有する場合、酸発生剤又は塩基発生剤の含有量の下限としては、[A]重合体100質量部に対して、0.1質量部が好ましく、1質量%がより好ましい。上記含有量の上限としては、20質量部が好ましく、5質量部がより好ましい。 When the composition (S) contains an acid generator or a base generator, the lower limit of the content of the acid generator or the base generator is 0.1 part by mass with respect to 100 parts by mass of the [A] polymer. Is preferable, and 1% by mass is more preferable. The upper limit of the content is preferably 20 parts by mass, more preferably 5 parts by mass.

(架橋剤)
架橋剤は、熱や酸の作用により、[A]重合体等の成分同士の架橋結合を形成するか、又は自らが架橋構造を形成する成分である。組成物(S)が架橋剤を含有すると、形成される塗工膜(P)の硬度を高めることができ、その結果、より効果的に金属含有層(Y)を形成することができる。組成物(S)は、架橋剤を1種又は2種以上含有していてもよい。
(Crosslinking agent)
The cross-linking agent is a component that forms a cross-linking bond between components such as the [A] polymer by the action of heat or acid, or forms a cross-linked structure by itself. When the composition (S) contains a cross-linking agent, the hardness of the coating film (P) to be formed can be increased, and as a result, the metal-containing layer (Y) can be formed more effectively. The composition (S) may contain one or more cross-linking agents.

架橋剤としては、例えばトリメチロールプロパントリ(メタ)アクリレート等の多官能(メタ)アクリレート化合物、ノボラック型エポキシ樹脂等のエポキシ化合物、2−ヒドロキシメチル−4,6−ジメチルフェノール等のヒドロキシメチル基置換フェノール化合物、4,4’−(1−(4−(1−(4−ヒドロキシ−3,5−ビス(メトキシメチル)フェニル)−1−メチルエチル)フェニル)エチリデン)ビス(2,6−ビス(メトキシメチル)フェノール等のアルコキシアルキル基含有フェノール化合物、(ポリ)メチロール化メラミン等のアルコキシアルキル化されたアミノ基を有する化合物、アセナフチレンとヒドロキシメチルアセナフチレンとのランダム共重合体等が挙げられる。 Examples of the cross-linking agent include polyfunctional (meth) acrylate compounds such as trimethylpropantri (meth) acrylate, epoxy compounds such as novolak type epoxy resin, and hydroxymethyl group substitutions such as 2-hydroxymethyl-4,6-dimethylphenol. Phenol compound, 4,4'-(1- (4- (1- (4-hydroxy-3,5-bis (methoxymethyl) phenyl) -1-methylethyl) phenyl) ethylidene) bis (2,6-bis) Examples thereof include an alkoxyalkyl group-containing phenol compound such as (methoxymethyl) phenol, a compound having an alkoxyalkylated amino group such as (poly) methylolated melamine, and a random copolymer of acenaphthylene and hydroxymethyl acenaphthylene. ..

組成物(S)が架橋剤を含有する場合、架橋剤の含有量の下限としては、[A]重合体100質量部に対して、1質量部が好ましく、5質量部がより好ましい。上記含有量の上限としては、100質量部が好ましく、30質量部がより好ましい。 When the composition (S) contains a cross-linking agent, the lower limit of the content of the cross-linking agent is preferably 1 part by mass and more preferably 5 parts by mass with respect to 100 parts by mass of the polymer [A]. The upper limit of the content is preferably 100 parts by mass, more preferably 30 parts by mass.

(界面活性剤)
界面活性剤は、組成物(S)の金属基板(X)への塗工性を向上させることができる成分である。
(Surfactant)
The surfactant is a component capable of improving the coatability of the composition (S) on the metal substrate (X).

組成物(S)が界面活性剤を含有する場合、界面活性剤の含有量の上限としては、[A]重合体100質量部に対して、10質量部が好ましく、2質量部がより好ましい。上記含有量の下限としては、例えば0.1質量部である。 When the composition (S) contains a surfactant, the upper limit of the content of the surfactant is preferably 10 parts by mass and more preferably 2 parts by mass with respect to 100 parts by mass of the polymer [A]. The lower limit of the content is, for example, 0.1 parts by mass.

[組成物の調製方法]
組成物(S)は、例えば[A]重合体、[B]溶媒及び必要に応じて他の成分を所定の割合で混合し、好ましくは孔径0.45μm程度の細孔を有する高密度ポリエチレンフィルター等で濾過することにより調製することができる。組成物(S)の固形分濃度の下限としては、0.1質量%が好ましく、0.5質量%がより好ましく、0.7質量%がさらに好ましい。上記固形分濃度の上限としては、30質量%が好ましく、10質量%がより好ましく、3質量%がさらに好ましい。
[Method for preparing composition]
The composition (S) is, for example, a high-density polyethylene filter obtained by mixing the polymer [A], the solvent [B] and, if necessary, other components in a predetermined ratio, and preferably having pores having a pore size of about 0.45 μm. It can be prepared by filtering with or the like. The lower limit of the solid content concentration of the composition (S) is preferably 0.1% by mass, more preferably 0.5% by mass, and even more preferably 0.7% by mass. The upper limit of the solid content concentration is preferably 30% by mass, more preferably 10% by mass, and even more preferably 3% by mass.

<金属含有層形成工程>
本工程では、上記塗工工程により形成された塗工膜(P)の上記金属基板(X)とは反対側の表面の少なくとも一部に金属含有層(Y)を形成する。
<Metal-containing layer forming process>
In this step, a metal-containing layer (Y) is formed on at least a part of the surface of the coating film (P) formed by the coating step on the side opposite to the metal substrate (X).

金属含有層(Y)が含む金属原子(B)としては、上述の金属基板(X)が含む金属原子(A)として例示した金属原子等が挙げられる。これらの中で、銅又はコバルトが好ましい。 Examples of the metal atom (B) contained in the metal-containing layer (Y) include metal atoms exemplified as the metal atom (A) contained in the metal substrate (X) described above. Of these, copper or cobalt is preferred.

金属含有層(Y)を形成する方法としては、例えば塗工膜(P)が形成された金属基板(X)を、金属原子(B)を含有する液に浸漬する方法、化学蒸着(CVD)法又は原子層堆積(ALD)法により、金属基板(X)に形成された塗工膜(P)の表面に金属原子(B)を付着させる方法などが挙げられる。 Examples of the method for forming the metal-containing layer (Y) include a method of immersing a metal substrate (X) on which a coating film (P) is formed in a liquid containing a metal atom (B), chemical vapor deposition (CVD). Examples thereof include a method of adhering a metal atom (B) to the surface of a coating film (P) formed on a metal substrate (X) by a method or an atomic layer deposition (ALD) method.

上記浸漬する方法において、用いる金属原子(B)を含有する液としては、例えば硫酸銅、塩化コバルト等の金属塩の水溶液などが挙げられる。この金属塩の水溶液における金属塩の濃度としては、例えば0.01モル/L以上3モル/L以下であり、0.1モル/L以上1モル/L以下が好ましい。上記浸漬の時間としては、例えば1分以上1日以下であり、1時間以上100時間以下が好ましい。 Examples of the liquid containing the metal atom (B) used in the above dipping method include an aqueous solution of a metal salt such as copper sulfate and cobalt chloride. The concentration of the metal salt in the aqueous solution of the metal salt is, for example, 0.01 mol / L or more and 3 mol / L or less, preferably 0.1 mol / L or more and 1 mol / L or less. The immersion time is, for example, 1 minute or more and 1 day or less, preferably 1 hour or more and 100 hours or less.

上記浸漬後に、塗工膜(P)中の官能基(M)に化学結合していない金属原子(B)を、超純水等を用いて洗浄し除去することが好ましい。 After the immersion, it is preferable to wash and remove the metal atom (B) that is not chemically bonded to the functional group (M) in the coating film (P) with ultrapure water or the like.

CVD法としては、熱CVD、プラズマCVD、光CVD、減圧CVD、レーザCVD有機金属CVD(MOCVD)等の種々の方法が挙げられる。
ALD法としては、熱ALD法、プラズマALD法等が挙げられる。
Examples of the CVD method include various methods such as thermal CVD, plasma CVD, optical CVD, reduced pressure CVD, and laser CVD organic metal CVD (MOCVD).
Examples of the ALD method include a thermal ALD method and a plasma ALD method.

形成される金属含有層(Y)の平均厚みの下限としては、0.1nmが好ましく、1nmがより好ましく、2nmがさらに好ましい。上記平均厚みの上限としては、500nmが好ましく、100nmがより好ましく、50nmがさらに好ましい。 The lower limit of the average thickness of the formed metal-containing layer (Y) is preferably 0.1 nm, more preferably 1 nm, and even more preferably 2 nm. The upper limit of the average thickness is preferably 500 nm, more preferably 100 nm, and even more preferably 50 nm.

金属含有層(Y)が含む金属原子(B)としては、金属基板(X)が含む金属原子(A)と異なることが好ましい。金属原子(B)と金属原子(A)とを異なるものとすると、より効果的に金属含有層(Y)を形成することができる。 The metal atom (B) contained in the metal-containing layer (Y) is preferably different from the metal atom (A) contained in the metal substrate (X). When the metal atom (B) and the metal atom (A) are different from each other, the metal-containing layer (Y) can be formed more effectively.

また、金属基板(X)が金属原子(A)を含み、金属含有層(Y)が金属原子(A)とは異なる金属原子(B)を含む場合、[A]重合体の末端構造(I)が金属原子(A)と化学結合可能な官能基を有し、末端構造(II)が金属原子(B)と化学結合可能な官能基を有することが好ましい。金属基板(X)、金属含有層(Y)及び[A]重合体の構造を上記組み合わせとすると、金属基板(X)の表面に金属含有層(Y)をより容易に形成することができる。 When the metal substrate (X) contains a metal atom (A) and the metal-containing layer (Y) contains a metal atom (B) different from the metal atom (A), the terminal structure (I) of the [A] polymer ) Has a functional group capable of chemically bonding with the metal atom (A), and the terminal structure (II) preferably has a functional group capable of chemically bonding with the metal atom (B). When the structures of the metal substrate (X), the metal-containing layer (Y), and the polymer [A] are combined as described above, the metal-containing layer (Y) can be more easily formed on the surface of the metal substrate (X).

この場合、金属原子(A)と化学結合可能な官能基としては、リン酸基が好ましい。また、金属原子(B)と化学結合可能な官能基としては、ニトリル基、カルボキシ基、エステル基及びヒドロキシ基からなる群より選ばれる少なくとも1種が好ましい。官能基(M)を上記のものとすると、各官能基(M)と金属原子との結合力の大小に起因して、金属基板(X)の表面の金属含有層(Y)の形成をより効果的に行うことができる。 In this case, a phosphoric acid group is preferable as the functional group capable of chemically bonding with the metal atom (A). Further, as the functional group capable of chemically bonding with the metal atom (B), at least one selected from the group consisting of a nitrile group, a carboxy group, an ester group and a hydroxy group is preferable. Assuming that the functional group (M) is as described above, the formation of the metal-containing layer (Y) on the surface of the metal substrate (X) is more likely to occur due to the magnitude of the bonding force between each functional group (M) and the metal atom. It can be done effectively.

当該金属基板の製造方法によれば、金属基板(X)の表面に金属含有層(Y)を容易に形成することができる。当該金属基板の製造方法において、金属基板(X)として、コバルト、銅等の金属の基板の表面にポリシロキサン等のパターンを形成させたトレンチを有する基板を用いることにより、トレンチの底部の金属の表面に金属含有層(Y)を形成させることができる。このようなトレンチの底部に金属含有層(Y)が形成された基板によれば、めっき処理を行う際のめっき層の成長が促進されると考えられる。 According to the method for manufacturing the metal substrate, the metal-containing layer (Y) can be easily formed on the surface of the metal substrate (X). In the method for manufacturing the metal substrate, by using a substrate having a trench in which a pattern such as polysiloxane is formed on the surface of a metal substrate such as cobalt or copper as the metal substrate (X), the metal at the bottom of the trench is formed. A metal-containing layer (Y) can be formed on the surface. According to the substrate on which the metal-containing layer (Y) is formed at the bottom of such a trench, it is considered that the growth of the plating layer during the plating treatment is promoted.

以下、本発明を実施例に基づいて具体的に説明するが、本発明はこれらの実施例に限定されるものではない。各物性値の測定方法を下記に示す。 Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to these examples. The measurement method of each physical property value is shown below.

[Mw及びMn]
重合体のMw及びMnは、ゲルパーミエーションクロマトグラフィー(GPC)により東ソー社のGPCカラム(「G2000HXL」2本、「G3000HXL」1本及び「G4000HXL」1本)を使用し、以下の条件により測定した。
溶離液:テトラヒドロフラン(和光純薬工業社)
流量:1.0mL/分
試料濃度:1.0質量%
試料注入量:100μL
カラム温度:40℃
検出器:示差屈折計
標準物質:単分散ポリスチレン
[Mw and Mn]
Mw and Mn of the polymer are measured by gel permeation chromatography (GPC) using Tosoh's GPC columns (2 "G2000HXL", 1 "G3000HXL" and 1 "G4000HXL") under the following conditions. bottom.
Eluent: Tetrahydrofuran (Wako Pure Chemical Industries, Ltd.)
Flow rate: 1.0 mL / min Sample concentration: 1.0 mass%
Sample injection volume: 100 μL
Column temperature: 40 ° C
Detector: Differential refractometer Standard material: Monodisperse polystyrene

13C−NMR分析]
13C−NMR分析は、核磁気共鳴装置(日本電子社の「JNM−EX400」)を使用し、測定溶媒としてDMSO−dを用いて行った。重合体における各構造単位の含有割合は、13C−NMRで得られたスペクトルにおける各構造単位に対応するピークの面積比から算出した。
[ 13 C-NMR analysis]
13 C-NMR analysis was performed using a nuclear magnetic resonance apparatus (“JNM-EX400” manufactured by JEOL Ltd.) and DMSO-d 6 as a measurement solvent. The content ratio of each structural unit in the polymer was calculated from the area ratio of the peak corresponding to each structural unit in the spectrum obtained by 13 C-NMR.

<[A]重合体の合成>
[合成例1]
200mLの3口フラスコ反応容器へ、アゾビスイソブチロニトリル(AIBN)0.098g、スチレン10.63g、2−シアノ−2−プロピルドデシルトリチオカーボナート0.83g及びアニソール20gを加え、窒素雰囲気下、80℃で5時間加熱撹拌した。次に、ビニルリン酸0.68g及びプロピレングリコールモノメチルエーテル1.0gを加え、80℃で3時間加熱撹拌した。この重合反応液をメタノール300gへ投入して沈殿精製し、得られた黄色の粘性物を回収し、プロピレングリコールモノメチルエーテルアセテート20gへ溶解させ、AIBN0.49g及びtert−ドデカンチオール2.03gを加え、80℃で2時間撹拌し、トリチオカーボナート末端の切り離し反応を行った。得られた重合反応液を減圧濃縮し、得られた濃縮物をメタノール1,000gへ投入して沈殿精製し、薄黄色の固体を得た。次いで、この固体を60℃で減圧乾燥させることで重合体(A−1)10.5gを得た。この重合体(A−1)は、Mwが5,600、Mnが4,800、Mw/Mnが1.17であった。
<[A] Synthesis of polymer>
[Synthesis Example 1]
Add 0.098 g of azobisisobutyronitrile (AIBN), 10.63 g of styrene, 0.83 g of 2-cyano-2-propyldodecyltrithiocarbonate and 20 g of anisole to a 200 mL three-necked flask reaction vessel, and add a nitrogen atmosphere. Below, the mixture was heated and stirred at 80 ° C. for 5 hours. Next, 0.68 g of vinyl phosphate and 1.0 g of propylene glycol monomethyl ether were added, and the mixture was heated and stirred at 80 ° C. for 3 hours. This polymerization reaction solution was added to 300 g of methanol for precipitation purification, the obtained yellow viscous substance was recovered, dissolved in 20 g of propylene glycol monomethyl ether acetate, 0.49 g of AIBN and 2.03 g of tert-dodecanethiol were added, and the mixture was added. The mixture was stirred at 80 ° C. for 2 hours to carry out a cleavage reaction at the end of trithiocarbonate. The obtained polymerization reaction solution was concentrated under reduced pressure, and the obtained concentrate was added to 1,000 g of methanol for precipitation purification to obtain a pale yellow solid. Then, this solid was dried under reduced pressure at 60 ° C. to obtain 10.5 g of the polymer (A-1). This polymer (A-1) had Mw of 5,600, Mn of 4,800, and Mw / Mn of 1.17.

[合成例2]
200mLの3口フラスコ反応容器へ、AIBN0.098g、2−シアノ−2−プロピルドデシルトリチオカーボナート0.83g、tert−ブチルスチレン17.6g、4−ビニルベンゾシクロブテン0.78g及びアニソール20gを加え、窒素雰囲気下、80℃で5時間加熱撹拌した。次に、ビニルリン酸0.68g及びプロピレングリコールモノメチルエーテル1.0gを加え、80℃で3時間加熱撹拌した。この重合反応液をメタノール300gへ投入して沈殿精製し、得られた黄色の粘性物を回収し、プロピレングリコールモンメチルエーテルアセテート20gへ溶解させ、AIBN0.49g及びtert−ドデカンチオール2.03gを加え、80℃で2時間撹拌し、トリチオカーボナート末端の切り離し反応を行った。得られた重合反応液を、減圧濃縮し、得られた濃縮物をメタノール1,000gへ投入して沈殿精製し、薄黄色の固体を得た。次いで、この固体を60℃で減圧乾燥させることで重合体(A−2)14.6gを得た。この重合体(A−2)は、Mwが6,300、Mnが4,900、Mw/Mnが1.29であった。
[Synthesis Example 2]
In a 200 mL three-necked reaction vessel, 0.098 g of AIBN, 0.83 g of 2-cyano-2-propyldodecyltrithiocarbonate, 17.6 g of tert-butylstyrene, 0.78 g of 4-vinylbenzocyclobutene and 20 g of anisole were added. In addition, the mixture was heated and stirred at 80 ° C. for 5 hours in a nitrogen atmosphere. Next, 0.68 g of vinyl phosphate and 1.0 g of propylene glycol monomethyl ether were added, and the mixture was heated and stirred at 80 ° C. for 3 hours. This polymerization reaction solution was added to 300 g of methanol for precipitation and purification, the obtained yellow viscous substance was recovered, dissolved in 20 g of propylene glycol monmethyl ether acetate, and 0.49 g of AIBN and 2.03 g of tert-dodecanethiol were added. , The mixture was stirred at 80 ° C. for 2 hours to carry out a reaction for separating the ends of trithiocarbonate. The obtained polymerization reaction solution was concentrated under reduced pressure, and the obtained concentrate was added to 1,000 g of methanol for precipitation purification to obtain a pale yellow solid. Then, this solid was dried under reduced pressure at 60 ° C. to obtain 14.6 g of the polymer (A-2). This polymer (A-2) had Mw of 6,300, Mn of 4,900, and Mw / Mn of 1.29.

[合成例3]
500mLのフラスコ反応容器を減圧乾燥した後、窒素雰囲気下、蒸留脱水処理を行ったテトラヒドロフラン(THF)120g及び0.5N塩化リチウムTHF溶液9.2mLを注入し、−78℃まで冷却した。次に、このTHF溶液にsec−ブチルリチウム(sec−BuLi)の1Nシクロヘキサン溶液2.38mLを注入し、次いで、重合禁止剤除去のためシリカゲルによる吸着濾別と蒸留脱水処理とを行ったスチレン13.3mLを30分かけて滴下注入し、重合系が橙色であることを確認した。この滴下注入のとき、反応溶液の内温が−60℃以上にならないように注意した。滴下終了後に30分間熟成した。この後、3−ブロモプロピオニトリル0.19mLを注入し、重合末端の停止反応を行った。この反応溶液を室温まで昇温し、得られた反応溶液を濃縮してメチルイソブチルケトン(MIBK)で置換した。その後、シュウ酸2質量%水溶液1,000gを注入撹拌し、静置後、下層の水層を取り除いた。この操作を3回繰り返し、Li塩を除去した。その後、超純水1,000gを注入撹拌し、下層の水層を取り除いた。この操作を3回繰り返し、シュウ酸を除去した後、溶液を濃縮してメタノール500g中に滴下することで重合体を析出させ、ブフナーロートにて固体を回収した。この固体を60℃で減圧乾燥させることで白色の重合体(A−3)11.9gを得た。この重合体(A−3)は、Mwが5,600、Mnが5,200、Mw/Mnが1.08であった。
[Synthesis Example 3]
After drying the 500 mL flask reaction vessel under reduced pressure, 120 g of tetrahydrofuran (THF) subjected to distillation dehydration treatment and 9.2 mL of a 0.5 N lithium chloride THF solution were injected under a nitrogen atmosphere, and the mixture was cooled to −78 ° C. Next, 2.38 mL of a 1N cyclohexane solution of sec-butyllithium (sec-BuLi) was injected into this THF solution, and then adsorption filtration with silica gel and distillation dehydration treatment were performed to remove the polymerization inhibitor. .3 mL was added dropwise over 30 minutes, and it was confirmed that the polymerization system was orange. At the time of this dropping injection, care was taken so that the internal temperature of the reaction solution did not exceed -60 ° C. It was aged for 30 minutes after the completion of the dropping. After that, 0.19 mL of 3-bromopropionitrile was injected to carry out a termination reaction at the polymerization terminal. The reaction solution was heated to room temperature, and the obtained reaction solution was concentrated and replaced with methyl isobutyl ketone (MIBK). Then, 1,000 g of a 2% by mass aqueous solution of oxalic acid was injected and stirred, allowed to stand, and then the lower aqueous layer was removed. This operation was repeated 3 times to remove the Li salt. Then, 1,000 g of ultrapure water was injected and stirred to remove the lower aqueous layer. This operation was repeated 3 times to remove oxalic acid, then the solution was concentrated and added dropwise to 500 g of methanol to precipitate a polymer, and the solid was recovered with a Buchner funnel. This solid was dried under reduced pressure at 60 ° C. to obtain 11.9 g of a white polymer (A-3). This polymer (A-3) had Mw of 5,600, Mn of 5,200, and Mw / Mn of 1.08.

<組成物(S)の調製>
[調製例1]
[A]重合体としての(A−1)1.20gに、[B]溶媒としてのプロピレングリコールモノメチルエーテルアセテート(PGMEA)98.80gを加え、撹拌したのち、0.45μmの細孔を有する高密度ポリエチレンフィルターにて濾過することにより、組成物(S−1)を調製した。
<Preparation of composition (S)>
[Preparation Example 1]
To 1.20 g of (A-1) as a polymer of [A], 98.80 g of propylene glycol monomethyl ether acetate (PGMEA) as a solvent of [B] was added, and after stirring, a high density having 0.45 μm pores was added. The composition (S-1) was prepared by filtering with a density polyethylene filter.

[調製例2及び比較調製例1]
下記表1に示す種類及び配合量の各成分を用いた以外は、上記調製例1と同様にして組成物(S−2)及び(S−3)を調製した。
[Preparation Example 2 and Comparative Preparation Example 1]
The compositions (S-2) and (S-3) were prepared in the same manner as in Preparation Example 1 above, except that each component of the type and the blending amount shown in Table 1 below was used.

Figure 2020071339
Figure 2020071339

<基板の製造>
[実施例1及び2並びに比較例1]
[組成物の塗工]
8インチコバルト基板をシュウ酸5質量%水溶液に浸漬させたのち、窒素フローにて乾燥させ、表面の酸化被膜を除去した。また、銅基板について同様な処理を行った。シリコンオキサイド(SiO)基板については、イソプロパノールにて表面処理を行った。
次に、トラック(東京エレクトロン社の「TELDSA ACT8」)を用いて、下記表2に示す組成物(S)を1,500rpmにてスピンコートし、100℃で180秒間焼成した。
<Manufacturing of substrate>
[Examples 1 and 2 and Comparative Example 1]
[Coating of composition]
The 8-inch cobalt substrate was immersed in a 5% by mass aqueous solution of oxalic acid and then dried by a nitrogen flow to remove an oxide film on the surface. Further, the same treatment was performed on the copper substrate. The silicon oxide (SiO 2 ) substrate was surface-treated with isopropanol.
Next, using a truck (“TELDSA ACT8” manufactured by Tokyo Electron Limited), the composition (S) shown in Table 2 below was spin-coated at 1,500 rpm and baked at 100 ° C. for 180 seconds.

得られた組成物(S)を塗工した基板の表面の水の接触角値を、接触角計(協和界面化学社の「Drop master DM−501」)を用いて測定した。接触角の測定値を下記表2に示す。 The contact angle value of water on the surface of the substrate coated with the obtained composition (S) was measured using a contact angle meter (“Drop master DM-501” manufactured by Kyowa Surface Chemistry Co., Ltd.). The measured values of the contact angle are shown in Table 2 below.

Figure 2020071339
Figure 2020071339

[組成物の塗工及び金属含有層の形成]
[実施例1及び2並びに比較例1]
コバルト基板及び銅基板を3cm×3cmのクーポン状に裁断し、それぞれの基板の表面に下記表3及び表4に示す組成物(S)を1,500rpmにてスピンコートし、100℃で180秒間焼成した。次いで、金属基板の表面と化学結合していない[A]重合体をPGMEAにて除去し、窒素ブローにて乾燥させた。
次に、得られたコバルト基板を1Mの硫酸銅水溶液に、得られた銅基板を1M塩化コバルト水溶液に、各金属塩水溶液20gを入れたシャーレ中で72時間浸漬した後、[A]重合体と化学結合していない硫酸銅又は塩化コバルトを超純水にて除去し、窒素ブローにて乾燥させた。
[Coating of composition and formation of metal-containing layer]
[Examples 1 and 2 and Comparative Example 1]
A cobalt substrate and a copper substrate are cut into a coupon shape of 3 cm × 3 cm, and the composition (S) shown in Tables 3 and 4 below is spin-coated on the surface of each substrate at 1,500 rpm and at 100 ° C. for 180 seconds. It was fired. Next, the [A] polymer that was not chemically bonded to the surface of the metal substrate was removed by PGMEA and dried by nitrogen blowing.
Next, the obtained cobalt substrate was immersed in a 1 M copper sulfate aqueous solution and the obtained copper substrate in a 1 M cobalt chloride aqueous solution for 72 hours in a chalet containing 20 g of each metal salt aqueous solution, and then the [A] polymer was used. Copper sulfate or cobalt chloride which was not chemically bonded to the above was removed with ultrapure water and dried with a nitrogen blow.

得られたそれぞれの基板の表面を、走査型X線光電子分光装置(ULVAC−PHI社の「Quantum2000」)(測定条件:100μmφ)にて解析し、各元素の定性及び定量を行った。評価結果について表3及び表4に合わせて示す。ESCA(XPS)表面データにおける「others」には、bareSi、thermal oxide、TiN、Co多層上のTi、N、Si等が含まれる。 The surface of each of the obtained substrates was analyzed by a scanning X-ray photoelectron spectrometer (“Quantum2000” manufactured by ULVAC-PHI) (measurement conditions: 100 μmφ), and the qualitative and quantification of each element was performed. The evaluation results are shown in Tables 3 and 4. The "others" in the ESCA (XPS) surface data include baresi, thermal oxide, TiN, Ti, N, Si and the like on the Co multilayer.

Figure 2020071339
Figure 2020071339

Figure 2020071339
Figure 2020071339

表3の結果から、コバルト基板へ組成物(S)を施し、1M硫酸銅水溶液へ浸漬・吸着したものからはCu成分が検出されたことが分かる、また、表4の結果から、銅基板へ組成物(S)を施し、1M塩化コバルト水溶液へ浸漬・吸着したものからはCo成分が検出されたことが分かる。このように、実施例の基板の製造方法によれば、金属基板の表面に金属含有層が形成された基板を簡便に製造することができる。 From the results in Table 3, it can be seen that the Cu component was detected in the cobalt substrate obtained by applying the composition (S) to the cobalt substrate and immersing and adsorbing it in a 1 M copper sulfate aqueous solution. It can be seen that the Co component was detected in the mixture obtained by applying the composition (S) and immersing and adsorbing it in a 1 M aqueous cobalt chloride solution. As described above, according to the method for manufacturing a substrate of the example, it is possible to easily manufacture a substrate in which a metal-containing layer is formed on the surface of the metal substrate.

本発明の基板の製造方法によれば、金属基板の表面に金属含有層が形成された基板を簡便に製造することができる。本発明の組成物は、当該基板の製造方法に好適に用いることができる。本発明の重合体は、当該組成物の重合体成分として好適に用いることができる。従って、これらは、今後ますます微細化が進行すると予想される半導体デバイスの加工プロセス等に好適に用いることができる。 According to the method for manufacturing a substrate of the present invention, it is possible to easily manufacture a substrate having a metal-containing layer formed on the surface of the metal substrate. The composition of the present invention can be suitably used in the method for producing the substrate. The polymer of the present invention can be suitably used as a polymer component of the composition. Therefore, these can be suitably used for processing processes of semiconductor devices, which are expected to be further miniaturized in the future.

Claims (9)

金属基板上に組成物を塗工する工程と、
上記塗工工程により形成された塗工膜上の少なくとも一部に金属含有層を形成する工程と
を備える基板の製造方法であって、
上記組成物が、同一分子上に第1末端構造及び第2末端構造を有する重合体と、溶媒とを含有し、
上記第1末端構造及び第2末端構造が、それぞれ下記式(1)で表される構造及び下記式(2)で表される構造からなる群より選ばれる少なくとも1種であることを特徴とする基板の製造方法。
Figure 2020071339
(式(1)中、Lは、炭素数1〜20の3価の基である。Aは、金属原子と化学結合可能な官能基を含む1価の基である。Xは、水素原子、炭素数1〜20の1価の有機基、−SH又は−S−A11である。A11は、金属原子と化学結合可能な官能基を含む1価の基である。nは、(−L(−A)−)で表されるブロックを構成する構造単位の数を示し、2以上の整数である。複数のAは同一でも異なっていてもよい。A及びA11は同一でも異なっていてもよい。*は、上記重合体における上記式(1)で表される構造以外の部分に結合する部位を示す。
式(2)中、Lは、−S−、−NR−又は−NA22−である。A及びA22は、それぞれ独立して、金属原子と化学結合可能な官能基を含む1価の基である。Rは、水素原子又は炭素数1〜20の1価の炭化水素基である。mは、0又は1である。*は、上記重合体における上記式(2)で表される構造以外の部分に結合する部位を示す。)
The process of applying the composition on a metal substrate and
A method for manufacturing a substrate, which comprises a step of forming a metal-containing layer on at least a part of a coating film formed by the coating step.
The composition contains a polymer having a first-terminal structure and a second-terminal structure on the same molecule, and a solvent.
The first terminal structure and the second terminal structure are at least one selected from the group consisting of the structure represented by the following formula (1) and the structure represented by the following formula (2), respectively. Substrate manufacturing method.
Figure 2020071339
(In the formula (1), L 1 is a trivalent group having 1 to 20 carbon atoms. A 1 is a monovalent group containing a functional group that can be chemically bonded to a metal atom. X is hydrogen. atom, a monovalent organic group having 1 to 20 carbon atoms, .A 11 is -SH or -S-a 11 is a monovalent group containing a metal atom capable of chemically bonding functional groups .n is (-L 1 (-A 1) - ). represented by n indicates the number of the structural units constituting the block, which is an integer of 2 or more the plurality of a 1 good .A 1 and be the same or different A 11 may be the same or different. * Indicates a site of the polymer that binds to a portion other than the structure represented by the above formula (1).
Wherein (2), L 2 is, -S -, - NR- or -NA 22 - a. A 2 and A 22 are monovalent groups each independently containing a functional group capable of chemically bonding with a metal atom. R is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. m is 0 or 1. * Indicates a site that binds to a portion of the polymer other than the structure represented by the above formula (2). )
上記重合体における第1末端構造中の金属原子と化学結合可能な上記官能基と、第2末端構造中の金属原子と化学結合可能な上記官能基とが互いに異なる請求項1に記載の基板の製造方法。 The substrate according to claim 1, wherein the functional group chemically bonded to the metal atom in the first terminal structure of the polymer and the functional group chemically bonded to the metal atom in the second terminal structure are different from each other. Production method. 上記重合体における第1末端構造が上記式(1)で表される構造であり、第2末端構造が上記式(2)で表される構造である請求項1又は請求項2に記載の基板の製造方法。 The substrate according to claim 1 or 2, wherein the first terminal structure in the polymer is a structure represented by the above formula (1), and the second terminal structure is a structure represented by the above formula (2). Manufacturing method. 上記式(1)におけるAがリン酸基であり、上記式(2)におけるAがニトリル基、カルボキシ基、エステル基及びヒドロキシ基からなる群より選ばれる少なくとも1種である請求項1、請求項2又は請求項3に記載の基板の製造方法。 Claim 1, in which A 1 in the above formula (1) is a phosphoric acid group, and A 2 in the above formula (2) is at least one selected from the group consisting of a nitrile group, a carboxy group, an ester group and a hydroxy group. The method for manufacturing a substrate according to claim 2 or 3. 上記重合体が、炭化水素基置換又は非置換のスチレンに由来する構造単位を有する請求項1から請求項4のいずれか1項に記載の基板の製造方法。 The method for producing a substrate according to any one of claims 1 to 4, wherein the polymer has a structural unit derived from hydrocarbon group-substituted or unsubstituted styrene. 上記金属基板が第1金属原子を含み、上記金属含有層が上記第1金属原子とは異なる第2金属原子を含んでおり、
上記重合体における第1末端構造の上記官能基が上記第1金属原子と化学結合可能なものであり、第2末端構造の上記官能基が上記第2金属原子と化学結合可能なものである請求項1から請求項5のいずれか1項に記載の基板の製造方法。
The metal substrate contains a first metal atom, and the metal-containing layer contains a second metal atom different from the first metal atom.
A claim that the functional group of the first terminal structure in the polymer can be chemically bonded to the first metal atom, and the functional group of the second terminal structure can be chemically bonded to the second metal atom. The method for manufacturing a substrate according to any one of claims 1 to 5.
上記第1末端構造の官能基がリン酸基であり、上記第2末端構造の上記官能基がニトリル基、カルボキシ基、エステル基及びヒドロキシ基からなる群より選ばれる少なくとも1種である請求項6に記載の基板の製造方法。 6. The functional group of the first terminal structure is a phosphoric acid group, and the functional group of the second terminal structure is at least one selected from the group consisting of a nitrile group, a carboxy group, an ester group and a hydroxy group. The method for manufacturing a substrate according to. 金属基板とこの金属基板上に形成された金属含有層とを備える基板の製造方法に用いられる組成物であって、
同一分子上に第1末端構造及び第2末端構造を有する重合体と、溶媒とを含有し、
上記第1末端構造及び第2末端構造が、それぞれ下記式(1)で表される構造及び下記式(2)で表される構造からなる群より選ばれる少なくとも1種であることを特徴とする組成物。
Figure 2020071339
(式(1)中、Lは、炭素数1〜20の3価の基である。Aは、金属原子と化学結合可能な官能基を含む1価の基である。Xは、水素原子、炭素数1〜20の1価の有機基、−SH又は−S−A11である。A11は、金属原子と化学結合可能な官能基を含む1価の基である。nは、(−L(−A)−)で表されるブロックを構成する構造単位の数を示し、2以上の整数である。複数のAは同一でも異なっていてもよい。A及びA11は同一でも異なっていてもよい。*は、上記重合体における上記式(1)で表される構造以外の部分に結合する部位を示す。
式(2)中、Lは、−S−、−NR−又は−NA22−である。A及びA22は、それぞれ独立して、金属原子と化学結合可能な官能基を含む1価の基である。Rは、水素原子又は炭素数1〜20の1価の炭化水素基である。mは、0又は1である。*は、上記重合体における上記式(2)で表される構造以外の部分に結合する部位を示す。)
A composition used in a method for manufacturing a substrate including a metal substrate and a metal-containing layer formed on the metal substrate.
A polymer having a first-terminal structure and a second-terminal structure on the same molecule and a solvent are contained.
The first terminal structure and the second terminal structure are at least one selected from the group consisting of the structure represented by the following formula (1) and the structure represented by the following formula (2), respectively. Composition.
Figure 2020071339
(In the formula (1), L 1 is a trivalent group having 1 to 20 carbon atoms. A 1 is a monovalent group containing a functional group that can be chemically bonded to a metal atom. X is hydrogen. atom, a monovalent organic group having 1 to 20 carbon atoms, .A 11 is -SH or -S-a 11 is a monovalent group containing a metal atom capable of chemically bonding functional groups .n is (-L 1 (-A 1) - ). represented by n indicates the number of the structural units constituting the block, which is an integer of 2 or more the plurality of a 1 good .A 1 and be the same or different A 11 may be the same or different. * Indicates a site of the polymer that binds to a portion other than the structure represented by the above formula (1).
Wherein (2), L 2 is, -S -, - NR- or -NA 22 - a. A 2 and A 22 are monovalent groups each independently containing a functional group capable of chemically bonding with a metal atom. R is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. m is 0 or 1. * Indicates a site that binds to a portion of the polymer other than the structure represented by the above formula (2). )
同一分子上に第1末端構造及び第2末端構造を有し、上記第1末端構造及び第2末端構造がそれぞれ下記式(1)で表される構造及び下記式(2)で表される構造からなる群より選ばれる少なくとも1種である重合体。
Figure 2020071339
(式(1)中、Lは、炭素数1〜20の3価の基である。Aは、金属原子と化学結合可能な官能基を含む1価の基である。Xは、水素原子、炭素数1〜20の1価の有機基、−SH又は−S−A11である。A11は、金属原子と化学結合可能な官能基を含む1価の基である。nは、(−L(−A)−)で表されるブロックを構成する構造単位の数を示し、2以上の整数である。複数のAは同一でも異なっていてもよい。A及びA11は同一でも異なっていてもよい。*は、上記重合体における上記式(1)で表される構造以外の部分に結合する部位を示す。
式(2)中、Lは、−S−、−NR−又は−NA22−である。A及びA22は、それぞれ独立して、金属原子と化学結合可能な官能基を含む1価の基である。Rは、水素原子又は炭素数1〜20の1価の炭化水素基である。mは、0又は1である。*は、上記重合体における上記式(2)で表される構造以外の部分に結合する部位を示す。)
It has a first terminal structure and a second terminal structure on the same molecule, and the first terminal structure and the second terminal structure are represented by the following formula (1) and the following formula (2), respectively. A polymer that is at least one selected from the group consisting of.
Figure 2020071339
(In the formula (1), L 1 is a trivalent group having 1 to 20 carbon atoms. A 1 is a monovalent group containing a functional group that can be chemically bonded to a metal atom. X is hydrogen. atom, a monovalent organic group having 1 to 20 carbon atoms, .A 11 is -SH or -S-a 11 is a monovalent group containing a metal atom capable of chemically bonding functional groups .n is (-L 1 (-A 1) - ). represented by n indicates the number of the structural units constituting the block, which is an integer of 2 or more the plurality of a 1 good .A 1 and be the same or different A 11 may be the same or different. * Indicates a site of the polymer that binds to a portion other than the structure represented by the above formula (1).
Wherein (2), L 2 is, -S -, - NR- or -NA 22 - a. A 2 and A 22 are monovalent groups each independently containing a functional group capable of chemically bonding with a metal atom. R is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms. m is 0 or 1. * Indicates a site that binds to a portion of the polymer other than the structure represented by the above formula (2). )
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008104909A (en) * 2006-10-23 2008-05-08 Fujifilm Corp Manufacturing method of base board with metallic film, base board with metallic film, manufacturing method of metallic pattern material, and metallic pattern material
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WO2012046615A1 (en) * 2010-10-08 2012-04-12 富士フイルム株式会社 Laminate production process
JP2012144761A (en) * 2011-01-07 2012-08-02 Fujifilm Corp Composition for forming layer to be plated, and process for producing laminate having metal film

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* Cited by examiner, † Cited by third party
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WO2012046615A1 (en) * 2010-10-08 2012-04-12 富士フイルム株式会社 Laminate production process
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