JPWO2020059070A1 - Substrate processing equipment, semiconductor equipment manufacturing methods and programs - Google Patents

Abstract

A configuration including a main control unit that executes a process recipe including at least a procedure for supplying gas and a procedure for purging gas to process a substrate, and a control unit that collects device data transmitted from the main control unit. Therefore, during the execution of the process recipe, the control unit collects the pipe temperature and the pipe pressure for the part to be monitored in the pipe that becomes the gas flow path in the device data, and determines the pipe temperature or the pipe pressure. When any of the values changes, the saturation temperature with respect to the pipe pressure is calculated, the difference between the saturation temperature and the pipe temperature is calculated as an outlier, and the liquefaction region of the vapor pressure curve determined according to the gas raw material. The main control unit extracts the deviation values corresponding to the above, and determines the number of deviations corresponding to the liquefaction region of the vapor pressure curve and the maximum deviation value which is the maximum value of the deviation values within a predetermined period. It is configured to output to.

Description

The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor apparatus, and a program.

As a substrate processing device used in the manufacturing process of a semiconductor device, there is a substrate processing device that performs a predetermined process such as a film forming process on a substrate such as a semiconductor wafer by using a raw material gas obtained by vaporizing a liquid raw material. For example, Patent Document 1 describes a device for vaporizing a raw material by providing a piping heater between a vaporizer (tank) and a processing chamber (or a processing furnace). Further, for example, Patent Document 2 describes an apparatus for vaporizing a raw material by providing a mist filter between a vaporizer (tank) and a processing chamber (or a processing furnace).

Japanese Unexamined Patent Publication No. 2017-076781 Japanese Unexamined Patent Publication No. 2013-232624

When the gas vaporized as described above is used, in the pipe portion that becomes the flow path of the gas, for example, when the inside of the pipe is in a pressurized state, the vapor pressure curve shifts to the liquefied state side according to the raw material of the gas. There is a possibility that the vaporized gas will be reliquefied. If the vaporized gas is liquefied again in this way, there is a risk of causing troubles such as film formation abnormality due to particle generation and equipment stoppage.

An object of the present disclosure is to provide a technique for quickly and accurately detecting gas liquefaction in a pipe and avoiding troubles caused by gas liquefaction.

According to one aspect of the present disclosure
A configuration including a main control unit that executes a process recipe including at least a procedure for supplying gas and a procedure for purging gas to process a substrate, and a control unit that collects device data transmitted from the main control unit. Therefore, during the execution of the process recipe, the control unit collects the pipe temperature and the pipe pressure for the part to be monitored in the pipe that becomes the gas flow path in the device data, and determines the pipe temperature or the pipe pressure. When any of the values changes, the saturation temperature with respect to the pipe pressure is calculated, the difference between the saturation temperature and the pipe temperature is calculated as an outlier, and the liquefaction region of the vapor pressure curve determined according to the gas raw material. The main control unit extracts the deviation values corresponding to the above, and determines the number of deviations corresponding to the liquefaction region of the vapor pressure curve and the maximum deviation value which is the maximum value of the deviation values within a predetermined period. Is configured to output to,
Technology is provided.

According to the technique according to the present disclosure, it is possible to quickly and accurately detect the liquefaction of gas in the pipe and avoid the occurrence of troubles due to the liquefaction of gas.

It is a perspective view which shows the substrate processing apparatus preferably used for one Embodiment. It is a side sectional view which shows the substrate processing apparatus preferably used for one Embodiment. It is a figure which shows the functional structure of the control system preferably used for one Embodiment. It is a figure which shows the functional structure of the main controller preferably used for one Embodiment. It is a figure which shows the functional structure of the apparatus management controller preferably used for one Embodiment. It is a figure which shows the functional structure of the device condition monitoring part preferably used for one Embodiment. It is a figure which shows the functional structure of the substrate processing part (including the part to be monitored) preferably used for one Embodiment. It is a flowchart which shows the procedure of the soft sensor value calculation processing preferably used for one Embodiment. It is explanatory drawing which shows one specific example of the vapor pressure curve preferably used for one Embodiment. It is explanatory drawing which shows the Antoine constant management table and the condition setting table for each part to be monitored, which are preferably used for one Embodiment. It is explanatory drawing (the 1) which shows the action definition table preferably used for one Embodiment. It is explanatory drawing (the 2) which shows the action definition table preferably used for one Embodiment.

<One Embodiment>
Hereinafter, one embodiment of the present disclosure will be described with reference to FIGS. 1 to 12.

(1) Configuration of Substrate Processing Device First, a configuration example of the substrate processing device according to the embodiment will be described with reference to the drawings. However, in the following description, the same components may be designated by the same reference numerals and repeated description may be omitted. In addition, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited.

(Outline of board processing equipment)
As shown in FIGS. 1 and 2, the substrate processing apparatus (hereinafter, also simply referred to as an apparatus) 1 to which the present disclosure is applied includes a housing 2, and the lower portion of the front wall 3 of the housing 2 can be maintained. The opening 4 provided in the above manner is opened, and the opening 4 is opened and closed by the front maintenance door 5.

A pod carry-in / carry-out outlet 6 is provided on the front wall 3 of the housing 2 so as to communicate the inside and outside of the housing 2. A load port 8 is installed on the front side, and the load port 8 is configured to align the mounted pod 9. The pod 9 is a closed-type substrate transfer container, which is carried on the load port 8 by an in-process transfer device (not shown), and is also carried out from the load port 8.

A rotary pod shelf 11 is installed in the upper part of the housing 2 at a substantially central portion in the front-rear direction, and the rotary pod shelf 11 is configured to store a plurality of pods 9. .. The rotary pod shelf 11 includes a support column 12 that is vertically erected and intermittently rotated, and a plurality of stages of shelf boards 13 that are radially supported on the support column 12 at each position of the upper, middle, and lower stages. The shelf board 13 is configured to store a plurality of the pods 9 in a state of being placed on the shelves. A pod opener 14 is provided below the rotary pod shelf 11, and the pod opener 14 has a configuration in which the pod 9 is placed and the lid of the pod 9 can be opened and closed.

A pod transfer mechanism 15 is installed between the load port 8, the rotary pod shelf 11, and the pod opener 14, and the pod transfer mechanism 15 can hold the pod 9 and move up and down, and can move forward and backward in the horizontal direction. The pod 9 is transported between the load port 8, the rotary pod shelf 11, and the pod opener 14.

A sub-housing 16 is provided over the rear end in the lower portion of the housing 2 at a substantially central portion in the front-rear direction. On the front wall 17 of the sub-housing 16, a pair of wafer loading / unloading outlets 19 for loading / unloading wafers (hereinafter, also referred to as substrates) 18 into the sub-housing 16 are arranged vertically in two upper and lower stages. The pod openers 14 are provided for the upper and lower wafer loading / unloading outlets 19 respectively.

The pod opener 14 includes a mounting table 21 on which the pod 9 is placed, and an opening / closing mechanism 22 for opening and closing the lid of the pod 9. The pod opener 14 is configured to open and close the wafer inlet / outlet of the pod 9 by opening / closing the lid of the pod 9 placed on the mounting table 21 by the opening / closing mechanism 22.

The sub-housing 16 constitutes a transfer chamber 23 that is airtight from the space (pod transport space) in which the pod transport mechanism 15 and the rotary pod shelf 11 are arranged. A wafer transfer mechanism 24 is installed in the front region of the transfer chamber 23, and the substrate transfer mechanism 24 holds a required number of wafer transfer plates 25 (5 in the figure) on which the substrates 18 are mounted. The wafer mounting plate 25 is provided so that it can move linearly in the horizontal direction, rotate in the horizontal direction, and move up and down. The board transfer mechanism 24 is configured to load and unload the board 18 with respect to the boat 26.

In the rear region of the transfer chamber 23, a standby unit 27 for accommodating and waiting for the boat 26 is configured, and a vertical processing furnace 28 is provided above the standby unit 27. The processing furnace 28 forms a processing chamber (reaction chamber) 29 inside, and the lower end portion of the processing chamber 29 is a furnace mouth portion, and the furnace mouth portion is opened and closed by a furnace mouth shutter 31. ing.

A boat elevator 32 as an elevating mechanism for elevating and lowering the boat 26 is installed between the right end of the housing 2 and the right end of the standby portion 27 of the sub-housing 16. A seal cap 34 as a lid is horizontally attached to the arm 33 connected to the lift of the boat elevator 32, the lid 34 vertically supports the boat 26, and the boat 26 is supported by the processing chamber 29. It is possible to airtightly close the furnace mouth while it is charged in.

The boat 26 is configured so that a plurality of (for example, about 50 to 125) substrates 18 are aligned at the center thereof and held in a horizontal posture in multiple stages.

A clean unit 35 is arranged at a position facing the boat elevator 32 side, and the clean unit 35 is composed of a supply fan and a dustproof filter so as to supply a clean atmosphere or clean air 36 which is an inert gas. There is.

Next, the operation of the substrate processing device 1 will be described.
When the pod 9 is supplied to the load port 8, the pod carry-in / carry-out outlet 6 is opened by the front shutter 7. The pod 9 on the load port 8 is carried into the inside of the housing 2 by the pod transfer device 15 through the pod carry-in / carry-out port 6, and is placed on the designated shelf board 13 of the rotary pod shelf 11. After the pod 9 is temporarily stored in the rotary pod shelf 11, the pod 9 is transported from the shelf board 13 to one of the pod openers 14 by the pod transfer device 15 and transferred to the loading platform 21 or the load port. It is directly transferred from 8 to the mounting table 21.

At this time, the wafer loading / unloading outlet 19 is closed by the opening / closing mechanism 22, and the transfer chamber 23 is filled with clean air 36. Since the transfer chamber 23 is filled with nitrogen gas as clean air 36, the oxygen concentration in the transfer chamber 23 is lower than the oxygen concentration inside the housing 2.

The opening side end face of the pod 9 mounted on the mounting table 21 is pressed against the opening edge of the wafer loading / unloading outlet 19 on the front wall 17 of the sub-housing 16, and the lid is removed by the opening / closing mechanism 22. , The wafer doorway is opened.

When the pod 9 was opened by the pod opener 14, the substrate 18 was taken out from the pod 9 by the substrate transfer mechanism 24 and transferred to a notch alignment device (not shown), and the substrate 18 was aligned by the notch alignment device. After that, the board transfer mechanism 24 carries the board 18 into the standby unit 27 behind the transfer chamber 23, and loads (charges) the board 26 into the boat 26.

The board transfer mechanism 24 that has delivered the board 18 to the boat 26 returns to the pod 9 and loads the next board 18 into the boat 26. While the board transfer mechanism 24 in one (upper end or lower) pod opener 14 is loading the board 18 into the boat 26, the other (lower or upper) pod opener 14 is separated from the rotary pod shelf 11. The pod 9 is transported and transferred by the pod transfer device 15, and the opening work of the pod 9 by the other pod opener 14 is simultaneously carried out.

When a predetermined number of substrates 18 are loaded into the boat 26, the furnace opening portion of the processing furnace 28 closed by the furnace opening shutter 31 is opened by the furnace opening shutter 31. Subsequently, the boat 26 is lifted by the boat elevator 32 and carried (loaded) into the processing chamber 29.

After loading, the seal cap 34 airtightly closes the furnace opening. In the present embodiment, the processing chamber 29 has a purging step (pre-purging step) in which the treatment chamber 29 is replaced with the inert gas at this timing (after loading).

The processing chamber 29 is evacuated by a gas exhaust mechanism (not shown) such as a vacuum pump so that the desired pressure (vacuum degree) is obtained. Further, the processing chamber 29 is heated to a predetermined temperature by a heater driving unit (not shown) so as to have a desired temperature distribution. Further, a processing gas controlled to a predetermined flow rate is supplied by a gas supply mechanism (not shown), and in the process of the processing gas flowing through the processing chamber 29, it comes into contact with the surface of the substrate 18 and is on the surface of the substrate 18. A predetermined process is carried out. Further, the processed gas after the reaction is exhausted from the processing chamber 29 by the gas exhaust mechanism.

When the preset processing time elapses, the gas supply mechanism supplies the inert gas from the inert gas supply source (not shown), the processing chamber 29 is replaced with the inert gas, and the pressure in the processing chamber 29 is increased. Is returned to normal pressure (after-purge process). Then, the boat 26 is lowered by the boat elevator 32 through the seal cap 34.

Regarding the removal of the substrate 18 after the treatment, the substrate 18 and the pod 9 are discharged to the outside of the housing 2 in the reverse procedure of the above description. The unprocessed substrate 18 is further loaded into the boat 26, and the processing of the substrate 18 is repeated.

(Functional configuration of control system)
As shown in FIG. 3, the control system 200 includes a main controller 201 as a main control unit, a transport controller 211 as a transport control unit, a process controller 212 as a processing control unit, and a control unit that monitors data. The device management controller 215 and the like are provided. The device management controller 215 has a function of monitoring the state of the device 1 by monitoring the device data DD. In this embodiment, the control system 200 is housed in the device 1.

Here, the device data DD refers to data related to board processing (hereinafter, also referred to as a control parameter) such as the processing temperature, processing pressure, and flow rate of the processing gas when the device 1 processes the substrate 18, and the quality of the manufactured product substrate. Data on (for example, the film thickness formed and the cumulative value of the film thickness) and component data on the components of the apparatus 1 (quartz reaction tube, heater, valve, mass flow controller (hereinafter abbreviated as MFC), etc.) (For example, set value, measured value) and the like, which is data generated by operating each component when the substrate processing apparatus 1 processes the substrate 18.

The data collected during recipe execution may be referred to as process data. For example, the device data DD also includes process data such as raw waveform data as specific interval (for example, 1 second) data from the start to the end of the recipe and statistic data of each step in the recipe. The statistic data includes a maximum value, a minimum value, an average value, and the like. In addition, event data (for example, data indicating maintenance history) indicating various device events when the recipe is not executed (for example, when the substrate is not inserted in the device is idle) is also included in the device data DD.

Since the main controller 201 is electrically connected to the transport controller 211 and the process controller 212, the main controller 201 is configured to be capable of transmitting and receiving each device data DD, downloading and uploading each file, and the like.

The main controller 201 is provided with a port into which a recording medium (for example, a USB key or the like) as an external storage device is inserted / removed. The OS corresponding to this port is installed in the main controller 201. Further, an external host computer 300 and a management device 310 are connected to the main controller 201 via the communication network LAN 2. Therefore, even when the substrate processing device 1 is installed in the clean room, the host computer 300 and the management device 310 can be arranged in an office or the like outside the clean room.

The device management controller 215 is connected to the main controller 201 via a LAN line, and is configured to collect device data DD from at least the main controller 201. The device management controller 215 will be described in detail later.

The transport system controller 211 is connected to a board transport system 211A mainly composed of a rotary pod shelf 11, a boat elevator 32, a pod transport device 15, a board transfer mechanism 24, a boat 26, and a rotation mechanism (not shown). ing. The transport system controller 211 is configured to control the transport operations of the rotary pod shelf 11, the boat elevator 32, the pod transport device 15, the board transfer mechanism 24, the boat 26, and the rotary mechanism (not shown), respectively. .. In particular, the transfer system controller 211 is configured to control the transfer operation of the boat elevator 32, the pod transfer device 15, and the board transfer mechanism 24, respectively.

The process controller 212 includes a temperature controller 212a, a pressure controller 212b, a gas flow rate controller 212c, and a sequencer 212d. Since these temperature controller 212a, pressure controller 212b, gas flow controller 212c, and sequencer 212d constitute a sub-controller and are electrically connected to the process controller 212, transmission / reception of each device data DD, download of each file, and transfer of each file are performed. Uploading etc. is possible. Although the process controller 212 and the sub controller are shown separately, they may be integrated.

A heating mechanism 212A mainly composed of a heater, a temperature sensor, and the like is connected to the temperature controller 212a. The temperature controller 212a is configured to adjust the temperature inside the processing furnace 28 by controlling the temperature of the heater of the processing furnace 28. The temperature controller 212a is configured to perform switching (on / off) control of the thyristor and control the electric power supplied to the heater strands.
A gas exhaust mechanism 212B mainly composed of a pressure sensor, an APC valve as a pressure valve, and a vacuum pump is connected to the pressure controller 212b. The pressure controller 212b switches (on / off) the opening of the APC valve and the vacuum pump so that the pressure in the processing chamber 29 becomes the desired pressure at the desired timing based on the pressure value detected by the pressure sensor. It is configured to control.
The gas flow rate controller 212c is configured by an MFC as a flow rate controller.
The sequencer 212d is configured to control the supply and stop of gas from the processing gas supply pipe and the purge gas supply pipe by opening and closing the valve 212D.

The process controller 212 having such a configuration is configured to control the MFC 212c and the valve 212D so that the flow rate of the gas supplied to the processing chamber 29 becomes a desired flow rate at a desired timing.

The main controller 201, the transport system controller 211, the process system controller 212, and the device management controller 215 according to the present embodiment can be realized by using a normal computer system without using a dedicated system. For example, by installing the program on a general-purpose computer from a recording medium (USB key or the like) in which the program for executing the above-mentioned processing is stored, each controller that executes a predetermined processing can be configured.

(Main controller configuration)
Next, the configuration of the main controller 201 as the main control unit will be described with reference to FIG.
The main controller 201 includes an operation display unit 227 and a device 1 including a main controller control unit 220, a hard disk 222 as a main controller storage unit, a display unit for displaying various information, and an input unit for receiving various instructions from an operator. It is configured to include a transmission / reception module 228 as a main control communication unit that communicates with the inside and outside. The main control control unit 220 includes a CPU (central processing unit) 224 as a processing unit and a memory (RAM, ROM, etc.) 226 as a temporary storage unit, and is configured as a computer having a clock function (not shown). ing.

On the hard disk 222, each recipe file such as a recipe in which the processing conditions and processing procedures of the board are defined, a control program file for executing each of these recipe files, and a parameter file in which parameters for executing the recipe are defined. In addition to the error processing program file and the error processing parameter file, various screen files including an input screen for inputting process parameters, various icon files, and the like (none of which are shown) are stored.

Further, on the operation screen of the operation display unit 227, an input for inputting an operation instruction to the substrate transport system 211A and the substrate processing system (heating mechanism 212A, gas exhaust mechanism 212B, and gas supply system 212C) shown in FIG. It is also possible to provide each operation button as a unit.

The operation display unit 227 is configured to display an operation screen for operating the device 1. The operation display unit 227 displays information based on the device data DD generated in the board processing device 1 on the operation screen via the operation screen. The operation screen of the operation display unit 227 is, for example, a touch panel using a liquid crystal display. The operation display unit 227 receives the input data (input instruction) of the operator from the operation screen and transmits the input data to the main controller 201. Further, the operation display unit 227 is instructed to execute an arbitrary board processing recipe (hereinafter, also referred to as a process recipe) among a recipe expanded in the memory (RAM) 226 or the like or a plurality of recipes stored in the hard disk 222 (hereinafter, also referred to as a process recipe). The control instruction) is received and transmitted to the main control control unit 220.

A switching hub or the like is connected to the main controller communication unit 228, and the main controller 201 communicates with the external computer 300, other controllers (211 and 212, 215) in the device 1 and the like via the network. Is configured to send and receive.

Further, the main controller 201 transmits device data DD such as the state of the device 1 to an external host computer 300, for example, a host computer via a network (not shown). The board processing operation of the device 1 is controlled by the control system 200 based on each recipe file, each parameter file, etc. stored in the main control storage unit 222.

The hardware configuration of the device management controller 215 is the same as that of the main controller 201 described above. Further, the device management controller 215 can be realized by using a normal computer system without relying on a dedicated system like the main controller 201.

(Device management controller configuration)
Next, the configuration of the device management controller 215 as a control unit will be described with reference to FIGS. 5 and 6.

The device management controller 215 is connected to the main controller 201 via a LAN line, can collect device data DD from the main controller 201, process the accumulated device data DD, graph it, and display it on the operation display unit 227. be. Further, the device management controller 215 has a device status monitoring function, and is configured to diagnose the operating status of the device 1 by using the device data DD collected from inside and outside the device 1 and output the diagnosis result. There is.

As shown in FIG. 5, the device management controller 215 has a communication unit 215a for transmitting and receiving device data DD to and from the main controller 201, a screen display unit 215b, a screen display control unit 215c, and a storage unit 215d for storing various data. , And the device status monitoring unit 215e.

The screen display unit 215b is configured to display the functions of the device management controller 215. Further, instead of the screen display unit 215b, the operation display unit 227 of the main controller 201 may be used for display, or an operation terminal or the like may be used instead.

The screen display control unit 215c controls various data (for example, device data DD) to be processed into screen display data and displayed on the screen display unit 215b or the operation display unit 227. In this embodiment, it is configured to be displayed on the operation display unit 227 instead of the screen display unit 215b.

The storage unit 215d accumulates all device data DDs from the main controller 201 while the process recipe is being executed, and stores device data DDs such as event data even while the process recipe is not being executed. Functions as a database of. Further, various programs executed by the device management controller 215 are stored in the storage unit 215d. For example, the device status monitoring program, the data analysis program, and the like are executed when the device management controller 215 is started. The monitoring content or diagnostic condition definition data used in the program may also be stored in the storage unit 215d.

The device status monitoring unit 215e has a device status monitoring program in a memory (for example, a storage unit 215d) and executes a device status monitoring function. As shown in FIG. 6, the device condition monitoring unit 215e includes a condition determination unit 311, a storage unit 313, a search unit 314, and a diagnosis unit 315.

The condition determination unit 311 controls whether or not it is time for the diagnosis unit 315 to perform processing. Specifically, the condition determination unit 311 determines that it is time for the diagnosis unit 315 to perform the process when the predetermined condition is satisfied. The details of the predetermined conditions will be described later.

The storage unit 313 controls to store all the device data DDs supplied via the communication unit 215a in the storage unit 215d. The device data DD stored in the storage unit 215d includes at least data on the pipe temperature and the pipe pressure for the part to be monitored, which will be described in detail later. Further, the storage unit 313 controls to store various data generated by the diagnosis unit 315 (for example, outliers described in detail later) in the storage unit 215d.

The search unit 314 searches for the device data DD (particularly, piping temperature and piping pressure data) to be processed by the diagnostic unit 315 from among the various device data DDs stored in the storage unit 215d, and the diagnostic unit 315 searches for the device data DD (particularly, piping temperature and piping pressure data). Controls the supply to. In addition, the search unit 314 searches for various data (for example, outliers described in detail later) generated by the diagnosis unit 315 as needed, and controls the supply to the diagnosis unit 315.

The diagnosis unit 315 starts the diagnosis when the condition determination unit 311 notifies that the process should be performed. Then, the diagnosis unit 315 notifies the main controller 201 of the diagnosis data, which is the result of the diagnosis, via the communication unit 215a.

Specifically, in order to generate the diagnostic data to be notified to the main controller 201, the diagnostic unit 315 receives the data of the pipe temperature and the pipe pressure as the device data DD to be processed from the search unit 314, and based on the pipe pressure. The saturation temperature is calculated, and the difference between the received piping temperature and the calculated saturation temperature is calculated as an outlier. Then, the diagnosis unit 315 acquires the maximum value of the outlier within a predetermined period as the maximum outlier while accumulating the calculated outlier in the storage unit 215d, and liquefies the vapor pressure curve within the predetermined period. It is configured to acquire the number of outliers corresponding to the area as the number of outliers. These maximum outliers and the number of outliers are output as soft sensor values and notified to the main controller 201.

Further, the diagnostic unit 315 acquires the maximum outlier and the number of outliers, compares at least one of them with a predetermined threshold value, generates an alarm when the threshold value is exceeded, and notifies the main controller 201. It may be configured as.

Here, the vapor pressure curve in which the vertical axis represents temperature and the horizontal axis represents pressure is a curve predetermined by the raw material of the vaporized gas. The left side of this curve is the liquefaction region, and the right side of the curve is the vaporization region. In the present specification, the temperature and pressure on this vapor pressure curve are referred to as saturation temperature and saturation pressure, respectively, and the saturation temperature in this embodiment is defined as a temperature determined by pressure (pipe pressure in this embodiment). do.

(2) Procedure of Substrate Processing Method Next, a substrate processing method having a predetermined processing step will be described. Here, the predetermined processing step is a substrate processing step (here, a film forming step) which is one step of a semiconductor device manufacturing process.

In carrying out the substrate processing process, first, the process recipe is expanded into a memory such as RAM in the process controller 212. Then, an operation instruction is given from the main controller 201 to the process controller 212 and the transport controller 211. Further, the substrate processing step includes at least a carry-in step, a film forming step, and a carry-out step.

(Transfer process)
The main controller 201 issues a drive instruction for the board transfer mechanism 24 to the transport system controller 211. Then, while following the instructions from the transport system controller 211, the board transfer mechanism 24 starts the process of transferring the board 18 from the pod 9 on the transfer stage 21 as a mounting table to the boat 26. This transfer process is performed until the loading (wafer charging) of all the planned substrates 18 into the boat 26 is completed.

(Bring-in process)
When a predetermined number of substrates 18 are loaded into the boat 26, the boat 26 is lifted by the boat elevator 32 that operates according to the instruction from the transport system controller 211, and is charged into the processing chamber 29 formed in the processing furnace 28. (Boat road). When the boat 26 is fully loaded, the seal cap 34 of the boat elevator 32 airtightly closes the lower end of the manifold of the processing furnace 28.

(Film formation process)
Next, the processing chamber 29 is evacuated by a vacuum exhaust device such as a vacuum pump so as to have a predetermined film formation pressure (vacuum degree) while following instructions from the pressure control unit 212b. Further, the processing chamber 29 is heated by the heater so as to reach a predetermined temperature while following the instruction from the temperature control unit 212a. Subsequently, the rotation of the boat 26 and the substrate 18 by the rotation mechanism is started while following the instructions from the transport system controller 211. Then, a predetermined gas (for example, a raw material gas obtained by vaporizing a liquid raw material) is supplied to a plurality of substrates 18 held in the boat 26 while being maintained at a predetermined pressure and a predetermined temperature, and the substrate 18 is supplied. Is subjected to a predetermined treatment (for example, a film forming treatment). Before the next carry-out process, the temperature may be lowered from the processing temperature (predetermined temperature).

(Delivery process)
When the film forming process on the substrate 18 mounted on the boat 26 is completed, the rotation of the boat 26 and the substrate 18 is stopped by the rotation mechanism while following the instruction from the transport system controller 211, and the seal cap 34 is stopped by the boat elevator 32. Is lowered to open the lower end of the manifold, and the boat 26 holding the processed substrate 18 is carried out (boat unloading) to the outside of the processing furnace 28.

(Recovery process)
Then, the boat 26 holding the processed substrate 18 is cooled extremely effectively by the clean air 36 blown from the clean unit 35. Then, for example, when cooled to 150 ° C. or lower, the processed substrate 18 is removed from the boat 26 (wafer discharge) and transferred to the pod 9, and then the new unprocessed substrate 18 is transferred to the boat 26. Is done.

(3) Device status monitoring process Next, the device status monitoring process performed by the device management controller 215 in the process of executing the substrate processing step will be described.

(Overview of monitoring process)
In the film forming process, as shown in FIG. 7, when the process controller 212 opens the valve 212D, the flow rate of a predetermined type of gas is adjusted by the MFC 212c through the pipe 212E which is the flow path of the gas. , The substrate 18 is supplied to the processing chamber (reaction chamber) 29 in which the substrate 18 is carried. As the gas to be supplied, for example, there is a first element-containing gas which is a raw material gas obtained by vaporizing a liquid raw material. However, in addition, for example, a second element-containing gas which is a reaction gas or a reforming gas, an inert gas which acts as a purge gas, or the like can be supplied to the reaction chamber 29.

A detector that detects fluctuations in device data in the part to be monitored is set in advance in the pipe 212E as a part to be monitored. In FIG. 7, the part (pipe 212E) set to be monitored is set to a detector. A temperature sensor TG1 and a pressure sensor PG1 are arranged. When a plurality of locations are set as monitoring target portions, the temperature sensor TG1 and the pressure sensor PG1 are arranged in each of the locations. The portion to be monitored may be either the upstream side or the downstream side of the valve 212D. Therefore, the valve 212D is located before and after the monitored portion (that is, at least one of the front side and the rear side).

The temperature sensor TG1 is configured to detect the measured value of the temperature of the gas flowing in the pipe 212E as the pipe temperature for the portion to be monitored. The pressure sensor PG1 is configured to detect the measured value of the gas pressure in the pipe 212E as the pipe pressure for the portion to be monitored. Therefore, it is possible to detect the pipe temperature and the pipe pressure for the same gas at the same timing in the part to be monitored. The piping temperature, which is the detection result of the temperature sensor TG1, and the piping pressure, which is the detection result of the pressure sensor PG1, are output to the main controller 201 as device data DD.

By the way, as the raw material gas flowing in the pipe 212E, a gas obtained by heating and vaporizing a liquid material such as HCD (hexachlorodisilane) may be sent to the reaction chamber 29. In that case, for example, when the inside of the pipe 212E is in a pressurized state, the temperature of the vaporized gas shifts to the liquefied state side of the vapor pressure curve determined by the raw material (HCD) of the gas, and this vaporization occurs. There is a possibility that the vaporized gas will be reliquefied. It is known that when this liquefied gas is sent to the reaction chamber 29 and adheres to the substrate 18, ball-shaped particles are formed. That is, if the vaporized gas is liquefied again, there is a risk of causing troubles such as film formation abnormality and device stop due to particle generation.

In order to avoid the occurrence of troubles caused by such gas liquefaction, it is important to quickly and accurately detect the gas liquefaction state in the pipe 212E. If the gas liquefaction state can be detected quickly and accurately, it will be possible to deal with the equipment abnormality state caused by the gas liquefaction as soon as possible, and as a result, the burden of maintenance due to troubles such as film formation abnormality and equipment stoppage will be burdened. It is possible to reduce it.

In the present embodiment, the device management controller 215 is set to the following while using the device data DD (that is, the pipe temperature and the pipe pressure for the monitored portion) from the temperature sensor TG1 and the pressure sensor PG1 arranged in the pipe 212E. Perform the process described.

(Calculation processing of soft sensor value)
As shown in FIG. 8, the device management controller 215 performs a process of calculating the soft sensor value. First, the diagnostic unit 315 sets each of the maximum outlier T _Out and the number of outliers F _Count as soft sensor values to “0” as initial values (S101).

On the other hand, in the device management controller 215, the storage unit 313 stores the device data DD supplied from the main controller 201 via the communication unit 215a in the storage unit 215d during the execution of the process recipe. The device data DD stored in the storage unit 215d includes the pipe temperature which is the detection result of the temperature sensor TG1 and the pipe pressure which is the detection result of the pressure sensor PG1. The device management controller 215 collects the piping temperature and the piping pressure at a predetermined cycle (for example, every 0.1 seconds).

Then, in the device management controller 215, the condition determination unit 311 monitors the collected pipe temperature and pipe pressure. The monitoring target is the pipe temperature and the pipe pressure of the pipe 212E (for each part when a plurality of parts are set). The monitoring timing is a fixed period after the valves 212D provided before and after the pipe 212E are opened. The condition determination unit 311 determines that the collection condition is satisfied when the valve 212D is in the open state and the value of either the pipe temperature or the pipe pressure changes in a certain period after the valve 212D is in the open state. (S102). If there is no change in the pipe temperature and the pipe pressure to be monitored (determining that there is no change), the condition determination unit 311 waits until the next cycle (S103).

When the condition determination unit 311 determines that the collection conditions are satisfied in S102, the device management controller 215 performs the arithmetic processing described below in (S104) by the diagnosis unit 315.

(S104) First, the diagnostic unit 315 calculates _{the saturation temperature T TH of the} gas flowing through the pipe 212E when the collection conditions are satisfied, that is, when the value of either the pipe temperature or the pipe pressure changes.

The relationship between temperature and vapor pressure is defined by the following Antoine equation.

Here, A, B, and C are constants (Antoine constants) determined for each substance, P is vapor pressure, and T is temperature.

In the present embodiment, the above equation is modified and used from the following viewpoints.
(1) In order to reduce the processing cost of exponential calculation, the input is pressure and the saturation temperature is obtained.
(2) Since it is necessary to put on a geta for adjusting the deviation from the theoretical value and converting the absolute pressure / vapor pressure, the constant D for adjustment is prepared.
By the deformation based on such a viewpoint, the following equation for deriving the _{saturation temperature T TH can be obtained.}

Here, T _TH is the saturation temperature, A and B are the Antoine constants, C is the sum of the Antoine constants and the temperature adjustment values, D is the pressure adjustment value, and P is the piping pressure of the part to be monitored.

That is, when the value of either the pipe temperature or the pipe pressure changes, the diagnostic unit 315 uses the above equation to determine the saturation temperature T _{TH of the gas flowing through the monitored portion based on the pipe pressure at that time.} calculate.

After calculating the saturation temperature T _TH , the diagnostic unit 315 then calculates the difference between the calculated saturation temperature T _TH and the pipe temperature when either the pipe temperature or the pipe pressure changes from the saturation temperature T _TH. Calculated as an outlier T _Diff.

The diagnostic unit 315 _{determines whether or not the outlier T Diff} is negative, that is, whether or not the outlier T _Diff matches the gas liquefaction condition (S105). Specifically, it is _{determined whether or not the acquired outlier T Diff} corresponds to the liquefied region in the vapor pressure curve (FIG. 9). _{Then, it is determined that the outlier T Diff} corresponding to the liquefaction region matches the liquefaction condition. If the liquefaction conditions are not met, the pipe temperature and pipe pressure to be monitored are waited until the next cycle (S103).

(S106) When the acquired outlier T _Diff matches the liquefaction condition, the diagnostic unit 315 determines _{the outlier number F Count,} which is the counting result of the number of _{outlier T Diff} corresponding to the liquefaction region of the vapor pressure curve. Add "+1". The diagnostic unit 315 extracts and counts the pipe temperature that has changed on the liquefied side of the vapor pressure curve.

Further, the diagnostic unit 315 determines whether or not _{the acquired outlier T Diff} is larger than the set maximum outlier T _Out , that is, whether or not an outlier exceeding the _{maximum outlier T Out has occurred (S107).} .. Then, if the maximum outlier T _Out is exceeded, the maximum outlier T _Out is updated with the acquired outlier T _Diff (S108). That is, the maximum value of the acquired outlier T _Diff is set as the maximum outlier T _Out . If the maximum outlier T _Out is not exceeded, the pipe temperature and pipe pressure to be monitored are waited until the next cycle (S103).

The diagnostic unit 315 performs the above arithmetic processing in each cycle until a certain period (that is, a predetermined period) elapses after the valve 212D is opened (S109). This is repeated every time (S110).

Then, after a certain period (predetermined period) elapses after the valve 212D is opened, the diagnostic unit 315 has an outlier T _Diff (that is, the steam) corresponding to the liquefied region of the vapor pressure curve within the predetermined period. The number of outliers F _{Count , which is the number of outliers T Diffs} that match the liquefaction conditions defined by the pressure curve _{, and the maximum outlier T Out} , which is the maximum value of the outliers T _Diff , are output as soft sensor values ( S111). The output destination of the soft sensor value is the main controller 201.

Here, a specific monitoring example is shown in FIG. In the monitoring example shown in FIG. 9, out of a plurality of outliers T _Diffs acquired within a predetermined period (see the black circles in the figure), three outliers T _Diffs rush into the liquefied region of the vapor pressure curve. There is. The differences from the vapor pressure curve (saturation temperature) at a predetermined pressure are 10 ° C., 50 ° C., and 30 ° C., respectively, for the outliers T _{Diff for these three times.} In such a case, the diagnostic unit 315 outputs the soft sensor value with the _{maximum outlier T Out} = 50 ° C. and the number of outliers F _{Count = 3.}

(Operation of soft sensor value)
By outputting the maximum outlier T _Out and the number of outliers F _Count as soft sensor values in this way, the soft sensor values can be used properly according to the purpose as described below.

For example, according to the maximum outlier T _Out , since the distance from the measured temperature from the vapor pressure curve is quantified as an index, it is possible to capture a change in a state as if it were suddenly liquefied. In addition, the gas flowing through the monitored portion often does not appear as ball particles immediately even if it is momentarily in a theoretical liquefied state. Therefore, for the number of outliers F _Count , for example, by using the cumulative value as a management index, it is possible to grasp the state of reliquefaction that is likely to appear as particles.

Further, for example, _{the number of consecutive outliers T Diff} corresponding to the liquefied region can be added to one of the soft sensor values as the number of consecutive outliers. Cumulative value when the device data to be monitored changes continuously, the difference between the measured value of any device data and the saturation temperature T _th becomes negative, and a reliquefaction phenomenon of the vaporized gas occurs. It is possible to detect the occurrence of an abnormality (an error in lowering the pipe temperature) even before the threshold value of.

(Selection of Antoine constant)
By the way, as described above, the parameters (constants) of A, B, C, and D are used for the calculation of the _{saturation temperature T TH} required for the output of the soft sensor value. Of these, at least A, B, and C are constants depending on the substance, and when the liquid raw materials used for film formation are different, it is necessary to change the values according to the raw materials. In addition, A, B, C, and D may have to be corrected as necessary due to differences in conditions such as the temperature difference and pressure between the pipe surface and the pipe, and whether it is gauge pressure or absolute pressure. could be.

From this, the device management controller 215 can select at least the constants A, B, and C, preferably all of the constants A, B, C, and D, depending on the raw material of the gas flowing through the site to be monitored. It is configured in. Further, the device management controller 215 may be capable of selecting constants A, B, C, and D according to the setting location of the portion to be monitored.

Specifically, the constants A, B, C, and D can be selected for each part to be monitored. In order to realize this, the device management controller 215 prepares an Antoine constant management table and a condition setting table for each part to be monitored, as shown in FIG. The Antoine constant management table holds the Antoine constant value for each raw material in a table format. For example, the storage unit 215d stores the Antoine constant value in advance.

Then, at the start of calculation of the soft sensor value, the device management controller 215 displays the Antoine constant management table and the condition setting table for each part to be monitored on the screen, and the constants A, B, and C applied to each part to be monitored. , D are selected from the Antoine constant management table, and the selected constants A, B, C, and D are set in the corresponding parts in the condition setting table for each part to be monitored. The device management controller 215 calculates the soft sensor value while referring to the conditions on the table set in this way.

In this way, the constants A, B, C, and D can be appropriately selected for each part to be monitored according to the raw material of the gas flowing through the part.

Although the Antoine constant is taken as an example here, the temperature correction itself or the pressure correction itself may be determined based on another theoretical chemical formula.

(Monitoring action processing)
When the device management controller 215 calculates and outputs the soft sensor value, the monitoring action process described below can be performed using the soft sensor value.

The monitoring action processing is roughly divided into an alarm notification processing and an automatic maintenance recipe execution processing.

(Alarm notification processing)
When the device management controller 215 calculates the soft sensor value, the device management controller 215 _{compares any one of the number of outliers F Count} and the maximum outlier T _Out constituting the soft sensor value with a predetermined threshold value, and compares the portion to be monitored with a predetermined threshold value. Determine the liquefaction state of the gas in the pipe. Then, when the threshold value is exceeded, the gas in the pipe may be liquefied, so an alarm is generated to notify the fact.

For example, if the device management controller 215, the maximum outliers T _Out capable of capturing a change in the state as catastrophically liquefied threshold management, was the largest outliers T _Out exceeding the threshold, the pipe It is determined that the gas in the above may be liquefied. Then, the device management controller 215 generates an alarm for the main controller 201. In response to this, the main controller 201 outputs an alarm through the operation display unit 227 so that the operator or the like can check the status of the device 1 and perform predetermined error processing such as performing maintenance as necessary. Can be done. The specific mode of the alarm is not particularly limited.

Threshold management may be performed for the number of outliers F _Count . In that case, for example, _{the cumulative value of the number of outliers F Count} is managed, and when the cumulative value exceeds the threshold value (a certain amount), an alarm is output. In this way, it may appear as particles. It is possible to respond appropriately to the situation of high reliquefaction.

(Automatic maintenance recipe execution process)
Upon receiving the soft sensor value output from the device management controller 215, the main controller 201 performs the following processing using the _{number of deviations F Count included in the soft sensor value.}

The main controller 201 stores, for example, an action definition table as shown in FIGS. 11 and 12 in advance. The action definition table links (associates) the part to be monitored, the soft sensor value (especially the number of missed F _Count ) for that part, and the recipe that specifies the action to be performed for that part. be.

_{Then, when the soft sensor value including the number of deviations F Count} for each part to be monitored is received from the device management controller 215, the main controller 201 is notified to the cumulative value of the _{number of deviations F Count in the action definition table.} Add _Count. After updating the cumulative value, the main controller 201 compares the updated cumulative value with the threshold value registered in the action definition table.

In the example shown in FIG. 11, when the cumulative value was 998, it was notified that the _{number of out-of-orders F Count was 3 for the corresponding part in that state.} It represents a state in which 3 is added to the value and the number of deviations is updated to 1001. In addition, due to the increase in the cumulative value, it represents a state in which the threshold value of 1000 registered in the action definition table has been exceeded.

In this way, when _{the cumulative value of the number of outliers F Count} exceeds the threshold value for a certain monitored part, the main controller 201 sets the action definition table for that part after the end of the process recipe currently being executed. Execute the maintenance recipe registered in.

Specifically, as shown in FIG. 12, for example, at the tank outlet, which is one of the parts to be monitored, when _{the cumulative value of the number of detached F Count} exceeds the threshold value, the main controller 201 causes the gas at that part. It is configured to execute the cleaning recipe registered in the action definition table as a maintenance recipe that determines that liquefaction has been detected and defines the action to be taken in that case. _{Then, by executing the cleaning recipe, the main controller 201 flows an inert gas such as N 2} gas to the tank outlet, which is one of the monitored parts, to feed the liquefied raw material (HCD, etc.). It is configured to be removed. The maintenance recipe that defines the action to be performed is not limited to the cleaning recipe as described above, and if it is registered in the action definition table in advance, for example, parts (pump) replacement and maintenance recipe execution. It may be the one that performs maintenance (other actions) such as.

By performing such an action, even if _{the cumulative value of the number of outliers F Count} exceeds the threshold value, the maintenance recipe automatically registered in the action definition table is automatically created so that the ball particles do not adhere to the substrate 18. It becomes possible to execute.

After performing the action, the main controller 201 resets the cumulative value of the action definition table for the part where the action is performed to zero. That is, the main controller 201 initializes the corresponding cumulative value in the action definition table after executing the maintenance recipe. As a result, even when the gas can be liquefied again, it is possible to appropriately deal with it.

Although the case where the _{cumulative value is used as a specific example of the management of the number of outliers F Count has been} described here, the case is not limited to this, and the following modes of management may be performed. For example, instead of managing by the cumulative value as described above, when the number of outliers F _Count occurs even once, the action specified in the action definition table may be executed. _{Further, for example, when the number of consecutive outliers T Diff} corresponding to the liquefied region is stored in the action definition table as the continuous number and only the cumulative value of the continuous number continues to increase, the action definition You may want to perform the actions specified in the table.

Further, the case where the maintenance recipe is executed when the cumulative value of the number of deviations F _{Count exceeds the threshold value (constant amount) has been described.} The output of (including the pipe temperature and the pipe pressure for the part to be monitored) to the device management controller 215 may be performed.

(4) Effects of the present embodiment According to the present embodiment, one or more of the following effects can be obtained.

According to this embodiment, an abnormality in a pipe, which is a factor for generating particles such as ball particles, is quantitatively expressed, and by monitoring a sudden change in the numerical value and a cumulative value, the eyes in the substrate processing apparatus are observed. Allows detection of invisible abnormal conditions.

Therefore, when the inside of the pipe is liquefied, it is possible to capture the generation of particles due to the liquefied raw material flowing into the reaction chamber 29, and it is possible to prevent the substrate 18 to which a large amount of particles are attached from flowing out to the subsequent process. Can be prevented.

That is, according to the present embodiment, it is possible to quickly and accurately detect the liquefied state of the gas in the pipe and avoid the occurrence of troubles due to the liquefied gas.

<Other embodiments>
Although one embodiment of the present invention and its modifications have been specifically described above, the present invention is not limited to the above-described embodiments or modifications, and various modifications can be made without departing from the gist thereof. ..

In the above-described embodiment or modification, mainly the substrate processing apparatus used in the semiconductor manufacturing process and the manufacturing method of the semiconductor apparatus have been described, but the present invention is not limited thereto, and for example, a liquid crystal display (LCD). ) It is also applicable to a substrate processing apparatus for processing a glass substrate such as an apparatus and a method for manufacturing the same.

Further, as for the film forming step, it is sufficient that the liquid raw material is vaporized and supplied to the processing chamber (reaction chamber) 29 in the processing furnace 28 to form a film on the surface of the substrate (wafer) 18. The film type to be formed is not particularly limited.

Further, the film forming process performed in the film forming step includes, for example, CVD (chemical vapor deposition), PVD (Physical Vapor Deposition), a process of forming an oxide film and a nitride film, a process of forming a film containing a metal, and the like.

Further, in the above-described embodiment or modification, a method for manufacturing a substrate processing apparatus and a semiconductor apparatus for performing a film forming process has been described, but the present invention is not limited thereto, and for example, another substrate processing apparatus ( It can also be applied to exposure equipment, lithography equipment, coating equipment, CVD equipment using plasma, etc.).

1 ... Substrate processing device, 18 ... Substrate (wafer), 29 ... Processing chamber (reaction chamber), 200 ... Control system, 201 ... Main controller, 212c ... Gas flow controller (MFC), 212D ... Valve, 215 ... Device management controller , DD ... device data, PG1 ... pressure sensor, TG1 ... temperature sensor

Claims (14)

A main control unit that processes a substrate by executing a process recipe including at least a procedure for supplying gas and a procedure for purging the gas.
A control unit that collects device data transmitted from the main control unit, and
It is a substrate processing apparatus equipped with
The control unit
During the execution of the process recipe, either the pipe temperature or the pipe pressure is collected while collecting the pipe temperature and the pipe pressure for the part to be monitored in the pipe serving as the gas flow path in the device data. When the value changes
The saturation temperature with respect to the pipe pressure is calculated, and the difference between the saturation temperature and the pipe temperature is calculated as an outlier.
The outliers corresponding to the liquefied region of the vapor pressure curve determined according to the raw material of the gas are extracted.
Within a predetermined period, the number of outliers corresponding to the liquefied region of the vapor pressure curve, the number of outliers, and the maximum outlier, which is the maximum value of the outliers, are output to the main control unit. It is configured,
Board processing equipment. The control unit is configured to compare at least one of the number of outliers and the maximum outlier with a predetermined threshold value, generate an alarm when the threshold value is exceeded, and perform a predetermined error processing. Yes,
The substrate processing apparatus according to claim 1. The control unit is configured to calculate the outliers when the valves provided before and after the monitored portion are in the open state.
The substrate processing apparatus according to claim 1. The control unit is configured to calculate the saturation temperature by the following formula.
The substrate processing apparatus according to claim 1.

Here, T _TH is the saturation temperature, A and B are Antoine constants, C is the sum of the Antoine constant and the temperature adjustment value, D is the pressure adjustment value, and P is the piping pressure. The control unit is configured to output the maximum outlier and the number of outliers as soft sensor values to the main control unit.
The substrate processing apparatus according to claim 1. The main control unit acquires the soft sensor value including the maximum outlier and the number of outliers from the control unit, manages the cumulative value of the number of outliers, and when the cumulative value exceeds a certain amount. It is configured to output the pipe temperature and the pipe pressure to the control unit.
The substrate processing apparatus according to claim 5. The main control unit is configured to execute a maintenance recipe when the cumulative value of the number of deviations exceeds a certain amount according to an action definition table stored in advance.
The substrate processing apparatus according to claim 6. The control unit is configured to notify the main control unit of the number of deviations for each part to be monitored.
The main control unit is configured to add the notified number of deviations to the cumulative value of the number of deviations in the action definition table stored in advance.
The substrate processing apparatus according to claim 1. The main control unit compares the threshold value registered in advance in the action definition table with the cumulative value of the number of deviations, and when the cumulative value exceeds the threshold value, the action is performed after the recipe currently being executed is completed. It is configured to execute the maintenance recipe registered in the definition table,
The substrate processing apparatus according to claim 8. The main control unit is configured to initialize the cumulative value after executing the maintenance recipe.
The substrate processing apparatus according to claim 9. The substrate processing apparatus according to claim 1, wherein the control unit is configured to extract a condition in which the difference between the piping temperature and the saturation temperature becomes negative. The control unit is configured to set constants A, B, and C according to the raw material of the gas.
The substrate processing apparatus according to claim 4. A method of manufacturing a semiconductor device having a substrate processing step of processing a substrate by executing a process recipe including at least a procedure of supplying gas and a procedure of purging the gas.
In the substrate processing step,
When the value of either the pipe temperature or the pipe pressure changes while collecting the pipe temperature and the pipe pressure for the part to be monitored in the pipe serving as the gas flow path during the execution of the process recipe. , The step of calculating the saturation temperature with respect to the piping pressure, and
The step of calculating the difference between the saturation temperature and the piping temperature as an outlier, and
A step of extracting the outlier corresponding to the liquefied region of the vapor pressure curve determined according to the raw material of the gas, and
A step of outputting the number of outliers, which is the number of outliers corresponding to the liquefied region of the vapor pressure curve, and the maximum outlier, which is the maximum value of the outliers, within a predetermined period.
A method for manufacturing a semiconductor device having. A procedure for processing a substrate by executing a process recipe including at least a procedure for supplying gas and a procedure for purging the gas, and a procedure for processing the substrate.
While collecting the pipe temperature and the pipe pressure for the part to be monitored in the pipe serving as the gas flow path, when either the pipe temperature or the pipe pressure value changes, the saturation temperature with respect to the pipe pressure is set. Procedure to calculate and
The procedure for calculating the difference between the saturation temperature and the piping temperature as an outlier, and
A procedure for extracting the outliers corresponding to the liquefied region of the vapor pressure curve determined according to the raw material of the gas, and
A procedure for outputting the number of outliers, which is the number of outliers corresponding to the liquefied region of the vapor pressure curve, and the maximum outlier, which is the maximum value of the outliers, within a predetermined period.
Is a program that causes the board processing equipment to execute via a computer.

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