JPWO2019204382A5

JPWO2019204382A5 -

Info

Publication number: JPWO2019204382A5
Application number: JP2020558011A
Authority: JP
Publication date: 2023-12-18
Anticipated expiration: 2039-04-17

Description

ホウ素核形成層がモリブデン膜を作成する方法のバージョンで実質的に消費されるという言及は、１つ以上のホウ素核形成層が１つ以上のモリブデン核形成層で置き換えられたサンプルの断面のＳＥＭ分析によって視認可能なホウ素がないことを指し得る。実質的に消費されるとは、付加的または代替的に、５重量％未満、または場合により１重量％未満のホウ素がモリブデン膜に、及び任意の下にあるモリブデン核形成層に存在することを指し得る。ホウ素含有量は、基板からの膜の酸溶解によって決定され、元素分析によって測定されることが可能である。実質的に消費されるとは、ＭｏＣｌ_５から７００℃で類似の基板上に蒸着された類似の厚さ（±１０％）のモリブデン層の±２０％以内の室温（ＲＴ、２０℃～２３℃）で測定された抵抗率を有するモリブデン膜も指すことができる。
The mention that the boron nucleation layer is substantially consumed in the version of the method for creating molybdenum films is evidenced by the SEM of a cross-section of a sample in which one or more boron nucleation layers are replaced by one or more molybdenum nucleation layers. Analysis may refer to the absence of visible boron. Substantially consumed additionally or alternatively means that less than 5% by weight, or optionally less than 1% by weight, of boron is present in the molybdenum film and in any underlying molybdenum nucleation layer. It can be pointed out. Boron content is determined by acid dissolution of the film from the substrate and can be measured by elemental analysis. Substantially consumed means MoCl within ±20% of a molybdenum layer of similar thickness (±10%) deposited on a similar substrate at ₅ to 700°C at room temperature (RT, 20°C to 23°C). ) can also refer to a molybdenum film with a resistivity measured at .

Claims

A method for manufacturing a molybdenum layer, the method comprising:
reacting a boron-containing nucleation layer on a substrate with a vapor composition comprising molecules containing molybdenum and chlorine atoms, the substrate being at a temperature between 450°C and 550°C; The boron-containing nucleation layer is consumed such that the layer contains less than 5% by weight boron by elemental analysis, and substantially all of the boron-containing nucleation layer is combined with the molybdenum nucleation layer on the substrate. to replace, to react,
depositing a further boron-containing nucleation layer over the molybdenum nucleation layer on the substrate, the substrate being at a temperature between 300°C and 550°C;
reacting the further boron-containing nucleation layer with a vapor composition comprising molecules containing molybdenum and chlorine atoms , the substrate being at a temperature between 450°C and 550°C; reacting, wherein at least a portion of the nucleation layer is consumed and at least some of the consumed additional boron- containing nucleation layer is replaced by an additional molybdenum nucleation layer;
including;
A method, wherein the deposited thickness of the further boron-containing nucleation layer is less than the deposited thickness of the boron-containing nucleation layer over the substrate.

A method for manufacturing a molybdenum layer, the method comprising:
depositing a boron-containing nucleation layer over the substrate for a first period of time;
reacting a boron-containing nucleation layer on a substrate with a vapor composition comprising molecules containing molybdenum and chlorine atoms, the substrate being at a temperature between 450°C and 550°C; the boron-containing nucleation layer is consumed such that the layer contains less than 5% by weight boron by elemental analysis, and substantially all of the boron-containing nucleation layer is replaced with a molybdenum nucleation layer on the substrate; to react and
depositing a further boron-containing nucleation layer over the molybdenum nucleation layer on the substrate over a second time period, wherein the substrate is at a temperature between 300°C and 550°C; depositing for a period shorter than 1;
reacting the further boron-containing nucleation layer with a vapor composition comprising molecules containing molybdenum and chlorine atoms , the substrate being at a temperature between 450°C and 550°C; reacting, wherein at least a portion of the nucleation layer is consumed and at least some of the consumed additional boron- containing nucleation layer is replaced by an additional molybdenum nucleation layer;
including methods.

3. A method according to claim 1 or 2, wherein the thickness of the boron-containing nucleation layer is between 5 Å and 50 Å.

3. A method according to claim 1 or 2, wherein the molybdenum layer contains less than 1% by weight of boron by elemental analysis.

3. A process according to claim 1 or 2, wherein the further boron-containing nucleation layer is substantially consumed by the reaction such that the molybdenum layer contains less than 5% by weight of boron by elemental analysis.

6. The method of claim 5, wherein the molybdenum layer contains less than 1% by weight boron by elemental analysis.

3. The method of claim 1 or 2, wherein the vapor composition is substantially free of reducing gas.

3. A method according to claim 1 or 2, wherein the further molybdenum nucleation layer constitutes a top molybdenum nucleation layer.

9. The method of claim 8, comprising depositing a molybdenum complex and forming a bulk molybdenum layer over the upper molybdenum nucleation layer at a temperature between 450<0>C and 550<0>C.

9. The method of claim 8, wherein the molybdenum complex comprises _MoCl5 or _MoOCl4 .