JPWO2019014213A5 - - Google Patents
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- JPWO2019014213A5 JPWO2019014213A5 JP2019567975A JP2019567975A JPWO2019014213A5 JP WO2019014213 A5 JPWO2019014213 A5 JP WO2019014213A5 JP 2019567975 A JP2019567975 A JP 2019567975A JP 2019567975 A JP2019567975 A JP 2019567975A JP WO2019014213 A5 JPWO2019014213 A5 JP WO2019014213A5
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Description
本開示のスラリーには、カチオン性、アニオン性、両性イオン性又は非イオン性から選択される様々な界面活性剤も緩衝剤として加えることができる。界面活性剤は、個別に用いることも、混合状態で用いることもできる。本発明で使用できる界面活性剤のリストが、M. J. Rosen「Surfactants and Interfacial Phenomena」、1989年、John Wiley & Sons社(以下、Rosenと呼ぶ)の3~32、52~54、70~80、122~132及び398~401ページに記載されている。界面活性剤の濃度は、0.0001g/Lから100gm/Lまで変えることができ、典型的な濃度の範囲は0.1gm/L~5gm/Lである。BRは、非イオン性界面活性剤の添加により、1.0から2.5超に変化することがわかった。更に、BR比の増加は、硬質の金属及び非金属の研磨の際の除去率の増加にもつながる。
Various surfactants selected from cationic, anionic, zwitterionic or nonionic can also be added to the slurry of the present disclosure as buffering agents. Surfactants can be used individually or in admixture. A list of surfactants that can be used in the present invention is given by M.J. 80, 122-132 and 398-401. Surfactant concentrations can vary from 0.0001 g/L to 100 gm/L, with typical concentrations ranging from 0.1 gm/L to 5 gm/L. BR was found to change from 1.0 to greater than 2.5 with the addition of nonionic surfactant. Furthermore, increasing the BR ratio also leads to increased removal rates during polishing of hard metals and non-metals.
Claims (16)
pH値が1~5又は8~11であり、濃度が0.01M~2.0Mである少なくとも1種類の過化合物酸化剤と、
前記過化合物酸化剤とは異なり、緩衝比を2.5超とする少なくとも1種類の緩衝剤
を含み、
前記緩衝比が、
(i)前記水性溶媒と前記過化合物酸化剤と前記緩衝剤を含む第1のスラリー溶液のpH値を9.0から3.0に下げるのに必要な強酸の量及び
(ii)前記緩衝剤を含まないことを除いて第1のスラリー溶液と同一である第2のスラリー溶液のpH値を9.0から3.0に下げるのに必要な前記強酸の量
の比率(i)/(ii)として定義されており、
前記緩衝剤が、スラリー溶液中で0.1gm/L~5gm/Lの範囲の濃度で非イオン性界面活性剤を含み、
前記スラリー溶液は、硬質のスラリー粒子を含まない、又は、全体にビッカース硬度が300Kg/mm2未満又はモース硬度が4未満である軟質のスラリー粒子のみを有することを特徴とする、化学機械研磨(CMP)用スラリー溶液。 an aqueous solvent;
at least one percompound oxidizing agent with a pH value of 1-5 or 8-11 and a concentration of 0.01M-2.0M;
at least one buffering agent, different from said percompound oxidizing agent, with a buffering ratio greater than 2.5
including
The buffer ratio is
(i) the amount of strong acid required to lower the pH value of the first slurry solution comprising said aqueous solvent, said peroxide oxidizing agent and said buffering agent from 9.0 to 3.0;
(ii) the amount of said strong acid required to lower the pH value of a second slurry solution, which is identical to the first slurry solution except that it does not contain said buffering agent, from 9.0 to 3.0;
is defined as the ratio (i)/(ii) of
the buffer comprises a nonionic surfactant at a concentration ranging from 0.1 gm/L to 5 gm/L in the slurry solution;
The slurry solution does not contain hard slurry particles, or has only soft slurry particles having a Vickers hardness of less than 300 Kg/mm 2 or a Mohs hardness of less than 4 throughout the chemical mechanical polishing ( CMP) slurry solution .
濃度が0.01M~2.0Mである少なくとも1種類の過化合物酸化剤と、1~5又は8~11のpH値と、前記過化合物酸化剤とは異なり、緩衝比を2.5超とする少なくとも1種類の緩衝剤を含むスラリー溶液であって、
前記緩衝比が、
(i)前記水性溶媒と前記過化合物酸化剤と前記緩衝剤を含むスラリー溶液のpH値を9.0から3.0に下げるのに必要な強酸の量及び
(ii)前記緩衝剤を含まないことを除いて第1のスラリー溶液と同一である第2のスラリー溶液のpH値を9.0から3.0に下げるのに必要な前記強酸の量
の比率(i)/(ii)として定義されており、
前記緩衝剤が、スラリー溶液中で0.1gm/L~5gm/Lの範囲の濃度で非イオン性界面活性剤を含み、
硬質のスラリー粒子を含まない、又は、全体にビッカース硬度が300Kg/mm2未満又はモース硬度が4未満である軟質のスラリー粒子のみを有するスラリー溶液を提供し、
ビッカース硬度が1,000Kg/mm2より大きい硬質表面に前記スラリー溶液を滴下し、
前記硬質表面に対して研磨パッドを回転させながら、間に前記スラリー溶液を挟んで前記研磨パッドで前記硬質表面を押圧することを含む、硬質表面の化学機械研磨(CMP)方法。 an aqueous solvent;
at least one percompound oxidizing agent with a concentration of 0.01 M to 2.0 M, a pH value of 1 to 5 or 8 to 11, and a buffer ratio of greater than 2.5, unlike said percompound oxidizing agents. A slurry solution containing at least one buffer of
The buffer ratio is
(i) the amount of strong acid required to lower the pH value of the slurry solution comprising said aqueous solvent, said peroxide oxidizing agent and said buffering agent from 9.0 to 3.0;
(ii) the amount of said strong acid required to lower the pH value of a second slurry solution, which is identical to the first slurry solution except that it does not contain said buffering agent, from 9.0 to 3.0;
is defined as the ratio (i)/(ii) of
the buffer comprises a nonionic surfactant at a concentration ranging from 0.1 gm/L to 5 gm/L in the slurry solution;
providing a slurry solution containing no hard slurry particles or having only soft slurry particles having a Vickers hardness of less than 300 Kg/mm 2 or a Mohs hardness of less than 4;
Dropping the slurry solution onto a hard surface having a Vickers hardness of greater than 1,000 Kg/mm 2 ;
A method of chemical-mechanical polishing (CMP) of a hard surface, comprising pressing the polishing pad against the hard surface with the slurry solution in between while rotating the polishing pad against the hard surface.
9. The method of claim 8 , wherein when the peroxide oxidant comprises alkali metal ions, the slurry solution further comprises at least one alkali metal ion in addition to the alkali metal ions in the peroxide oxidant. Method.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/645,777 US11078380B2 (en) | 2017-07-10 | 2017-07-10 | Hard abrasive particle-free polishing of hard materials |
US15/645,777 | 2017-07-10 | ||
PCT/US2018/041428 WO2019014213A1 (en) | 2017-07-10 | 2018-07-10 | Hard abrasive particle-free polishing of hard materials |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020527851A JP2020527851A (en) | 2020-09-10 |
JPWO2019014213A5 true JPWO2019014213A5 (en) | 2022-12-15 |
JP7254722B2 JP7254722B2 (en) | 2023-04-10 |
Family
ID=63165459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019567975A Active JP7254722B2 (en) | 2017-07-10 | 2018-07-10 | Hard material polishing without hard abrasive particles |
Country Status (6)
Country | Link |
---|---|
US (3) | US11078380B2 (en) |
EP (1) | EP3652260A1 (en) |
JP (1) | JP7254722B2 (en) |
KR (3) | KR20220065087A (en) |
CN (1) | CN111094482B (en) |
WO (1) | WO2019014213A1 (en) |
Families Citing this family (5)
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US11078380B2 (en) | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
US10647887B2 (en) * | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
TW202134364A (en) | 2020-01-31 | 2021-09-16 | 美商恩特葛瑞斯股份有限公司 | Cmp composition for polishing hard materials |
IT202000016279A1 (en) * | 2020-07-06 | 2022-01-06 | St Microelectronics Srl | PROCESS FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE WITH IMPROVED CHARACTERISTICS |
WO2024112735A1 (en) * | 2022-11-23 | 2024-05-30 | Engis Corporation | Fixed-abrasive nano-grinding plates, related articles, and related methods |
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-
2017
- 2017-07-10 US US15/645,777 patent/US11078380B2/en active Active
-
2018
- 2018-07-10 KR KR1020227015416A patent/KR20220065087A/en not_active Application Discontinuation
- 2018-07-10 JP JP2019567975A patent/JP7254722B2/en active Active
- 2018-07-10 CN CN201880046086.8A patent/CN111094482B/en active Active
- 2018-07-10 KR KR1020207003213A patent/KR20200026937A/en not_active IP Right Cessation
- 2018-07-10 KR KR1020247000707A patent/KR20240013840A/en active Application Filing
- 2018-07-10 EP EP18752904.5A patent/EP3652260A1/en active Pending
- 2018-07-10 WO PCT/US2018/041428 patent/WO2019014213A1/en unknown
-
2019
- 2019-12-04 US US16/702,680 patent/US20200102479A1/en not_active Abandoned
-
2021
- 2021-07-01 US US17/365,916 patent/US11820918B2/en active Active
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