JPWO2017179296A1 - Substrate holding device - Google Patents

Abstract

  The substrate holding device (101) detects warpage of the lower plate (3), a plurality of outlets (1) for blowing gas onto the substrate (4) and holding the substrate (4) in a non-contact manner, and the substrate (4). And a control unit (24) that adjusts the amount of gas blown from each of the plurality of outlets (1) based on the measurement result of the warp detection unit (25). A guide portion (2) capable of fixing the position of the substrate (4) is disposed on the lower plate (3), and the guide portion (2) has a tapered portion (2T) inclined with respect to the vertical direction. The tapered portion (2T) is a vertical direction of the main surface (3A) of the lower plate in a state where the main surface of the guide portion (2) is placed so as to be in contact with the main surface (3A) of the lower plate. The inclination angle with respect to is 30 ° or more and 60 ° or less.

Description

  The present invention relates to a technique for holding a substrate.

  2. Description of the Related Art When a semiconductor substrate is transported, a transport device that holds and transports a substrate in a non-contact manner by applying the Bernoulli effect for the purpose of suppressing scratches or adhesion of foreign substances on the semiconductor substrate is generally known. For example, in International Publication No. 2013/027828 (Patent Document 1), a swirling flow is generated at a plurality of jet outlets provided in a substrate holding mechanism of a transport device, and the substrate is placed by the suction pressure generated at the center of the swirling flow. On the other hand, it is disclosed that the substrate is held on the apparatus in a non-contact manner by maintaining a constant distance between the apparatus and the plate-like member by the gas ejected from the ejection port.

  However, in a non-contact type substrate holding apparatus that applies a substrate holding mechanism based on the Bernoulli effect, a substrate is held by blowing gas from a plurality of jet openings provided in the substrate holding apparatus. For this reason, when the substrate is warped, there may be a difference in the distance between each jet port and the substrate, and the flow of gas held in a non-contact manner is disturbed by floating and sucking the substrate. This causes a problem that the substrate holding becomes unstable and the substrate vibrates. When such vibrations occur, chipping, that is, chipping occurs due to positional displacement of the substrate and contact with the apparatus.

  Thus, for example, Japanese Patent Laying-Open No. 2013-219069 (Patent Document 2) discloses a substrate holding device including a mechanism that adjusts the amount of gas blown to hold a substrate in accordance with the measurement result of the warpage of the substrate. Has been. If such a mechanism is used, the warp of the substrate is corrected by adjusting the amount of gas blown from the plurality of jet ports.

International Publication No. 2013/027828 JP 2013-219069 A

  However, even if the warpage of the substrate is corrected as in JP 2013-219069 A, the substrate may be chipped if it comes into contact with, for example, the lower plate on which the substrate is installed.

  The present invention has been made in view of the above problems, and the object thereof is to hold the substrate in a non-contact manner, which can suppress the vibration of the substrate and can more reliably suppress the occurrence of chipping of the substrate. It is to provide a substrate holding device to be conveyed.

  In order to solve the above problems, a substrate holding apparatus according to the present invention detects a lower plate, a plurality of outlets for blowing gas to the substrate in order to hold the substrate on the lower plate in a non-contact manner, and warpage of the substrate. A warpage detection unit and a control unit that adjusts the amount of each of the plurality of outlets based on the measurement result of the warpage detection unit. A guide portion capable of fixing the position of the substrate is fixed to the lower plate. The guide part has a tapered part inclined with respect to the vertical direction. The inclination angle of the tapered portion with respect to the vertical direction is not less than 30 ° and not more than 60 °.

  According to the present invention, when a non-contact type warped substrate is held, the warpage of the substrate is corrected by adjusting the blowout amount of each blowout port, and the vibration of the held substrate is suppressed. be able to. In addition, according to the present invention, the guide portion fixed to the lower plate has the tapered portion having the above inclination angle, so that even when the substrate is in contact with the guide portion, the end portion of the substrate may be chipped. Can be reduced.

It is a flowchart which shows the outline | summary of the manufacturing process of a semiconductor device. FIG. 3 is a schematic plan view showing a substrate holding part of the substrate holding apparatus according to the first example of the first embodiment. It is a block diagram of the board | substrate holding | maintenance apparatus by the 1st example of Embodiment 1 including the cross section of the part which follows the III-III line of the board | substrate holding | maintenance part of FIG. 5 is a cross-sectional view showing a guide portion of the substrate holding device according to the first example of Embodiment 1. FIG. 6 is a schematic plan view showing a substrate holding part of the substrate holding apparatus according to the second example and the third example of Embodiment 1. FIG. It is a block diagram of the board | substrate holding apparatus by the 2nd example of Embodiment 1 including the cross section of the part which follows the AA line of the board | substrate holding part of FIG. It is a block diagram of the board | substrate holding apparatus by the 3rd example of Embodiment 1 including the cross section of the part in alignment with the AA of the board | substrate holding part of FIG. FIG. 5 is a schematic plan view showing a substrate holding part of a substrate holding device according to a second embodiment. It is a block diagram of the board | substrate holding | maintenance apparatus by Embodiment 2 including the cross section of the part which follows the IX-IX line of the board | substrate holding part of FIG. FIG. 6 is a schematic plan view showing a substrate holding part of a substrate holding device according to a third embodiment. It is a block diagram of the board | substrate holding apparatus by Embodiment 3 including the cross section of the part which follows the XI-XI line of the board | substrate holding part of FIG. FIG. 10 is a schematic plan view showing a substrate holding part of a substrate holding device according to a fourth embodiment. It is a block diagram of the board | substrate holding | maintenance apparatus by Embodiment 4 including the cross section of the part which follows the XIII-XIII line | wire of the board | substrate holding part of FIG. FIG. 10 is a cross-sectional view showing a guide part of a substrate holding device according to a fifth embodiment. It is a schematic plan view which shows the board | substrate holding part of the board | substrate holding apparatus by Embodiment 6-8. It is a block diagram of the board | substrate holding apparatus by Embodiment 6 including the cross section of the part which follows the BB line of the board | substrate holding part of FIG. It is a block diagram of the board | substrate holding | maintenance apparatus by Embodiment 7 including the cross section of the part which follows the BB line of the board | substrate holding part of FIG. It is a block diagram of the board | substrate holding apparatus by Embodiment 8 containing the cross section of the part which follows the BB line of the board | substrate holding part of FIG.

Embodiment 1 FIG.
FIG. 1 shows an example of a manufacturing process of a general semiconductor device, that is, a semiconductor chip on which a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or the like is mounted. That is, referring to FIG. 1, in the semiconductor chip manufacturing process, first, a lot of wafers formed of a semiconductor material such as silicon is prepared (S1). For each wafer in the lot, oxidation / CVD (Chemical Vapor Deposition) step (S2), metallization (S3), photoengraving technology (S4) and etching (S5), diffusion / ion implantation are performed by generally known processes. By performing (S6), patterns such as a gate oxide film, a gate electrode, a source region, and a drain region constituting the MOSFET and the like are formed. Next, a sample test (S7) is performed on the wafer on which such a pattern is formed. Thereafter, back surface processing (S8) is performed, and necessary electrodes and the like are formed on the back surface opposite to the front surface of the wafer on which the gate oxide film and the like are formed. Thereafter, in the dicing step (S9), the wafer is divided into a plurality of chips having a desired size. After the chip test (S10) is performed on the semiconductor chip after dicing, the non-defective product is packed (S11) and shipped.

  In the substrate holding device of the present embodiment described below, for example, in the back surface processing of (S8), the wafer, that is, the substrate is placed on the surface of the member, so that the pattern formed on the surface of the substrate contacts the member. From the standpoint of avoiding damage, it is used to hold the substrate without touching it. This substrate holding device is not limited to a semiconductor wafer on which a MOSFET is formed, but is also applied to a back surface processing (S8) on a semiconductor wafer on which a so-called optical device or MEMS (Micro Electro Mechanical Systems) device is formed.

  FIG. 2 is a schematic diagram showing a substrate holding portion of the substrate holding apparatus according to the first example of the first embodiment of the present invention. Referring to FIG. 2, a substrate holding device 101 of the first example of the present embodiment includes a lower plate 3, a plurality of, for example, seven gas outlets 1 disposed on the upper surface of the lower plate 3, A plurality of, for example, six gas suction ports 5 are provided on the upper surface of the lower plate 3, and a guide 2 is provided on the outer surface of the lower plate 3 in the plan view of the lower plate 3. The guide 2 is a member for correcting the position in plan view of the substrate 4 that can be arranged so as to float above the lower plate 3. For example, a plurality of guides 2 are spaced apart from each other in the direction along the outer periphery of the lower plate 3. (Three) are arranged.

  For example, the lower plate 3 preferably has an annular shape that matches the planar shape of the substrate to be held, that is, the wafer, but is not limited thereto. In addition, it is preferable that the lower board 3 has a notch part in the part regarding the circumferential direction. This facilitates the installation of the substrate 4 on the upper side of the lower plate 3.

  FIG. 3 is a configuration diagram of the substrate holding device of the present embodiment including a cross section of a portion along the line III-III of the substrate holding portion shown in FIG. The substrate holding device 101 is provided with a warpage detection unit 25 for detecting the warpage of the substrate 4. When detecting the warp of the substrate 4 by the warp detection unit 25, the distance d between the lower plate 3 and the substrate 4 is measured at a plurality of locations, and the warp of the substrate 4 is detected. That is, when all the distances d of the plurality of places are equal, there is no warp, and when there is a difference in distance, it is detected that there is a warp. In the present embodiment, six gas suction ports 5 are provided between the outlets 1 in the lower plate 3 in order to measure the distance. In this embodiment, the number of outlets 1 is 7 and the number of gas suction openings 5 is 6. However, the present invention is not limited to this, and the number of outlets 1 is sufficient if the floating pressure of the substrate 4 satisfies a certain required amount. This is not the case. Further, the number and the position of the gas suction ports 5 are not limited as long as they are the positions and the numbers at which the warpage of the substrate 4 of each blowout port 1 can be measured.

  In addition, the substrate holding device 101 includes a gas supply unit 21, a gas suction unit 22, a pressure gauge 23, and a control unit 24. The gas supply part 21 is a part which can be supplied so that gas may be blown out upward from each outlet 1. For this reason, the gas supply unit 21 is connected to the outlet 1.

  Gas is supplied from the gas supply unit 21 to each outlet 1. Here, the gas refers to the atmosphere in which the substrate holding device is placed, and is usually air. If moisture in the air becomes a problem, for example, dry nitrogen gas can be used. The blowout port 1 is configured such that the gas supplied from the gas supply unit 21 forms a swirling flow and is blown out so as to blow onto the substrate 4 above the blowout port 1. The substrate 4 is held by the substrate holding device 101 so as to float in a non-contact manner with respect to the lower plate 3 by the Bernoulli effect by the swirling flow. Further, the gas supply units 21 are provided in the same number as the air outlets 1 corresponding to the air outlets 1. Therefore, it is possible to vary the amount of gas supplied to each outlet 1.

  Next, the gas suction unit 22 is a part that performs a process of sucking the gas sucked downward from the substrate 4 through the gas suction port 5. For this reason, the gas suction part 22 is connected to the gas suction port 5.

  In the substrate holding device 101, the warp detection unit 25 includes a pressure gauge 23, a gas suction unit 22, and a gas suction port 5. That is, in the substrate holding device 101, the warp detection unit 25 includes the gas suction port 5. The distance d between the lower plate 3 and the substrate 4 is calculated from the pressure value of the gas sucked by the gas suction port 5. The warp of the substrate 4 is detected by comparing the plurality of distances d thus calculated.

  Gas is sucked by the gas suction part 22 and passes through the gas suction port 5 to suck the gas. The pressure gauges 23 and the gas suction units 22 are provided in the same number as the gas suction ports 5 corresponding to the respective gas suction ports 5. The suction pressure is measured by each pressure gauge 23, and the distance d between the lower plate 3 and the substrate 4 is calculated from the pressure value of the suction. From the distances d at a plurality of locations corresponding to the number of the gas suction ports 5 of the substrate 4. Warpage is detected. Here, the lower plate 3 has an upper main surface 3A and an opposite lower main surface 3B, and the substrate 4 has an upper main surface 4A and an opposite lower main surface 4B. Shall have. The distance d detected here is, for example, the vertical distance in the figure between the upper main surface 3A of the lower plate 3 and the lower main surface 4B of the substrate 4.

  The control unit 24 is connected to the gas supply unit 21. When the warpage of the substrate 4 is detected based on the measurement result of the warpage detection unit 25, the control unit 24 adjusts the amount of gas blown out from each of the blowout ports 1 according to the distance.

  That is, in order to adjust the distance d of the arrangement position of the gas suction port 5 based on the presence / absence of warpage and the information of the distance d, which is the measurement result of the warp detection unit 25 of the substrate 4 at a position directly above the gas suction port 5. The amount of blowout from the blowout port 1 is adjusted. Each of the plurality of air outlets 1 includes any one of the plurality of gas suction ports 5 corresponding to the position of the substrate 4 where the amount of warping (the distance d) is adjusted by adjusting the amount of gas blown therefrom. Is assigned. For this reason, the amount of blowout from the blowout port 1 corresponding to the gas suction port 5 can be adjusted based on the measurement result of the warp at the position of a certain gas suction port 5.

  Further, in the substrate holding device 101, the number of pressure gauges 23 and gas suction units 22 included in the warp detection unit 25 is preferably the same as the number of gas suction ports 5. Thereby, the distance from the lower plate 3 of the substrate 4 at the position corresponding to each gas suction port 5 can be individually measured using the pressure gauge 23. For this reason, the distance d between the substrate 4 and the lower plate 3 at a position adjacent to the outlet 1 can be easily adjusted by adjusting the levitation pressure measured by each of the plurality of pressure gauges 23. Accordingly, the amount of blowout from the plurality of blowout ports 1 can be adjusted at the same time, so that the warp of the substrate 4 can be more reliably corrected. In the present embodiment, the warpage detection unit 25 includes the pressure gauge 23 and the gas suction unit 22, but is not limited to this, and it is needless to say that the warpage detection unit 25 may have any mechanism for detecting warpage. .

  FIG. 4 is a cross-sectional view showing a guide portion of the substrate holding apparatus according to the first embodiment. In particular, FIG. 4A is a schematic cross-sectional view illustrating the whole of the guide portion of the substrate holding device 101 in particular. Referring to FIG. 4A, a guide portion is arranged on main surface 3A on the upper side of lower plate 3, for example. The guide portion corresponds to the plurality of, for example, three guides 2 described above. The guides 2 for correcting the positions to be arranged with respect to the lower plate 3 of the substrate 4 are provided so as to cover at least three places or more than half of the outer peripheral length of the substrate. Thereby, the board | substrate 4 is guide | induced by the dead weight of the board | substrate 4 so that it may be mounted on the taper-shaped part 2T which the guide 2 mentions later. By placing the substrate 4 in contact with the guide 2 in this way, the holding position of the substrate 4 can be uniquely fixed.

  That is, when holding the substrate 4, the substrate 4 floats so as to be spaced from each other with respect to the upper main surface 3 </ b> A of the lower plate 3, but the end of the substrate 4 faces the tapered portion 2 </ b> T of the guide 2. Placed in contact.

  FIG. 4B is a schematic enlarged cross-sectional view in which the dotted line IVB in the right part of FIG. 4A is enlarged. Referring to FIG. 4B, in the substrate holding device 101, the portion where the guide 2 comes into contact with the substrate 4 has a tapered shape as shown in FIG. That is, the guide 2 has a tapered portion 2T that is inclined with respect to the vertical direction. As shown in FIG. 4B, the tapered portion 2T has an inclination angle θ of 30 ° or more and 60 ° or less with respect to the vertical direction. However, the inclination angle θ here is not a state in which the inclination angle θ of the tapered portion 2T is changed by driving a piezoelectric element or the like in a substrate holding device 701 described later, but the main surface of the guide 2 (FIG. 4 ( It is an angle in a steady state in which the back surface constituting the lowermost part of the guide 2 of A) is stably placed so as to be in contact with the upper main surface 3A of the lower plate 3.

  The substrate 4 has a bevel portion 4BV at its end. By making the chamfering angle of the bevel portion 4BV of the substrate 4 the same as the inclination angle θ of the tapered portion 2T of the guide 2 (including an error within ± 5 °) and increasing the area when the substrate 4 contacts, Chipping, i.e., chipping, starting from the bevel portion 4BV of the substrate 4 and a region adjacent thereto is suppressed.

  When the height of the guide 2 is sufficiently high and the bevel portion 4BV of the substrate 4 that is levitated by the blown-out gas is held on the outlet 1 so as not to contact the tapered portion 2T, the lower plate The guide 2 that corrects the position of the substrate 4 on the substrate 3 contacts the substrate 4 when the substrate 4 vibrates or attaches and detaches, causing chipping of the substrate 4. On the other hand, if the height of the guide 2 is kept low, the substrate 4 falls off from the lower plate 3. With the structure as shown in FIG. 4, the substrate 4 can be held in a non-contact state in a stable state without damaging it.

  According to such a configuration, the pressure of the gas sucked by the gas suction unit 22 is measured by the pressure gauge 23, and the main surface above the lower plate 3 of the lower main surface 4B of the substrate 4 at the relevant part. The floating amount with respect to 3A is calculated. When the substrate 4 is warped, there is a difference in pressure measured by each gas suction unit 22. When the warp is detected, the warp of the substrate 4 is corrected by controlling the gas supply output of the gas supply unit 21 by the measured pressure. At this time, in the gas supply unit 21, the warp of the substrate 4 is corrected by controlling the value measured by the gas suction unit 22 to be constant among the plurality of measured points, and the vibration of the substrate 4 is corrected. Can be suppressed. The gas suction port 5 and the blowout port 1 may be arranged close to each other or may be arranged at a distance.

  More specifically, when the distance between the lower plate 3 and the substrate 4 is larger in the portion where the substrate 4 is warped than in the portion where there is no warpage, the portion determined to have a larger distance is the portion concerned. The amount of gas blown from the blowout port 1 is increased to increase the suction force to the substrate 4 to attract the substrate 4, and the distance between the lower plate 3 and the substrate 4 is equal to the distance of the portion without warping. It controls to become small until it becomes. When the distance between the lower plate 3 and the substrate 4 is smaller than the portion without warping, the amount of gas blown from the blowout port 1 of the portion is reduced for the portion determined to have a small distance. The distance between the lower plate 3 and the substrate 4 is controlled so as to be increased to a distance equivalent to the distance of the portion without warping while suppressing the suction force to 4. In general, the thinner the substrate thickness, the larger the amount of substrate warpage. However, if the substrate holding device 101 is used, the amount of warpage can be corrected so that the maximum amount of warpage is reduced to about 20 mm. Further, even when the warping direction of the substrate 4 is different in each region, as in the case where the warping direction is a concave direction in a partial region of the substrate 4 and the convex direction in another partial region, If the substrate holding device 101 is used, the warp can be controlled to be small.

  In this case, the gas supply unit 21 and the blowout port 1 are connected by a resin tube or the like, and the gas supply unit 21 is attached to the outside of the lower plate 3 having the blowout port 1. Accordingly, the lower plate 3 can be reduced in weight and size, and at the same time, a wide movable range can be secured by the flexibility of the resin tube. The inflow / outflow of gas is controlled by a solenoid valve or the like provided in the resin tube, and the output of the gas blown out from the outlet 1 is controlled by numerically controlling the solenoid valve or the like with respect to the value obtained from the pressure gauge 23. Can be changed.

  Similarly, the gas suction port 5 may be arranged separately from the gas suction unit 22. Also in this case, the gas suction unit 22 and the gas supply unit 21 are connected by a resin tube or the like, and the gas suction unit 22 is attached to the outside with respect to the lower plate 3 having the gas suction port 5. The effect by this is the same as the arrangement of the gas supply unit 21 and the outlet 1.

  Note that the gas suction unit 22 is not limited to this means, and may be a means for electromagnetically measuring, for example.

  In the substrate holding apparatus 101 described above, the warpage detection unit 25 is configured by the gas suction unit 22, the pressure gauge 23, and the gas suction port 5. However, the warpage detection unit 25 is configured by using, for example, a laser distance measurement mechanism. It doesn't matter. FIG. 5 is a schematic diagram showing a substrate holding unit of the substrate holding apparatus according to the second example of the first embodiment of the present invention. FIG. 5 also shows a substrate holding part of the substrate holding apparatus according to the third example of the first embodiment below. FIG. 6 is a configuration diagram of a second example of the substrate holding apparatus of the present embodiment including a cross section of a portion along the line AA of the substrate holding unit shown in FIG.

  With reference to FIGS. 5 and 6, the substrate holding apparatus 102 of the second example of the present embodiment basically has the same configuration as that of the substrate holding apparatus 101, and thus the same components are denoted by the same reference numerals. I will not repeat the explanation. However, the substrate holding device 102 is configured by a mechanism including a pair of laser semiconductors (LD) and a light receiving element (PD). That is, the substrate holding device 102 includes a distance measuring mechanism in which the warpage detection unit 25 includes a laser semiconductor 31, a light receiving element 32, and mirrors 33 and 34. Therefore, the warp detection unit 25 of the substrate holding device 102 includes the laser semiconductor 31, the light receiving element 32, the mirrors 33 and 34, and the gas suction port 5.

  In the substrate holding device 102, the distance d between the lower plate 3 and the substrate 4 is set such that the laser light LL emitted from the laser semiconductor 31 is projected onto the substrate 4 and is received by the light receiving element 32 of the laser light LL reflected from the substrate 4. It is calculated by detecting the amount of received light. The laser beam LL redirected from the laser semiconductor 31 toward the substrate 4 by the mirror 33 is projected onto the substrate 4 from the same position as the gas suction port 5, and the laser beam LL reflected by the substrate 4 is received by the light receiving element 32. To do. Here, the position where the laser beam LL is incident on the substrate 4 is the same position as that of the gas suction port 5, but the position is not limited to this, and any position where the warpage of the substrate 4 can be detected is possible.

  The distance to the substrate 4 can be measured from the phase shift difference between the received laser beam LL and the projected laser beam LL, or the amount of image shift of the light that is split and imaged by the light receiving lens or the like. That is, the distance d between the lower plate 3 and the substrate 4 can be measured by detecting the amount of deviation between the laser light LL that has passed through the path L1 and the laser light LL that has passed through the path L2. Here, the path L1 is a path that passes from the laser semiconductor 31 in the order of the mirror 33, the mirror 34, the mirror 33, and the light receiving element 32. The path L2 is the path from the laser semiconductor 31 to the mirror 33, the substrate 4, the mirror 33, and the light receiving element. This is a route passing in the order of 32. Accordingly, the warpage can be accurately detected, and the gas supply pressure is controlled using the detected warpage of the substrate 4 to control the amount of gas blown out of each blowout port 1 to correct the warpage of the substrate 4. By doing so, the vibration of the substrate 4 can be suppressed.

  Such a substrate holding device 102 in which the laser semiconductor 31 and the light receiving element 32 are made of semiconductor elements has an advantage that it can be made smaller and lighter than the substrate holding device 101 having a gas suction mechanism. At the same time, the substrate holding device 102 is less economical than the substrate holding device 101 and is economical. However, the optical distance measuring means using the light receiving element 32 is not limited to this means, and for example, a method of measuring a time difference between light projection and light reception using pulsed light may be used. With respect to these optical distance measuring means, there is an advantage that the distance to the substrate 4 at the laser projection and reception positions can be measured in a non-contact and instantaneous manner.

  In the present embodiment, a distance measuring mechanism using the capacitance between the guide 2 and the substrate 4 may be used. FIG. 7 is a configuration diagram of the substrate holding apparatus of the third example of the present embodiment including a cross section of a portion along the line AA of the substrate holding portion shown in FIG.

  Referring to FIG. 7, the substrate holding apparatus 103 of the third example of the present embodiment basically has the same configuration as that of the substrate holding apparatus 101. Do not repeat. However, in the substrate holding device 103, the warp detection unit 25 includes a distance measuring mechanism having a capacitance meter 41. Therefore, the warp detection unit 25 of the substrate holding device 103 includes the capacitance meter 41 and the gas suction port 5.

  In the substrate holding device 103, electrical conductivity is measured between the substrate 4 and an electrode portion (not shown) connected to the guide 2 in contact with the lower plate 3 by the capacitance meter 41, and the gas between the substrate 4 and the guide 2 is measured. Capacitance is measured. That is, among the plurality of guides 2, the guide 2 that is in contact with the substrate 4 by placing the substrate 4 does not generate a capacitance between the guide 4 and the substrate 4. On the other hand, among the plurality of guides 2, for the guide 2 in which the substrate 4 is not in contact with the guide 2 and the substrate 4 is floating with respect to the guide 2, the capacitance is detected between the substrate 4 and the guide 2. Is done. Since it can be determined that the substrate 4 is warped with respect to the guide 2 at the position of the guide 2 where the electrostatic capacitance is detected, the lower plate 3 and the substrate 4 in the region where the guide 2 is disposed therefrom. The distance d can be calculated.

  In FIG. 7, the capacitance meter 41 is installed at the same position as the gas suction port 5, that is, at a position adjacent to the gas suction port 5. However, the position of the capacitance meter 41 is not limited to this, and may be a position where the capacitance between the guide 2 and the substrate 4 can be measured and the warpage of the substrate 4 in that region can be detected therefrom. Anywhere. Since this electrostatic capacity depends on the distance between the guide portion and the substrate 4, the distance from the electrode to the substrate 4 at the electrode position can be measured in a non-contact manner. At the same time, the distance measuring mechanism of the substrate holding device 103 is configured only by a mechanism for measuring a potential difference between an electrode (not shown) and the substrate 4, so that it is smaller than the gas suction mechanism that the substrate holding device 101 has. -There is an advantage that a lightweight mechanism can be realized. At the same time, the substrate holding device 103 is less economical than the substrate holding device 101 and is economical.

  Here, although there is a part which overlaps with the above, the effect of Embodiment 1 etc. are demonstrated collectively.

  Since the warpage of the substrate 4 is detected by the warpage detection unit 25 and the blowout amount is controlled by the control unit 24, the vibration of the substrate 4 held on the lower plate 3 without contact is suppressed. For this reason, generation | occurrence | production of the chipping etc. resulting from the back surface and outer periphery of the board | substrate 4 contacting the guide 2 can be suppressed. At this time, the surface of the guide 2 in contact with the substrate bevel portion is inclined with respect to the vertical direction in a steady state where the guide 2 is stably placed on the main surface 3A of the lower plate 3 as shown in FIG. The substrate 4 and the guide 2 have a structure including a tapered portion 2T having an angle of 30 ° or more and 60 ° or less. The friction between the lower portion of the bevel portion 4BV of the substrate 4 and the surface of the guide 2 causes the substrate 4 and the guide 2 to Fixed to contact. For example, when fixing or correcting the position of the substrate end with a so-called centering guide or a guide extending in the vertical direction without taper, the contact area with the guide 2 is reduced depending on the shape of the end of the substrate 4 and local stress is generated. Cracks are likely to occur. The angle of the taper-shaped portion 2T is adjusted so as to be substantially equal to the chamfering angle that is the angle of the cross-section of the bevel portion 4BV of the substrate 4, whereby the taper-shaped portion 2T of the bevel portion 4BV comes into contact with the taper-shaped portion 2T. The occurrence of chipping and the like can be prevented. Therefore, there is no problem even if the substrate 4 is held in contact with the guide 2.

  In this case, the bevel portion 4BV refers to the chamfered portion of the end portion of the substrate 4. Further, the guide 2 is provided so as to cover the outer periphery in accordance with the shape of the substrate 4. The inner ring diameter of the guide 2 is smaller than the diameter of the substrate 4 to be transported, and the contact portion with the bevel portion 4BV of the guide 2 is at a position higher than the outlet 1 by the flying height relative to the lower plate 3 of the substrate 4. is there. Thus, the guide 2 can fix the substrate 4 so as to contact only the end portion of the substrate 4 without contacting the chip effective area on the front surface or the back surface of the substrate 4. In addition, since the substrate 4 is placed as described above, there is no fear that a load is applied to the bevel portion 4BV from the horizontal direction to the crystal axis direction, so that chipping or the accompanying substrate cracking hardly occurs. Further, when the substrate 4 is transported up and down, the bevel portion 4BV is not lost due to the frictional force that comes into contact with the guide 2, so that the substrate 4 is also held in contact with the guide 2 from this viewpoint. There is no problem. At the same time, the position of the substrate 4 can be guided to the center of the lower plate 3 by guiding the position on the guide 2 where the substrate 4 is to be placed by the tapered portion 2T of the guide 2.

  The guide 2 does not cover the entire outer periphery (edge) of the substrate 4 (is in contact with the entire region), but has a structure in which the outer periphery of the substrate is partially fixed, or a cut or hole is provided in the lower plate 3 and the guide 2. Thus, a passage for the gas supplied from the gas supply unit 21 may be secured.

  The guide 2 is made of fluorine or other resin and ceramic. However, when the guide 2 is made of a resin, since it changes plastically in terms of diameter, it is more preferably made of a harder material such as PCTFE than PTFE. Similarly, the gas suction unit 22 and the gas supply unit 21 are made of fluorine-based or other resin and ceramic. As a result, it is possible to suppress the friction of the guide 2 with the substrate 4 from becoming excessively larger than a desired magnitude, and to suppress damage to the substrate 4.

  In the present embodiment, a warp detection unit 25 that detects the warp of the substrate 4, and a gas supply pressure that provides a Bernoulli effect according to the value of the distance d between the lower plate 3 and the substrate 4 detected by the warp detection unit 25. By providing a mechanism for controlling the vibration, the vibration due to the warp of the substrate 4 can be suppressed. At the same time, by providing the guide 2 of the tapered portion 2T, the substrate 4 is guided by its own weight to the center of the guide 2 which is a position on the guide 2 where the substrate 4 is to be placed, and then the substrate 4 is fixed by the guide 2 can do. Thereby, the chip of the effective area of the substrate 4 can be held without being damaged. Further, when the substrate 4 is delivered, it is possible to prevent the end portion of the substrate 4 from coming into contact with the guide 2 excessively more than the desired strength and causing chipping.

  In addition, for example, in an optical device or a power device, there is a risk of causing a dielectric breakdown due to heat due to an overcurrent and seriously damaging the device. On the other hand, in the present embodiment, the substrate 4 is fixed so as to be in contact with the tapered portion 2T of the guide 2, thereby suppressing the charging of the substrate 4 and damaging the circuit due to an overcurrent generated in the substrate 4. Can be reduced.

  In addition, for example, as a generally known comparative example, there is an example in which image data from a CCD camera is used as means for detecting warpage of the substrate 4. With this means, it takes time to acquire and analyze an image, and it can be said that it is difficult to grasp a precise warped shape. At the same time, when a series of photoengraving processes is performed in the back surface processing step (S8) of FIG. 1, the dark part cannot be brightened for photographing, and it is difficult to acquire an image with a CCD camera. In order to measure the distance d, gas pressure is used as in the substrate holding device 101, laser light LL is used as in the substrate holding device 102, or a capacitance meter is used as in the substrate holding device 103. In addition, the amount of warpage can be accurately obtained without being affected by environmental and equipment restrictions such as dark areas and viewing angles.

  In particular, according to the distance measuring mechanism using the gas pressure as in the substrate holding device 101, the laser is applied to the surface of the substrate 4 that transmits the laser light as compared with the distance measuring mechanism using the laser light as in the substrate holding device 102. Scattering of the light can eliminate the possibility of causing problems such as damage to the pattern on the surface of the substrate 4. The same applies to the substrate holding device 103 using a capacitance meter.

  In particular, according to the substrate holding device 101 using gas pressure and the substrate holding device 102 using laser light, the measurement accuracy of the substrate 4 on which an insulating film such as a resin film is formed can be further increased. In the substrate holding device 103 using the capacitance meter, there is a possibility that the measurement accuracy may be lowered by measuring the capacitance of the insulating film portion, but according to the substrate holding devices 101 and 102, such a possibility is possible. This is because sex can be excluded.

Embodiment 2. FIG.
FIG. 8 is a schematic diagram showing a substrate holding part of the substrate holding apparatus according to the second embodiment. FIG. 9 is a configuration diagram of the substrate holding device according to the second embodiment including a cross section of a portion along the line IX-IX of the substrate holding portion.

  Referring to FIGS. 8 and 9, substrate holding device 201 of the present embodiment basically has the same configuration as that of substrate holding device 101. Do not repeat. However, the substrate holding device 201 is different from the substrate holding device 101 in the position where the gas suction port 5 is arranged. In the first embodiment, the gas suction port 5 is arranged in the lower plate 3, but as shown in FIG. 9, it may be installed on the surface side of the substrate 4, that is, on the upper side of the substrate 4 in FIG. 9.

  Specifically, the substrate holding device 201 further includes an upper plate 10 disposed on a position opposite to the lower plate 3 with respect to the substrate 4, that is, on the upper side. In the substrate holding device 201, the gas suction port 5 is provided in the upper plate 10. That is, as shown in FIGS. 8 and 9, the surface side of the substrate 4 is a position facing the lower plate 3 across the substrate 4, and an upper plate 10 with the gas suction port 5 is provided on the surface side of the substrate 4. It is done. Note that the upper plate 10 is supported by a member (not shown) constituting the substrate holding device 201 so that the upper plate 10 can be arranged so as to be spaced from the substrate 4 in the vertical direction of FIG.

  As a result, although slightly different from the figure, for example, even when a facility having a rotating shaft such as a spinner is provided in the center of the lower plate 3 in plan view, the gas is positioned at a position overlapping the center of the substrate 4 of the upper plate 10 in plan view. A suction port 5 can be provided. For this reason, the complicated curvature shape of the board | substrate 4 can be detected, such as the bending | deflection and curvature by the dead weight of a thin board | substrate in the center part in planar view of the board | substrate 4. FIG. Further, if the upper plate 10 is movable in the vertical direction so that the gas suction port 5 approaches the surface of the substrate 4, the warped shape of the substrate 4 can be detected more reliably.

  As shown in FIG. 9, as in the first embodiment, the outer peripheral portion (end portion) of the substrate 4 is placed and fixed so as to be in contact with the guide 2. The surface of the guide 2 in contact with the bevel portion 4BV of the substrate 4 has a structure of a tapered portion 2T formed of a smooth surface having an inclination angle of about 30 ° to 60 ° with respect to the vertical direction in a steady state. It is made of fluorine or other resin and ceramic. Similarly, the gas suction port 5 and the blow-out port 1 are made of fluorine-based or other resin and ceramic. Thereby, the guide 2 can suppress friction with the substrate 4.

  Even if the mechanism of the warp detection unit 25 is a method of measuring the distance d when the substrate 4 is not in contact with the lower plate 3 by laser, electrostatic capacity, electromagnetic means, or the like, as in the first embodiment. I do not care. In the present embodiment, the parts different from the first embodiment have been described. The other parts are the same as those in the first embodiment.

Embodiment 3 FIG.
FIG. 10 is a schematic diagram showing a substrate holding part of the substrate holding apparatus according to the third embodiment. FIG. 11 is a configuration diagram of the substrate holding device according to the third embodiment including a cross section of a portion along the line XI-XI of the substrate holding portion.

  Referring to FIGS. 10 and 11, substrate holding device 301 of the present embodiment has basically the same configuration as that of substrate holding device 101. Do not repeat. However, the substrate holding device 301 is different from the substrate holding device 101 in that it further includes a handle portion 9 fixed to the lower plate 3.

  That is, the difference between the present embodiment and the first embodiment is that the substrate holding device 301 is used as an air tweezer for handling the substrate 4. A handle portion 9 is further attached to the substrate holding device 301 so that an operator can carry the substrate 4 while holding the substrate 4 on the lower plate 6 for air tweezers in a non-contact manner.

  In the substrate holding device 301, the lower plate 6 for air tweezers is composed of a plurality of (two) annular lower plates 6A and 6B having an annular shape in plan view. The diameter of the annular shape of the annular lower plate 6B is larger than that of the annular lower plate 6A. The annular lower plate 6B is concentrically arranged outside the annular lower plate 6A and spaced apart from the annular lower plate 6A in the radial direction. The number of annular lower plates arranged concentrically is not limited to this, and may be three or more, for example. The lower plate 6 includes a plurality of (three) radial lower plates 6C, 6D, and 6E in addition to the annular lower plates 6A and 6B. The radial lower plates 6C, 6D, 6E are portions that extend radially from the center of the annular shape of the annular lower plates 6A, 6B in the radial direction of the annular lower plates 6A, 6B. The number of the radial lower plates extending radially is not limited to this, and may be three or more, for example. In FIG. 10, the angle formed by the radial lower plates 6C, 6D, and 6E is about 120 degrees, but the angle is not limited to this. In the present embodiment, among the lower plates 6 for air tweezers, on the outermost portions of the radial lower plates 6C, 6D, 6E that are farthest from the center of the annular shape of the annular lower plates 6A, 6B, A guide 2 is placed. Then, the substrate 4 is placed in contact with the tapered portion 2T of the guide 2.

  Similarly to the radial lower plates 6C to 6E, the handle 9 extends radially from the center of the annular shape of the annular lower plates 6A and 6B in the radial direction of the annular lower plates 6A and 6B in plan view. The handle portion 9 extends longer in the radial direction of the annular lower plates 6A and 6B than the radial lower plates 6C to 6E. For this reason, the whole substrate holding device 301 or at least the part of the distance measuring mechanism can be carried by grasping the region of the handle portion 9 away from the annular lower plates 6A and 6B.

  In this embodiment, a switch 8 for operating (ON / OFF) gas suction for measuring gas inflow / outflow and substrate warpage is provided in the handle portion 9, and the substrate 4 can be operated with one hand by operating the button of the switch 8. Can be fixed to the substrate holding device 301, that is, held by the substrate holding device 301, and the substrate 4 can be conveyed.

  According to the configuration of the present embodiment, the outlets 1 can be provided concentrically not only outside the substrate 4 but also near the center. That is, for example, in the lower annular plate 6A arranged closest to the center of the substrate 4 among the concentric annular lower plates, the blowout port 1 is provided similarly to the lower annular plate 6B. In other words, the plurality of outlets 1 of the present embodiment are constituent members of the lower plate 6 arranged concentrically with the center of the lower plate 6 as a common center when the lower plate 6 is viewed in plan. It arrange | positions so that it may become the positional relationship which gets on each of a certain some annular | circular lower plate 6A, 6B. The plurality of gas suction ports 5 are also arranged so as to be placed on the respective lower annular plates 6A, 6B arranged concentrically as in the case of the blowout port 1.

  Thereby, for example, as compared with the configuration in which the single annular lower plate 3 is provided only in a relatively outer region of the substrate 4 and the blowout port 1 and the gas suction port 5 are provided there as in the first embodiment. The deflection on the center side of the substrate 4 can also be measured. That is, according to the configuration of the present embodiment, the blowout port 1 and the gas suction port 5 are provided concentrically near the center of the substrate 4, so that the substrate 4 is warped in the same direction (for example, a direction along an annular shape). In addition, the deflection generated in the plane (including the central portion) of the substrate 4 can also be measured, and the vibration can be suppressed in response to the warp extending concentrically.

  Specifically, in the substrate holding device 301 of FIG. 10, as an example, six blowout ports 1 are provided on the surface of the lower plate 6, and 6 gas suction ports 5 for detecting warpage of the substrate 4 are provided therebetween. There are places. Each of the blowout port 1 and the gas suction port 5 is disposed on each of the lower circular plates 6A and 6B at a position where the angle with respect to the center of the annular shape is 120 ° apart. In addition, as shown in FIG. 10, a part of the gas suction ports 5 may be formed at a position overlapping the handle portion 9. Note that the number of outlets 1 is not limited to this if the floating pressure of the substrate 4 satisfies the required amount. In a thin substrate where the thickness of the substrate 4 is 200 μm or less, not only warping in one direction (for example, the direction along the circumferential direction of the ring) but also partial warping concentrically due to droop due to its own weight or film stress occurs. There is a high possibility of doing. By providing the blowout port 1 and the gas suction port 5 in each of the plurality of concentric members as in the present embodiment, the warpage of the concentric annular lower plates 6A and 6B is caused. Vibration can be suppressed. In addition, since the guide 2 and the gas supply unit 21 are close to each other, the effect of holding the substrate 4 so as to be fixed is enhanced.

  When the substrate holding device 301 is used as an air tweezer, the conveyance direction is hardly linearly fixed at a constant speed, and thus it is required to securely fix the substrate 4 to the lower plate 6. Therefore, if the warpage is corrected including the in-plane (annular radial direction) by using a mechanism capable of measuring the warpage uniformly from the center side to the outside of the substrate 4 as in the present embodiment, the thin substrate can be obtained. There is an advantage that scratches and chipping on the back surface and outer periphery of the substrate 4 due to vibration of the substrate 4 can be suppressed by holding the substrate 4 uniformly and preventing gas turbulence. According to this configuration, the blow-out port 1 or the gas suction port 5 is disposed separately from the gas supply unit 21 and the gas suction unit 22 as in the first embodiment, and is connected by a resin tube therebetween. At this time, since the resin tube is accommodated in the handle portion 9, the lower plate 3 can be reduced in size and weight, so that the substrate 4 can be handled easily.

  Even if the mechanism of the warp detection unit 25 is a method of measuring the distance d when the substrate 4 is not in contact with the lower plate 3 by laser, electrostatic capacity, electromagnetic means, or the like, as in the first embodiment. I do not care. Similarly to the first embodiment, the surface of the guide 2 that contacts the bevel portion 4BV of the substrate 4 has a taper shape of approximately 30 ° to 60 ° with respect to the vertical direction as shown in the sectional view of the guide 2 shown in FIG. It has a structure including part 2T, and is made of fluorine-based or other resin and ceramic. Similarly, the gas suction port 5, the blowout port 1, and the gas supply unit 21 are also made of fluorine or other resin and ceramic. In the present embodiment, the parts different from the first embodiment have been described. The other parts are the same as those in the first embodiment.

Embodiment 4 FIG.
FIG. 12 is a schematic diagram showing a substrate holding part of the substrate holding apparatus according to the fourth embodiment. FIG. 13 is a configuration diagram of the substrate holding apparatus according to the fourth embodiment including a cross section of a portion along the line XIII-XIII of the substrate holding portion.

  Referring to FIGS. 12 and 13, substrate holding device 401 of the present embodiment has basically the same configuration as that of substrate holding device 101. Do not repeat. However, the substrate holding device 401 has a flat plate-like lower plate 7, and the lower plate 7 has a substantially entire surface in plan view, that is, almost the entire region overlapping the region where the substrate 4 to be installed is disposed. A plurality of air outlets 1 and gas suction ports 5 are arranged at intervals. For this reason, compared with the case where the blowout ports 1 and the like are formed only in the annular lower plate 3 as in the first embodiment, the number is larger, and on the surface of the flat plate-like lower plate 7 in FIG. The thirteen air outlets 1 are provided, and 12 gas suction ports 5 for detecting warpage of the substrate 4 are provided therebetween. However, the number of outlets 1 is not limited to this if the floating pressure of the substrate 4 satisfies a certain required amount. According to this configuration, the blowout port 1 or the gas suction port 5 may be disposed separately from the gas supply unit 21 and the gas suction unit 22 as in the first embodiment. In this case, it has the structure which connected between them with the resin-made tubes. In FIG. 12, the flat plate-like lower plate 7 has a rectangular shape, but may have a disk shape.

  Also in the substrate holding device 401, as in the substrate holding device 301, when the lower plate 7 is viewed in plan, the plurality of outlets 1 have the center of the entire lower plate 7 as a common center (here, virtual ) You may arrange | position so that it may become the positional relationship which rides on each of several concentric circles. The plurality of gas suction ports 5 also ride on each of a plurality of (virtual) concentric circles (for example, the lower annular plates 6A and 6B) having the same center as the center of the lower plate 6 as in the blowout port 1. Arranged so as to be in a positional relationship.

  For example, in the substrate holding apparatus 101 according to the first embodiment, the lower plate 3 has an annular shape that does not include the center of the circular shape in consideration of conveyance between facilities having a rotation axis such as a spinner when the substrate 4 is conveyed. Thus, the blowout port 1 is not provided at the circular central portion of the lower plate 3. However, in the present embodiment, the blowout port 1 and the gas suction port 5 are provided in almost the entire area of the flat lower plate 7 in plan view. In the case of conveyance between units such as a rotating shaft that are not limited by facilities (for example, between bake units), the blowout port 1 can be laid over the entire surface of the lower plate 7.

  For example, in FIG. 13, the outlet 1 is laid concentrically and uniformly in the center and the outer periphery of the lower plate 7, and the guide 2 is provided in the same manner as in the first embodiment, so that the substrate expands concentrically, that is, circularly. 4 can be detected to further suppress the vibration of the substrate 4. In particular, in the thin substrate 4 in which the thickness of the substrate 4 is 200 μm or less, not only warping in one direction (for example, a direction along the circular circumferential direction), but also warpage and sagging spread concentrically due to drooping by its own weight or film stress. Probability is high. Therefore, by adopting the configuration of the present embodiment, for example, the single annular lower plate 3 is provided only in a relatively outer region of the substrate 4 as in the first embodiment, and the air outlet 1 and the gas suction are provided there. Compared with the configuration in which the mouth 5 is provided, the deflection on the center side of the substrate 4 can also be measured. That is, according to the configuration of the present embodiment, the blowout port 1 and the gas suction port 5 are provided concentrically near the center of the substrate 4, so that the substrate 4 is warped in the same direction (for example, a direction along an annular shape). In addition, the deflection generated in the plane (including the central portion) of the substrate 4 can also be measured, and the vibration can be suppressed in response to the warp extending concentrically. For this reason, there is an advantage that damages due to gas turbulence and vibration are less likely to occur. Further, even when the blowout port 1 and the gas suction port 5 are not concentric in a plan view but are arranged on the entire flat lower plate 7 (not shown), the entire warp of the substrate 4 is also performed. Therefore, the vibration of the substrate 4 can be further suppressed.

  In the substrate holding device 401, the gas suction port 5 is provided in the same plane as the blowout port 1. However, the gas suction port 5 may be provided in the surface of the upper plate 10 facing the substrate 4 as in the second embodiment. The mechanism of the warp detection unit 25 may be a distance measuring method configured by a laser, capacitance, electromagnetic means, or the like as in the first embodiment.

  As in the first and second embodiments, the surface of the guide 2 that contacts the bevel portion 4BV of the substrate 4 is approximately 30 ° or more with respect to the vertical direction as shown in the sectional view of the guide 2 shown in FIG. The guide 2 has a structure composed of a tapered portion having an inclination angle θ of less than or equal to 0 °, and the guide 2 is made of fluorine or other resin and ceramic. Similarly, the gas suction unit 22 and the gas supply unit 21 are made of fluorine-based or other resin and ceramic. In the present embodiment, the parts different from the first embodiment have been described. The other parts are the same as those in the first embodiment.

Embodiment 5. FIG.
FIG. 14 is an enlarged schematic cross-sectional view showing, in particular, a guide portion of the substrate holding apparatus according to the fifth embodiment. Referring to FIG. 14, substrate holding apparatus 501 of the present embodiment has basically the same configuration as that of substrate holding apparatus 101. Therefore, the same components are denoted by the same reference numerals and description thereof will not be repeated. However, the substrate holding device 501 is different from the substrate holding device 101 in the mechanism in which the guide 2 corrects the position of the substrate 4.

  Specifically, in the substrate holding device 501, the guide unit, that is, the guide 2 includes the fluid ejection port 13. And the said guide 2 correct | amends the position in the planar view of the board | substrate 4 by ejecting the edge ejection fluid 12 to the board | substrate 4 from the fluid ejection port 13. FIG.

  The fluid ejection port 13 is formed so as to extend in a direction along the radial direction of the guide 2 such as the substrate 4 in a plan view. That is, the edge ejection fluid 12 that has traveled through the fluid ejection port 13 is ejected from the outer side (the side opposite to the substrate 4) in the radial direction toward the inner side (the substrate 4 side). The edge ejection fluid 12 may be the same type as or different from the gas blown from the blowout port 1.

  In the substrate holding device 501 having the above configuration, the substrate 4 is moved by the same principle as that when the substrate 4 is floated from the lower plate 3 by the gas from the blow-out port 1, that is, by the Bernoulli effect by the swirling flow of the edge jet fluid 12. The substrate is held by the substrate holding device 501 so as to float without contact with the guide 2. Further, although the substrate 4 is not in contact with the guide 2, its position can be corrected as in the other embodiments.

  In summary, in this embodiment, instead of the guide 2 provided in the first to fourth embodiments, the edge from the fluid outlet 13 provided in the guide to the edge portion, that is, the end portion of the substrate 4 as shown in FIG. A structure for correcting the position of the substrate 4 by ejecting the ejected fluid 12 is provided. Thereby, since it is not necessary to fix the board | substrate 4 with the frictional force by the contact with the guide 2 like said other embodiment, the damage to the board | substrate 4 can be reduced further. On the other hand, the edge jetting fluid 12 may cause the substrate 4 to lose balance and fall off, causing vibration and scratching on the back surface.

  Therefore, in the substrate holding device 501 of the present embodiment, the vibration of the substrate 4 is suppressed by any of the methods of the first to fourth embodiments by combining the configurations of the first to fourth embodiments. is necessary. In this state, the position of the substrate 4 is corrected by the repulsive force caused by the fluid, and the end portion of the substrate 4 does not contact the fluid ejection port 13, for example. 14 ejects fluid from the end of the substrate 4 toward the center of the substrate 4, but the ejection direction is not limited to this. In addition, in this Embodiment, the part different from Embodiment 1-4 was demonstrated. The other parts are the same as those in the first to fourth embodiments.

Embodiment 6 FIG.
FIG. 15 is a schematic diagram showing a substrate holding part of a substrate holding apparatus according to Embodiment 6 of the present invention. FIG. 15 also shows a substrate holding part of the substrate holding apparatus according to the following seventh and eighth embodiments. FIG. 16 is a configuration diagram of the substrate holding apparatus according to the sixth embodiment including a cross section of a portion along the line BB of the substrate holding portion shown in FIG.

  Referring to FIGS. 15 and 16, substrate holding device 601 of the present embodiment has basically the same configuration as substrate holding device 101. Do not repeat. However, in the substrate holding device 601, the guide 2 is movable on the upper main surface 3A of the lower plate 3 along a radial direction extending radially from the center when the lower plate 3 is viewed in plan. That is, when the horizontal direction in FIG. 16 is the radial direction, the guide 2 can move in the direction indicated by the arrow M in the figure.

  By having such a configuration, the position of the guide 2 can be changed according to the size of the substrate 4 fixed on the guide 2 in plan view. That is, even when the inch size of the substrate 4 to be held is changed or the end of the substrate 4 is isotropically etched by processing such as wet etching, the outer diameter of the substrate 4 is reduced as described above. The substrate 4 can be held by bringing the end portion into contact with the tapered portion 2T.

  Also, by having such a configuration, the position of the guide 2 can be adjusted so that the substrate 4 does not move up and down when the tapered portion 2T contacts the substrate 4. Thereby, for example, the guide 2 can be adjusted to an optimum position so that the floating pressure of the substrate 4 is constant in each gas suction portion 22 and the tapered portion 2T is appropriately in contact with the substrate 4.

  A driving method related to the direction indicated by the arrow M of the guide 2 will be described. As shown in FIG. 16, in the substrate holding device 601, a pulse motor 51 is provided in the guide 2, and the guide 2 can be driven in the direction of arrow M by driving the pulse motor 51. The pulse motor 51 is connected to the capacitance meter 41 and, like the substrate holding device 103 of the third example of the first embodiment, detects the capacitance due to the fact that the guides 2 and the substrate 4 do not contact each other. The control unit 24 drives the pulse motor 51 to move the guide 2. By repeating the movement of the guide 2 and the detection of the capacitance, in the guide 2 in which the capacitance is detected, the guide 2 and the substrate 4 are brought into contact with the guide 2 and the substrate 4 are brought into contact with each other. Until the guide 2 moves. By such a method, it is possible to hold the substrate 4 in any size or state by appropriately moving the guide 2.

Embodiment 7 FIG.
FIG. 17 is a configuration diagram of the substrate holding apparatus according to the seventh embodiment including a cross section of a portion along the line BB of the substrate holding portion shown in FIG.

  Referring to FIG. 17, substrate holding device 701 of the present embodiment has basically the same configuration as substrate holding device 101, and therefore the same components are denoted by the same reference numerals and description thereof will not be repeated. However, in the substrate holding device 701, for example, the main surface of the guide 2 is separated from the main surface 3A on the upper side of the lower plate 3, so that the inclination angle α of the tapered portion 2T with respect to the vertical direction is within a range of 10 ° to 60 °. The guide 2 can be driven so that it can be changed.

  As described above, the inclination angle of the tapered portion 2T is 30 ° or more and 60 ° or less with respect to the vertical direction in the original steady state. However, when this rotates and the inclination angle α changes, the state can be changed to be within a range of 10 ° to 60 °.

  By having such a configuration, for example, even if the inclination angle of the chamfering angle of the bevel portion 4BV of the substrate 4 held by the substrate holding device 701 changes due to a change in grinding conditions or the like, the inclination angle of the tapered portion 2T is changed. By adjusting, the inclination angle of the tapered portion 2T can be set to an angle corresponding to the angle of the changed bevel portion 4BV. For this reason, the contact area of the bevel part 4BV of the board | substrate 4 and the taper-shaped part 2T of the guide 2 can be taken large, and the board | substrate 4 can be fixed more stably.

  A driving method for tilting the guide 2 as described above will be described. As shown in FIG. 17, in the substrate holding device 701, a piezo element 52 is provided on the guide 2, and the back surface of the guide 2 is partially floated from the upper main surface 3 </ b> A of the lower plate 3 by driving the piezo element 52. Can be rotated and tilted. As shown in FIG. 17, the rotation amount of the piezo element 52 can be adjusted by a variable voltage 53 and a resistor 54 connected thereto.

Embodiment 8 FIG.
FIG. 18 is a configuration diagram of the substrate holding apparatus according to the eighth embodiment including a cross section of a portion along the line BB of the substrate holding portion shown in FIG.

  Referring to FIG. 18, substrate holding device 801 of the present embodiment has basically the same configuration as that of substrate holding device 101. Therefore, the same components are denoted by the same reference numerals, and description thereof will not be repeated. However, the substrate holding device 801 further includes a heater 61 as a heating mechanism capable of heating the guide 2.

  For example, when the substrate 4 immediately after being heated by the sputtering process and the baking process is held by the substrate holding device 101 of the first embodiment, the thin film formed on the main surface 4A on the upper side of the substrate 4 and the base The underlying substrate 4 may greatly warp due to the difference in thermal expansion coefficient between the substrate 4 and the constituent material. In this case, if the substrate is held by the substrate holding device, the temperature of the substrate decreases during that time. For example, the formed thin film contracts, so that the film stress on the substrate 4 changes, and the substrate 4 dynamically It may be deformed. For this reason, holding | maintenance of the board | substrate 4 becomes unstable and there exists a possibility that a crack and a crack may arise. In order to avoid this, there is a method in which the substrate 4 that has been subjected to the heat treatment is placed on standby in a chamber or the like with a cooling time until it reaches room temperature. However, the tact time of the process becomes long, and the processing capability is significantly reduced.

  Therefore, it is preferable to use a substrate holding device 801 having a heater 61 as a heating mechanism in the guide 2 as in the present embodiment. Since the guide 2 is held in contact with the outer peripheral portion of the substrate 4, the outer periphery of the substrate 4 where heat radiation proceeds first among the substrates 4 fixed in contact with the guide 2 is actively increased to a temperature of about 80 ° C. to 150 ° C. Can be heated. Thereby, the big deformation | transformation of the board | substrate 4 in holding the board | substrate 4 can be avoided.

  The above means is not limited as long as at least the outer peripheral portion of the substrate 4 is heated and the influence of the warp of the substrate 4 due to cooling can be avoided. For example, a configuration capable of heating the outer peripheral portion of the substrate 4 by ejecting a heated fluid onto the substrate 4 may be used as the heating mechanism.

  You may apply so that the characteristic described in each embodiment described above (each example contained in) may be combined suitably in the range with no technical contradiction.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  1 Outlet, 2 Guide, 3 Lower plate, 4 Substrate, 5 Gas suction port, 6 Lower plate for air tweezers, 6A, 6B Circular lower plate, 6C, 6D, 6E Radial lower plate, 7 Flat plate lower plate , 8 switch, 9 handle part, 10 upper plate, 12 edge ejection fluid, 13 fluid ejection port, 21 gas supply part, 22 gas suction part, 23 pressure gauge, 24 control part, 25 warpage detection part, 31 laser semiconductor, 32 Light receiving element, 33, 34 mirror, 41 capacitance meter, 51 pulse motor, 52 piezo element, 53 variable voltage, 54 resistance, 61 heater, 101, 102, 103, 201, 301, 401, 501, 601, 701 801 A substrate holding device.

In order to solve the above problems, a substrate holding apparatus according to the present invention detects a lower plate, a plurality of outlets for blowing gas to the substrate in order to hold the substrate on the lower plate in a non-contact manner, and warpage of the substrate. A warpage detection unit and a control unit that adjusts the amount of each of the plurality of outlets based on the measurement result of the warpage detection unit. A guide portion capable of fixing the position of the substrate is fixed to the lower plate. The guide part has a tapered part inclined with respect to the vertical direction. The inclination angle of the tapered portion with respect to the vertical direction is not less than 30 ° and not more than 60 °. The guide portion can be driven such that the main surface of the guide portion is separated from the main surface of the lower plate and the inclination angle of the tapered portion can be changed within a range of 10 ° to 60 °.

Claims (12)

A lower plate,
A plurality of outlets disposed on the lower plate and spraying gas onto the substrate to hold the substrate in a non-contact manner;
A warp detection unit for detecting warpage of the substrate;
Based on the measurement result of the warp detection unit, a control unit for adjusting the amount of gas blown out of each of the plurality of outlets;
A substrate holding device comprising:
A guide portion capable of fixing the position of the substrate is disposed on the lower plate, and the guide portion has a tapered shape portion inclined with respect to the vertical direction,
The tapered portion has an inclination angle of 30 ° or more with respect to the vertical direction of the main surface of the lower plate in a state where the main surface of the guide portion is placed so as to be in contact with the main surface of the lower plate. A substrate holding device that is less than or equal to °.   The substrate holding apparatus according to claim 1, wherein the warpage detection unit detects the warpage of the substrate based on a plurality of distances between the lower plate and the substrate. The warpage detection unit includes a distance measuring mechanism having a laser semiconductor and a light receiving element,
The substrate holding apparatus according to claim 2, wherein the distance is calculated from an amount of light received by the light receiving element of the laser light projected from the laser semiconductor onto the substrate and reflected from the substrate. The warpage detection unit includes a distance measuring mechanism having a capacitance meter,
The substrate holding apparatus according to claim 2, wherein the distance is calculated from a capacitance of a gas between the substrate and the guide unit being measured by the capacitance meter. The warpage detection unit includes a gas suction port,
The substrate holding apparatus according to claim 2, wherein the distance is calculated from a pressure value of gas sucked at the gas suction port. An upper plate disposed at a position opposite to the lower plate with respect to the substrate;
The substrate holding device according to claim 5, wherein the gas suction port is provided in the upper plate.   The board | substrate holding apparatus of any one of Claims 1-6 further provided with the handle part fixed to the said lower board.   The plurality of outlets are arranged so as to be in a positional relationship to ride on each of a plurality of concentric circles having the center of the lower plate as a common center when the lower plate is viewed in plan. The substrate holding device according to claim 1. The guide portion includes a fluid ejection port,
The substrate holding device according to claim 1, wherein the guide unit corrects the position of the substrate by ejecting edge ejection fluid from the fluid ejection port onto the substrate.   The substrate holding device according to claim 1, wherein the guide portion is movable along a radial direction extending radially on the main surface of the lower plate.   The guide portion can be driven such that the main surface of the guide portion is separated from the main surface of the lower plate, and the inclination angle of the tapered portion can be changed within a range of 10 ° to 60 °. The substrate holding device according to claim 1.   The substrate holding device according to claim 1, further comprising a heating mechanism capable of heating the guide portion.

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