JPWO2016080003A1 - Solid-state image sensor - Google Patents

Abstract

Each of the plurality of visible light transmission / near infrared cut filters (8) and the same number of near infrared transmission / visible light cut filters (9) are associated with each of the plurality of photodiode impurity layers (2). Are two-dimensionally distributed.

Description

  The present invention relates to a solid-state imaging device in which a plurality of photoelectric conversion regions, which are regions that generate charges by photoelectrically converting received light, are provided on a semiconductor substrate.

  As a conventional solid-state imaging device capable of performing both visible light imaging and near-infrared light imaging, an element as disclosed in Patent Document 1 has been proposed. As shown in FIGS. 14A and 14B, the conventional solid-state imaging device is a conventional primary color filter array [100 G for two G (green) pixel filters, B (blue) pixels. One of the G pixel filters of 1008B filter for one pixel and 1008R filter for one R (red) pixel arranged in a checkered pattern] is replaced with a near infrared light filter (IR) 1009. It was. Further, like the solid-state imaging device 2000 shown in FIGS. 15A and 15B, all the vertical columns of the conventional complementary color filter array (8 pixels) 2008M, 2008C, 2008Y, 2008G are filters for near infrared light. (IR) Some were 2009.

  An example of an imaging system that acquires a visible light image and a near-infrared light image in a solid-state imaging device in which a near-infrared light filter is added to these primary color / complementary color filters will be briefly described with reference to FIG. When a visible light image is captured with a conventional element, light is irradiated onto the object to be imaged from a visible light source 1200 (which may be more appropriate to express as a normal light source because it includes near infrared wavelengths) The output signals of R, G, and B output from an element obtained by photographing the image with the conventional solid-state imaging device 1000 or 2000 include information photoelectrically converted at a wavelength in the near infrared region ( (Because conventional photodiodes and R / G / B filters have sensitivity in the near-infrared wavelength region). For this reason, conventionally, an image is constructed by performing a process of subtracting information of IR pixels, which are pixels provided with a filter that transmits only light in the near-infrared wavelength region, from information of R, G, and B outputs.

  On the other hand, when acquiring a near-infrared light image, the near-infrared light source 1100 irradiates a subject with near-infrared light, and images are taken with all the pixels of the solid-state imaging device 1000 or 2000 to construct an image ( As described above, R, G, and B pixels also have sensitivity in the near infrared wavelength region). The case of the complementary color filter shown in FIG. 15A is also the same image construction method except that the number of pixels is different from that of the filter array, so that the description thereof is omitted here. Since the image is acquired by the above-described method, when a visible light image is acquired, an image is constructed using information of 3/4 pixels for the primary color and 2/3 pixels for the complementary color, and near-infrared light is acquired. It can be seen that the image is acquired by using all pixel information.

  As a supplementary explanation, in the case of a conventional solid-state imaging device that uses only visible light, an IR (infrared) cut filter is provided between the imaging device chip and the imaging optical system, so that the above-mentioned near red There is no need to worry about photoelectric conversion with outside light. Further, an imaging system that can acquire a near-infrared light image using a normal solid-state imaging device without using the solid-state imaging device 1000 or 2000 as shown in FIG. 14 or FIG. 15 has been proposed.

  In addition, as shown in FIG. 17, an imaging system provided with two imaging elements, that is, a solid-state imaging element 4000 for visible light and a solid-state imaging element 3000 for near-infrared light. An element provided with a cut filter 4009 and an apparatus that captures images with an element provided with a bandpass filter 3008 (transmitting only light of a specific IR wavelength) in an optical system have been proposed for obtaining near-infrared light images. In the example shown in FIG. 18, there is one solid-state imaging device 5000, but a filter switching mechanism is provided in the imaging optical system so that the IR cut filter 4009 and the bandpass filter 3008 can be switched to perform shooting. Proposed.

  In addition, as in the technique disclosed in Patent Document 2, an optical system that irradiates light from a light source device to a subject to be photographed is provided with a mechanism for switching an IR cut filter or a band pass filter. .

  For example, when the human body is imaged with near-infrared light using such an imaging system, as described in Patent Document 1, hemoglobin in blood vessels (blood) and others Since the absorption and reflection characteristics of the near-infrared light of the human tissue are different, it is possible to obtain blood vessel pattern information of the human body photographed. In addition, for a visible light photographed image, for example, when a palm is photographed, a palm print (palm) pattern of each person can be obtained. By using this together with vein (artery) authentication, individual identification accuracy can be improved. Can be increased. In addition, near-infrared light photography cannot completely photograph only blood vessels, and information such as surrounding tissues is included to some extent. In order to alleviate these problems, there is a case where an image photographed with near-infrared light and an image photographed with visible light are subjected to image processing so as to make only blood vessel information stand out.

Japanese Patent Publication “Japanese Patent Laid-Open No. 2005-191748 (published July 14, 2005)” Japanese Patent Publication “JP-A-4-357926 (published on Dec. 10, 1992)”

  Here, when the image pickup system shown in FIGS. 17 and 18 or the image pickup system disclosed in Patent Document 2 is used, it is necessary to prepare two systems of solid-state image pickup devices and optical systems, or for filter switching. There may be a need for a retreat space for a filter that is not used with a mechanical mechanism. In this case, it is impossible to downsize the mobile phone camera system, and it can be said that it is very disadvantageous in terms of cost.

  As described above, in the imaging system using the solid-state imaging device 1000 or 2000 shown in FIG. 14 or 15 and the solid-state imaging device 1000 or 2000 of the conventional example shown in FIG. Thus, a system capable of capturing both a visible light image and a near-infrared light image has been proposed. However, in the imaging system using the solid-state imaging device 1000 or 2000 of the conventional example shown in FIG. 16, when acquiring a visible light image, an image is constructed by subtracting IR pixel information from all pixel information, When acquiring a near-infrared light image, since it is necessary to construct | assemble an image using the information of all the pixels, (a)-(e) of FIG. 23 and (a)-(e) of FIG. Both the visible light image and the near-infrared light image are acquired at the same time as in the comparison diagram shown in FIG. 25 and the comparison diagrams shown in FIGS. 25A to 25E and FIG. 26A to 26E. I couldn't. (A) to (e) of FIG. 23 are operations when imaging is performed by irradiating visible light with a 1.3 million pixel full readout CCD imaging device (effective pixel number: horizontal 1280 pixels × vertical 960 pixels), respectively. FIGS. 24A to 24E show the flow of operations when the CCD imaging device irradiates near infrared light and performs imaging. On the other hand, (a) to (e) in FIG. 25 show the flow of operations when an image is taken with an IR cut filter in the CCD image pickup device, respectively, and (a) to (e) in FIG. These show the flow of operation | movement at the time of image-capturing, putting a visible light cut filter (visible light cut, infrared transmission) in the said CCD image pick-up element, respectively.

  In the authentication image of veins (arteries), it is more accurate to perform the process of subtracting the information of the visible light image from the near-infrared light image to make only the blood vessel information of the imaged object stand out. Will be possible. However, the visible light image obtained by the conventional solid-state imaging device 1000 or 2000 is formed from information of 3/4 pixels (2/3 pixels in the case of complementary colors), and the visible light image itself is Since it was created by processing with a near-infrared light image, there was a problem that the image processing for vein (artery) authentication would be very complicated.

  The present invention has been made in view of the above problems, and is a solid-state imaging device that simplifies image processing and enables simultaneous acquisition of both a visible light image and a near-infrared light image. The purpose is to provide.

  In order to solve the above problems, a solid-state imaging device according to one embodiment of the present invention is a solid-state imaging device in which a plurality of photoelectric conversion regions, which are regions that generate charges by photoelectrically converting received light, are provided on a semiconductor substrate. A plurality of visible light photographing color filters and the same number of near infrared light photographing color filters are associated with each of the plurality of photoelectric conversion regions in a two-dimensional manner. It is characterized by being arranged in a distributed manner.

  According to one aspect of the present invention, it is possible to simplify image processing and to enable simultaneous acquisition of both a visible light image and a near-infrared light image.

  Other objects, features, and advantages of the present invention will be fully understood from the following description. The advantages of the present invention will become apparent from the following description with reference to the accompanying drawings.

It is a figure for demonstrating the structure of the solid-state image sensor which concerns on Embodiment 1 of this invention, (a) is a figure which shows the mode of a filter arrangement | sequence when the said solid-state image sensor is seen from the incident side of light. (B) is sectional drawing of the AA 'cross section shown to (a). It is a schematic diagram which shows schematic structure of the imaging system containing the solid-state image sensor which concerns on the said Embodiment 1. FIG. It is a figure for demonstrating the complementary method of visible light pixel information, and the complementary method of infrared light pixel information regarding the said solid-state image sensor. (A) And (b) is a figure which shows the modification of the arrangement | positioning method of a filter, respectively. It is a figure for demonstrating an example of the variation of the transmission wavelength setting of each filter in the solid-state image sensor which concerns on Embodiment 1 of this invention, (a) is sectional drawing which shows the structure of the cross section of the said solid-state image sensor. , (B) and (c) are graphs showing the optical characteristics of the filter, respectively, and (d) and (e) are graphs showing the optical characteristics of the pixels, respectively. It is a figure for demonstrating the other example of the variation of the transmission wavelength setting of each filter in the solid-state image sensor which concerns on Embodiment 1 of this invention, (a) is sectional drawing which shows the structure of the cross section of the said solid-state image sensor. (B) and (c) are graphs showing the optical characteristics of the filter, and (d) and (e) are graphs showing the optical characteristics of the pixels, respectively. It is a figure for demonstrating another example of the variation of the transmission wavelength setting of each filter in the solid-state image sensor concerning Embodiment 1 of the present invention, and (a) is a section showing the section structure of the above-mentioned solid-state image sensor. FIGS. 2B and 2C are graphs showing the optical characteristics of the filter, and FIGS. 2D and 2E are graphs showing the optical characteristics of the pixels, respectively. It is a figure for demonstrating another example of the variation of the transmission wavelength setting of each filter in the solid-state image sensor concerning Embodiment 1 of the present invention, and (a) is a section showing the section structure of the above-mentioned solid-state image sensor. FIGS. 2B and 2C are graphs showing the optical characteristics of the filter, and FIGS. 2D and 2E are graphs showing the optical characteristics of the pixels, respectively. It is sectional drawing for demonstrating the formation method (or material and structure) of the solid-state image sensor which concerns on Embodiment 2 of this invention. It is sectional drawing for demonstrating the formation method (or material and structure) of the solid-state image sensor which concerns on Embodiment 3 of this invention. It is sectional drawing for demonstrating the formation method (or material and structure) of the solid-state image sensor which concerns on Embodiment 4 of this invention. (A) is a figure which shows the film thickness of each layer which comprises an inorganic filter, (b) is a graph which shows the simulation result of the transmittance | permeability of the multilayer film of an inorganic filter. The electron micrograph of the actually produced inorganic multilayer filter is shown. It is a figure for demonstrating the structure of the solid-state image sensor which concerns on the prior art example 1, (a) is a figure which shows the mode of the filter arrangement | sequence when the said solid-state image sensor is seen from the incident side of light, (b ) Is a cross-sectional view taken along the line BB ′ shown in FIG. It is a figure for demonstrating the structure of the solid-state image sensor which concerns on the prior art example 2, (a) is a figure which shows the mode of a filter arrangement | sequence when the said solid-state image sensor is seen from the incident side of light, (b ) Is a cross-sectional view taken along the line CC ′ shown in FIG. It is a schematic diagram which shows operation | movement of the example of 1 structure of the conventional solid-state imaging system. It is a schematic diagram which shows operation | movement of another structural example of the conventional solid-state imaging system. It is a schematic diagram which shows operation | movement of another structural example of the conventional solid-state imaging system. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure for demonstrating the structure of the CMOS type solid-state image sensor which concerns on Embodiment 1 of this invention, (a) is a figure which shows the mode of a filter arrangement | sequence when the said solid-state image sensor is seen from the incident side of light. (B) is a cross-sectional view of the BB ′ cross section shown in (a). It is sectional drawing for demonstrating the formation method (or material and structure) of the solid-state image sensor which concerns on Embodiment 5 of this invention. It is sectional drawing for demonstrating the formation method (or material and structure) of the solid-state image sensor which concerns on Embodiment 6 of this invention. It is a schematic diagram which obtains a desired transmitted light wavelength using a two-layer filter. (A)-(e) is a comparison figure which respectively shows the operation | movement for outputting visible light data with a solid-state imaging system. (A)-(e) is a comparison figure which respectively shows the operation | movement for outputting infrared light data with a solid-state imaging system. (A)-(e) is a comparison figure which respectively shows the operation | movement for outputting visible light data with a solid-state imaging system. (A)-(e) is a comparison figure which respectively shows the operation | movement for outputting infrared light data with a solid-state imaging system. (A)-(e) is a figure which shows the operation | movement for outputting visible light data and infrared light data, respectively with the solid-state imaging system of this invention.

  The embodiment of the present invention will be described with reference to FIGS. Hereinafter, for convenience of explanation, components having the same functions as those described in the specific embodiment may be denoted by the same reference numerals and description thereof may be omitted.

Embodiment 1
FIG. 1 is a diagram for explaining the configuration of a solid-state imaging device 100 according to Embodiment 1 of the present invention. FIG. 1A is a diagram illustrating a filter arrangement when the solid-state imaging device 100 is viewed from the light incident side. FIG. 1B is a cross-sectional view taken along the line AA ′ shown in FIG.

  FIG. 2 is a schematic diagram illustrating a schematic configuration of an imaging system including the solid-state imaging device 100 according to Embodiment 1 of the present invention. As shown in the figure, the imaging system of the present embodiment includes a solid-state imaging device 100, a near-infrared light source 101, and a visible light source 102. Moreover, the imaging system of this embodiment irradiates near-infrared light from the near-infrared light source 101 and visible light from the visible light source 102 simultaneously to the imaging target (for example, a hand), thereby making visible light An image and a near-infrared light image can be output simultaneously.

  The solid-state imaging device 100 is not an interlaced readout, but an imaging device [CMOS (Complementary metal-oxide semiconductor) type imaging device or CCD (Charge-coupled) that can read out all pixels as shown in FIGS. device) has a function as an all-pixel readout type CCD]. 27A to 27E respectively irradiate both visible light and near-infrared light with a 1.3 million pixel full readout CCD image sensor (effective pixel number: horizontal 1280 pixels × vertical 960 pixels). The operation when shooting is shown. 23 (a) to (e) and FIG. 24 (a) to (e), and FIG. 25 (a) to (e) and FIG. 26 (a) to (e). As will be described later, the image processing for obtaining information on all the pixels of the visible light image or the near-infrared light image can be performed more easily and faster than the comparison diagram shown in FIG. Further, the solid-state imaging device 100 is mainly used for biometric authentication, and is capable of constructing an imaging system for biometric authentication with high speed and high accuracy.

  Next, as shown in FIG. 1B, the solid-state imaging device 100 includes a silicon substrate (semiconductor substrate) 1, a photodiode impurity layer (photoelectric conversion region) 2, a charge transfer portion impurity layer 3, a gate electrode 4, Shading film 5, silicon insulating film 6, flattening film 7, visible light transmission / near infrared cut filter (color filter for visible light photography) 8, near infrared transmission / visible light cut filter (near infrared light photography) Color filter) 9 and a condensing microlens 10. Note that the configurations of the gate electrode 4, the light shielding film 5, the silicon insulating film 6, the planarizing film 7, and the condensing microlens 10 are not related to the essence of the present invention, and thus the description thereof is omitted here. .

(Silicon substrate 1)
The silicon substrate 1 is a semiconductor substrate having one conductivity based on silicon. Here, one conductivity is either p-type conductivity or n-type conductivity.

(Photodiode impurity layer 2, charge transfer portion impurity layer 3)
Inside the silicon substrate 1, a plurality of photodiode impurity layers 2 that are regions that generate charges by photoelectrically converting received light, and a plurality of charge transfer units that are regions to which the generated charges are transferred Impurity layer 3 is formed.

(Visible light transmission / near infrared cut filter 8, near infrared transmission / visible light cut filter 9)
In the solid-state imaging device 100 of the present embodiment, each of the plurality of visible light transmission / near-infrared cut filters 8 and the same number of near-infrared transmission / visible light cut filters 9 includes the plurality of photodiode impurity layers 2. They are two-dimensionally distributed in association with each other (the total number of pixels is about 1.3 million pixels). For this reason, when acquiring information on all the pixels of the visible light image, information on pixels (hereinafter referred to as “near infrared light pixels”) associated with a specific near-infrared transmission / visible light cut filter 9 is used. It is possible to complement by using information of pixels (hereinafter referred to as “visible light pixels”) associated with the visible light transmission / near infrared cut filter 8 distributed in the vicinity thereof. In addition, when acquiring information on all pixels of a near-infrared light image, information on a specific visible light pixel may be supplemented using information on infrared light pixels arranged in the vicinity thereof. It becomes possible. As described above, the image processing can be simplified, and both the visible light image and the near infrared light image can be simultaneously acquired.

  More specifically, as shown in FIG. 1A, each of the visible light transmission / near infrared cut filter 8 and the near infrared transmission / visible light cut filter 9 is collected on the photodiode impurity layer 2. In the portion between the light microlenses 10, they are arranged alternately (for example, in a checkered pattern). Thereby, when acquiring information on all pixels of the visible light image, information on a specific near-infrared light pixel can be supplemented using information on visible light pixels arranged on the top, bottom, left, and right of the pixel. It becomes possible. In addition, when acquiring information on all pixels of a near-infrared light image, information on a specific visible light pixel may be supplemented using information on infrared light pixels arranged on the top, bottom, left, and right of the pixel. It becomes possible. Therefore, compared to a configuration in which the color filter for visible light photography and the color filter for near infrared light photography are not arranged alternately, the information of all pixels of the visible light image or the near infrared light image is obtained. The image processing for obtaining can be simplified.

  In the present embodiment, the visible light transmission / near infrared cut filter 8 is an IR (infrared) cut filter (for example, cuts light having a wavelength of 700 nm or more), and the near infrared transmission / visible light cut filter 9 is a visible light cut filter. An example in which light having a wavelength shorter than 700 nm is cut (for example) is described.

(About image processing)
FIG. 3 shows an example of output signal processing when the present invention is applied to a CCD solid-state image sensor having a total pixel number of 1.3 megapixels. In the above-described embodiment, the visible light transmission / near infrared cut filter 8 and the near infrared transmission / visible light cut filter 9 are alternately arranged (for example, checkered pattern). Visible light pixel information and near infrared light information are alternately output from pixels close to. In the case of a visible light image, the information that was a near-infrared light pixel with respect to the total number of pixels of 1.3 million is calculated from the visible light pixel information of the upper, lower, left, and right four pixels and complemented as visible light pixel information. Here, “visible light pixel information” is voltage information photoelectrically converted in the visible light pixel, and “information that was a near-infrared light pixel” means that the near-infrared light pixel is arranged. It is the pixel information that is supplemented by using the visible light image information of the upper, lower, left, and right. In the case of a near-infrared light image, with respect to the total number of pixels of 1.3 million pixels, the information that was a visible light pixel is calculated from the information of the near-infrared light pixels of the upper, lower, left, and right four pixels, Supplement as information. By performing the processing as described above, an image of 1.3 million pixels of visible light and 1.3 million pixels of near-infrared light can be obtained by relatively simple information processing of pixels. Here, the “near-infrared light pixel information” is voltage information photoelectrically converted by the near-infrared light pixel, and the “information that was a visible light pixel” is the position where the visible light pixel is arranged. This is pixel information that is complemented by using near-infrared light image information on the top, bottom, left, and right.

  More specific processing includes using pixel information obtained from a plurality of visible light pixels adjacent to the near-infrared light pixel, and complementing the pixel information of the near-infrared light pixel to complement all pixels related to visible light. Get information. For example, in the example shown in FIG. 3, the pixel information of the near-infrared light pixel is complemented by using the average value of the visible light images adjacent to the top, bottom, left and right of the near-infrared light pixel. According to the above configuration, it is possible to perform image processing for obtaining information on all pixels of a visible light image with higher accuracy.

  Similarly, by using pixel information acquired from a plurality of near-infrared light pixels adjacent to the visible light pixel, the pixel information of the visible light pixel is complemented to obtain all pixel information related to the near-infrared light. To get. For example, in the example illustrated in FIG. 3, pixel information of the visible light pixel is supplemented using an average value of near-infrared light images adjacent to the visible light pixel in the vertical and horizontal directions. Thereby, the image processing process for obtaining the information of all the pixels of the near-infrared light image can be performed with higher accuracy.

(Modification of filter array)
Next, (a) and (b) of FIG. 4 are diagrams showing modifications of the arrangement method of each filter of the visible light transmission / near infrared cut filter 8 and the near infrared transmission / visible light cut filter 9, respectively. is there. The arrangement of the visible light pixels and the near-infrared light pixels is not particularly limited as long as half the total number of pixels is arranged, and the arrangement method shown in these drawings may be adopted. .

(Merit of checkered pattern arrangement)
However, the above-described checkered pattern arrangement of the visible light transmission / near infrared cut filter 8 and the near infrared transmission / visible light cut filter 9 has the following advantages.

  (1) The number of pixels that can be truly obtained by photoelectric conversion between the visible light image and the near-infrared light image is half the total number of pixels (for example, 1.3 million pixels). In order to obtain an image of 1.3 million pixels in each of the visible light image and the near-infrared light image, it is necessary to supplement the information of the near-infrared light pixel portion in the case of the visible light image. Therefore, calculation is performed from information on visible light pixels on the top, bottom, left, and right of a pixel to be complemented (in this case, a near-infrared light pixel). For this reason, in the case of the filter arrangement as shown in FIGS. 4A and 4B, it becomes impossible to process all pixel information by the same calculation, and the image construction process becomes more complicated. . Note that the pixel information construction on the outermost periphery of the pixel area is a different calculation even in the checkered pattern arrangement.

  (2) In terms of manufacturing process, in the case of the solid-state imaging device 100 of the present embodiment, there is a high possibility that the manufactured filter is particularly thick, particularly in the near-infrared pixel, the filter is thick, and the visible light pixel. Then, when forming a filter such that the filter is thin, there is a possibility that considerable unevenness may be formed on the element. The variation (irregularity) in the element structure causes unevenness in a later process, and the photographed image may be uneven during photographing. Therefore, it is preferable to suppress unevenness in the element structure as much as possible. In the case of the filter array as shown in FIGS. 4A and 4B, when viewed from the entire pixel area, there are places where there are many near-infrared pixels, places where there are many visible light pixels, and places where there are many visible light pixels. For this reason, there is a possibility of causing structural unevenness. Even when viewed from the entire pixel area, the visible light transmission / near infrared cut filter 8 and the near infrared transmission / visible light cut filter 9 are arranged in a checkered pattern like the solid-state imaging device 100 of the present embodiment. Since the arrangement is the same everywhere, the surface irregularities can be minimized.

  (3) The number of visible light pixels and the number of near-infrared light pixels may be equal to half the total number of pixels, respectively, so that all visible light pixels in all vertical columns and near-infrared pixels in all vertical columns are alternately arranged. It may be arranged. However, in the case of constructing a visible light image with such an arrangement, for example, the vertical column that was a near-infrared light pixel does not have any information obtained by truly photoelectrically converting visible light, and was obtained by calculation. Since it becomes information, there is a possibility that it is slightly disadvantageous in terms of resolution.

(Variation of transmission wavelength setting of each filter)
Next, variations in transmission wavelength setting of each filter will be described with reference to FIGS. 5 to 8 for the solid-state imaging device 100 according to Embodiment 1 of the present invention. Regarding the transmission wavelength setting of each filter, a visible light transmission / near infrared cut filter or a transparent filter (color filter for visible light photography as shown in FIGS. As a color filter for infrared light photography, a near-infrared transmission / visible light cut filter or a bandpass filter (transmits only light of a specific wavelength), an imaging system, an authentication system, Or you may comprise combining by selecting with the imaging | photography target object etc. which want to attach importance.

  FIG. 5 is a diagram for explaining the configuration of the solid-state imaging device 200a including an example of variations in transmission wavelength setting of each filter. In the solid-state imaging device 200a, a combination of a visible light transmission / near infrared cut filter (color filter for visible light photography) 68 and a near infrared transmission / visible light cut filter (color filter for near infrared light photography) 69 is used. Used. FIGS. 5B and 5C are graphs showing the optical characteristics of the filter, respectively. 5D and 5E are graphs showing the optical characteristics of the pixels, respectively.

  FIG. 6 is a diagram for explaining the configuration of the solid-state imaging device 200b including another example of other variations of the transmission wavelength setting of each filter. The solid-state imaging device 200b uses a combination of a transparent filter (color filter for visible light photography) 67 and a near-infrared transmission / visible light cut filter (color filter for near-infrared light photography) 69. 6B and 6C are graphs showing the optical characteristics of the filter, respectively. FIGS. 6D and 6E are graphs showing the optical characteristics of the pixels, respectively.

  The photodiode impurity layer 2 (formed by impure portion injection into the silicon substrate 1) of the visible light pixel has sensitivity not only in the visible light but also in the near-infrared wavelength region. In the case of a normal solid-state image sensor, an IR cut filter (made of a film that does not transmit light of near infrared wavelength or more) that cuts the wavelength of near infrared wavelength or more (about 800 nm or more) is provided in the imaging optical system. Although not a problem, when used for vein imaging, it is necessary to put light having a near infrared wavelength or more into the element.

  In the case of the transparent filter 67 that transmits light of all wavelengths, charges that are photoelectrically converted by visible light + near infrared light accumulate in the photodiode impurity layer 2 in the visible light pixel. When using the element of the present embodiment for vein authentication, from the vein image (constructed only with information photoelectrically converted with light of a wavelength of near infrared or more in an image constructed with information of near infrared pixels), To make a vein stand out by performing a process of subtracting a visible light image (an image constructed from information of visible light pixels, constructed from information photoelectrically converted from light of visible and near infrared wavelengths). Processing may be performed. In this case, the subtracted visible light image information includes information photoelectrically converted at the near infrared wavelength. Therefore, in order to make the vein image stand out, the visible light image information is photoelectrically converted at the near infrared wavelength or more. It is better not to include such information. Depending on the degree of authentication accuracy to be obtained, the visible light pixel can be formed easily and at a lower cost if the transparent light filter 67 is used, particularly when all wavelengths can be transmitted.

  FIG. 7 is a diagram for describing a configuration of a solid-state imaging device 200c including still another example of variations in transmission wavelength setting of each filter. The solid-state imaging device 200c uses a combination of a visible light transmission / near infrared cut filter (color filter for visible light photography) 68 and a bandpass filter (color filter for near infrared light photography) 70 (transmission at a specific wavelength). ing. (B) and (c) of FIG. 7 are graphs showing optical characteristics of the filter, respectively. FIGS. 7D and 7E are graphs showing the optical characteristics of the pixels, respectively.

  FIG. 8 is a diagram for explaining a configuration of a solid-state imaging device 200d including still another example of variations in transmission wavelength setting of each filter. The solid-state imaging device 200d uses a combination of a transparent filter (color filter for visible light photography) 67 and a bandpass filter (color filter for near-infrared light photography) 70 (specific wavelength transmission). (B) and (c) of FIG. 8 are graphs showing the optical characteristics of the filter, respectively. 8D and 8E are graphs showing the optical characteristics of the pixels, respectively.

  In the above-described embodiment, the case where the solid-state imaging device is used for vein imaging has been described. However, various proposals have been made when using an image captured at a specific wavelength, such as the bandpass filter 70 described above. (For example, plant / fruit growth status, food spoilage inspection, spot detection on human skin, etc.). When considering such an application, there is a possibility that the detection wavelength needs to be more peaky (photographed only with a more limited wavelength). Even in vein authentication, there is a possibility that the accuracy of authentication increases when the image is captured at a more limited wavelength. When the filter characteristics are limited, it is difficult to obtain the desired spectral characteristics only by forming a single-layer filter. As shown in FIG. 22, a hybrid filter structure in which two layers of organic filters and inorganic filters are provided. It is necessary to make it. Although the CCD has been described so far, the same configuration can be applied to the CMOS solid-state imaging device.

  FIG. 19 is a diagram for explaining a configuration of a CMOS solid-state imaging device 600 according to Embodiment 1 of the present invention. FIG. 19A is a diagram illustrating a filter arrangement when the solid-state imaging device 600 is viewed from the light incident side. FIG. 19B is a cross-sectional view of the B-B ′ cross section shown in FIG. As shown in FIG. 19B, the solid-state imaging device 600 includes a silicon substrate (semiconductor substrate) 101, a photodiode impurity layer (photoelectric conversion region) 102, a high concentration impurity layer 103, a gate electrode 104, a metal wiring 105, A visible light transmission / near infrared cut filter (color filter for visible light photography) 106, a near infrared transmission / visible light cut filter (color filter for near infrared light photography) 107, and a condensing microlens 108. Prepare. Note that the configuration of the gate electrode 104, the metal wiring 105, and the condensing microlens 108 has little relation to the essence of the present invention, and thus the description thereof is omitted here.

(Silicon substrate 101)
The silicon substrate 101 is a semiconductor substrate having one conductivity based on silicon. Here, one conductivity is either p-type conductivity or n-type conductivity.

(Photodiode impurity layer 102, high-concentration impurity layer 103)
Inside the silicon substrate 101, a plurality of photodiode impurity layers 102, which are regions that generate charges by photoelectrically converting received light, and a plurality of high-concentration impurity layers, which are regions to which the generated charges are transferred 103 is formed.

(Visible light transmission / near infrared cut filter 106, near infrared transmission / visible light cut filter 107)
In the solid-state imaging device 600 of this embodiment, each of the plurality of visible light transmission / near-infrared cut filters 106 and the same number of near-infrared transmission / visible light cut filters 107 are included in the plurality of photodiode impurity layers 102. Corresponding to each, they are two-dimensionally distributed and arranged. For this reason, when acquiring information on all pixels of a visible light image, information on pixels (hereinafter referred to as “near infrared light pixels”) associated with a specific near infrared transmission / visible light cut filter 108 is used. Further, it is possible to complement by using information of pixels (hereinafter referred to as “visible light pixels”) associated with the visible light transmission / near infrared cut filter 106 distributed in the vicinity thereof. In addition, when acquiring information about all the pixels of the near-infrared light image, the information about the specific visible light image may be supplemented using information about the infrared light pixels arranged in the vicinity thereof. It becomes possible. As described above, the image processing can be simplified, and both the visible light image and the near infrared light image can be simultaneously acquired.

  More specifically, as shown in FIG. 19A, each of the visible light transmission / near infrared cut filter 106 and the near infrared transmission / visible light cut filter 107 is formed on the photodiode impurity layer 102. In the portion between the condensing microlenses 108, they are arranged alternately (for example, in a checkered pattern). Thereby, when acquiring information on all pixels of the visible light image, information on a specific near-infrared light pixel can be supplemented using information on visible light pixels arranged on the top, bottom, left, and right of the pixel. It becomes possible. In addition, when acquiring information on all pixels of a near-infrared light image, information on a specific visible light pixel may be supplemented using information on infrared light pixels arranged on the top, bottom, left, and right of the pixel. It becomes possible. Therefore, compared to a configuration in which the color filter for visible light photography and the color filter for near infrared light photography are not arranged alternately, the information of all pixels of the visible light image or the near infrared light image is obtained. The image processing for obtaining can be simplified.

[Embodiment 2: Forming method (or material / structure) of each color filter 1]
Next, FIG. 9 is a cross-sectional view for explaining a method (or material / structure) for forming the solid-state imaging device 300 according to Embodiment 2 of the present invention. This figure shows the case where an organic material such as acrylic or the like is mixed only with an organic material mixed with a pigment or dye having a characteristic of absorbing light of a specific wavelength and a photosensitive material for patterning. In the case of a filter, only acrylic materials and photosensitive materials are shown. In the example shown in the figure, both a visible light filter (color filter for photographing visible light) 88 and a near infrared light filter (color filter for photographing near infrared light) 89 are both organic filters (organic films). 2 shows an example in which a film in which a material that absorbs light of a specific wavelength is mixed is used.

  In the case of an organic filter, as described above, a pigment or dye material that absorbs a specific wavelength in an organic material and a photosensitive material for pattern formation are generally used. The filter can be formed in a relatively simple process because it can be formed by spin coating, pattern formation (pattern exposure), and development. However, if the ground irregularities previously formed are large, spin coating can be performed. There is a demerit that unevenness is likely to occur.

[Embodiment 3: Forming method (or material / structure) of each color filter 2]
Next, FIG. 10 is a cross-sectional view for explaining a method (or material / structure) for forming a solid-state imaging device 400 according to Embodiment 3 of the present invention. As in the example shown in the figure, there is a case where it is formed only of an inorganic material having a characteristic of reflecting a specific wavelength by a thin film laminated structure of materials having different refractive indexes. In the example shown in the figure, both a visible light filter (visible light color filter) 90 and a near infrared light filter (near infrared light color filter) 91 are both inorganic filters (inorganic films). In this example, the laminated structure is formed of a film that reflects light of a specific wavelength. However, in the case of an inorganic filter, it can be formed in the normal first half of the semiconductor manufacturing process, but because it has a laminated structure of about 10 thin films, its film formation / etching process is difficult. There is a demerit that the unevenness of the element becomes very large.

  12 (a) and 12 (b), when this inorganic filter is formed by stacking a silicon oxide film and a silicon nitride film, the number of stacked layers, the film thickness of each layer, and the wavelength in the stacked structure 2 shows an example of the light transmittance characteristics. Thus, by selecting the refractive index of the laminated film, the number of laminated layers, and the film thickness, an inorganic filter that transmits only light having a desired wavelength can be formed. An electron micrograph in which such an inorganic filter is actually formed is shown in FIG. 13 (in the figure, an example of a structural film different from the simulation results of FIGS. 12A and 12B) is shown.

[Embodiment 4: Forming Method (or Material / Structure) of Each Color Filter, Part 3]
Next, FIG. 11 is a cross-sectional view for explaining a method (or material / structure) for forming a solid-state imaging device 500 according to Embodiment 4 of the present invention. By using a hybrid structure using both the organic filter film and the inorganic filter film, the selection range of the transmission wavelength can be further expanded. In the example shown in the figure, a visible light filter (color filter for visible light photography) 88 and a near infrared light filter (color filter for near infrared light photography) 89 are respectively replaced with organic filters (organic films). And a film mixed with at least a material that absorbs light of a specific wavelength. In addition, a filter for visible light (color filter for photographing visible light) 90 and a filter for near infrared light (color filter for photographing near infrared light) 91 are respectively specified by inorganic filters (stacked structure of inorganic films). And a film that reflects light having a wavelength of 2).

[Embodiment 5: Method for forming each color filter (or material / structure) 4]
Next, FIG. 20 is a cross-sectional view for explaining a method (or material / structure) for forming a solid-state imaging device 700 according to Embodiment 5 of the present invention. By using a hybrid structure in which two or more organic filter films are stacked, the selection range of the transmission wavelength can be further expanded. In the example shown in the figure, a visible light filter (color filter for visible light photography) 110 and a near infrared light filter (color filter for near infrared light photography) 111 are respectively replaced with organic filters (organic films). And at least a material mixed with a material that absorbs light of a specific wavelength. Further, each of the visible light filter (visible light color filter) 112 and the near infrared light filter (near infrared light color filter) 113 is also an organic filter (at least an organic film). It is composed of a film mixed with a material that absorbs light of a specific wavelength.

[Embodiment 6: Forming method (or material / structure) of each color filter 5]
Next, FIG. 21 is a cross-sectional view for explaining a method (or material / structure) for forming a solid-state imaging device 800 according to Embodiment 6 of the present invention. By using a hybrid structure in which two or more layers of the inorganic filter film described above are stacked, the selection range of the transmission wavelength can be further expanded. In the example shown in the figure, a visible light filter (color filter for visible light photography) 120 and a near infrared light filter (color filter for near infrared light photography) 121 are each made of an inorganic filter (inorganic film). The layer structure is composed of a film that reflects light of a specific wavelength. Furthermore, each of the visible light filter (visible light color filter) 122 and the near-infrared light filter (near-infrared light color filter) 123 has an inorganic filter (laminated structure of inorganic films), respectively. By a film that reflects light of a specific wavelength.

  In reality, it is first considered whether the target spectrum can be obtained with a single-layer structure of an organic filter that can be easily formed. It is preferable to make the structure complicated to a hybrid structure of an inorganic filter and an inorganic filter (however, the above-mentioned problem of unevenness during spin coating can be improved to some extent).

  By realizing an imaging system including any of the solid-state imaging devices 100, 200a to d and 300 to 500 described above, high-speed and high-accuracy vein (artery) authentication is achieved with a simple (small) and low-cost imaging system. -A palm print authentication system can be constructed. In addition, security is improved by authenticating an individual from two pieces of biological information. In particular, since the vein information is invisible information, it is difficult to forge and the security can be further improved.

[Summary]
A solid-state imaging device according to aspect 1 of the present invention is a solid-state imaging device in which a plurality of photoelectric conversion regions, which are regions that generate charges by photoelectrically converting received light, are provided on a semiconductor substrate, A configuration in which each of the color filters for light photography and the same number of color filters for near-infrared light photography are two-dimensionally distributed in association with each of the plurality of photoelectric conversion regions. It is.

  According to the above configuration, each of the plurality of visible light photographing color filters and the same number of near infrared light photographing color filters are associated with each of the plurality of photoelectric conversion regions in a two-dimensional manner. It is distributed and arranged. For this reason, when acquiring information on all pixels of a visible light image, information on pixels associated with a specific color filter for near-infrared light imaging (hereinafter referred to as “near-infrared light pixels”) It is possible to complement by using information of pixels (hereinafter referred to as “visible light pixels”) associated with visible light photographing color filters arranged in the vicinity thereof. In addition, when acquiring information on all pixels of a near-infrared light image, information on a specific visible light pixel may be supplemented using information on infrared light pixels arranged in the vicinity thereof. It becomes possible. As described above, the image processing can be simplified, and both the visible light image and the near infrared light image can be simultaneously acquired.

  In the solid-state imaging device according to aspect 2 of the present invention, in the aspect 1, the visible color photographing color filter and the near infrared color photographing color filter are alternately arranged. preferable. According to the above configuration, when acquiring information on all pixels of a visible light image, information on a specific near-infrared light pixel is supplemented using information on visible light pixels arranged above, below, left, and right of the pixel. It becomes possible to do. In addition, when acquiring information on all pixels of a near-infrared light image, information on a specific visible light pixel may be supplemented using information on infrared light pixels arranged on the top, bottom, left, and right of the pixel. It becomes possible. Therefore, compared to a configuration in which the color filter for visible light photography and the color filter for near infrared light photography are not arranged alternately, the information of all pixels of the visible light image or the near infrared light image is obtained. The image processing for obtaining can be simplified.

  In the solid-state imaging device according to aspect 3 of the present invention, in the aspect 1 or 2, the visible light photographing color filter may be formed of a film that transmits light of all wavelengths. According to the said structure, manufacture is easy and cost reduction is realizable.

  In the solid-state imaging device according to aspect 4 of the present invention, in the aspect 1 or 2, the visible light photographing color filter may be formed of a film that does not transmit light having a near infrared wavelength or more. According to the above configuration, the visible light image information can be prevented from including information photoelectrically converted in the near-infrared wavelength or more, so that, for example, when performing vein image shooting, the vein image is more prominent. It becomes possible.

  Moreover, the solid-state imaging device according to Aspect 5 of the present invention is the film according to any one of Aspects 1 to 4, wherein the color filter for photographing near infrared light does not transmit light having a wavelength shorter than the near infrared wavelength. It may consist of. According to the above configuration, since it is possible to prevent the infrared light image information from containing photoelectrically converted information that is shorter than the near-infrared wavelength, for example, when performing vein image capturing, a more vein image Can be made to stand out.

  In the solid-state imaging device according to aspect 6 of the present invention, in any of the above aspects 1 to 4, the color filter for near-infrared light photography is configured by a film that transmits only light of a specific wavelength. May be. According to the above configuration, by appropriately setting the wavelength of light to be transmitted, a solid-state imaging device suitable for, for example, growing conditions of plants and fruits, food spoilage inspection, spot detection on human skin, and the like is realized. be able to.

  Moreover, the solid-state image sensor which concerns on aspect 7 of this invention in any one of the said aspects 1-6 WHEREIN: The said solid-state image sensor may be an element which can read all the pixels simultaneously. According to the above configuration, it is possible to perform image processing for obtaining information on all pixels of a visible light image or a near-infrared light image more easily and at a higher speed.

  The solid-state imaging device according to aspect 8 of the present invention is the above-described solid-state imaging device according to aspect 2, wherein the solid-state imaging device is adjacent to a pixel associated with the color filter for near-infrared light imaging. By using pixel information obtained from a plurality of pixels associated with the color filter, the pixel information of the pixels associated with the near-infrared color filter is complemented with visible light. It is also possible to use an element capable of obtaining all pixel information according to the above. According to the above configuration, it is possible to perform image processing for obtaining information on all pixels of a visible light image with higher accuracy.

  In the solid-state imaging device according to aspect 9 of the present invention, in the above-described aspect 2, the solid-state imaging device is used for the near-infrared light photographing adjacent to the pixel associated with the visible light photographing color filter. By using pixel information obtained from a plurality of pixels associated with the color filter, the pixel information of the pixels associated with the visible light color filter is complemented to obtain near-infrared light. It is also possible to use an element capable of obtaining all pixel information according to the above. According to the above configuration, it is possible to perform image processing for obtaining information on all pixels of the near-infrared light image with higher accuracy.

  Further, in the solid-state imaging device according to aspect 10 of the present invention, in the aspect 1 or 2, each of the color filter for visible light photography and the color filter for near-infrared light photography is at least specified as an organic film. It may be composed of a film mixed with a material that absorbs light having a wavelength of. According to the above configuration, the filter can be formed in a relatively simple process because it can be formed in each step of spin coating on the element (wafer), pattern formation (pattern exposure), and development.

  The solid-state imaging device according to aspect 11 of the present invention is the above-described aspect 1 or 2, wherein each of the visible light photographing color filter and the near-infrared light photographing color filter is a laminated structure of inorganic films. Therefore, it may be composed of a film that reflects light of a specific wavelength. According to the above configuration, the filter can be formed during the normal first half process of semiconductor manufacturing.

  In addition, in the method for manufacturing a solid-state imaging device according to aspect 12 of the present invention, in the aspect 1 or 2, each of the color filter for visible light photography and the color filter for near-infrared light photography is an organic film. Two layers in which a film mixed with at least a material that absorbs light of a specific wavelength and a film that reflects light of a specific wavelength by a laminated structure of inorganic films are combined using only one or both films You may be comprised with the above film | membrane. According to the above configuration, it is possible to form a filter that can obtain desired spectral characteristics.

  Further, in the method for manufacturing a solid-state imaging device according to aspect 13 of the present invention, in the aspect 1 or 2, each of the color filter for visible light photography and the color filter for near-infrared light photography is an organic film. Further, it may be configured by a laminated structure of two or more layers in which a material that absorbs light of a specific wavelength is mixed. According to the above configuration, it is possible to form a filter that can obtain desired spectral characteristics.

  The solid-state imaging device manufacturing method according to aspect 14 of the present invention is the above-described aspect 1 or 2, wherein each of the visible light photographing color filter and the infrared light photographing color filter is an inorganic film. You may be comprised by the laminated structure of the film | membrane 2 layer or more which reflects the light of a specific wavelength with a laminated structure. According to the above configuration, it is possible to form a filter that can obtain desired spectral characteristics.

[Another expression of the present invention]
The present invention can also be expressed as follows. That is, a solid-state imaging device according to one embodiment of the present invention includes a plurality of photoelectric conversion regions provided over a one-conductivity-type semiconductor substrate, and a unit that outputs photoelectrically converted charges to the outside as an electrical signal. In the element, a color filter for visible light photography and a color filter for near-infrared light photography may be arranged in a checkered pattern (staggered pattern).

  In addition to the above configuration, the solid-state imaging device according to another aspect of the present invention may be capable of reading all pixels instead of reading by interlace. In addition to the above-described configuration, the solid-state image sensor according to still another aspect of the present invention calculates the solid-state image sensor from visible light pixel information and near-infrared light pixel information from four adjacent upper, lower, left, and right pixels. Thus, all pixel information may be obtained by complementing it as visible light pixel information and near-infrared light pixel information.

[Additional information]
The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.

  INDUSTRIAL APPLICABILITY The present invention can be used for a solid-state imaging device in which a plurality of photoelectric conversion regions, which are regions that generate charges by photoelectrically converting received light, are provided on a semiconductor substrate.

1 Silicon substrate (semiconductor substrate)
2 Photodiode impurity layer (photoelectric conversion region)
8 Visible light transmission and near-infrared cut filter (color filter for visible light photography)
9 Near-infrared transmission / visible light cut filter (color filter for near-infrared light photography)
67 Transparent filter (color filter for visible light photography)
68 Visible Light Transmission / Near-Infrared Cut Filter (Color Filter for Visible Light Photography)
69 Near-infrared transmission / visible light cut filter (color filter for near-infrared light photography)
70 Bandpass filter (color filter for near-infrared light photography)
88 Visible light filter (color filter for visible light photography)
89 Near-infrared light filter (color filter for near-infrared light photography)
90 Visible light filter (color filter for visible light photography)
91 Near-infrared filter (color filter for near-infrared light photography)
100 Solid-state image sensor 106 Visible light transmission / near infrared cut filter (color filter for visible light photography)
107 Near-infrared transmission / visible light cut filter (color filter for near-infrared light photography)
110 Visible light filter (color filter for visible light photography)
111 Near-infrared filter (color filter for near-infrared light photography)
112 Visible light filter (color filter for visible light photography)
113 Near-infrared light filter (color filter for near-infrared light photography)
120 Visible light filter (color filter for visible light photography)
121 Near-infrared light filter (color filter for near-infrared light photography)
122 Visible light filter (color filter for visible light photography)
123 Near Infrared Light Filter (Color Filter for Near Infrared Light Photography)
200a-200d Solid-state image sensor 300-800 Solid-state image sensor

In order to solve the above problems, in a solid-state imaging device according to one embodiment of the present invention, a plurality of photoelectric conversion regions, which are regions that generate charges by photoelectrically converting received light, are provided on a single semiconductor substrate. A plurality of the photoelectric conversion regions provided on the semiconductor substrate, each of which is a solid-state imaging device, each of which includes a plurality of visible light photographing color filters and the same number of near-infrared light photographing color filters. A visible light image that is two-dimensionally distributed and arranged in correspondence with each other, and is acquired from a pixel that is associated with the visible light photographing color filter, and the near infrared light photographing Both near-infrared light images acquired from pixels associated with color filters are acquired simultaneously .
In order to solve the above-described problem, a solid-state imaging device according to one embodiment of the present invention performs charge conversion by photoelectrically converting light received by simultaneously irradiating an imaging target with near-infrared light and visible light. A plurality of photoelectric conversion regions, which are generated regions, are solid-state image sensors provided on a single semiconductor substrate, and include a plurality of color filters for visible light photography, and the same number of colors for near-infrared light photography. Each of the filters is associated with each of the plurality of photoelectric conversion regions provided on the semiconductor substrate and is two-dimensionally distributed and arranged, and the color filter for visible light imaging has a wavelength of near infrared wavelength or more. The color filter for near-infrared light photography is characterized by being composed of a film that does not transmit light having a wavelength shorter than the near-infrared wavelength.
In order to solve the above-described problem, a solid-state imaging device according to one embodiment of the present invention performs charge conversion by photoelectrically converting light received by simultaneously irradiating an imaging target with near-infrared light and visible light. A plurality of photoelectric conversion regions, which are generated regions, are solid-state image sensors provided on a single semiconductor substrate, and include a plurality of color filters for visible light photography, and the same number of colors for near-infrared light photography. Each of the filters is associated with each of the plurality of photoelectric conversion regions provided on the semiconductor substrate and is two-dimensionally distributed and arranged, and the color filter for visible light imaging has a wavelength of near infrared wavelength or more. The color filter for photographing near infrared light is characterized by being composed of a film that transmits only light of a specific wavelength in the near infrared wavelength.

Claims (12)

A solid-state imaging device in which a plurality of photoelectric conversion regions, which are regions that generate charges by photoelectrically converting received light, are provided on a semiconductor substrate,
Each of the plurality of visible light photographing color filters and the same number of near-infrared light photographing color filters are arranged in a two-dimensional manner in association with each of the plurality of photoelectric conversion regions. A solid-state imaging device.   The solid-state imaging device according to claim 1, wherein the visible light photographing color filter and the near infrared light photographing color filter are alternately arranged.   3. The solid-state imaging device according to claim 1, wherein the visible light color filter is formed of a film that transmits light of all wavelengths.   3. The solid-state imaging device according to claim 1, wherein the visible light photographing color filter is formed of a film that does not transmit light having a near infrared wavelength or longer. 4.   5. The color filter for photographing near infrared light is configured by a film that does not transmit light having a wavelength shorter than the near infrared wavelength. 6. Solid-state image sensor.   5. The solid-state imaging device according to claim 1, wherein the color filter for photographing near infrared light is formed of a film that transmits only light of a specific wavelength.   The solid-state image sensor according to any one of claims 1 to 6, wherein the solid-state image sensor is an element capable of simultaneously reading all pixels.   The solid-state imaging device has pixel information acquired from a plurality of pixels associated with the visible light photographing color filter adjacent to a pixel associated with the near infrared light photographing color filter. And an element capable of obtaining all pixel information relating to visible light by complementing pixel information of pixels associated with the color filter for near-infrared light photography. The solid-state imaging device according to claim 2.   The solid-state imaging device is configured to obtain pixel information acquired from a plurality of pixels associated with the near-infrared light photographing color filter adjacent to the pixels associated with the visible light photographing color filter. And an element capable of obtaining all pixel information related to near-infrared light by complementing pixel information of pixels associated with the visible light photographing color filter. The solid-state imaging device according to claim 2.   Each of the color filter for visible light photography and the color filter for near-infrared light photography is composed of a film in which an organic film is mixed with a material that absorbs light of a specific wavelength. The solid-state imaging device according to claim 1 or 2.   Each of the visible light color filter and the near-infrared color filter is formed of a film that reflects light of a specific wavelength by a laminated structure of inorganic films. Item 3. The solid-state imaging device according to Item 1 or 2.   Each of the color filter for visible light photography and the color filter for near-infrared light photography has a laminated structure of a film in which an organic film is mixed with a material that absorbs light of at least a specific wavelength and an inorganic film. 3. The solid-state imaging device according to claim 1, wherein the film reflecting light of a specific wavelength is composed of two or more layers formed by combining only one or both of the films. .