JPWO2013168213A1 - Aluminum refining apparatus and aluminum refining method - Google Patents

Abstract

An object of the present invention is to provide an aluminum refining apparatus capable of shortening the refining time and improving the yield. The aluminum refining apparatus according to the present invention includes a bottomed container (10) for housing a molten raw material aluminum, a heating means (20) for heating the container (10), and cooling for cooling a part of the container (10). An aluminum refining device (1) comprising means (30) and primary crystal peeling means (40) for peeling primary crystal particles (PAl) crystallized on the inner surface of the container (10), the cooling means (30) Has a gas flow path (3a) through which a cooling gas flows, and the gas flow path (3a) is formed inside an annular flow path portion (31) attached to the outer surface of the container (10). The annular channel portion (31) has at least one direct cooling opening (3b) facing the outer surface of the container (10).

Description

  The present invention relates to an aluminum purification apparatus and an aluminum purification method.

  An aluminum refining method using a segregation solidification method is disclosed in Patent Document 1 and the like. The purification method disclosed in Patent Document 1 is a method for purifying aluminum or an aluminum alloy (hereinafter referred to as “raw material aluminum”) containing Fe, Si, peritectic elements and other inevitable elements as impurities, A partial cooling process in which the vicinity of the upper part of the container containing the molten metal is locally cooled to crystallize primary crystal particles of aluminum, and the primary crystal particles crystallized on the inner surface of the container are peeled off and deposited at the bottom of the container. This includes a crystal growth process in which the deposited primary crystal particles are pressed to grow aluminum crystals, and a molten metal discharge process in which molten metal containing impurities is discharged from the container.

  In Patent Document 1, as a refining apparatus capable of performing the above refining method, a bottomed container for containing a raw material aluminum melt, heating means for heating the container, and a part of the inner surface of the container (hereinafter referred to as “crystal” A refining apparatus is disclosed that includes a cooling means for cooling the “exit surface”) and an initial crystal exfoliation means for exfoliating primary crystal particles crystallized on the crystallization surface. The cooling means includes a pipe line in contact with the outer surface of the container and a cooling facility (such as a blower blower) that allows a cooling gas to flow through the pipe line. A portion of the container is cooled by removing the heat.

JP 2002-155322 A

  In this type of aluminum refining method, it is necessary to heat a suitable portion of the container so that the molten metal does not solidify in the upper part of the container while cooling the crystallization surface. It takes time to cool down.

  In this type of aluminum refining method, the deposit is heated from the bottom and side surfaces, and an appropriate temperature adjustment is performed according to the height position of the deposit. If the upper end of the deposit is sufficiently away from the crystallization surface, the effect of heating the deposit will not affect the crystallization surface, but the position where the deposit (aluminum crystal) is increased and remelted (heating position) As the crystallographic surface approaches the crystallization surface, the temperature of the crystallization surface becomes difficult to decrease, and the region below the primary crystal point narrows, which may reduce the amount of crystallization.

  According to the purification apparatus or the purification method of Patent Document 1, although high-purity aluminum can be obtained, no measures have been taken to solve the above problems, so that the purification time is prolonged and the yield is deteriorated. There is a risk of inviting.

  From such a viewpoint, an object of the present invention is to provide an aluminum refining apparatus and an aluminum refining method capable of shortening the refining time and improving the yield.

  An aluminum refining apparatus according to the present invention that solves such a problem includes a bottomed container that accommodates a molten aluminum raw material, a heating means that heats the container, a cooling means that cools a part of the container, An aluminum refining device for separating primary crystal particles crystallized on the inner surface of the container, wherein the cooling means has a gas flow path through which a cooling gas flows, and the gas The flow path is formed inside an annular flow path portion disposed along the outer surface of the container, and the annular flow path portion has at least one direct cooling opening facing the outer surface of the container. It is characterized by.

  In the aluminum refining device according to the present invention, the outer surface of the container is exposed to the gas flow path through the direct cooling opening provided in the annular flow path portion, so that the cooling gas directly hits the outer surface of the container. That is, according to the present invention, since the heat of the container can be directly taken through the cooling opening, it is possible to increase the cooling efficiency as compared with the case where the cooling opening is not provided. It is possible to shorten the time required to cool a part (hereinafter referred to as “crystallization surface”) to a temperature lower than the primary crystal point (the time until the primary crystal particles are crystallized). In addition, when the cooling efficiency is increased, the temperature of the crystallization surface is less likely to rise even when the vicinity of the annular channel portion is heated (the region that is less than the initial crystallization point is less likely to narrow). Becomes difficult to decrease.

  Since the temperature of the cooling gas increases toward the downstream side of the gas flow path, there is a possibility that a difference in cooling efficiency occurs between the upstream side and the downstream side of the gas flow path, and the crystallization amount is biased. When it is desired to reduce the deviation of the crystallization amount, the gas flow path is divided into a plurality of divided passages arranged in the vertical direction, and the cooling gas is divided into one divided passage and the other divided passage adjacent thereto. It is better to reverse the flow direction. In this way, the variation in temperature of the crystallization surface is reduced, so that the amount of crystallization is less likely to be biased.

  Note that if the direct cooling openings communicate with the uppermost and lowermost divided passages, the cooling efficiency can be increased at the upper and lower edges of the crystallization surface. There is a possibility that the applied load becomes large. In such a case, the direct cooling opening may be communicated with the divided passages other than the uppermost and lowermost divided passages. In this way, since the temperature drop in the region close to the annular flow path portion is suppressed, the load on the heating means can be reduced.

  When providing a plurality of openings for direct cooling in the annular flow path portion, set a plurality of direct cooling regions arranged at equal intervals in the flow direction of the cooling gas, and each of the plurality of direct cooling regions, At least one of the direct cooling openings may be formed. In this way, since the direct cooling openings are regularly arranged, the temperature variation of the crystallization surface is reduced, and as a result, the crystallization amount is less likely to be biased.

  When the total value of the opening areas of the direct cooling openings is increased, there is a possibility that the load (energy consumption such as electric power) applied to the heating means is increased while the cooling efficiency is increased. In order not to apply an excessive load to the heating means, when the surface area of the inner peripheral wall of the annular flow passage portion is P and the total value of the opening areas of the direct cooling openings is Q, Q / It is preferable to set the opening area of the direct cooling opening so that the value of (P + Q) is 0.1 or less. If the opening area of the direct cooling opening is set so that the value of Q / (P + Q) is 0.02 or less, an extra load is applied to the heating means while improving the cooling efficiency for the crystallization surface. This is preferable.

  The aluminum refining method according to the present invention that solves the problem includes a pouring process of pouring a molten aluminum raw material into a bottomed container, and passing a cooling gas through a gas flow path arranged so as to surround the container. A partial cooling process for cooling a part of the inner surface of the container to a temperature below the primary crystal point, and the primary crystal particles crystallized on the inner surface of the container are peeled off and deposited on the lower part of the container, and the deposited primary crystal A method for purifying aluminum, comprising a crystal growth process in which a deposit of particles is pressed to grow aluminum crystals, and a molten metal discharge process for discharging the molten metal from a container. In the partial cooling process, the gas flow path is It is characterized in that at least a part of the flowing cooling gas is brought into direct contact with the outer surface of the container.

  According to the present invention, it is possible to increase the cooling efficiency as compared with the case where the cooling gas is not directly applied to the outer surface of the container. That is, according to the present invention, it is possible to shorten the time until the primary crystal particles are crystallized (the time required to cool a part of the inner surface of the container to a temperature lower than the primary crystal point). Further, according to the present invention, even when the vicinity of the annular flow path portion is heated, the temperature of the crystallization surface is difficult to increase, so that the amount of crystallization is difficult to decrease.

  In the molten metal discharge process, it is preferable that the molten metal is discharged from the container by turning the container upside down. If it does in this way, the molten metal which remains in a container can be discharged | emitted rapidly, and a molten metal and a crystal | crystallization can be isolate | separated easily.

In addition, when the pressure at the time of compacting a deposit is less than 4.0 * 10 < ⁴ > (Pa), there exists a possibility that the extrusion of the molten metal which exists in the clearance gap between primary crystal grains or the clearance gap between crystals may become inadequate, On the other hand, if it exceeds 1.1 × 10 ⁵ (Pa), the aluminum refining device may be damaged. Therefore, in the crystal growth process, the pressure is 4.0 × 10 ^{4 to} 1.1 × 10 ⁵ (Pa). It is preferable to compact the deposit.

  When a peritectic element is contained as an impurity, at least one of boron (boron) and a boron-containing compound is added to the molten aluminum material, and an oxidizing gas-containing gas is blown into the molten aluminum so that the peritectic crystal floats on the surface of the molten metal. A peritectic element separation process for removing a peritectic element compound or a peritectic element compound is performed, and in the pouring process, the molten metal obtained in the peritectic element separation process may be poured into the container. This makes it possible to reduce the amount of peritectic elements in the molten metal.

  According to the present invention, it is possible to shorten the purification time and improve the yield.

It is sectional drawing which shows the aluminum refinement | purification apparatus which concerns on embodiment of this invention. It is X1-X1 sectional drawing of FIG. It is the elements on larger scale of FIG. (A) is the elements on larger scale of an annular channel part, (b) is a side view of an annular channel part. 2A is a Y1-Y1 cross-sectional view of FIG. 2, FIG. 2B is a Y2-Y2 cross-sectional view of FIG. 2, and FIG. 2C is a Y3-Y3 cross-sectional view of FIG. It is X2-X2 sectional drawing of FIG. It is sectional drawing which shows a pre-processing apparatus. It is sectional drawing which shows the crystallization condition of primary crystal grain. It is a modification of the aluminum refinement | purification apparatus which concerns on embodiment of this invention.

  The aluminum refining method according to the embodiment of the present invention is carried out in order to obtain high-purity aluminum from a melt of raw material aluminum (raw material aluminum containing Fe, Si, peritectic elements and other inevitable elements as impurities). Is. The aluminum purification method according to this embodiment is performed using the aluminum purification apparatus 1 shown in FIG. 1 and the pretreatment apparatus 2 shown in FIG.

First, the structure of the aluminum refinement | purification apparatus 1 is demonstrated in detail.
The aluminum refining apparatus 1 is an apparatus for growing aluminum crystals by a fractional crystallization method using a segregation phenomenon, and as shown in FIG. 1, contains a raw material aluminum melt (hereinafter referred to as “raw material melt M ₁ ”). The container 10 to be heated, the heating means 20 for heating the container 10, the cooling means 30 for cooling a part of the inner surface (crystallization surface) of the container 10, and the primary crystal particles P _Al crystallized on the inner surface of the container 10 are peeled off. The primary crystal peeling means 40 and a heat insulating material 50 covering the container 10 are provided.

  The container 10 includes a bottomed cylindrical inner container 11 and a bottomed cylindrical outer container 12 that covers the inner container 11. The inner container 11 is made of a heat-resistant material such as graphite, and the outer container 12 is made of a metal material such as stainless steel. The inner surface of the outer container 12 is in contact with the outer surface of the inner container 11. A lid (not shown) is attached to the open end of the outer container 12.

  The heating means 20 is disposed around the container 10. The heating means 20 of the present embodiment includes a lower heater 21 that heats the bottom of the container 10 and a plurality of stages (four stages in the present embodiment) that heat a region from the lower part of the container 10 to an intermediate portion in the height direction. , And an upper heater 23 for heating the upper part of the container 10. The lower heater 21, the plurality of intermediate heaters 22, 22,... And the upper heater 23 are independent from each other so that the temperature can be individually controlled.

  The lower heater 21 is disposed so as to cover the bottom of the container 10. The intermediate heaters 22, 22,... Are arranged so as to surround the container 10 in a region between the lower heater 21 and the cooling means 30. The upper heater 23 is disposed so as to surround the container 10 in the upper region of the cooling means 30.

  The cooling means 30 includes a gas flow path 3a through which the cooling gas flows, and cooling equipment (not shown) (for example, a blower blower) for causing the cooling gas to flow through the gas flow path 3a.

  As shown in FIG. 2, the cooling means 30 of the present embodiment includes an annular flow path portion 31 disposed along the outer surface of the container 10, and a first air supply from an unillustrated intake port to the annular flow path portion 31. And an exhaust part 34 extending from the annular flow path part 31 to an exhaust port (not shown). The gas flow path 3a (see FIG. 1) is formed inside (internal space) the annular flow path portion 31, the first air supply portion 32, the second air supply portion 33, and the exhaust portion 34.

  The annular channel portion 31 is disposed so as to surround the container 10. The annular flow path portion 31 is made of a stainless steel material.

  As shown in FIG. 3, the annular channel portion 31 includes an outer shell (inner peripheral wall 311, outer peripheral wall 312, upper wall 313, and lower wall 314) having a rectangular cross section, and a partition wall that divides the internal space of the outer shell vertically. 315. That is, in the annular flow path portion 31, the gas flow path is divided into a plurality of divided passages 31a to 31f arranged in the vertical direction. In addition, in this embodiment, although the case where the cross-sectional shape of the division | segmentation channel | paths 31a-31f is a rectangle is illustrated, it is not the meaning which limits the cross-sectional shape of a division | segmentation flow path. Although illustration is omitted, the sectional shape of the divided flow path may be circular. In this case, each divided flow path may be formed using a stainless steel pipe having a circular cross section.

  The inner peripheral wall 311 is a part facing the outer peripheral surface (outer container 12) of the container 10 with a gap, and the outer peripheral wall 312 is a part facing the inner peripheral wall 311 with a gap. The upper wall 313 is a part connecting the upper part of the inner peripheral wall 311 and the upper part of the outer peripheral wall 312, and the lower wall 314 is a part connecting the lower part of the inner peripheral wall 311 and the lower part of the outer peripheral wall 312. The inner peripheral wall 311 may be brought into contact with the outer peripheral surface of the container 10.

  The partition wall 315 is a partition wall for dividing the gas flow path (= the internal space of the annular flow path portion 31) into a plurality of divided flow paths 31a to 31f, and a plurality of the partition walls 315 are arranged in parallel at intervals in the vertical direction. The number of partition walls 315 is not limited, but the number of partition walls 315 is preferably an odd number so that the number of divisions of the gas flow path is an even number.

A plurality of direct cooling openings 3 b, 3 b,... Facing the outer surface of the container 10 are formed in the annular flow path portion 31.
The direct cooling opening 3 b is formed in order to blow the cooling gas directly on the outer surface of the container 10, and includes a circular hole penetrating the inner peripheral wall 311. The opening end of the direct cooling opening 3b on the container 10 side faces the outer surface of the container 10 with a gap. The opening diameter when the direct cooling opening 3b is a circular hole may be set to about 1 to 7 mm, for example. The shape of the direct cooling opening 3b is not limited. Although illustration is omitted, a polygonal hole or elongated hole may be directly used as the cooling opening 3b, or a slit continuous in the circumferential direction of the container 10 may be used as the direct cooling opening 3b.

  The direct cooling opening 3b communicates with the division passages 31b to 31e other than the uppermost division passage 31a and the lowermost division passage 31f. That is, the cooling openings 3b communicate directly with each of the middle-stage divided passages 31b to 31e, and the cooling openings 3b do not communicate directly with the uppermost divided flow path 31a and the lowermost divided passage 31f.

  As shown in FIG. 4 (a), a plurality of direct cooling openings 3b, 3b,... Are provided in the middle divided flow path 31b at intervals in the flow direction of the cooling gas (circumferential direction of the container 10). Are communicating. Although not shown, the same applies to the other divided flow paths 31c to 31e.

  The annular flow path portion 31 of the present embodiment has a plurality of direct cooling regions 3c, 3c,... Arranged at equal intervals in the cooling gas flow direction (circumferential direction of the container 10). At least one direct cooling opening 3b is formed in each of the regions 3c, 3c,. As shown in FIG. 4B, in the present embodiment, a case where eight direct cooling openings 3b (two in each of the divided passages 31b to 31e) are arranged per one direct cooling region 3c is illustrated. However, it is not intended to limit the number and arrangement of the cooling openings 3b directly. In addition, the arrow shown to (b) of FIG. 4 has shown the flow direction of the gas for cooling.

  The opening area of the direct cooling openings 3b and the number of the direct cooling openings 3b can be set as appropriate, but in order not to apply an extra load to the heating means 20 (see FIG. 1), the inner peripheral wall When the surface area of 311 (the area of the surface of the annular channel 31 facing the container 10) is P, and the total value of the opening areas of the direct cooling openings 3b, 3b,. The value of (P + Q) is preferably 0.1 or less. In particular, if the value of Q / (P + Q) is 0.02 or less, it is preferable because an extra load is not applied to the heating means 20 while increasing the cooling efficiency of the crystallization surface. In addition, when the annular flow path part 31 is formed with a circular pipe material, the part located in the container 10 side rather than the vertical plane which passes along the cross-sectional center of a pipe material (part which exhibits a half-divided cylindrical shape) among the surrounding walls of a pipe material ) Is the inner wall.

  As shown in FIG. 5A, the first air supply unit 32 is connected to a first air supply main pipe 32a extending from an intake port (not shown) and a downstream end of the first air supply main pipe 32a. And a plurality of (three in the present embodiment) first supply branch pipes 32c, 32c, and 32c extending from the first supply header 32b to the annular flow path portion 31. . The 1st air supply header 32b is a hollow member arrange | positioned in the branch location of the gas flow path 3a. The internal spaces of the first supply branch pipes 32c, 32c, 32c are divided into odd-numbered divided flow paths 31a, 31c, 31e from the top (the uppermost divided flow path 31a, the third divided flow path 31c from the top, and It communicates with the fifth divided flow path 31e) from the top. That is, the gas flow path 3a in the first air supply unit 32 is branched into three and communicated with the divided flow paths 31a, 31c, and 31e. In addition, the arrow in FIG. 5 has shown the flow direction of the gas for cooling.

  As shown in FIG. 6, a guide wall 316 is provided at a connection portion between the annular flow path portion 31 and the first air supply portion 32. The guide wall 316 is a partition wall for allowing the cooling gas introduced from the first air supply portion 32 to the annular flow passage portion 31 to flow in one direction (counterclockwise in FIG. 5). Is provided inside.

  As shown in FIG. 5B, the second air supply unit 33 is connected to a second air supply main pipe 33a extending from an intake port (not shown) and a downstream end of the second air supply main pipe 33a. The second air supply header 33b, and a plurality (three in the present embodiment) of the second air supply branch pipes 33c, 33c, 33c extending from the second air supply header 33b to the annular flow path portion 31 are provided. . The 2nd air supply header 32b is a hollow member arrange | positioned at the branch location of the gas flow path 3a. The internal spaces of the second supply branch pipes 33c, 33c, 33c are the even-numbered divided flow paths 31b, 31d, 31f (the second divided flow path 31b from the top, the fourth divided flow from the top). The channel 31d communicates with the sixth-stage (lowermost) divided flow path 31f) from the top. That is, the gas flow path 3a in the second air supply unit 33 is branched into three and communicated with the divided flow paths 31b, 31d, and 31f.

  Although illustration is omitted, a guide wall is provided at a connection portion between the annular flow path portion 31 and the second air supply portion 33. The guide wall is a partition for allowing the cooling gas introduced from the second air supply portion 33 to the annular flow passage portion 31 to flow in one direction, and is provided inside the annular flow passage portion 31. In the present embodiment, the flow direction of the cooling gas is reversed between the odd-numbered divisional passages 31a, 31c, and 31e from above and the even-numbered divisional passages 31b, 31d, and 31f adjacent thereto. A guide wall is provided.

  As shown in FIG. 5C, the exhaust part 34 is connected to the exhaust branch pipes 34a, 34a,... Extending from the annular flow path part 31 and the downstream ends of the exhaust branch pipes 34a, 34a,. An exhaust header 34b and an exhaust main pipe 34c extending from the exhaust header 34b to an exhaust port (not shown) are provided. The exhaust header 34b is a hollow member disposed at the junction of the exhaust branch pipes 34a, 34a,. The internal space of the exhaust branch pipes 34a, 34a, ... communicates with the divided flow paths 31a to 31f.

  As shown in FIG. 1, the primary crystal peeling means 40 moves the support bar 41, the disk-like peeling press part 42 provided at the lower end of the support bar 41, and the support bar 41 and the peeling press part 42 up and down. And a power source (not shown). The support bar 41 and the peeling press part 42 are made of a heat-resistant material such as graphite.

  The peeling pressing portion 42 has an outer diameter equivalent to the inner diameter of the container 10 and slides on the inner peripheral surface of the container 10. A liquid passage hole 42 a is formed in the peeling press part 42. The liquid passage hole 42a is a through hole that vertically penetrates the peeling pressing portion 42.

  The heat insulating material 50 enhances the heat retaining effect of the container 10 and is arranged so as to surround the heating means 20 and the annular flow path portion 31. The heat insulating material 50 is made of a material having fire resistance and heat insulating properties.

Next, the configuration of the preprocessing device 2 will be described in detail with reference to FIG.
The pretreatment device 2 is a device that performs a treatment for reducing the amount of peritectic elements with respect to a molten raw aluminum (hereinafter referred to as “raw molten metal M ₀ ”) containing peritectic elements as impurities. a crucible 60 for holding molten metal M _0, and boron adding means 70 for adding at least one of boron and boron-containing compound in the raw material melt M ₀ in the crucible 60, an oxidizing gas-containing gas in the raw material melt M ₀ in the crucible 60 And a gas blowing means 80 for blowing gas.

  The crucible 60 is a bottomed cylindrical container. The inner surface of the crucible 60 is covered with a heat-resistant material such as graphite, an irregular refractory, and a refractory brick.

  The boron adding means 70 includes a storage container 71 that stores at least one of boron and a boron-containing compound, an input pipe 72 that goes from the bottom of the storage container 71 to the crucible 60, and an on-off valve 73 that opens and closes the input pipe 72. Yes.

  The gas blowing means 80 includes a rotation support pipe 81, a stirring blade 82 provided at the lower end of the rotation support pipe 81, a power source 83 connected to the upper end portion of the rotation support pipe 81, and the power source 83 and the rotation support. A rotary joint 84 interposed between the pipe 81, a gas supply source 85 that stores an oxidizing gas-containing gas (atmosphere, carbon dioxide, etc.), and a gas supply pipe 86 that extends from the gas supply source 85 to the rotary joint 84. And a pressure regulating valve 87 provided in the gas supply pipe 86.

  The rotary support tube 81 and the stirring blade 82 are made of a heat resistant material such as graphite. A gas discharge port 82 a communicating with the rotary support tube 81 is formed in the stirring blade 82.

The power source 83 is composed of a motor that can rotate forward and backward at a rotational speed of 0 to 1200 revolutions per minute. The output shaft of the power source 83 is connected to the upper end of the rotary support tube 81 via a rotary joint 84. In addition, when the rotation support tube 81 and the stirring blade 82 are rotated forward and backward, the raw material melt M ₀ can be stirred without greatly disturbing the surface of the raw material melt M ₀ .

The gas supply source 85 communicates with the rotation support pipe 81 via the rotary joint 84 and the gas supply pipe 86. Oxidizing gas-containing gas in the gas supply source 85 passes through a gas supply pipe 86 and the rotary joint 84 and the rotating support tube 81, it is blown from the gas discharge ports 82a in the raw material melt M _0. The bubbles of the oxidizing gas-containing gas diffuse while being refined by the stirring blade 82.

  Next, an aluminum refining method using the aluminum refining apparatus 1 (see FIG. 1) and the pretreatment apparatus 2 (see FIG. 7) will be described. In the present embodiment, the case of refining raw material aluminum containing Fe, Si, peritectic elements and other inevitable elements as impurities is exemplified.

  The aluminum refining method according to the present embodiment includes a peritectic element separation process, a pouring process, a partial cooling process, a crystal growth process, and a molten metal discharge process. The peritectic element separation process is performed by the pretreatment apparatus 2, and the partial cooling process, the crystal growth process, and the molten metal discharge process are performed by the aluminum purification apparatus 1.

As shown in FIG. 7, the peritectic element separation process is performed by adding boron and a boron-containing compound to a raw material molten metal M ₀ (a molten aluminum material containing Fe, Si, peritectic elements and other inevitable elements as impurities). blowing an oxidizing gas-containing gas with the addition of at least one of a process of removing peritectic elements and rise to the surface of the raw material melt M ₀ or peritectic element compound.

In the peritectic element separation process, first, a predetermined amount of the raw material molten metal M ₀ is poured into the crucible 60. Next, at least one of boron and a boron-containing compound is added to the raw material molten metal M ₀ in the crucible 60 by the boron adding means 70, and the stirring blade 82 is rotated forward and backward at a predetermined rotational speed (for example, 400 revolutions per minute). Then, the oxidizing gas-containing gas is blown into the raw material molten metal M ₀ from the gas discharge port 82a. After the blowing of the oxidizing gas-containing gas for the predetermined period, to stop the blowing of the oxidizing gas-containing gas, then raised to separate off the peritectic element boride adsorbed scum which floats on the surface of the raw material melt M _0, the discharge To do. Through the peritectic element separation process, it is possible to obtain a raw material melt M ₁ that hardly contains a peritectic element.

  Into a crucible 60 having an inner diameter of 800 mm and an internal height of 1000 mm, a molten raw material 1.0 (t) containing 30 mass ppm of Ti (titanium) and 50 mass ppm of V (vanadium) was poured. After adding 1.3 (kg) of the boron mother alloy, an oxidizing gas-containing gas was blown in at a flow rate of 80 (l / min) for 20 minutes. As a result, Ti in the molten aluminum became 1 mass ppm, and V was 1 The mass was ppm. Incidentally, when a comparative experiment was performed in which argon gas was blown in place of the oxidizing gas-containing gas, Ti in the molten aluminum was 7 mass ppm and V was 23 mass ppm.

The removal rate of Ti and V in the above test is represented by the first-order reaction rate equation shown in the following equation 1, and the removal rate coefficient k is as shown in the following table 1.
C = C ₀ e ^-kt Equation 1
here,
C: Concentration after time t (mass ppm)
C ₀ : Initial concentration (mass ppm)
k: Removal rate coefficient t: Reaction time (min)

  As can be seen from Table 1, the removal rate constant k of Ti when the oxidizing gas-containing gas is blown is 2.6 times that when argon gas is blown, and V of the oxidizing gas-containing gas is blown. The removal rate constant k is 5.5 times that when argon gas is blown. The removal rate constant k when the oxidizing gas-containing gas is blown is larger than that of argon gas for both Ti and V. Therefore, the Ti concentration and the ultimate V concentration after a predetermined time (for example, 20 minutes) are extremely high. It will be low.

When the raw material melt M ₁ containing almost no peritectic elements is obtained, the raw material melt M ₁ is poured into the container 10 of the aluminum refining device 1 (pouring process). In the aluminum refining device 1 shown in FIG. Execute the crystal growth process and the molten metal discharge process.

The pouring process is performed with the primary crystal peeling means 40 removed. The primary crystal peeling means 40 is set after pouring the raw material molten metal M ₁ into the container 10. The container 10 is heated by the heating means 20. The partial cooling process and the crystal growth process are performed in an argon atmosphere.

  The partial cooling process is a process in which a part of the inner surface of the container 10 (hereinafter referred to as “crystallization surface”) is cooled to a temperature lower than the primary crystal point by passing a cooling gas through the gas flow path 3a. In the partial cooling process, as shown in FIG. 3, at least part of the cooling gas flowing through the divided flow paths 3b to 3e directly contacts the outer surface of the container 10 through the cooling openings 3b, 3b,.

  As shown in FIGS. 5 and 6, the cooling gas is supplied to the divided flow paths 31a to 31f in the annular flow path section 31 through the first air supply section 32 and the second air supply section 33, and the divided flow path 31a. After going around ~ 31f, it is discharged through the exhaust part 34. When the cooling gas is caused to flow through the divided flow paths 31a to 31f, the container 10 is indirectly cooled via the inner peripheral wall 311 (see FIG. 3) of the annular flow path portion 31, and the direct cooling openings 3b, The container 10 is directly cooled by the cooling gas blown to the outer peripheral surface of the container 10 from 3b,.

  The cooling gas flowing through the first air supply unit 32 is branched into three and supplied to the divided flow paths 31a, 31c, 31e (see (a) of FIG. 5), and the divided flow paths 31a, 31a, The cooling gas that circulates 31c and 31e counterclockwise (counterclockwise) and flows through the second air supply section 33 is branched into three and supplied to the divided flow paths 31b, 31d, and 31f (see FIG. 5 (b)), the divided flow paths 31b, 31d and 31f are rotated clockwise (clockwise). That is, one divided flow path (the odd-numbered divided flow paths 31a, 31c, and 31e from the top) and the other divided flow paths adjacent thereto (the even-numbered divided flow paths 31b, 31d, and 31f from the top) Thus, the flow direction of the cooling gas is reversed (see FIG. 4B). In this way, among the divided flow paths 31a to 31f, the downstream side (high temperature side) of the remaining divided passages 31b, 31d, 31f is adjacent to the upstream side (low temperature side) of the divided passages 31a, 31c, 31e. The upstream side (low temperature side) of the remaining divided passages 31b, 31d, 31f is arranged adjacent to the downstream side (high temperature side) of the divided passages 31a, 31c, 31e. Compared with the case where it is made to flow only in the direction, the variation in the height (width) of the crystallization surface (a band-like region cooled in the vessel 10 below the initial crystal point) becomes smaller, and further, the temperature at the crystallization surface. The variation of is also reduced. That is, the temperature becomes uniform over the entire circumference of the crystallization surface.

Thus, if the flow of the cooling gas is continued, the temperature of the band-like region (crystallization surface) on the inner surface of the container 10 corresponding to the annular flow path portion 31 is maintained within the temperature range between the eutectic point and the primary crystal point. Will come to be. When the temperature of the crystallization surface falls below the primary crystal point, aluminum primary crystal particles P _Al crystallize on the crystallization surface. Incidentally, the raw material melt M ₁ at a site other than crystal exit surface so as not solidified, appropriately heating the container 10 by the heating means 20.

When the primary crystal grains P _Al crystallize on the crystallization surface, the crystal growth process is executed.
In the crystal growth process, as shown in FIG. 1, the primary crystal particles P _Al crystallized on the crystallization surface (inner surface of the container 10) are peeled off and deposited on the lower part of the container 10, and the deposited primary crystal particles P _Al This is a process in which the deposit C _Al is pressed to grow aluminum crystals. The crystal growth process is repeated until the deposit C _Al comes close to the lower edge of the crystallization surface. While the crystal growth process is being performed, the cooling of the crystallization surface by the cooling gas is continued.

When the primary crystal particles P _Al are peeled off, the peeling pressing portion 42 of the primary crystal peeling means 40 may be periodically moved up and down in the vicinity of the crystallization surface. When the peeling pressing portion 42 is moved from the upper side to the lower side of the crystallization surface (annular flow path portion 31) or the peeling pressing portion 42 is moved from the lower side to the upper side of the crystallization surface, the primary crystal particles P _Al are peeled off. Then, it deposits in the lower part of the container 10. When the peeling pressing portion 42 is moved up and down, the crystallization surface is periodically updated, so that the crystallization speed does not decrease. A part of the peeled primary crystal particles P _Al grows while floating in the raw material molten metal M ₁ and deposits in the lower part of the container 10. Since the upper and lower sides of the peeling pressing portion 42 communicate with each other through the liquid passage hole 42a, when the peeling pressing portion 42 is moved downward, the raw material molten metal M ₁ below the peeling pressing portion 42 passes. flows into the upper stripping pressing portion 42 through the liquid holes 42a, the peeling pressing portion 42 when moving upward, the release pressing portion upper material melt M ₁ of the release pressing portion 42 through the liquid passing holes 42a 42 Flows into the lower side of

When a predetermined time (for example, about 3 to 30 minutes) has elapsed after the vertical movement of the peeling pressing portion 42 has started, the peeling pressing portion 42 is moved downward to deposit primary crystal particles deposited in the lower portion of the container 10. The deposit C _Al (aluminum crystal) is pressed to solidify the deposit C _Al . When pressing the sediment C _Al from above with a release pressing portion 42, and leaching the raw material melt M ₁ from the gap or gaps between the crystals between the primary crystal particles, the upper material melt M peeling pressing portion 42 through the liquid holes 42a Discharged to ₁ .

When the deposit C _Al is pressed and hardened, the heaters located around the newly deposited portion (pressing area) of the lower heater 21 and the intermediate heaters 22, 22,. If it does in this way, remelting and recrystallization of the aluminum crystal will progress from the lower layer part of deposit C _Al toward the upper layer part, and from the outer peripheral part of deposit C _Al toward the center. . Further, the pressing by the peeling pressing part 42 and the heating from the outer peripheral part of the container 10 cause the impurity-containing liquid containing impurities to move from the bottom part to the upper part and to move from the outer peripheral part to the central part. become.

In addition, when the pressure at the time of compacting the deposit C _Al is less than 4.0 × 10 ⁴ (Pa), the extrusion of the raw material melt M ₁ existing in the gaps between the primary crystal grains or the gaps between the crystals becomes insufficient. On the other hand, if it exceeds 1.1 × 10 ⁵ (Pa), there is a possibility that the aluminum refining device 1 may be damaged, and there is a possibility that crystals may adhere to the liquid passage hole 42a of the peeling press part 42. It is preferable to compact the deposit C _Al with a pressure of 4.0 × 10 ^{4 to} 1.1 × 10 ⁵ (Pa).

When the upper surface of the aluminum crystal (deposit C _Al ) reaches the vicinity of the lower edge of the crystallization surface, the flow of the cooling gas is stopped and the support bar 41 and the peeling pressing portion 42 are extracted from the container 10 and the molten metal is discharged. Move to the process.

The molten metal discharge process is a process of discharging the remaining raw material molten metal M ₁ from the container 10. Although illustration is omitted, in this embodiment, the container 10 is tilted by tilting means, and the container 10 is turned upside down to discharge the raw material molten metal M ₁ from the container 10. In the central portion and the upper portion of the sediment C _Al, but the raw material melt M ₁ containing impurities inside (the gap between the crystals) of deposits C _Al is left, a state obtained by inverting the top and bottom of the container 10 maintaining, in addition to the raw material melt M ₁ remaining outside the sediment C _Al, a raw material melt M ₁ remaining inside (gap crystals) deposits C _Al is quickly discharged from the container 10 by the action of gravity As a result, the raw material molten metal M ₁ containing high-concentration impurities and high-purity aluminum crystals (deposit C _Al ) are separated. Since sediment C _Al is in close contact with the bottom surface or the like of the container 10, but not be immediately slipping even by inverting the container 10 and is made to invert for more than five minutes, sediment C _Al is slipping In some cases, it is preferable that the inversion time of the container 10 is within 5 minutes, and thereafter the container 10 is quickly returned to the original position.

When the container 10 is returned to the original position, the solid-liquid separation of aluminum is completed. Incidentally, the raw material melt M ₁ in the vessel 10 and a sediment C _Al and the raw material melt M ₁ may be separated by suction.

Thereafter, the deposit C _Al is allowed to cool for several hours, and the deposit C _Al is taken out from the container 10 and stored as a product.

When aluminum is purified by the above procedure, the reconstituted impurity-containing liquid remains slightly in the central part of the deposit C _Al or in the vicinity of the upper part thereof, but in other parts, Fe, Si, etc. are less than several mass ppm. High-purity aluminum with a reduced content can be obtained.

As described above, according to the aluminum refining device 1, the raw material melt M ₁ is stirred by the peeling pressing unit 42, and impurities between the crystals move upward from the liquid passage hole 42 a as the deposit C _Al is pressed (compacted). Since it is extruded, the purity of aluminum is also high. Further, since the raw material melt M ₁ containing impurities is pushed up into the gap above the deposit C _Al , it can be easily discharged. Furthermore, according to the aluminum refining apparatus 1, the primary crystal particle P _Al can be peeled off and the deposit C _Al can be tamped by one peeling pressing portion 42, so that the structure and operation become extremely simple, and the failure can be prevented. Risk is also reduced.

In addition, according to the aluminum purification apparatus 1, the outer surface of the container 10 is exposed to the gas flow path 3 a (the divided flow paths 31 b to 31 e), so that the cooling gas directly hits the outer surface of the container 10. That is, according to the aluminum refining apparatus 1, since the heat of the container 10 can be directly taken away through the direct cooling openings 3b, 3b,..., The cooling efficiency compared to the case where the direct cooling openings 3b, 3b,. As a result, it is possible to shorten the time required for cooling the crystallization surface to a temperature lower than the primary crystal point (the time until the primary crystal grains P _Al crystallize). Further, when the cooling efficiency is increased, even when the vicinity of the crystallization surface is heated, a relatively wide crystallization surface is obtained, and the temperature of the crystallization surface becomes difficult to increase (the region where the crystallization surface is less than the initial crystallization point). Therefore, it is difficult to reduce the amount of crystallization.

  Moreover, according to the aluminum refinement | purification apparatus 1, the gas flow path 3a in the annular flow-path part 31 is divided into several division | segmentation passages 31a-31f, division | segmentation passage 31a, 31c, 31e and the other division | segmentation passage 31b adjacent to these. , 31d and 31f, the flow direction of the cooling gas is reversed, so that the temperature variation of the crystallization surface is reduced, and as a result, the crystallization amount is less likely to be biased (see FIG. 8).

  In particular, in the present embodiment, the gas flow path 3a is divided into even-numbered divided flow paths 31a to 31f, and the odd-numbered divided passages 31a, 31c, and 31e from the top and the even-numbered divided passages 31b and 31b from the top. Since the flow direction of the cooling gas is reversed between 31d and 31f, the crystallization surface can be cooled in a well-balanced manner over the entire circumference, and therefore the deviation of the crystallization amount is further reduced. Become. In the present embodiment, since the cooling openings 3b, 3b,... Communicate directly with the division passages 31b to 31e, the division passages 31c, 31e are upstream of the division passages 31c, 31e (low temperature side). The low-temperature cooling gas blown out from the gas and the high-temperature cooling gas blown out from the divided flow paths 31b and 31d are mixed in the space between the container 10 and the annular flow path portion 31, while the divided passages 31b and 31b, On the upstream side (low temperature side) of 31d, the high-temperature cooling gas blown out from the divided passages 31c and 31e and the low-temperature cooling gas blown out from the divided flow paths 31b and 31d are the container 10 and the annular flow path portion. Since the temperature is mixed in the space between the two, the temperature distribution is less likely to be biased, and as a result, the crystallization amount is less biased.

  According to the aluminum refining device 1, since the cooling openings 3b, 3b,... Are directly connected to the division passages 31b to 31e other than the uppermost division passage 31a and the lowermost division passage 31f, As a result, it is possible to reduce the load applied to the heating means 20.

  According to the aluminum refining device 1, a plurality of direct cooling regions 3c, 3c,... Arranged at equal intervals in the flow direction of the cooling gas are set, and at least one of the direct cooling regions 3c, 3c,. Two direct cooling openings 3b are formed. In this way, since the direct cooling openings 3b, 3b,... Are regularly arranged, the temperature variation of the crystallization surface is reduced, and as a result, the crystallization amount is less likely to be biased.

  In the present embodiment, the case where the cooling openings 3b are directly connected to the divided passages 31b to 31e other than the uppermost divided flow channel 31a and the lowermost divided flow channel 31f is illustrated. The cooling opening 3b may be directly communicated with 31a and the lowermost division passage 31f. In this way, although the load applied to the heating means 20 may increase, the cooling efficiency can also be improved at the upper edge portion and the lower edge portion of the crystallization surface.

  In the present embodiment, the gas flow path 3a in the annular flow path portion 31 is divided into a plurality of divided passages 31a to 31f, and the divided passages 31a, 31c, 31e and other divided passages 31b, 31d, Although the case where the flow direction of the cooling gas is reversed with 31f is illustrated, it is not necessary that the number of divided flow paths to be reversed is the same. Although illustration is omitted, the flow direction may be reversed between at least one divided passage and the remaining divided passages. In the present embodiment, the case where the divided flow paths in which the flow direction of the cooling gas is counterclockwise and the divided flow paths in the clockwise direction are alternately arranged is illustrated, but it is not always necessary to alternately arrange the divided flow paths. . For example, the gas flow path 3a may be divided into four, and the flow direction of the cooling gas may be reversed between the uppermost and lowermost divided flow paths and the middle two-stage divided flow paths. Further, the flow direction of the cooling gas may be unified in one direction.

  In order to unify the flow direction of the cooling gas in one direction, an aluminum refining device 1 ′ shown in FIG. 9 is used. The cooling gas is supplied to the plurality of divided flow paths in the annular flow path section 31 through the air supply section 32 ′, circulates in each divided flow path in the same direction, and is then discharged through the exhaust section 34 ′. In the aluminum refining apparatus 1 ′, the cooling capacity decreases as it goes from the air supply section 32 ′ to the exhaust section 34 ′. Therefore, although the crystallization amount is biased compared to the aluminum refining apparatus 1 shown in FIG. Since the 1st air supply part 32 and the 2nd air supply part 33 of the apparatus 1 can be integrated into one, it becomes a simple structure.

A test was conducted to confirm the effect of the direct cooling opening 3b.
In the test, a container 10 having an inner diameter of 560 mm and a height of 1300 mm was used.

  The direct cooling openings 3b were circular holes having a diameter of 5 mm, and 100 direct cooling openings 3b were evenly allocated to the middle divisional passages 31b to 31e. In each stage, 25 direct cooling openings 3b were arranged at substantially equal intervals in the circumferential direction. When the surface area of the inner peripheral wall 311 of the annular channel 31 is P and the total opening area of the direct cooling openings 3b, 3b,... Is Q, the value of Q / (P + Q) is 0.006 (0. 6%).

  The flow direction of the cooling gas is counterclockwise in the odd-numbered divided flow paths 31a, 31c, and 31e from the top, and clockwise in the even-numbered divided flow paths 31b, 31d, and 31f from the top. The temperature of the cooling gas supplied to the first air supply part 32 and the second air supply part 33 was about 25 ° C., and the temperature of the cooling gas discharged from the exhaust part 34 was about 114 ° C.

  In the case where the opening 3b for direct cooling is provided (the embodiment of the present invention), molten raw material 580 (kg) having an Fe concentration of 250 (ppm) and an Si concentration of 230 (ppm) is poured into the container 10 and directly cooled. In the case (comparative example) in which the opening 3b is not provided, 500 (kg) of a raw material melt having an Fe concentration of 250 (ppm) and an Si concentration of 200 (ppm) was poured into the container 10. In both the examples and comparative examples, the partial cooling process and the crystal growth process were performed in an argon atmosphere.

The time required from the start of the partial cooling process to the first crystallization of aluminum primary crystal particles P _Al was 0.6 hours in the example, whereas it was 2 hours in the comparative example.

Further, in the example, 60% of the raw material melt could be solidified in 9 hours after starting cooling in the partial cooling process, and 70% of the raw material melt could be solidified in 12 hours. In contrast, in the comparative example, only 55% of the raw material melt could be solidified even after 12 hours had passed since the start of cooling in the partial cooling process. In addition, the pressure at the time of compacting the deposit C _Al was set to 9.9 × 10 ⁴ (Pa) in both the examples and the comparative examples.

Thereafter, the molten metal discharge process was performed by reversing the top and bottom of the container 10 to separate the deposit C _Al and the raw material molten metal M ₁ .

  The aluminum ingot obtained in the example was sliced in the longitudinal direction with a thickness of 20 mm, and the obtained sliced piece was divided into 3 parts in the radial direction and 7 parts in the longitudinal direction. Was analyzed. The analysis results of Fe in Examples are shown in Table 2, and the analysis results of Si are shown in Table 3.

  In addition, the aluminum lump obtained in the comparative example was sliced in the longitudinal direction with a thickness of 20 mm, and the obtained sliced piece was divided into 3 parts in the radial direction and 6 parts in the longitudinal direction. The Si concentration was analyzed. The analysis results of Fe in the comparative example are shown in Table 4, and the analysis results of Si are shown in Table 5.

  As can be seen from Tables 2 to 5, there is no significant difference in Fe concentration and Si concentration between Examples and Comparative Examples, and both are reduced to extremely low concentrations. On the other hand, regarding the cycle time and the yield, in the example, 70% of the raw material melt can be solidified in 12 hours, whereas in the comparative example, only 55% of the raw material melt can be solidified in 12 hours. .

  As described above, according to the embodiment of the present invention, it is possible to shorten the refining time and improve the yield without increasing the cooling equipment (such as the blower), and to obtain high-purity aluminum. Can do.

  On the other hand, in the comparative example, the cooling efficiency is poor, and as the upper surface of the deposit approaches the crystallization surface, the range of the crystallization surface narrows and the temperature of the crystallization surface easily rises, so the crystallization amount decreases. Even in the comparative example, if the range of the cooling section is expanded, the amount of crystallization can be increased, but the use of molten aluminum increases, so the yield decreases.

DESCRIPTION OF SYMBOLS 10 Container 20 Heating means 30 Cooling means 31 Flow path component 3a Gas flow path 31a-31f Split flow path 3b Direct cooling opening 3c Direct cooling area 40 Primary crystal peeling means 50 Thermal insulation

An aluminum refining apparatus according to the present invention that solves such a problem includes a bottomed container that accommodates a molten aluminum raw material, a heating means that heats the container, a cooling means that cools a part of the container, An aluminum refining device for separating primary crystal particles crystallized on the inner surface of the container, wherein the cooling means has a gas flow path through which a cooling gas flows, and the gas The flow path is formed in an internal space of an annular flow path portion disposed along the outer surface of the container, and the annular flow path portion has at least one direct cooling opening facing the outer surface of the container. It is characterized by that.

When providing a plurality of direct cooling openings in the annular flow passage portion, a plurality of rectangular regions arranged at equal intervals in the cooling gas flow direction are set on the inner peripheral wall of the annular flow passage portion. At least one of the direct cooling openings may be formed in each of the rectangular regions. In this way, since the direct cooling openings are regularly arranged, the temperature variation of the crystallization surface is reduced, and as a result, the crystallization amount is less likely to be biased.

The aluminum refining method according to the present invention for solving the problems includes a pouring process of pouring a molten aluminum material into a bottomed container, and passing a cooling gas into the internal space of the annular flow passage portion arranged so as to surround the container. A partial cooling process in which a part of the inner surface of the container is cooled to a temperature below the primary crystal point by flowing, and the primary crystal particles crystallized on the inner surface of the container are peeled off and deposited in the lower part of the container, An aluminum refining method comprising: a crystal growth process in which deposited primary crystal particle deposits are consolidated to grow aluminum crystals; and a molten metal discharge process in which the molten metal is discharged from a container . When the opening for direct cooling is provided in the peripheral wall, the surface area of the inner peripheral wall of the annular flow passage is P, and the total opening area of the direct cooling opening is Q, the value of Q / (P + Q) is 0.1 or less In the partial cooling process, at least a portion of the cooling gas flowing through the inner space of the annular flow path portion, and wherein the blowing directly on the outer surface of the container from the direct cooling openings.

Claims (10)

A bottomed container for containing molten aluminum,
Heating means for heating the container;
Cooling means for cooling a portion of the container;
An aluminum refining device comprising primary crystal peeling means for peeling primary crystal particles crystallized on the inner surface of the container,
The cooling means has a gas flow path through which a cooling gas flows,
The gas flow path is formed inside an annular flow path portion disposed along the outer surface of the container,
The said aluminum flow path part has an at least 1 direct cooling opening facing the outer surface of the said container, The aluminum refinement | purification apparatus characterized by the above-mentioned. The gas flow path is divided into a plurality of divided passages arranged vertically.
The aluminum purifier according to claim 1, wherein the flow direction of the cooling gas is reversed between one of the divided passages and the other divided passage adjacent thereto.   3. The aluminum refining device according to claim 2, wherein the direct cooling opening communicates with the divided passages other than the uppermost and lowermost divided passages. The annular channel portion has a plurality of direct cooling regions arranged at equal intervals in the flow direction of the cooling gas,
The aluminum refining device according to claim 1, wherein at least one of the direct cooling openings is formed in each of the plurality of direct cooling regions.   The value of Q / (P + Q) is 0.1 or less, where P is the surface area of the inner peripheral wall of the annular flow passage portion and Q is the total opening area of the direct cooling openings. The aluminum refining device according to any one of claims 1 to 4, wherein:   The value of Q / (P + Q) is 0.02 or less, where P is the surface area of the inner peripheral wall of the annular channel and Q is the total opening area of the direct cooling openings. The aluminum refining device according to any one of claims 1 to 4, wherein: A pouring process of pouring molten aluminum into a bottomed container;
A partial cooling process for cooling a part of the inner surface of the container to a temperature lower than the primary crystal point by allowing a cooling gas to flow through the gas flow path arranged so as to surround the container;
A crystal growth process in which the primary crystal particles crystallized on the inner surface of the container are peeled off and deposited on the lower part of the container, and the deposited primary crystal particles are pressed and solidified to grow aluminum crystals;
A molten metal discharging process for discharging the molten metal from a container,
In the partial cooling step, at least a part of the cooling gas flowing through the gas flow path is brought into direct contact with the outer surface of the container.   8. The aluminum refining method according to claim 7, wherein, in the molten metal discharging process, the molten metal is discharged from the container by inverting the container upside down. 8. The aluminum refining method according to claim 7, wherein, in the crystal growth process, the deposit is compacted at a pressure of 4.0 × 10 ^{4 to} 1.1 × 10 ⁵ (Pa). A peritectic element or peritectic element floated on the surface of the molten aluminum by adding at least one of boron and a boron-containing compound and blowing an oxidizing gas-containing gas into a raw aluminum melt containing peritectic elements as impurities Perform peritectic element separation process to remove compounds,
The aluminum purification method according to any one of claims 7 to 9, wherein in the pouring process, the molten metal obtained in the peritectic element separation process is poured into the container.

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