JPWO2013132644A1 - Semiconductor module - Google Patents

Abstract

The power semiconductor chip (10a, 20b) and the low power portion (90c), which consumes less power than the power semiconductor chip (10a), are provided on the predetermined surface (61) side of the conductive heat sink (60). It has been. A first plate-like insulating member (30ab) extends between the power semiconductor chip (10a, 20b) and the heat sink (60). A second plate-like insulating member (30c) extends between the low power part (90c) and the heat sink (60). Of the second plate-like insulating member (30c), the portion (33c) facing the low power portion (90c) is connected to the power semiconductor chip (10a, 20b) of the first plate-like insulating member (30ab). It is thicker than the facing part (33ab).

Description

  The present invention relates to a semiconductor module.

  In a conventional power semiconductor module, a power semiconductor chip, an insulating substrate, and a heat sink are stacked. Specifically, the insulating substrate is composed of plate-like insulating members having metal layers on both main surfaces, a power semiconductor chip is bonded to one metal layer, and a heat sink is bonded to the other metal layer. . The one metal layer is formed in a predetermined pattern having a portion for providing wiring in addition to the portion to which the power semiconductor chip is bonded.

  The heat sink is made of a metal such as copper. For this reason, the heat sink forms a capacitive electrical coupling with the power semiconductor chip via the plate-like insulating member, and the wiring (one of the plates on the plate-like insulating member as described above) via the plate-like insulating member. It also forms a capacitive electrical coupling (provided by the metal layer). Therefore, the power semiconductor chip and the wiring are capacitively coupled via the plate-like insulating member and the heat sink.

  Such capacitive coupling may be, for example, a path for transmitting noise accompanying the switching of the power semiconductor chip to the wiring. When noise transmitted to the wiring is applied from the wiring to the power semiconductor chip, there is a concern that the power semiconductor module may malfunction.

  The capacitive coupling between the power semiconductor chip and the wiring can be reduced by increasing the thickness of the plate-like insulating member. That is, the insulation between the power semiconductor chip and the wiring can be improved. However, when the plate-like insulating member is thickened, the thermal resistance increases, so that the heat dissipation of the power semiconductor chip is lowered.

  Note that the capacitive coupling through the plate-like insulating member and the heat sink may be formed between a plurality of power semiconductor chips, and in this case, the same problem as described above may occur.

  In view of this point, an object of the present invention is to provide a technique capable of ensuring both insulation and heat dissipation.

  A semiconductor module according to an aspect of the present invention includes a conductive heat sink, a power semiconductor chip provided on a predetermined surface side of the heat sink, and the power semiconductor provided on the predetermined surface side of the heat sink. A low power portion having lower power consumption than the chip, a first plate-like insulating member extending between the power semiconductor chip and the heat sink, and extending between the low power portion and the heat sink. And a second plate-like insulating member. The portion of the second plate-like insulating member that faces the low power portion is thicker than the portion of the first plate-like insulating member that faces the power semiconductor chip.

  According to the above aspect, the first plate-like insulating member can reduce the thermal resistance under the power semiconductor chip and ensure heat dissipation. At the same time, the second plate-like insulating member can reduce the capacitive coupling between the power semiconductor chip and the low power part via the first and second plate-like insulating members and the heat sink, and the power semiconductor chip and the low Insulation with the power section can be ensured.

  The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

2 is a cross-sectional view illustrating the semiconductor module according to the first embodiment. FIG. 4 is a top view illustrating the semiconductor module according to the first embodiment; FIG. FIG. 4 is a cross-sectional view illustrating a semiconductor module according to a second embodiment. FIG. 10 is a cross-sectional view illustrating a semiconductor module according to a modification of the second embodiment. FIG. 10 is a cross-sectional view illustrating a semiconductor module according to a modification of the first embodiment. FIG. 6 is a cross-sectional view illustrating a semiconductor module according to a third embodiment. FIG. 6 is a cross-sectional view illustrating a semiconductor module according to a fourth embodiment. FIG. 10 is a cross-sectional view illustrating a semiconductor module according to a fifth embodiment. FIG. 10 is a cross-sectional view illustrating a semiconductor module according to a sixth embodiment. FIG. 10 is a cross-sectional view illustrating a semiconductor module according to a seventh embodiment. FIG. 10 is a cross-sectional view illustrating a semiconductor module according to an eighth embodiment.

<Embodiment 1>
FIG. 1 illustrates a cross-sectional view of a power semiconductor module (hereinafter also referred to as a semiconductor module) 1 according to the first embodiment. 1, the semiconductor module 1 includes power semiconductor chips (hereinafter also referred to as semiconductor chips) 10a and 20b, plate-like insulating members 30ab and 30c, metal layers 40ab, 50ab, 40c and 50c, a heat sink. 60, joining members 72a, 72b, 74ab, 74c, and connecting members 82, 84, 86 are included.

  The power semiconductor chip 10a has chip main surfaces 11 and 12 that are opposite to each other (in other words, face each other through the inside of the chip). Similarly, the power semiconductor chip 20b also has chip main surfaces 21 and 22. Yes. 1, the chip main surfaces 11 and 21 are also referred to as chip upper surfaces (or upper surfaces) 11 and 21, and the chip main surfaces 12 and 22 are also referred to as chip lower surfaces (or lower surfaces) 12 and 22, respectively. The material of the semiconductor chips 10a and 20b is, for example, silicon (Si), but one or both of the semiconductor chips 10a and 20b are other materials, for example, so-called wide band gap materials such as silicon carbide (SiC) and gallium nitride (GaN). It may be constituted by.

  For example, power semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and diodes are built in the semiconductor chips 10a and 20b. The semiconductor chips 10a and 20b may be the same type of elements or different types of elements. In the case of an IGBT, for example, an IGBT emitter electrode and a gate electrode are provided on the chip upper surface 11, and an IGBT collector electrode is provided on the chip lower surface 12.

  Predetermined electrodes on the chip upper surfaces 11 and 21 are connected to each other by a connection member 82. The connecting member 82 is a bonding wire in the example of FIG. 1, but a conductive plate material or the like may be used. The chip lower surfaces 12 and 22 are bonded to a metal layer 40ab provided on the plate-like insulating member 30ab by bonding members 72a and 72b such as solder.

  The plate-like insulating member 30ab has main surfaces 31ab and 32ab that are in a relationship of front and back. In conformity with the illustration in FIG. 1, the main surface 31ab is also referred to as an upper surface 31ab, and the main surface 32ab is also referred to as a lower surface 32ab. Here, a case where the main surfaces 31ab and 32ab are flat surfaces and parallel to each other is illustrated, and in this case, the thickness of the plate-like insulating member 30ab is uniform over the entire member. The plate-like insulating member 30ab is made of an insulating material such as an epoxy resin or ceramic filled with a filler, for example.

  The metal layer 40ab is joined to the upper surface 31ab of the plate-like insulating member 30ab, and the metal layer 50ab is joined to the lower surface 32ab of the plate-like insulating member 30ab. The metal layers 40ab and 50ab are made of, for example, copper. The metal layers 40ab and 50ab function as a base for joining by joining members 72a, 72b, and 74ab such as solder. In the example of FIG. 1, the metal layer 40ab also functions as a wiring that connects the electrodes of the chip lower surfaces 12 and 22 to each other. If these functions are realizable, materials other than metal may be adopted.

  In addition, the laminated body of plate-shaped insulating member 30ab and metal layer 40ab, 50ab may be called an insulated substrate.

  The plate-like insulating member 30c has main surfaces 31c and 32c that are in a front-back relationship. In conformity with the illustration in FIG. 1, the main surface 31c is also referred to as an upper surface 31c, and the main surface 32c is also referred to as a lower surface 32c. Here, a case where the main surfaces 31c and 32c are flat surfaces and are parallel to each other is illustrated, and in this case, the thickness of the plate-like insulating member 30c is uniform over the entire member. The plate-like insulating member 30c is made of the same material as the plate-like insulating member 30ab, for example.

  The metal layer 40c is joined to the upper surface 31c of the plate-like insulating member 30c, and the metal layer 50c is joined to the lower surface 32c of the plate-like insulating member 30c. The metal layers 40c and 50c are made of the same material as the metal layers 40ab and 50ab, for example.

  The metal layer 40c is formed in a predetermined wiring pattern. Therefore, the metal layer 40c may be referred to as a wiring layer 40c, a wiring pattern 40c, or the like. In view of this point, the wiring layer 40c may be made of a conductive material other than metal. In the example of FIG. 1, the wiring pattern of the metal layer 40 c has three wiring portions 41, 42, and 43, and the wiring portions 42 and 43 are connected to the upper surface 11 of the semiconductor chip 10 a by connection members 84 and 86. The connection members 84 and 86 are bonding wires in the example of FIG. 1, but conductive plate materials or the like may be used.

  The metal layer 50c functions as a base for bonding by a bonding member 74c such as solder, and a material other than metal may be adopted as long as such a function can be realized.

  In addition, the laminated body of the plate-shaped insulating member 30c and the metal layers 40c and 50c may be called an insulating substrate.

  The heat sink 60 is made of a conductive material such as copper, for example. The heat sink 60 has a plate shape in the example of FIG. 1 and has main surfaces 61 and 62 that are in a relationship of front and back. In conformity with the illustration of FIG. 1, the main surface 61 is also referred to as an upper surface 61, and the main surface 62 is also referred to as a lower surface 62. Here, the case where the main surfaces 61 and 62 are flat surfaces is illustrated, but the lower surface 62 may have a fin shape, for example.

  On the upper surface 61 of the heat sink 60, plate-like insulating members 30ab and 30c are mounted. Specifically, the metal layer 50ab provided on the lower surface 32ab of the plate-like insulating member 30ab is joined to the upper surface 61 of the heat sink 60 by the joining member 74ab, and the metal layer provided on the lower surface 32c of the plate-like insulating member 30c. 50c is joined to the upper surface 61 of the heat sink 60 by the joining member 74c. The joining members 74ab and 74c are, for example, solder. According to this, the upper surface 61 of the heat sink 60 and the lower surfaces 32ab and 32c of the plate-like insulating members 30ab and 30c face each other.

  The configuration on the upper surface 61 of the heat sink 60 is accommodated in a sealing member such as a case (not shown) or a sealing resin. However, the lower surface 62 of the heat sink 60 is exposed from the sealing member. An external terminal (not shown) is pulled out from the sealing member.

  1 illustrates two semiconductor chips 10a and 20b, the semiconductor module 1 may include only one semiconductor chip, or may include three or more semiconductor chips. For example, when only the semiconductor chip 10a is provided, the semiconductor chip 20b, the joining member 72b, and the connecting member 82 are omitted from the example of FIG. Further, in the top view illustrated in FIG. 2, three combinations of the semiconductor chips 10a and 20b are illustrated. In the example of FIG. 2, three wiring portions 42 are provided on the plate-like insulating member 30 c, and a balance resistor 44 is connected between each wiring portion 42 and the wiring portion 41.

  Here, among the circuits mounted on the semiconductor module 1, the component 90c (including the wiring layer 40c in the example of FIG. 1 and disposed on the upper surface 31c of the plate-like insulating member 30c is included. In the example of FIG. The resistor 44 is low in power consumption (in other words, handled power) compared to the semiconductor chips 10a and 20b. For this reason, the component 90c is also referred to as a low power unit 90c.

  In the example of FIGS. 1 and 2, the low power unit 90c is a part that supplies a predetermined signal (for example, a control signal such as a gate signal) to the semiconductor chip 10a. The signal supply unit may include, for example, various circuits (for example, a circuit that generates a control signal for the semiconductor chip 10a from an external input signal). In addition to or instead of the signal supply unit, the low power unit 90c may include a signal acquisition unit that acquires a predetermined signal (for example, a signal related to the chip temperature) from one or both of the semiconductor chips 10a and 20b, for example. In addition, the low power portion 90c may further include, for example, a pad portion (which can be formed by the metal layer 40c) to which an external terminal is connected, or may include only such a pad portion.

  The connection between the external terminal and the semiconductor chips 10a and 20b can be realized by direct bonding or indirect connection through a bonding wire or the like without using the pad portion in the low power portion 90c. It is.

  As described above, the low power unit 90c can employ various configurations, but as described above, the power consumption is lower than that of the semiconductor chips 10a and 20b, and thus the heat generation is lower than that of the semiconductor chips 10a and 20b.

  According to the above configuration of the semiconductor module 1, both the semiconductor chips 10 a and 20 b and the low power portion 90 c are provided on the upper surface 61 side of the heat sink 60, and a plate shape is provided between the semiconductor chips 10 a and 20 b and the heat sink 60. The insulating member 30ab extends, and the plate-like insulating member 30c extends between the low power portion 90c and the heat sink 60. Further, the thickness tc of the portion 33c of the plate-like insulating member 30c facing the low power portion 90c is larger than the thickness tab of the portion 33ab of the plate-like insulating member 30ab facing the semiconductor chips 10a and 20b. Large (tc> tab).

  Accordingly, the thin plate-like insulating member 30ab for the semiconductor chips 10a and 20b can reduce the thermal resistance under the semiconductor chips 10a and 20b. Therefore, the heat dissipation of the semiconductor chips 10a and 20b can be ensured. Further, in view of the fact that the low power portion 90c generates less heat than the semiconductor chips 10a and 20b, by adopting the thick plate insulating member 30c for the low power portion 90c, the plate insulating members 30ab and 30c and the heat sink 60 are used. Capacitive coupling between the semiconductor chips 10a and 20b and the low power unit 90c via the semiconductor device can be reduced. Therefore, insulation between the semiconductor chips 10a and 20b and the low power part 90c can be ensured. Thus, according to the semiconductor module 1, both heat dissipation and insulation can be ensured.

  In the example of FIG. 1, the plate-like insulating members 30ab and 30c are separated from each other, but these plate-like insulating members 30ab and 30c may be in contact with each other. Such modifications can also be applied to various semiconductor modules described later.

<Embodiment 2>
FIG. 3 illustrates a cross-sectional view of the semiconductor module 1B according to the second embodiment. The semiconductor module 1B has a configuration in which the plate-like insulating members 30ab and 30c are changed to the plate-like insulating member 30abc in the semiconductor module 1 (see FIG. 1) exemplified in the first embodiment. The other configuration of the semiconductor module 1B is basically the same as that of the semiconductor module 1.

  The plate-like insulating member 30abc roughly corresponds to a member obtained by integrating the plate-like insulating members 30ab and 30c (see FIG. 1) exemplified in the first embodiment. That is, the plate-like insulating member 30abc extends between the semiconductor chips 10a and 20b and the heat sink 60, and also extends between the low power portion 90c and the heat sink 60. The plate-like insulating member 30abc has main surfaces 31abc and 32abc that are in a relationship of front and back. In conformity with the illustration of FIG. 3, the main surface 31abc is also referred to as an upper surface 31abc, and the main surface 32abc is also referred to as a lower surface 32abc.

  In the common plate-like insulating member 30abc, the thickness tc of the portion 33c facing the low power portion 90c is larger than the thickness tab of the portion 33ab facing the semiconductor chips 10a and 20b (tc> tab). In the example of FIG. 3, in the upper surface 31abc of the plate-like insulating member 30abc, the region facing the semiconductor chips 10a and 20b is located closer to the lower surface 32abc than the region facing the low power part 90c. In the example of FIG. 3, all the regions are flat. On the other hand, the lower surface 32abc of the plate-like insulating member 30abc is flat in the example of FIG. Due to the shapes of the upper surface 31abc and the lower surface 32abc, different thicknesses are formed in the common plate-like insulating member 30abc.

  Such a difference in thickness can be formed, for example, by rolling the plate-like insulating member before curing in two stages. Specifically, the plate-like insulating member before curing is first rolled according to the thickness of the thick portion 33c, and then the predetermined portion is rolled again according to the thickness of the thin portion 33ab.

  According to the semiconductor module 1 </ b> B, both heat dissipation and insulation can be secured in the same manner as the semiconductor module 1. Specifically, the thermal resistance under the semiconductor chips 10a and 20b can be reduced by the thin portion 33ab facing the semiconductor chips 10a and 20b in the plate-like insulating member 30abc. Therefore, the heat dissipation of the semiconductor chips 10a and 20b can be ensured. Further, capacitive coupling between the semiconductor chips 10a, 20b and the low power portion 90c via the plate-like insulating member 30abc and the heat sink 60 is performed by the thick portion 33c of the plate-like insulating member 30abc facing the low power portion 90c. Can be reduced. Therefore, insulation between the semiconductor chips 10a and 20b and the low power part 90c can be ensured.

  The metal layers 50ab and 50c on the lower surface 32abc side of the plate-like insulating member 30abc can be changed to a continuous metal layer. In that case, the joining members 74ab and 74c can be changed to a continuous joining member. Such modifications can also be applied to various semiconductor modules described later.

<Modification of Embodiments 1 and 2>
The semiconductor module 1B illustrated in FIG. 3 has a protruding portion 34 at the end of the upper surface 31abc of the plate-like insulating member 30abc. The protruding portion 34 is provided so as to surround the thin portion 33ab facing the semiconductor chips 10a and 20b. In addition, although the thickness of the protrusion part 34 is set to tc in the example of FIG. 3, it is not limited to this example.

  On the other hand, the protruding portion 34 can be omitted as in the semiconductor module 1C according to the modification of the second embodiment illustrated in FIG.

  According to the protruding portion 34, it is possible to increase the creepage distance between the upper surface 31abc side and the lower surface 32abc side of the thin portion 33ab (distance through the end surface of the plate-like insulating member 30abc). Therefore, it is possible to ensure creeping insulation between the potential on the upper surface 31abc side and the potential on the lower surface 32abc side.

  On the other hand, when the protruding portion 34 is not provided, the shape of the plate-like insulating member 30abc is simplified, and the plate-like insulating member 30abc can be easily manufactured.

  The protruding portion 34 can also be employed in the semiconductor module 1 exemplified in the first embodiment. FIG. 5 illustrates a semiconductor module 1D with such a modification. In the example of FIG. 5, the protruding portion 34 is provided at the end of the upper surface 31ab of the plate-like insulating member 30ab for the semiconductor chips 10a and 20b.

<Embodiment 3>
A semiconductor chip made of a so-called wide band gap material such as silicon carbide (SiC) or gallium nitride (GaN) can operate at a higher temperature than a semiconductor chip made of silicon (Si). In other words, the wide band gap semiconductor provides a chip with high heat resistance. In the third embodiment, a semiconductor module in which semiconductor chips having different heat resistance are mixed will be described. Hereinafter, the semiconductor chip having higher heat resistance is also referred to as a high heat resistance chip, and the semiconductor chip having lower heat resistance is also referred to as a low heat resistance chip for convenience.

  FIG. 6 illustrates a cross-sectional view of a semiconductor module 1E according to the third embodiment. The semiconductor module 1E has a configuration in which the semiconductor chip 20b in the semiconductor module 1 (see FIG. 1) exemplified in the first embodiment is changed to a high heat resistant chip 25b having higher heat resistance than the semiconductor chip 10a. In this example, hereinafter, the semiconductor chip 10a is also referred to as a low heat resistant chip 10a. Further, in the semiconductor module 1E, the plate-like insulating member 30ab and the like exemplified in the first embodiment are divided for the low heat resistant chip 10a and the high heat resistant chip 25b. The other configuration of the semiconductor module 1E is basically the same as that of the semiconductor module 1.

  Specifically, the plate-like insulating member 30a for the low heat-resistant chip 10a has main surfaces 31a and 32a that are in a front-back relationship. In conformity with the illustration of FIG. 6, the main surface 31a is also referred to as an upper surface 31a, and the main surface 32a is also referred to as a lower surface 32a. Here, the case where the main surfaces 31a and 32a are flat surfaces and are parallel to each other is illustrated, and in this case, the thickness of the plate-like insulating member 30a is uniform over the entire member.

  A metal layer 40a is bonded to the upper surface 31a of the plate-like insulating member 30a, and the metal layer 40a is bonded to the lower surface 12 of the low heat resistant chip 10a by the bonding member 72a. Further, the metal layer 50a is bonded to the lower surface 32a of the plate-like insulating member 30a, and the metal layer 50a is bonded to the upper surface 61 of the heat sink 60 by the bonding member 74a.

  Further, the plate-like insulating member 35b for the high heat-resistant chip 25b has main surfaces 36b and 37b which are in a relationship of front and back. In conformity with the illustration of FIG. 6, the main surface 36b is also referred to as an upper surface 36b, and the main surface 37b is also referred to as a lower surface 37b. Here, a case where the main surfaces 36b and 37b are flat surfaces and parallel to each other is illustrated, and in this case, the thickness of the plate-like insulating member 35b is uniform over the entire member.

  A metal layer 40b is bonded to the upper surface 36b of the plate-like insulating member 35b, and the metal layer 40b is bonded to the lower surface 22 of the high heat resistant chip 25b by the bonding member 72b. The metal layer 50b is bonded to the lower surface 37a of the plate-like insulating member 35b, and the metal layer 50b is bonded to the upper surface 61 of the heat sink 60 by the bonding member 74b.

  In addition, the laminated body of the plate-shaped insulating member 30a and the metal layers 40a and 50a and the laminated body of the plate-shaped insulating member 35b and the metal layers 40b and 50b may be respectively referred to as an insulating substrate.

  According to the above configuration of the semiconductor module 1E, the plate-like insulating member 30a extends between the low heat-resistant chip 10a and the heat sink 60, and the plate-like insulating member between the high heat-resistant chip 25b and the heat sink 60. 35 b extends, and the plate-like insulating member 30 c extends between the low power portion 90 c and the heat sink 60.

  In addition, the thickness tc of the portion 33c of the plate-like insulating member 30c facing the low power portion 90c is larger than the thickness ta of the portion 33a of the plate-like insulating member 30a facing the low heat resistant chip 10a. Large (tc> ta). Further, the thickness tb of the portion 38b of the plate-like insulating member 35b facing the high heat-resistant chip 25b is compared with the thickness ta of the portion 33a of the plate-like insulating member 30a facing the low heat-resistant chip 10a. Large (tb> ta). In the example of FIG. 6, tb = tc, but is not limited to this example.

  According to the semiconductor module 1E, the relationship between the low heat resistance chip 10a, the low power portion 90c, the plate-like insulating members 30a and 30c, and the heat sink 60 is the same as that in the first embodiment. Has the same effect as.

  In particular, the plate-like insulating member 35b for the high heat-resistant chip 25b is thicker than the plate-like insulating member 30a for the low heat-resistant chip 10a, so that the high-heat-resistant chip 25b and the heat sink 60 are interposed via the plate-like insulating member 35b. The capacitive coupling can be reduced as compared with the capacitive coupling between the low heat resistant chip 20a and the heat sink 60 via the plate-like insulating member 30a. Therefore, it is possible to ensure insulation between the high heat resistance chip 25b and the low power portion 90c, and further insulation between the high heat resistance chip 25b and the low heat resistance chip 10a.

  Here, the thick plate-like insulating member 35b increases the thermal resistance, but the high heat-resistant chip 25b can operate at a higher temperature than the low heat-resistant chip 10a. It can be secured.

<Embodiment 4>
FIG. 7 illustrates a cross-sectional view of a semiconductor module 1F according to the fourth embodiment. The semiconductor module 1F has a configuration in which the plate-like insulating members 30a, 35b, and 30c are changed to the plate-like insulating member 35abc in the semiconductor module 1E exemplified in the third embodiment (see FIG. 6). The other configuration of the semiconductor module 1F is basically the same as that of the semiconductor module 1E.

  The plate-like insulating member 35abc roughly corresponds to a member obtained by integrating the plate-like insulating members 30a, 35b, and 30c (see FIG. 6) exemplified in the third embodiment. That is, the plate-like insulating member 35abc extends between the low heat resistant chip 10a and the heat sink 60, further extends between the low power portion 90c and the heat sink 60, and further, the high heat resistant chip 25b and the heat sink. 60 also extends. The plate-like insulating member 35abc has main surfaces 36abc and 37abc that are in a front-back relationship. In conformity with the illustration in FIG. 7, the main surface 36abc is also referred to as an upper surface 36abc, and the main surface 37abc is also referred to as a lower surface 37abc.

  The thickness tc of the portion 33c of the plate-like insulating member 35abc facing the low power portion 90c is larger than the thickness ta of the portion 33a of the plate-like insulating member 35abc facing the low heat resistant chip 10a ( tc> ta). Further, the thickness tb of the portion 38b of the plate-like insulating member 35abc facing the high heat-resistant chip 25b is compared with the thickness ta of the portion 33a of the plate-like insulating member 35abc facing the low heat-resistant chip 10a. Large (tb> ta). In the example of FIG. 7, tb = tc, but is not limited to this example.

  In the example of FIG. 7, in the upper surface 36abc of the plate-like insulating member 35abc, the region facing the low heat resistant chip 10a is lower than the region facing the low power portion 90c and the region facing the high heat resistant chip 25b. It is located near 37bac. In the example of FIG. 7, all the regions are flat. On the other hand, the lower surface 37abc of the plate-like insulating member 35abc is flat in the example of FIG. Depending on the shape of the upper surface 36abc and the lower surface 37abc, different thicknesses are formed in the common plate-like insulating member 35abc. Such a difference in thickness can be formed, for example, in the same manner as the plate-like insulating member 30abc (see FIG. 3) exemplified in the second embodiment.

  According to the semiconductor module 1F, the relationship between the low heat resistance chip 10a, the high heat resistance chip 25b, the low power portion 90c, the plate-like insulating member 35abc, and the heat sink 60 is the same as that in the third embodiment. The same effect as in the third embodiment is obtained.

<Embodiment 5>
FIG. 8 illustrates a cross-sectional view of a semiconductor module 1G according to the fifth embodiment. The semiconductor module 1G has a configuration in which the plate-like insulating members 30a and 30c are changed to plate-like insulating members 30ac in the semiconductor module 1E exemplified in the third embodiment (see FIG. 6). The other configuration of the semiconductor module 1G is basically the same as that of the semiconductor module 1E.

  The plate-like insulating member 30ac schematically corresponds to a member obtained by integrating the plate-like insulating members 30a and 30c (see FIG. 6) exemplified in the third embodiment. That is, the plate-like insulating member 30ac extends between the low heat resistant chip 10a and the heat sink 60 and also extends between the low power portion 90c and the heat sink 60. The plate-like insulating member 30ac has main surfaces 31ac and 32ac that are in a front-back relationship. In conformity with the illustration of FIG. 8, the main surface 31ac is also referred to as an upper surface 31ac, and the main surface 32ac is also referred to as a lower surface 32ac.

  The thickness tc of the portion 33c of the plate-like insulating member 30ac facing the low power portion 90c is larger than the thickness ta of the portion 33a of the plate-like insulating member 30ac facing the low heat resistant chip 10a ( tc> ta). In the example of FIG. 8, in the upper surface 31ac of the plate-like insulating member 30ac, the region facing the low heat resistant chip 10a is located closer to the lower surface 32ac than the region facing the low power portion 90c. In the example of FIG. 8, all the regions are flat. On the other hand, the lower surface 32ac of the plate-like insulating member 30ac is flat in the example of FIG. Depending on the shape of the upper surface 31ac and the lower surface 32ac, different thicknesses are formed in the common plate-like insulating member 30ac. Such a difference in thickness can be formed, for example, in the same manner as the plate-like insulating member 30abc (see FIG. 3) exemplified in the second embodiment.

  According to the semiconductor module 1G, the relationship between the low heat resistance chip 10a, the high heat resistance chip 25b, the low power portion 90c, the plate-like insulating members 30ac and 35b, and the heat sink 60 is the same as that in the third embodiment. 1G has the same effect as the third embodiment.

<Embodiment 6>
FIG. 9 illustrates a cross-sectional view of a semiconductor module 1H according to the sixth embodiment. The semiconductor module 1H has a configuration in which the plate-like insulating members 30a and 35b are changed to plate-like insulating members 35ab in the semiconductor module 1E exemplified in the third embodiment (see FIG. 6). The other configuration of the semiconductor module 1H is basically the same as that of the semiconductor module 1E.

  The plate-like insulating member 35ab roughly corresponds to a member obtained by integrating the plate-like insulating members 30a and 35b (see FIG. 6) exemplified in the third embodiment. That is, the plate-like insulating member 35ab extends between the low heat resistant chip 10a and the heat sink 60 and also extends between the high heat resistant chip 25b and the heat sink 60. The plate-like insulating member 35ab has main surfaces 36ab and 37ab that are in a relationship of front and back. In conformity with the illustration of FIG. 9, the main surface 36ab is also referred to as an upper surface 36ab, and the main surface 37ab is also referred to as a lower surface 37ab.

  The thickness tb of the portion 38b of the plate-like insulating member 35ab facing the high heat resistant chip 25b is larger than the thickness ta of the portion 33a of the plate-like insulating member 35ab facing the low heat resistant chip 10a. (Tb> ta). In the example of FIG. 9, in the upper surface 36ab of the plate-like insulating member 35ab, the region facing the low heat resistant chip 10a is located closer to the lower surface 37ab than the region facing the high heat resistant chip 25b. In the example of FIG. 9, all the regions are flat. On the other hand, the lower surface 37ab of the plate-like insulating member 35ab is flat in the example of FIG. Due to such shapes of the upper surface 36ab and the lower surface 37ab, different thicknesses are formed in the common plate-like insulating member 35ab. Such a difference in thickness can be formed, for example, in the same manner as the plate-like insulating member 30abc (see FIG. 3) exemplified in the second embodiment.

  According to the semiconductor module 1H, the relationship between the low heat resistance chip 10a, the high heat resistance chip 25b, the low power portion 90c, the plate-like insulating members 35ab and 30c, and the heat sink 60 is the same as that in the third embodiment. 1H has the same effect as the third embodiment.

<Embodiment 7>
FIG. 10 illustrates a cross-sectional view of a semiconductor module 1I according to the seventh embodiment. In the semiconductor module 1I, the low power portion 90c, the plate-like insulating member 30c, the metal layer 50c, the joining member 74c, and the connecting members 84 and 86 are omitted from the semiconductor module 1E illustrated in the third embodiment (see FIG. 6). It has a configuration. The other configuration of the semiconductor module 1I is basically the same as that of the semiconductor module 1E.

  The configuration of the semiconductor module 1I omits the low power portion 90c, the metal layer 50c, the joining member 74c, and the connecting members 84 and 86 from the semiconductor module 1G illustrated in the fifth embodiment (see FIG. 8). It can also be understood that the thick portion 33c for the low power portion 90c is omitted from the plate-like insulating member 30ac.

  According to the semiconductor module 1I, the relationship between the low heat resistant chip 10a, the high heat resistant chip 25b, the plate-like insulating members 30a and 35b, and the heat sink 60 is the same as that in the third embodiment. 3 has the same effect.

<Eighth embodiment>
FIG. 11 illustrates a cross-sectional view of a semiconductor module 1J according to the eighth embodiment. The semiconductor module 1J omits the low power portion 90c, the plate-like insulating member 30c, the metal layer 50c, the joining member 74c, and the connecting members 84 and 86 from the semiconductor module 1H illustrated in the sixth embodiment (see FIG. 9). It has a configuration. The other configuration of the semiconductor module 1J is basically the same as that of the semiconductor module 1H.

  The configuration of the semiconductor module 1J omits the low power portion 90c, the metal layer 50c, the joining member 74c, and the connection members 84 and 86 from the semiconductor module 1F illustrated in the fourth embodiment (see FIG. 7). It can also be understood that the thick portion 33c for the low power portion 90c is omitted from the plate-like insulating member 35abc.

  According to the semiconductor module 1J, the relationship between the low heat resistant chip 10a, the high heat resistant chip 25b, the plate-like insulating member 35ab, and the heat sink 60 is the same as that in the third embodiment. The same effect is produced.

<Modifications of Embodiments 3 to 8>
The protruding portion 34 (see FIGS. 3 and 5) exemplified in the modification of the first and second embodiments can also be adopted in the third to eighth embodiments.

<Modification of Embodiments 1-8>
The present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

  1,1B-1J Semiconductor module, 10a, 20b Power semiconductor chip, 25b High heat resistance chip, 30ab, 30c, 30abc, 30a, 35b, 35abc, 30ac, 35ab Plate-shaped insulating member, 60 Heat sink, 61 Main surface (predetermined surface ), 90c Low power portion, 33ab, 33a The portion facing the power semiconductor chip, 33c The portion facing the low power portion, 38b The portion facing the high heat resistant chip, tab, tc, ta, tb thickness.

Claims (8)

A conductive heat sink (60);
Power semiconductor chips (10a, 20b) provided on the predetermined surface (61) side of the heat sink (60);
A low power portion (90c) provided on the predetermined surface (61) side of the heat sink (60) and having lower power consumption than the power semiconductor chips (10a, 20b);
A first plate-like insulating member (30ab, 30a, 35ab) extending between the power semiconductor chip (10a, 20b) and the heat sink (60);
A second plate-like insulating member (30c) extending between the low power part (90c) and the heat sink (60),
Of the second plate-like insulating member (30c), the portion (33c) facing the low power portion (90c) is the power of the first plate-like insulating member (30ab, 30a, 35ab). The semiconductor module (1, 1D, 1E, 1H) is thicker than the portions (33ab, 33a) facing the semiconductor chip (10a, 20b). A high heat resistant chip (25b) which is provided on the predetermined surface (61) side of the heat sink (60) and has higher heat resistance than the power semiconductor chip (10a);
A third plate-like insulating member (35b) extending between the high heat-resistant chip (25b) and the heat sink (60);
Of the third plate-like insulating member (35b), the portion (38b) facing the high heat-resistant chip (25b) is the power semiconductor chip (30b) of the first plate-like insulating member (30a). The semiconductor module (1E) according to claim 1, which is thicker than said part (33a) facing 10a). A heat-resistant chip (25b) which is provided on the predetermined surface (61) side of the heat sink (60) and has higher heat resistance than the power semiconductor chip (10a);
The first plate-like insulating member (35ab) also extends between the high heat resistant chip (25b) and the heat sink (60),
Of the first plate-like insulating member (35ab), the portion (38b) facing the high heat-resistant chip (25b) is the power semiconductor chip (35ab) of the first plate-like insulating member (35ab). The semiconductor module (1H) according to claim 1, which is thicker than said part (33a) facing 10a). A conductive heat sink (60);
Power semiconductor chips (10a, 20b) provided on the predetermined surface (61) side of the heat sink (60);
A low power portion (90c) provided on the predetermined surface (61) side of the heat sink (60) and having lower power consumption than the power semiconductor chips (10a, 20b);
A common plate-like insulating member extending between the power semiconductor chip (10a, 20b) and the heat sink (60) and extending between the low power portion (90c) and the heat sink (60). (30abc, 35abc, 30ac)
Of the common plate-like insulating members (30abc, 35abc, 30ac), a portion (33c) facing the low power portion (90c) is formed of the common plate-like insulating members (30abc, 35abc, 30ac). Semiconductor modules (1B, 1C, 1F, 1G) which are thicker than the portions (33ab, 33a) facing the power semiconductor chips (10a, 20b). A heat-resistant chip (25b) which is provided on the predetermined surface (61) side of the heat sink (60) and has higher heat resistance than the power semiconductor chip (10a);
The common plate-like insulating member (35abc) also extends between the high heat resistant chip (25b) and the heat sink (60),
Of the common plate-like insulating member (35abc), the portion (38b) facing the high heat-resistant chip (25b) is formed of the power semiconductor chip (10a) among the common plate-like insulating member (35abc). The semiconductor module (1 F) according to claim 4, which is thicker than the portion (33 a) facing the substrate. A high heat resistant chip (25b) which is provided on the predetermined surface (61) side of the heat sink (60) and has higher heat resistance than the power semiconductor chip (10a);
And further comprising another plate-like insulating member (35b) extending between the high heat-resistant chip (25b) and the heat sink (60),
Of the other plate-like insulating member (35b), the portion (38b) facing the high heat-resistant chip (25b) is the power semiconductor chip (10a) of the common plate-like insulating member (30ac). The semiconductor module (1G) according to claim 4, wherein the semiconductor module (1G) is thicker than the portion (33a) facing the surface. A conductive heat sink (60);
A power semiconductor chip (10a) provided on the predetermined surface (61) side of the heat sink (60);
A high heat resistant chip (25b) which is provided on the predetermined surface (61) side of the heat sink (60) and has higher heat resistance than the power semiconductor chip (10a);
Plate-like insulating members (30a, 30ac) extending between the power semiconductor chip (10a) and the heat sink (60);
Another plate-like insulating member (35b) extending between the high heat-resistant chip (25b) and the heat sink (60);
Of the another plate-like insulating member (35b), the portion (38b) facing the high heat-resistant chip (25b) is the power semiconductor chip (10a) of the plate-like insulating members (30a, 30ac). The semiconductor module (1E, 1G, 1I) is thicker than the portion (33a) facing the surface. A conductive heat sink (60);
A power semiconductor chip (10a) provided on the predetermined surface (61) side of the heat sink (60);
A high heat resistant chip (25b) which is provided on the predetermined surface (61) side of the heat sink (60) and has higher heat resistance than the power semiconductor chip (10a);
A common plate-like insulating member extending between the power semiconductor chip (10a) and the heat sink (60) and extending between the high heat resistant chip (25b) and the heat sink (60). 35abc, 35ab),
Of the common plate-like insulating members (35abc, 35ab), the portion (38b) facing the high heat-resistant chip (25b) is the power semiconductor among the common plate-like insulating members (35abc, 35ab). A semiconductor module (1F, 1H, 1J) thicker than the part (33a) facing the chip (10a).

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