JPWO2005083759A1 - Exposure apparatus and method for manufacturing device having fine pattern - Google Patents

Exposure apparatus and method for manufacturing device having fine pattern Download PDF

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JPWO2005083759A1
JPWO2005083759A1 JP2006510548A JP2006510548A JPWO2005083759A1 JP WO2005083759 A1 JPWO2005083759 A1 JP WO2005083759A1 JP 2006510548 A JP2006510548 A JP 2006510548A JP 2006510548 A JP2006510548 A JP 2006510548A JP WO2005083759 A1 JPWO2005083759 A1 JP WO2005083759A1
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exposure apparatus
opening
gas
optical system
apparatus according
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青木 貴史
貴史 青木
透 磯上
透 磯上
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株式会社ニコン
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Priority to JP2004053265 priority
Priority to JP2004325843 priority
Priority to JP2004325843 priority
Priority to JP2004378441 priority
Priority to JP2004378441 priority
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Priority to PCT/JP2005/003803 priority patent/WO2005083759A1/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Abstract

The lower part of the projection optical system chamber 5 prevents most of the resist emission gas from entering the projection optical system. In addition, an air supply tube 7 and an air supply port 8 at its tip, and an exhaust tube 9 and an air outlet 10 at its tip are installed in the working distance (the space below the chamber of the projection optical system and above the wafer 3). Has been. High-purity purge gas that does not cause a photochemical reaction with EUV light is supplied from the supply port 8, and most of the purge gas is discharged from the exhaust port 10. Although the resist discharge gas 6 generated by the EUV irradiation moves upward, it is carried away so as to be entangled on this purge gas flow, so that almost all of the resist discharge gas 6 enters the projection optical system. Nothing will happen.

Description

  The present invention uses extreme ultraviolet rays or soft X-rays (in the present specification and claims, means light having a wavelength of 150 nm or less, sometimes referred to as “EUV (Extreme Ultraviolet) light”) as an exposure light source. The present invention relates to an exposure apparatus to be used, and a method for manufacturing a device having a fine pattern using these.

When a semiconductor element or a liquid crystal display element is manufactured by a photolithography process, a pattern image formed on a mask (including a reticle in the present specification and claims) is transferred to a photosensitive material (through a projection optical system). 2. Description of the Related Art A reduction projection exposure apparatus that reduces and projects each projection (shot) area on a wafer coated with a resist is used. Circuits such as semiconductor elements and liquid crystal display elements are transferred by exposing a circuit pattern onto a wafer or glass with the projection exposure apparatus, and are formed by post-processing.
In recent years, high density integration of integrated circuits, that is, miniaturization of circuit patterns has been promoted. In order to cope with this, the projection light in the projection exposure apparatus also tends to be shortened in wavelength. That is, KrF excimer laser (248 nm) has been used in place of the emission lines of mercury lamps that have been the mainstream until now, and projection exposure apparatuses using a shorter wavelength ArF excimer laser (193 nm) have been put into practical use. . Development of an exposure apparatus using an F2 laser (157 nm) and an optical exposure apparatus having a liquid immersion mechanism are also being promoted for further high-density integration.
Furthermore, in order to improve the resolving power of an optical system limited by the diffraction limit of light, projection lithography using EUV light having a shorter wavelength (11 to 14 nm) instead of conventional ultraviolet rays has been developed. This technique is called EUV lithography and is expected as a technique capable of obtaining a resolution of 45 nm or less, which cannot be realized by conventional optical lithography.
FIG. 11 shows an outline of the projection optical system of such an exposure apparatus (EUV exposure apparatus) using EUV light. The EUV light 32 emitted from the light source 31 becomes a substantially parallel light beam through a concave reflecting mirror 34 that acts as a collimator mirror, and enters an optical integrator 35 including a pair of fly-eye mirrors 35a and 35b.
Thus, a substantial surface light source having a predetermined shape is formed in the vicinity of the reflective surface of the fly-eye mirror 35b, that is, in the vicinity of the exit surface of the optical integrator 35. The light from the substantial surface light source is deflected by the plane reflecting mirror 36 and then forms an elongated arc-shaped illumination area on the mask M. Here, an aperture plate for forming an arcuate illumination region is not shown.
The light reflected by the surface of the mask M is then sequentially reflected by the mirrors M1, M2, M3, M4, M5, and M6 of the projection optical system 37, and the pattern image formed on the surface of the mask M is converted into a wafer. It is formed on the resist 39 applied on the surface 38. These optical systems are housed in the chamber 40, and the chamber 40 is kept in a high vacuum state. Among them, the projection optical system chamber 37 is particularly kept in a higher vacuum state. ing. For this reason, the vacuum chamber 40 is evacuated by the vacuum pump 43, and the projection optical system chamber 37 is evacuated by the vacuum pump 42 to achieve a high degree of vacuum.
In general, EUV light is absorbed by any substance and does not pass through the air. For this reason, in an exposure apparatus using EUV light, in order to allow exposure light to reach the wafer surface with sufficient illuminance, it is necessary to reduce or eliminate light-absorbing substances on the exposure optical path and maintain the optical path space at a high vacuum. is there. For this purpose, it is necessary to construct the optical path space of the exposure apparatus using a substance that emits as little gas as possible. As described above, the exposure apparatus using EUV light is capable of transferring a finer light-shielding pattern, but has a design in which it is necessary to exclude the light-absorbing substance (use of a member that emits the light-absorbing substance is limited). Not easy.

In exposure transfer of patterns such as semiconductor circuits, it is necessary to apply a photosensitive agent called a resist on the wafer surface. As the problem has become apparent in conventional light exposure systems, the substance released in large quantities from the resist during exposure is a substance that absorbs a lot of light, and is absorbed on the surface of an optical element such as a mirror to reduce the amount of exposure light. The optical performance is remarkably deteriorated, such as reducing or increasing the illuminance unevenness.
The resist is composed of a photosensitizer, a solvent, an acid generator, and the like, all of which have an organic substance as a main component. Further, when the resist is irradiated with high-intensity exposure light, its components are released into the exposure space.
In particular, in an exposure apparatus using EUV light, since the energy of exposure light is high, the resist material (for example, a solvent material contained in the resist) is easily broken, and the number of molecules is relatively small, that is, the vapor pressure is low. High material is produced in the resist. This substance reaches the resist surface by thermal diffusion within the resist, and is eventually released as a gas into the exposure optical path space in a process similar to evaporation. Since there is nothing to block between the optical element (reflection mirror) in the projection optical system and the resist, and this space is kept at a high vacuum, this emitted gas is emitted within a certain solid angle. Adheres to the reflecting mirror surface in the projection optical system without being blocked, causing contamination. Even gas released outside a certain solid angle may adhere to the mirror surface by, for example, being detached after being attached to the inner wall of the lens barrel.
That is, the gas released from the resist is released to the projection optical system 37 in FIG. 11, enters the chamber of the projection optical system 37, and adheres to the mirror surface as a contaminant. The adhered contaminant material forms a dense carbon (C) film by a photochemical reaction with exposure light or photoelectrons, and causes light absorption (decrease in the reflectivity of the mirror). Moreover, if the adhesion of the contaminant substance is non-uniform, it can cause uneven illumination. Contaminants as used herein include hydrocarbons such as methane, ethane, propane and butane, linear organic substances such as isopropyl alcohol and polymethyl methacrylate, cyclic organic substances such as phthalic acid esters having a benzene ring, silane, siloxane, etc. Si-containing organic substances, etc.
The state of the gas released from the resist will be described with reference to FIG. FIG. 12 is a schematic diagram showing a configuration in the vicinity of the wafer of the EUV light exposure apparatus shown in FIG. The configuration of the portion not shown is the same as that of the EUV light exposure apparatus shown in FIG.
The EUV light is reflected by the mirrors M5 and M6, and an image of a pattern formed on a mask (not shown) is formed on the resist 39 applied to the wafer. Since EUV light is absorbed by almost all substances, the exposure space is kept at a high degree of vacuum, for example, 10 −5 Pa. The exposure light is irradiated onto the resist 39. At this time, a large amount of the resist discharge gas 41 is released from the resist 39.
Of the resist release gas 41, the one released within a certain solid angle adheres to the surface of the mirror M6 without being blocked. Even gas released outside a certain solid angle may adhere to the surfaces of the mirrors M5 and M6 by, for example, being detached after being attached to the inner wall of the lens barrel. The released gas substance adhering to the mirror surface changes into a dense C film by reaction with exposure light or photoelectrons.
The thickness of the C film increases as the exposure time increases, and the reflectivity of the mirror multi-layer (Si / Mo multi-layer) decreases as the exposure time increases (the reflectivity decreases when a 1 nm carbon layer is deposited on the mirror surface). 1%), aberrations occur, and illuminance unevenness occurs, resulting in deterioration of optical characteristics. Furthermore, a decrease in reflectivity results in a decrease in throughput and significantly reduces the productivity of the apparatus. The target of the reflectance reduction amount is about 1% / surface. Also, in the EUV light exposure apparatus, unlike the conventional exposure apparatus, since the gas path space is not filled with gas, it is not easy to exclude the released gas by airflow control. From the above, it is necessary to reduce the partial pressure in the optical path space of the contaminant material.
The present invention has been made to solve such a problem, and the purge gas is introduced into the projection optical system while suppressing the deterioration of optical characteristics by minimizing the adhesion of contaminants to the optical elements of the projection optical system. It is an object of the present invention to provide an EUV light exposure apparatus having a long life until overhaul by reducing the amount of penetration and a method for manufacturing a device having a fine pattern using this exposure method.
A first invention for achieving the above object is an exposure apparatus for exposing and transferring a pattern formed on a mask onto a sensitive substrate such as a wafer using extreme ultraviolet light, the pattern formed on the mask. A projection optical system for projecting on the sensitive substrate, a vacuum chamber surrounding the projection optical system, an opening arranged in the vacuum chamber for passing extreme ultraviolet light toward the sensitive substrate, and applied to the sensitive substrate An extreme ultraviolet exposure apparatus comprising: an air supply port for supplying a gas for purging a resist discharge gas generated from the resist; and an exhaust port for exhausting the purge gas.
In the present invention, the gas is supplied from the air supply port, and the gas is exhausted through the exhaust port, whereby the resist emission gas is drawn into the gas flow, and the resist emission gas enters the optical system in the chamber of the projection optical system. Drain out of the system before reaching. As a result, it is possible to reduce the resist emission gas containing the contaminant substance entering the chamber of the projection optical system, so that the adhesion of the contaminant substance to the mirror can be reduced, and the decrease in the reflectivity of the mirror can be mitigated. Therefore, it is possible to obtain an EUV exposure apparatus that suppresses deterioration of optical characteristics or has a long lifetime until overhaul.
In the following inventions including the present invention, the “exhaust port” is a vacuum exhaust port generally used for maintaining a high degree of vacuum in the chamber or the space between the chamber and the wafer. You may use, and you may provide separately. In particular, if a special exhaust port is provided facing the air supply port, the effect is great.
A second invention for achieving the object is the first invention, wherein the degree of vacuum of the space in the vacuum chamber of the projection optical system is relatively larger than the space on the sensitive substrate side from the opening. It is characterized by being high.
According to the present invention, since the degree of vacuum of the space in the vacuum chamber of the projection optical system is relatively higher than the space on the sensitive substrate side from the opening, it is possible to reduce the contamination of the reflecting mirror. .
A third invention for achieving the above object is the first invention or the second invention, wherein the opening has substantially the same shape as a luminous flux of ultrashort ultraviolet light passing through the opening. It is characterized by this.
It is preferable that the aperture be an aperture that is substantially the region through which EUV light necessary for exposure is transmitted (determined by the exposure area and the numerical aperture of the exposure light), and in this way, resist emission entering the vacuum chamber. It is possible to reduce gas more effectively.
A fourth invention for solving the above-mentioned problems is any one of the first to third inventions, wherein the air supply port and the exhaust port are disposed between the vacuum chamber and the sensitive substrate. It is characterized by being.
In the present means, since the air supply port and the exhaust port are disposed between the vacuum chamber and the sensitive substrate, the amount of gas released from the air intake port can be reduced.
A fifth invention for solving the above-mentioned problems is the fourth invention, wherein an opening that allows passage of ultrashort ultraviolet light necessary for exposure is provided between the purge gas flow passage and the vacuum chamber. A shielding plate is provided.
In the present invention, the place where the resist emission gas enters the chamber of the projection optical system is limited to the opening of the shielding plate. Therefore, this makes it possible to reduce the resist emission gas containing contaminants entering the chamber of the projection optical system, and the gas flow flowing from the air supply port toward the exhaust port flows over the opening. By doing so, the resist discharge gas can be sufficiently drawn into the gas flow, so that the flow of the gas flow flowing from the air supply port toward the exhaust port can be narrowed. Note that the opening is preferably as narrow as possible as long as the condition that the ultra-short ultraviolet light necessary for exposure can pass is satisfied.
A sixth invention for achieving the above object is the first invention, characterized in that the flow rate of the purge gas supplied from the supply port is supersonic.
In the present invention, even when the resist discharge gas is released at a high speed, most of it can be prevented from entering the chamber of the projection optical system.
A seventh invention for achieving the object is any one of the first to sixth inventions, characterized in that the pressure of the purge gas is set to 0.1 to 10 Pa. .
If the pressure of the purge gas is too low, the purge gas molecules do not collide with the resist discharge gas molecules, and the purge effect is lost. When the pressure of the purge gas is 0.1 Pa or more, the purge gas molecules collide with the resist discharge gas molecules at least once as an expected value while the resist discharge gas moves through a distance of about 10 mm, which is a normal purge space. Therefore, in the present invention, the lower limit value of the purge gas pressure is set to 0.1 Pa. On the other hand, if the pressure of the purge gas is too high, the purge gas may enter the chamber of the projection optical system and the degree of vacuum may decrease. When the pressure of the purge gas is 10 Pa or less, the purge gas flowing into the chamber can be sufficiently reduced. Therefore, in the present invention, the upper limit value of the purge gas pressure is set to 10 Pa.
An eighth invention for achieving the object is any one of the first to seventh inventions, wherein the directions of gas flow for purging the resist release gas are alternately reversed. In this case, the exposure is performed.
The resist discharge gas that has not been captured by the purge gas flow enters the projection optical system, but the penetration position is downstream of the purge gas due to the influence of the purge gas flow. Therefore, by switching the direction of the purge gas flow, the entry position of the resist emission gas into the projection optical system can be changed, and the reduction of the uneven reflectance of the projection optical system mirror can be mitigated. it can.
A ninth invention for achieving the object is any one of the first to eighth inventions, wherein the gas for purging the resist release gas is Ar, Kr, Xe, N 2 , He, Ne, or a mixture of two or more thereof.
As a purge gas, EUV light is not easily absorbed, photochemical reaction is not easily generated by EUV light or photoelectrons, and itself does not adhere to the optical element surface to form a carbon film, resulting in a large molecular mass. It is necessary that the resist discharge gas can be efficiently discharged. For this purpose, it is preferable to use these gases as purge gases.
A tenth invention for achieving the above object is the first invention, wherein the most sensitive substrate along the optical path of the ultrashort ultraviolet light among the plurality of reflecting mirrors in the projection optical system. In the exposure apparatus, the air supply port is disposed between a near reflecting mirror and the opening.
According to the present invention, among the resist emission gas 6 generated by EUV irradiation, the gas not directed to the optical system is shielded by the first shielding plate (the wall of the vacuum chamber), and only the resist emission gas that has passed through the first shielding plate. As described above, it is possible to reduce the adverse effect that the emitted gas that should not be directed to the projection optical system is directed to the projection optical system by flowing the purge gas as described above.
An eleventh invention for solving the above-mentioned problem is the tenth invention, wherein the shield has an opening through which the extreme ultraviolet light can pass between the air supply port and the reflecting mirror closest to the sensitive substrate. A board is arranged.
In the present invention, the action of the shielding plate can more effectively prevent the resist discharge gas and the purge gas from reaching the reflecting mirror closest to the sensitive substrate along the optical path.
A twelfth invention for solving the above-mentioned problems is the eleventh invention, wherein the space surrounded by the shielding plate and the wall of the vacuum chamber is a space closed except for the opening. It is what.
In this means, the space surrounded by the shielding plate and the wall of the vacuum chamber can be made substantially different from the space outside and the space formed by the vacuum chamber surrounding the projection optical system. The amount of purge gas leaking into the space surrounding the projection optical system can be reduced, and the degree of vacuum in this space can be easily controlled.
A thirteenth invention for solving the above-mentioned problems is the eleventh invention or the twelfth invention, characterized in that an exhaust port is provided between the shielding plate and the vacuum chamber.
By providing an exhaust port between the shielding plate and the vacuum chamber, it is possible to more effectively prevent the purge gas from entering the vacuum chamber.
A fourteenth invention for solving the above-mentioned problem is any one of the eleventh to thirteenth inventions, wherein at least one of the shielding plate and the vacuum chamber passes through the opening. The shape is substantially the same as the shape of the light beam of the ultra-short ultraviolet light.
It is preferable that the aperture be an aperture that is substantially the region through which EUV light necessary for exposure is transmitted (determined by the exposure area and the numerical aperture of the exposure light), and in this way, resist emission entering the vacuum chamber. It is possible to reduce gas more effectively.
A fifteenth aspect of the present invention for solving the above-mentioned problem is the tenth aspect of the present invention, wherein the vacuum in the space in the vacuum chamber of the projection optical system is relatively compared to the space closer to the sensitive substrate than the opening. It is characterized by a high degree.
According to the present invention, since the degree of vacuum of the space in the vacuum chamber of the projection optical system is relatively higher than the space on the sensitive substrate side from the opening, it is possible to reduce the contamination of the reflecting mirror. .
A sixteenth aspect of the present invention for solving the above-mentioned problems is the eleventh aspect of the present invention, wherein the reflecting mirror is relatively closer to the sensitive substrate side than the opening of the vacuum chamber than to the opening of the vacuum chamber. It is characterized in that the degree of vacuum in the side space is high.
According to the present invention, since the degree of vacuum in the space closer to the reflecting mirror can be increased, it is possible to reduce the contamination of the reflecting mirror constituting the projection optical system.
A seventeenth aspect of the present invention for solving the above-mentioned problems is the eleventh aspect of the present invention, wherein the reflector is relatively more open than the opening of the shielding plate relative to the space on the sensitive substrate side than the opening of the shielding plate. It is characterized in that the degree of vacuum in the side space is high.
In this means, the space closer to the reflecting mirror can be gradually increased to a high degree of vacuum, and contamination of the reflecting mirror can be reduced.
An eighteenth invention for achieving the above object is any one of the tenth to seventeenth inventions, wherein the purge gas supplied from the air supply port passes through the opening of the vacuum chamber and the sensitive substrate. The air supply port is arranged to be supplied in a direction.
According to the present invention, of the resist emission gas generated by the EUV irradiation, the gas going from the opening of the shielding plate to the projection optical system is pushed back by the purge gas supplied from the air supply port toward the wafer. Further, since the purge gas itself is supplied in the direction of the sensitive substrate (such as a wafer coated with a resist), it hardly enters the projection optical system.
A nineteenth aspect of the invention for achieving the object is the eighteenth aspect of the invention, wherein the exhaust port is disposed closer to the sensitive substrate than the opening of the vacuum chamber. .
Since the exhaust port is disposed in the vicinity of the flow of the purge gas on the sensitive substrate (wafer and resist) side, the gas released from the resist and the purge gas can be efficiently recovered.
A twentieth aspect of the invention for achieving the object is the eighteenth aspect or the nineteenth aspect of the invention, wherein the size of the opening for supplying the gas at the supply port is set so that the Reynolds number of the purge gas flow is 2000 or less. It is characterized by being determined to be
Since the Reynolds number of the purge gas flow is 2000 or less, the vibration of the projection optical system due to the vibration of the air supply port (nozzle) due to the turbulent flow can be suppressed. As a result, it is possible to suppress degradation of the imaging performance.
A twenty-first invention for achieving the object is any one of the eighteenth to twentieth inventions, wherein a direction in which a gas is supplied toward the sensitive substrate is 30 to 60 degrees with respect to the sensitive substrate. It is characterized by being.
At an actual working distance height (5 mm or more and 10 mm or less), the angle formed between the gas ejection direction from the nozzle and the wafer (sensitive substrate) surface is within a range of 30 to 60 ° in the projection optical system of the resist emission gas. The inflow rate is minimized. On the other hand, the inflow rate of the purge gas into the projection optical system monotonously decreases within this angle range.
A twenty-second invention for achieving the object is any one of the eighteenth to twenty-first inventions, wherein the flow rate of the gas supplied from the air supply port is 600 to 1000 cc / min (1.00 × 10 −5 to 1.67 × 10 −5 M 3 / sec).
The purge gas can have a flow rate of about 600 cc / min (sccm) or more and the inflow rate in the resist emission gas projection optical system can be 1% or less. Further, the purge gas can have a flow rate of about 1000 cc / min or less and the internal pressure of the purge gas projection optical system can be set to 0.4 Pa or less.
According to a twenty-third aspect of the invention for achieving the above object, the method includes the step of exposing and transferring a pattern formed on a mask to a sensitive substrate using the exposure apparatus of any one of the first to twenty-first aspects. This is a method for manufacturing a device having a fine pattern.
In the present invention, since deterioration of optical characteristics is suppressed or the exposure apparatus can be operated continuously for a long period of time, a device having a fine pattern can be manufactured with high throughput.

FIG. 1 is a diagram showing an outline of an EUV exposure apparatus according to the first embodiment of the present invention.
FIG. 2 is a diagram showing an outline of an EUV exposure apparatus according to the second embodiment of the present invention.
FIG. 3 is a view showing an outline of an EUV exposure apparatus according to the third embodiment of the present invention.
FIG. 4 is an enlarged view of the lower part of the projection optical system in FIG.
FIG. 5 is a diagram showing an outline of an EUV exposure apparatus according to the fourth embodiment of the present invention, which is a schematic diagram showing a configuration in the vicinity of the wafer, and shows a portion corresponding to FIG.
FIG. 6 is a diagram illustrating an example of an optimized nozzle shape.
FIG. 7 is a view showing the relationship between the projection optical system chamber 5 shown in FIGS.
FIG. 8 is a diagram showing a numerical analysis result of the relationship between the purge gas ejection angle, the inflow rate in the resist emission gas projection optical system, and the inflow rate in the purge gas projection optical system.
FIG. 9 is a diagram showing a configuration of an EUV exposure apparatus according to the fifth embodiment of the present invention, and corresponds to FIG.
FIG. 10 is a flowchart showing an example of the embodiment of the semiconductor device manufacturing method of the present invention.
FIG. 11 is a view showing an outline of a projection optical system of an exposure apparatus (EUV exposure apparatus) using EUV light.
FIG. 12 is a diagram showing the state of the gas released from the resist.

Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing an outline of an EUV exposure apparatus according to the first embodiment of the present invention. FIG. 1 is the same as the EUV exposure apparatus shown in FIG. 11, but shows only the part centered on the projection optical system. The EUV light from the light source is deflected by the plane reflecting mirror 1 and then forms an elongated arc-shaped illumination area on the mask M. Here, an aperture plate for forming an arcuate illumination region is not shown.
The light reflected on the surface of the mask M is then reflected in turn by the mirrors M1, M2, M3, M4, M5, and M6 of the projection optical system 2, and an image of the pattern formed on the surface of the mask M is converted into a wafer. 3 is formed on the resist 4 applied on the substrate 3.
The projection optical system mirrors M1 to M6 are housed in the projection optical system chamber 5, and the projection optical system chamber 5 is kept at a high degree of vacuum. As described with reference to FIG. 11, the outside of the projection optical system chamber 5 is also maintained at a high degree of vacuum, but the degree of vacuum in the projection optical system chamber 5 is set higher than the outside thereof. Note that the arrangement of the vacuum pump and the configuration of the vacuum chamber in FIG. 11 are merely examples, and other forms may be used. For example, in FIG. 11, the vacuum chamber 40 is a chamber surrounding the entire apparatus, but the reticle stage, the wafer stage, the illumination optical system, and the projection optical system are evacuated so that the vacuum evacuation is performed independently in separate vacuum chambers. It is also possible to arrange a pump. Even in this case, it is preferable that the projection optical system maintain the highest degree of vacuum. Openings 5a and 5b are provided at the EUV light incident position and the emission position in the projection optical system chamber 5, respectively.
The EUV light is irradiated onto the resist 4, and at this time, a large amount of resist discharge gas 6 is released from the resist 4.
In the present embodiment, as shown in FIG. 1, a working pipe (a space between the projection optical system chamber 5 and the wafer 3) has an air supply pipe 7, an air supply opening 8 at the tip thereof, and an exhaust pipe 9. And an exhaust port 10 at the tip thereof. A purge gas that does not cause a photochemical reaction with EUV light or photoelectrons is supplied from the air supply port 8 (organic matter that causes a reduction in mirror reflectivity = contaminant substances are reduced as much as possible), and most of the purge gas is supplied from the exhaust port 10. Discharged. Here, Ar is used as the gas species. Although the resist discharge gas 6 generated by the EUV irradiation moves upward, it is carried away so as to be entangled on this purge gas flow, so that almost all of the resist discharge gas 6 is put into the projection optical system chamber 5. No intrusion.
However, a large amount of purge gas may enter the projection optical system chamber 5. For this reason, it is desirable that the purge gas supplied from the air supply port 8 be ejected at a high speed. When the resist discharge gas 6 from the resist 4 is high speed, the purge gas may need to be supersonic in order to cope with it. By making the opening 5b as small as possible, it is possible to prevent a large amount of purge gas from entering the projection optical system. That is, it is most preferable that the size and shape of the opening 5b be limited to a region (determined by the exposure area and the numerical aperture of the exposure light) through which the EUV light that passes through the opening 5b and contributes to the imaging of the reticle pattern passes. If it is unnecessarily large, purge gas may flow into the projection optical system, leading to a reduction in the transmittance of exposure light. Specifically, it is preferably a partial ring-like shape that is the same as the exposure area having an outer peripheral length of 33 mm or less and a width of 4 mm or less. An example of the shape of the opening 5b will be described later. Thereby, the absorption of EUV light by the purge gas can be suppressed to a negligible level or less. In this manner, the size of the opening through which the resist discharge gas and the purge gas pass is set to the minimum size necessary for the exposure, as long as it is not particularly specified, in all the embodiments.
In the present embodiment, the air supply port 8 and the exhaust port 10 are provided at the lower part of the chamber of the projection optical system and directly above the wafer 3. However, if a necessary amount of purge gas is supplied and discharged, One or both of the air supply port 8 and the exhaust port 10 may be arranged at other positions. In other words, if the air supply port 8 and the exhaust port 10 are in the height direction between the projection optical system chamber 5 and the wafer 3, the horizontal direction is not necessarily below the portion where the chamber of the projection optical system is located, and the wafer. There is no need to be above 3. Therefore, the gas may be supplied from a space far from the upper part of the wafer stage and discharged away from the upper part of the wafer stage. Further, the purge gas discharge port may be exhausted by the vacuum pump 43 in common with the exhaust port for exhausting the internal gas in order to keep the inside of the chamber 40 in a high vacuum in FIG. This can be appropriately applied not only to this embodiment but also to other embodiments.
For the reasons described above, it is preferable to set the pressure in the working distance portion to 0.1 to 10 Pa or less. In particular, when the pressure of the working distance portion is about 1 Pa, the number of collisions between the resist discharge gas 6 and the purge gas in the working distance portion (height of about 10 mm) is 10 times or more, and the resist discharge gas 6 is high in the antigravity direction. Even if it is discharged, it is preferable because it is surely entangled in the purge gas and led to the exhaust port 10.
Further, the air supply port 8 and the exhaust port 10 are not provided separately, but both can be used as intake and exhaust ports, and one can be alternately used as an air supply port and the other as an exhaust port. By increasing the flow rate of the purge gas, the intrusion of the resist discharge gas 6 into the projection optical system can be reduced as much as possible, but it cannot be completely eliminated. Although the resist discharge gas 6 that has not been completely removed enters the projection optical system, a relatively large amount of the resist discharge gas 6 adheres to the downstream side of the purge gas flow of the mirror M6 due to the collision with the purge gas. If such a situation continues for a long time, the reflectivity of the mirror M6 decreases non-uniformly and the optical performance deteriorates. Therefore, by switching the direction of air supply and exhaust, it is possible to reduce non-uniformity in the reduction in mirror reflectivity and to reduce deterioration in non-uniformity in the pattern line width. This can be appropriately applied not only to this embodiment but also to other embodiments.
In the above embodiment, Ar is used as the purge gas. However, the purge gas is inert, does not cause a carbon film rather than an organic substance, has a large momentum (mass is large), EUV Other gases can be used as long as they satisfy the condition that the light absorption coefficient is small. For example, Kr, Xe, etc. can be used, and N 2 , Ne, etc. can be used besides these. Since N 2 has a low gas price, there is a merit that an increase in running cost can be reduced. A molecule with a large mass has a larger momentum, so that the resist emission gas can be efficiently removed. If it is too large, the speed of the thermal movement of the molecule is reduced (when the temperature is the same), and cancels out (resist Since the product of the blow-off effect and the number of collisions due to the collision between the released gas and the purge gas does not change significantly), a sufficient effect may not be obtained. Such preferred gas species are the same for all of the following embodiments.
In addition, the present invention is mainly for reducing the amount of contamination substances from the resist emission gas as much as possible to reduce the contamination gas from the resist as a contamination substance and adhere to the mirror surface as much as possible. It is not used. Similarly, it is possible to reduce the adhesion of contaminants generated from other members to the mirror surface. For example, it goes without saying that contaminants such as organic substances emitted from apparatus constituent members in the vicinity of the wafer stage can be similarly reduced from adhering to the mirror surface. This applies not only to the present embodiment but also to all other embodiments.
FIG. 2 is a diagram showing an outline of an EUV exposure apparatus according to the second embodiment of the present invention. The overall outline of this EUV exposure apparatus is the same as that shown in FIG. 11, and FIG. 2 shows an outline around the projection optical system. In the following drawings, the same components as those shown in the preceding figures in this column are assigned the same reference numerals and explanations thereof are omitted.
In this embodiment, a shielding plate 11 is installed below the projection optical system chamber 5 in addition to the configuration of the embodiment shown in FIG. This shielding plate 11 prevents most of the resist emission gas from entering the projection optical system. In this case as well, as described above, it is preferable to prevent a large amount of purge gas from entering the projection optical system by making the opening of the shielding plate 11 as small as possible.
FIG. 3 is a view showing an outline of an EUV exposure apparatus according to the third embodiment of the present invention, and FIG. 4 is an enlarged view of a lower portion of the projection optical system in FIG. The overall outline of this EUV exposure apparatus is the same as that shown in FIG. 11, and FIG. 3 shows an outline around the projection optical system.
In this embodiment, in addition to the configuration of the embodiment shown in FIG. 1, a shielding plate 12 is provided below the air supply pipe 7, the air supply port 8, the exhaust pipe 9, and the exhaust port 10. The difference is that an exhaust pipe 13 different from the exhaust pipe 9 and the exhaust port 10 and an exhaust port 14 connected thereto are provided in the lower part.
By disposing the shielding plate 12, the gas released from the resist 4 and indicated by the arrow in FIG. 4 that does not pass through the opening 12 a of the shielding plate 12 is shielded by the shielding plate 12 and exhausted through the exhaust port 14. Are discharged outside the system. The size of the opening 12a is set to be approximately the same as the shape of the light beam necessary for projection exposure. The shape of the effective light beam 17 is exemplarily shown by a broken line in FIG. By doing so, the gas traveling upstream (in the direction of the projection optical system) from the shielding plate 12 is limited to the range of the effective light flux 17.
The direction of the released gas indicated by the arrow that has passed through the shielding plate 12 is changed in the left direction by the purge gas 16 from the air supply port 8. Although Ar is used as the purge gas 16, other gases as described above can be used as appropriate. Further, the flow direction of the purge gas does not necessarily have to flow in the horizontal direction, and may be in other directions. For example, it is effective to flow in the obliquely downward direction. Further, the position, number, opening diameter, shape, and the like of the air supply port are determined so that vibration is not generated as much as possible in the apparatus and purge gas can be effectively flowed. This also applies to the embodiments shown in FIGS.
Part or most of the resist discharge gas 6 whose direction is changed by the purge gas 16 is shielded by the lower wall 5 c of the projection optical system chamber 5. By doing so, the problem that the emission gas that is not originally directed to the projection optical system by flowing the purge gas 16 is directed to the projection optical system is solved, and the resist emission gas 6 is more effectively applied to the mirror. Intrusion can be reduced.
If the emitted gas that has passed through the shielding plate 12 can be effectively shielded by the purge gas, the lower wall 5 c can be eliminated and the shielding plate 12 itself can be used as the lower wall of the vacuum chamber 5. However, the removal efficiency of emitted gas becomes higher when both the lower wall 5C and the shielding plate 12 are provided.
If the resist discharge gas 6 colliding with the shielding plate 12 floats in the vacuum apparatus, it may cause a problem because it absorbs the exposure light beam or causes contamination with other parts. Therefore, in the present embodiment, as described above, the exhaust port 14 and the exhaust pipe 13 are arranged below the shielding plate 12 so that the resist discharge gas 6 that has collided with the shielding plate 12 and floated is exhausted. Yes. Note that the number of exhaust ports is not necessarily one, and a large number may be arranged. For convenience of illustration, only one exhaust pump 15 is shown. However, it is preferable that each of the exhaust pipes 9 and 13 is connected to another exhaust pump and exhausts independently.
In the present embodiment, the left and right sides of the shielding plate 12 are connected to the projection optical system chamber 5 to create a separated space. That is, a space A in which the reflecting mirrors M1-M6 constituting the projection optical system are arranged, a space B surrounded by the lower wall 5c of the chamber and the shielding plate 12, and a space C between the shielding plate 12 and the wafer stage. It is. As a result, the degree of vacuum in the space B becomes higher than that in the space C, and further, the degree of vacuum in the space A can be made higher than that in the space B. By doing so, it is possible to more effectively reduce the contamination of the reflecting mirror constituting the projection optical system. However, it goes without saying that the shield plate 12 can be used as a simple shield plate, and the effect as a shield plate can be obtained without creating the separated space as described above.
In FIG. 3, a shielding plate 12 is provided under the lower surface of the projection optical system chamber 5, and a space formed therebetween (except for an opening for securing an optical path of EUV light is hermetically sealed. ) Is provided with an air supply port 8 and an exhaust port 10, and the portion corresponding to the shielding plate 12 (space A and B) in FIG. 3 is used as the projection optical system chamber 5, and hatched in FIG. 3. Even if a shielding plate is provided inside the projection optical system chamber 5 using the lower wall 5c as a shielding plate, the name is merely changed, the substantial configuration is the same, and the same operation and effect are obtained.
FIG. 5 is a diagram showing an outline of an EUV exposure apparatus according to the fourth embodiment of the present invention, which is a schematic diagram showing a configuration in the vicinity of the wafer, and shows a portion corresponding to FIG. The outline of this EUV exposure apparatus is the same as that shown in FIG.
In the present embodiment, the lower opening 5b of the projection optical system chamber 5 is set to an area through which EUV light necessary for exposure is transmitted (determined by the exposure area and the numerical aperture of the exposure light) and not larger than necessary. . This is to prevent the discharge gas and purge gas from flowing into the projection optical system as much as possible. Specifically, it is preferable to have a partial annular shape that is the same as the exposure area having an outer peripheral length of 33 mm or less and a width of 4 mm or less. This also applies to the above-described embodiment.
In the present embodiment, a nozzle-shaped air supply port 21 is provided inside the projection optical system chamber 5, and purge gas is blown out from the opening 22.
The direction in which the supply port 21 supplies the purge gas has a predetermined angle θ with respect to the surface of the sensitive substrate made of the wafer 3 and the resist 4. This angle will be described in detail later.
Further, in the present embodiment, an exhaust port 23 is provided in the vicinity of the flow of the purge gas between the lower portion of the projection optical system chamber 5 having a function of a shielding plate and the resist 4 and the wafer 3, thereby resist release gas. Since the purge gas is discharged more efficiently, the amount of penetration into the projection system can be reduced.
Since the opening 5b of the projection optical system chamber 5 has a partial annular (arc) shape as described above, it is necessary to devise the shape of the nozzle-shaped air supply port 21. FIG. 6 shows an example of the optimized nozzle shape. The opening 22 (purge gas ejection port) of the nozzle-shaped air supply port 21 preferably has an arc shape that follows the shape of the opening 5 b of the projection optical system chamber 5. This is because the purge gas can be prevented from flowing back into the projection optical system chamber 5 by matching the gas flow in the direction in which the opening width is shorter. It is preferable that the opening 5b of the projection optical system chamber 5 or the opening of the shielding plate provided as necessary has an arc shape as shown in FIG. 6 in the other embodiments.
Further, in order to increase the gas injection efficiency, the height d of the opening 22 of the nozzle-shaped air supply port 21 through which the purge gas is injected is set to about 0.5 mm, and the width of the opening 22 of the nozzle-shaped air supply port 21 is increased. Is approximately the same as or slightly smaller than the opening 5 b of the projection optical system chamber 5. By setting the nozzle opening height d to about 0.5 mm, it is possible to align the jetting direction of the purge gas and efficiently reduce the inflow of the resist discharge gas into the projection optical system. Further, assuming that the flow rate is 600 to 1000 cc / min as will be described later, the Reynolds number of the purge gas flow becomes 2000 or less, so that the vibration of the projection optical system due to the vibration of the nozzle due to the turbulent flow can be suppressed. As a result, it is possible to suppress degradation of the imaging performance.
FIG. 7 is a diagram showing the relationship between the projection optical system chamber 5 shown in FIGS. 5 and 6, the air supply port 21, the exhaust port 23, and the like. In order to prevent the optical elements from deteriorating in the projection optical system, the environment needs to be higher in vacuum, and the mirrors M1 to M6 constituting the projection optical system are arranged in the projection optical system chamber 5. In some cases, the planar reflecting mirror 1 and other optical elements may be disposed in the projection optical system chamber 5.
In the present embodiment, the lower opening 5b of the projection optical system chamber 5 serves as an opening of the shielding plate. Then, the purge gas introduced from the gas introduction machine 24 passes through the pipe 25 and is injected from the nozzle-like air supply port 21 as described above. Since the partition wall of the projection optical system chamber 5 is used as a shielding plate, it is possible to arrange the shielding plate and the nozzle without any problem even in a place where the working distance is small. Even when a shielding plate is separately provided on the lower side of the projection optical system chamber 5, it is preferable to increase the degree of vacuum above the lower side of the shielding plate. This is because it is possible to prevent contamination of the resist discharge gas and purge gas in the projection optical system.
The amount of resist discharge gas that enters the projection optical system is reduced by the purge gas ejected from the nozzle. However, if the amount of purge gas is too large, the purge gas pressure in the projection optical system becomes high, causing exposure light to be absorbed as described above, resulting in a decrease in throughput. Therefore, the inflow rate in the resist emission gas projection optical system, which is the ratio of the number of resist emission gas molecules flowing into the projection optical system to the total number of resist emission gas molecules, and the inflow into the projection optical system for all purge gas molecule numbers. It is necessary to reduce both the inflow rate in the purge gas projection optical system, which is the proportion of the number of purge gas molecules.
The flow rate of the purge gas will be described below. In the present embodiment, the purge gas can have a flow rate of about 600 cc / min (sccm) or more and the inflow rate in the resist emission gas projection optical system can be made 1% or less. On the other hand, it is also important to reduce the inflow rate in the purge gas projection optical system. In the case of a projection optical system using six reflecting mirrors which is considered to be the most realistic at present, the optical path length of the exposure light in the projection system is about 3600 mm. If this optical system can tolerate up to 5% of the purge gas in the projection optical system, the pressure of the purge gas flowing into the projection optical system is required to be 0.4 Pa or less. In the case of the configuration as in the present embodiment, the purge gas can be set at a flow rate of about 1000 cc / min or less and the internal pressure of the purge gas projection optical system can be set to 0.4 Pa or less.
In addition, the purge gas may cause a change in refractive index, which may cause a position measurement error in the Z direction of the wafer autofocus (in the optical axis direction of the projection optical system). However, in the region where the Ar flow rate is 600 to 1000 cc / min, it can be suppressed to a level that can be almost ignored, and there is no problem.
Next, the purge gas ejection angle will be described. The purge gas ejection angle is an angle formed by the gas ejection direction from the nozzle and the wafer (sensitive substrate) surface. FIG. 8 shows the numerical analysis results of the relationship between the purge gas ejection angle, the inflow rate in the resist emission gas projection optical system, and the inflow rate in the purge gas projection optical system. As shown in FIG. 8, at an actual working distance height (5 mm or more and 10 mm or less), the inflow rate of the resist emission gas (CO 2 ) into the projection optical system is minimized between 30 and 60 °. On the other hand, the inflow rate of the purge gas (Ar) into the projection optical system monotonously decreases within the range of the purge gas ejection angle. Therefore, the purge gas ejection angle is preferably 30 to 60 °, and more preferably 35 to 55 °.
As a result of the numerical analysis, since the gas flow reaches a steady state in about 0.1 seconds, there is no problem even if the purge gas flow is started just before the start of exposure.
FIG. 9 is a diagram showing a configuration of an EUV exposure apparatus according to the fifth embodiment of the present invention, and corresponds to FIG. The configuration of the fifth embodiment is different from that of the fourth embodiment in that a plurality of nozzle-like air supply ports 21 are provided around the opening 5b of the projection optical system chamber 5. The fifth embodiment is preferable because it is possible to reduce the amount of resist discharge gas and purge gas that enter the projection system. However, there is a disadvantage that the mechanism becomes more complicated.
If nozzles are installed over the entire surface around the opening 5b of the projection optical system chamber 5, it is possible to more efficiently reduce the amount of resist discharge gas and purge gas that enter the projection system.
Hereinafter, an example of an embodiment of a semiconductor device manufacturing method according to the present invention will be described. FIG. 10 is a flowchart showing an example of the embodiment of the semiconductor device manufacturing method of the present invention. The manufacturing process of this example includes the following processes.
(1) Wafer manufacturing process for manufacturing a wafer (or wafer preparation process for preparing a wafer)
(2) Mask manufacturing process for manufacturing a mask used for exposure (or mask preparation process for preparing a mask)
(3) Wafer processing step for performing necessary processing on the wafer (4) Chip assembly step for cutting out chips formed on the wafer one by one and making them operable (5) Chip inspection step for inspecting the completed chips Each process further includes several sub-processes. Among these main processes, the main process that has a decisive influence on the performance of the semiconductor device is the wafer processing process. In this step, designed circuit patterns are sequentially stacked on a wafer to form a large number of chips that operate as memories and MPUs. This wafer processing step includes the following steps.
(1) A thin film forming process for forming a dielectric thin film to be an insulating layer, a wiring portion, or a metal thin film for forming an electrode portion (using CVD or sputtering)
(2) Oxidation process for oxidizing the thin film layer and wafer substrate (3) Lithography process for forming a resist pattern using a mask (reticle) to selectively process the thin film layer and wafer substrate, etc. (4) Resist Etching process (for example, using dry etching technology) that processes thin film layers and substrates according to patterns
(5) Ion / impurity implantation / diffusion process (6) Resist stripping process (7) Inspection process for inspecting further processed wafers The wafer processing process is repeated as many times as necessary to produce semiconductor devices that operate as designed. To do.
In the present embodiment, the above-described EUV light exposure apparatus is used in the lithography process. Therefore, since the exposure apparatus can be operated continuously for a long time, a device having a fine pattern can be manufactured with high throughput. In addition, since the reflection characteristics of the optical elements constituting the projection optical system are less likely to change depending on the portion of the optical elements, it is possible to suppress the deterioration of the exposure performance.

Claims (23)

  1.   An exposure apparatus that exposes and transfers a pattern formed on a mask onto a sensitive substrate such as a wafer using extreme ultraviolet light, the projection optical system that projects the pattern formed on the mask onto the sensitive substrate, and A vacuum chamber that surrounds the projection optical system, an opening that is disposed in the vacuum chamber and allows the passage of extreme ultraviolet light toward the sensitive substrate, and a gas that purges the resist emission gas generated from the resist applied to the sensitive substrate are supplied. An extreme ultraviolet exposure apparatus, characterized in that an air supply port for venting and an exhaust port for exhausting the purge gas are provided.
  2.   2. The exposure apparatus according to claim 1, wherein the degree of vacuum of the space in the vacuum chamber of the projection optical system is relatively higher than the space on the sensitive substrate side from the opening. apparatus.
  3.   2. The exposure apparatus according to claim 1, wherein the opening has substantially the same shape as a luminous flux of ultrashort ultraviolet light passing through the opening.
  4.   2. The exposure apparatus according to claim 1, wherein the air supply port and the exhaust port are disposed between the vacuum chamber and the sensitive substrate.
  5.   5. The exposure apparatus according to claim 4, wherein a shielding plate having an opening through which ultrashort ultraviolet light necessary for exposure passes is provided between the purge gas flow passage and the vacuum chamber. An exposure apparatus characterized by that.
  6.   2. The exposure apparatus according to claim 1, wherein a flow rate of the purge gas supplied from the supply port is supersonic.
  7.   2. The exposure apparatus according to claim 1, wherein the pressure of the purge gas is 0.1 to 10 Pa.
  8.   2. The exposure apparatus according to claim 1, wherein the exposure is performed while alternately reversing the flow direction of the gas for purging the resist release gas.
  9. The exposure apparatus according to claim 1, wherein the gas for purging the resist release gas is Ar, Kr, Xe, N 2 , He, Ne, or a mixture of two or more thereof. An exposure apparatus comprising:
  10.   The exposure apparatus according to claim 1, wherein among the plurality of reflecting mirrors in the projection optical system, the reflecting mirror closest to the sensitive substrate along the optical path of the ultrashort ultraviolet light, and the opening An exposure apparatus in which the air supply port is disposed between the two.
  11.   11. The exposure apparatus according to claim 10, wherein a shielding plate having an opening through which the extreme ultraviolet light can pass is disposed between the air supply port and the reflecting mirror closest to the sensitive substrate. A featured exposure apparatus.
  12.   12. The exposure apparatus according to claim 11, wherein the space surrounded by the shielding plate and the wall of the vacuum chamber is a space closed except for the opening.
  13.   13. The exposure apparatus according to claim 12, further comprising an exhaust port between the shielding plate and the vacuum chamber.
  14.   11. The exposure apparatus according to claim 10, wherein at least one of the shielding plate and the vacuum chamber has substantially the same shape as a luminous flux of ultrashort ultraviolet light passing through the opening. An exposure apparatus characterized by that.
  15.   12. The exposure apparatus according to claim 11, wherein the degree of vacuum of the space closer to the reflector side than the opening of the vacuum chamber is relatively larger than the space closer to the sensitive substrate than the opening of the vacuum chamber. An exposure apparatus characterized by being expensive.
  16.   12. The exposure apparatus according to claim 11, wherein the degree of vacuum of the space closer to the reflector side than the opening of the vacuum chamber is relatively larger than the space closer to the sensitive substrate than the opening of the vacuum chamber. An exposure apparatus characterized by being expensive.
  17.   12. The exposure apparatus according to claim 11, wherein the degree of vacuum of the space closer to the reflector side than the opening of the shielding plate is relatively larger than the space closer to the sensitive substrate than the opening of the shielding plate. An exposure apparatus characterized by being expensive.
  18.   11. The exposure apparatus according to claim 10, wherein the air supply port is arranged such that a purge gas supplied from the air supply port is supplied to the sensitive substrate through an opening of the vacuum chamber. An exposure apparatus characterized by that.
  19.   19. The exposure apparatus according to claim 18, wherein the exhaust port is disposed closer to the sensitive substrate than the opening of the vacuum chamber.
  20.   19. The exposure apparatus according to claim 18, wherein the size of the opening for supplying the gas at the supply port is determined so that the Reynolds number of the purge gas flow is 2000 or less. apparatus.
  21.   19. The exposure apparatus according to claim 18, wherein a direction in which a gas is supplied toward the sensitive substrate is 30 to 60 degrees with respect to the sensitive substrate.
  22. 19. The exposure apparatus according to claim 18, wherein the flow rate of the gas supplied from the air supply port is 600 to 1000 cc / min (1.00 × 10 −5 to 1.67 × 10 −5 M 3 / sec). An exposure apparatus characterized by the above.
  23.   A method for producing a device having a fine pattern, comprising the step of exposing and transferring a pattern formed on a mask to a sensitive substrate using the exposure apparatus according to claim 1.
JP2006510548A 2004-02-27 2005-02-28 Exposure apparatus and method for manufacturing device having fine pattern Granted JPWO2005083759A1 (en)

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WO2008147175A1 (en) * 2007-05-25 2008-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7719661B2 (en) 2007-11-27 2010-05-18 Nikon Corporation Illumination optical apparatus, exposure apparatus, and method for producing device
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US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
US6459472B1 (en) * 1998-05-15 2002-10-01 Asml Netherlands B.V. Lithographic device
US6198792B1 (en) * 1998-11-06 2001-03-06 Euv Llc Wafer chamber having a gas curtain for extreme-UV lithography
JP2001057328A (en) * 1999-08-18 2001-02-27 Nikon Corp Reflection mask, exposure apparatus, and manufacture of integrated circuit
US6445439B1 (en) * 1999-12-27 2002-09-03 Svg Lithography Systems, Inc. EUV reticle thermal management
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