JPS649449A - Method and device for measuring photoresist characteristic - Google Patents
Method and device for measuring photoresist characteristicInfo
- Publication number
- JPS649449A JPS649449A JP16233987A JP16233987A JPS649449A JP S649449 A JPS649449 A JP S649449A JP 16233987 A JP16233987 A JP 16233987A JP 16233987 A JP16233987 A JP 16233987A JP S649449 A JPS649449 A JP S649449A
- Authority
- JP
- Japan
- Prior art keywords
- film
- soln
- resist
- light
- dropping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
PURPOSE:To reduce the time for measuring dissolution characteristic of resist by simplifying a jig for attaching a substrate coated with the resist. CONSTITUTION:A substrate 7 coated with a resist film 6 is placed on the upper surface near the center of a jig 8 provided with a light transmitting part, and a developing soln. is dropped on the film 6. The development of the film 6 is begun immediately after dropping the soln., and the film 6 is dissolved in the soln. and the film thickness becomes thinner slowly. On one hand, the film 6 is irradiated with laser light from a source 13 of the laser light simultaneously with the dropping of the soln. from the rear side of the substrate 7. The intensity of reflected light is sensed with a photodetector 9, thus dissolution characteristic of the resist in the developing soln. is measured. The development may be executed by dropping the soln. after exposing the film 6 to a desired degree of exposure by irradiating the film 6 by opening or closing a shutter 2 to control the light from the light source 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16233987A JPS649449A (en) | 1987-07-01 | 1987-07-01 | Method and device for measuring photoresist characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16233987A JPS649449A (en) | 1987-07-01 | 1987-07-01 | Method and device for measuring photoresist characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS649449A true JPS649449A (en) | 1989-01-12 |
| JPH0478981B2 JPH0478981B2 (en) | 1992-12-14 |
Family
ID=15752676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16233987A Granted JPS649449A (en) | 1987-07-01 | 1987-07-01 | Method and device for measuring photoresist characteristic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649449A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009271473A (en) * | 2008-05-12 | 2009-11-19 | Hoya Corp | Mask blank and method of manufacturing the same |
| JP2011029455A (en) * | 2009-07-27 | 2011-02-10 | Shibaura Mechatronics Corp | Apparatus and method for processing substrate |
| US20190162522A1 (en) | 2017-11-28 | 2019-05-30 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
| JP2019101038A (en) * | 2017-11-28 | 2019-06-24 | コー・ヤング・テクノロジー・インコーポレーテッド | Substrate inspection device and substrate inspection method |
| US10852125B2 (en) | 2017-11-28 | 2020-12-01 | Koh Young Technology Inc. | Apparatus for inspecting film on substrate by using optical interference and method thereof |
-
1987
- 1987-07-01 JP JP16233987A patent/JPS649449A/en active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009271473A (en) * | 2008-05-12 | 2009-11-19 | Hoya Corp | Mask blank and method of manufacturing the same |
| JP2011029455A (en) * | 2009-07-27 | 2011-02-10 | Shibaura Mechatronics Corp | Apparatus and method for processing substrate |
| US20190162522A1 (en) | 2017-11-28 | 2019-05-30 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
| JP2019101038A (en) * | 2017-11-28 | 2019-06-24 | コー・ヤング・テクノロジー・インコーポレーテッド | Substrate inspection device and substrate inspection method |
| JP2019101037A (en) * | 2017-11-28 | 2019-06-24 | コー・ヤング・テクノロジー・インコーポレーテッド | Substrate inspection device and substrate inspection method |
| JP2020173269A (en) * | 2017-11-28 | 2020-10-22 | コー・ヤング・テクノロジー・インコーポレーテッド | Substrate inspection device and substrate inspection method |
| US10852125B2 (en) | 2017-11-28 | 2020-12-01 | Koh Young Technology Inc. | Apparatus for inspecting film on substrate by using optical interference and method thereof |
| US10859371B2 (en) | 2017-11-28 | 2020-12-08 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
| US11543238B2 (en) | 2017-11-28 | 2023-01-03 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0478981B2 (en) | 1992-12-14 |
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