JPS6483590A - Growth of homogeneous crystal and equipment for carrying out process - Google Patents

Growth of homogeneous crystal and equipment for carrying out process

Info

Publication number
JPS6483590A
JPS6483590A JP63222187A JP22218788A JPS6483590A JP S6483590 A JPS6483590 A JP S6483590A JP 63222187 A JP63222187 A JP 63222187A JP 22218788 A JP22218788 A JP 22218788A JP S6483590 A JPS6483590 A JP S6483590A
Authority
JP
Japan
Prior art keywords
growth
carrying
equipment
out process
homogeneous crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63222187A
Other languages
English (en)
Other versions
JPH0569077B2 (ja
Inventor
Engeru Giyunta
Enko Arufuretsudo
Buee Kurenpuru Peetaa
Potsushiyu Ube
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AVL List GmbH
Original Assignee
AVL List GmbH
AVL Gesellschaft fuer Verbrennungskraftmaschinen und Messtechnik mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AVL List GmbH, AVL Gesellschaft fuer Verbrennungskraftmaschinen und Messtechnik mbH filed Critical AVL List GmbH
Publication of JPS6483590A publication Critical patent/JPS6483590A/ja
Publication of JPH0569077B2 publication Critical patent/JPH0569077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
JP63222187A 1987-09-04 1988-09-05 Growth of homogeneous crystal and equipment for carrying out process Granted JPS6483590A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0224287A AT395439B (de) 1987-09-04 1987-09-04 Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens

Publications (2)

Publication Number Publication Date
JPS6483590A true JPS6483590A (en) 1989-03-29
JPH0569077B2 JPH0569077B2 (ja) 1993-09-30

Family

ID=3530661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63222187A Granted JPS6483590A (en) 1987-09-04 1988-09-05 Growth of homogeneous crystal and equipment for carrying out process

Country Status (6)

Country Link
US (2) US4946545A (ja)
EP (1) EP0310591B1 (ja)
JP (1) JPS6483590A (ja)
CN (1) CN1031657A (ja)
AT (1) AT395439B (ja)
DE (1) DE3863887D1 (ja)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte
US5410984A (en) * 1993-03-01 1995-05-02 Bepex Corporation System for polymer crystallization
KR100293095B1 (ko) * 1996-02-29 2001-10-25 고지마 마타오 단결정향상방법과 단결정향상장치
US7528201B2 (en) * 2004-12-22 2009-05-05 Exxonmobil Chemical Patents Inc. Synthesis of silicoaluminophosphate molecular sieves
US8353640B2 (en) * 2008-01-22 2013-01-15 Brock Usa, Llc Load supporting panel having impact absorbing structure
EP2111491A2 (en) * 2007-01-19 2009-10-28 Brock International Base for turf system
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) * 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US20100147210A1 (en) * 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
CA2691554A1 (en) * 2010-02-01 2011-08-01 Michael Krautter Crystal growing device
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
CN102719878A (zh) * 2012-06-28 2012-10-10 江南大学 一种大晶体连续培养装置
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9650723B1 (en) 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
CN105568359B (zh) * 2016-01-27 2017-10-31 济南晶艺光电技术有限公司 水溶液晶体一体化生长炉
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
CN115104174A (zh) 2020-02-11 2022-09-23 Slt科技公司 改进的iii族氮化物衬底、制备方法和使用方法
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2459869A (en) * 1946-08-10 1949-01-25 Bell Telephone Labor Inc Crystal growing apparatus
GB654486A (en) * 1947-06-17 1951-06-20 Brush Dev Co Improvements in or relating to crystal growing means and method
US2647043A (en) * 1948-09-23 1953-07-28 Imber Oscar Crystal growing apparatus
US2651566A (en) * 1949-02-14 1953-09-08 Int Standard Electric Corp Methods and apparatus for growing crystals
US2863740A (en) * 1957-04-25 1958-12-09 Carl J Christensen Crystal growing system
US4300979A (en) * 1980-11-03 1981-11-17 Bell Telephone Laboratories, Incorporated Growth of AlPO4 crystals
US4382840A (en) * 1981-01-30 1983-05-10 Allied Corporation Hydrothermal crystal growing process and apparatus
US4481069A (en) * 1981-01-30 1984-11-06 Allied Corporation Hydrothermal crystal growing process
AT379831B (de) * 1982-03-30 1986-03-10 List Hans Verfahren zur herstellung von kristallen
FR2559166B1 (fr) * 1984-02-08 1986-06-13 Centre Nat Rech Scient Procede de croissance de cristaux d'arseniate d'aluminium

Also Published As

Publication number Publication date
JPH0569077B2 (ja) 1993-09-30
CN1031657A (zh) 1989-03-15
ATA224287A (de) 1992-05-15
DE3863887D1 (de) 1991-08-29
US5098673A (en) 1992-03-24
EP0310591A1 (de) 1989-04-05
EP0310591B1 (de) 1991-07-24
US4946545A (en) 1990-08-07
AT395439B (de) 1992-12-28

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees