JPS6461977A - Light beam generator - Google Patents
Light beam generatorInfo
- Publication number
- JPS6461977A JPS6461977A JP62220633A JP22063387A JPS6461977A JP S6461977 A JPS6461977 A JP S6461977A JP 62220633 A JP62220633 A JP 62220633A JP 22063387 A JP22063387 A JP 22063387A JP S6461977 A JPS6461977 A JP S6461977A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light
- semiconductor substrate
- emitted
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To allow a light beam to converge by turning it back in the direction perpendicular to the surface of a semiconductor substrate and to make it possible to deflect a wire width when compared with the displacement of the light beam emitted position on the end face of light beam emission of a semiconductor laser by a method wherein a semiconductor laser, which can be changed continuously by controlling the beam west position of the emitted light from outside, and a spherical mirror with which the emitted light of the semiconductor laser will be reflected in the prescribed direction, are provided on a semiconductor substrate. CONSTITUTION:A semiconductor substrate 1, a semiconductor laser 2 with which the beam west position of the emitted light formed on the semiconductor substrate 1 can be changed continuously by the control from outside, and the spherical mirror 3, which reflects the light emitted from the semiconductor laser 2 formed on the semiconductor substrate 1 in the direction vertical to the surface of the semiconductor substrate 1, are provided on the title optical beam generator. The position of the emitted light can be continuously changed in the amount of 10mum or thereabout by controlling the current applied to a deflection part. Also, when the spherical mirror 3 is formed into a concaved type, the degree of change of the beam west position on the beam emission end face of the semiconductor laser 2 can be increased as shown by light beams a-c. As a result, the beam west of the semiconductor laser 2 can be modulated by 10mum, and the light beam can also be deflected in the width of 100mum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220633A JPS6461977A (en) | 1987-09-02 | 1987-09-02 | Light beam generator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62220633A JPS6461977A (en) | 1987-09-02 | 1987-09-02 | Light beam generator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461977A true JPS6461977A (en) | 1989-03-08 |
Family
ID=16754029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62220633A Pending JPS6461977A (en) | 1987-09-02 | 1987-09-02 | Light beam generator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461977A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6079791A (en) * | 1983-10-06 | 1985-05-07 | Nec Corp | Semiconductor laser |
JPS61231786A (en) * | 1985-04-08 | 1986-10-16 | Seiko Epson Corp | Two dimensional beam scanning type semiconductor laser |
-
1987
- 1987-09-02 JP JP62220633A patent/JPS6461977A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6079791A (en) * | 1983-10-06 | 1985-05-07 | Nec Corp | Semiconductor laser |
JPS61231786A (en) * | 1985-04-08 | 1986-10-16 | Seiko Epson Corp | Two dimensional beam scanning type semiconductor laser |
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