JPS6448487A - Laser diode - Google Patents

Laser diode

Info

Publication number
JPS6448487A
JPS6448487A JP62206153A JP20615387A JPS6448487A JP S6448487 A JPS6448487 A JP S6448487A JP 62206153 A JP62206153 A JP 62206153A JP 20615387 A JP20615387 A JP 20615387A JP S6448487 A JPS6448487 A JP S6448487A
Authority
JP
Japan
Prior art keywords
laser
mutually different
laser diode
radiated
intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62206153A
Other languages
Japanese (ja)
Inventor
Tsurayuki Kawatoko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62206153A priority Critical patent/JPS6448487A/en
Publication of JPS6448487A publication Critical patent/JPS6448487A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable averaging of intensity of laser light with each wave length which is radiated from required laser luminous surface by laying out on all- surface reflection film on the side which is opposite to the required laser luminous surface of laser diode. CONSTITUTION:A totally reflecting film M laid out on the surface which is opposite to the required laser emission surface of laser diode reflects the laser light with mutually different wavelengths which is generated according to mutually different pitches of a plurality of diffraction gratings G1-G3 which were laid out along the axial direction of an active layer 3 and compensates for the difference of light loss being based on the difference of layout position in the active layer 3 of diffraction gratings G1-G3. It allows the intensity of laser light with mutually different wavelength which are radiated from the required laser emission surface to be averaged.
JP62206153A 1987-08-18 1987-08-18 Laser diode Pending JPS6448487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206153A JPS6448487A (en) 1987-08-18 1987-08-18 Laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206153A JPS6448487A (en) 1987-08-18 1987-08-18 Laser diode

Publications (1)

Publication Number Publication Date
JPS6448487A true JPS6448487A (en) 1989-02-22

Family

ID=16518674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206153A Pending JPS6448487A (en) 1987-08-18 1987-08-18 Laser diode

Country Status (1)

Country Link
JP (1) JPS6448487A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1304779A2 (en) * 2001-10-12 2003-04-23 Samsung Electronics Co., Ltd. Distributed feedback semiconductor laser
US8477819B2 (en) 2009-12-03 2013-07-02 Renesas Electronics Corporation Semiconductor laser diode device and method of fabrication thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1304779A2 (en) * 2001-10-12 2003-04-23 Samsung Electronics Co., Ltd. Distributed feedback semiconductor laser
US8477819B2 (en) 2009-12-03 2013-07-02 Renesas Electronics Corporation Semiconductor laser diode device and method of fabrication thereof

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