JPS6447076U - - Google Patents
Info
- Publication number
- JPS6447076U JPS6447076U JP13998987U JP13998987U JPS6447076U JP S6447076 U JPS6447076 U JP S6447076U JP 13998987 U JP13998987 U JP 13998987U JP 13998987 U JP13998987 U JP 13998987U JP S6447076 U JPS6447076 U JP S6447076U
- Authority
- JP
- Japan
- Prior art keywords
- conductive foil
- connector
- pattern
- circuit board
- printed circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011888 foil Substances 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 1
Landscapes
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13998987U JPS6447076U (da) | 1987-09-16 | 1987-09-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13998987U JPS6447076U (da) | 1987-09-16 | 1987-09-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6447076U true JPS6447076U (da) | 1989-03-23 |
Family
ID=31403751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13998987U Pending JPS6447076U (da) | 1987-09-16 | 1987-09-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6447076U (da) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7507615B2 (en) | 1990-11-09 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
US7547915B2 (en) | 1994-06-09 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having SiOxNy film |
US7855106B2 (en) | 1991-08-26 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5524856U (da) * | 1978-08-02 | 1980-02-18 |
-
1987
- 1987-09-16 JP JP13998987U patent/JPS6447076U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5524856U (da) * | 1978-08-02 | 1980-02-18 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7507615B2 (en) | 1990-11-09 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
US7855106B2 (en) | 1991-08-26 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US7547915B2 (en) | 1994-06-09 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having SiOxNy film |
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