JPS6447030A - Plasma etching device - Google Patents

Abstract

PURPOSE:To reduce undercuts and to improve a processing precision by a method wherein reactive gases are respectively introduced into a plasma producing chamber for generating plasma by an electron cyclotron resonance excitation and a sample chamber. CONSTITUTION:The interiors of a plasma producing chamber 1 and an etching chamber 3 are respectively set at a necessary degree of vacuum and thereafter, gases for etching are respectively supplied in the chambers 1 and 3 through gas supply pipes 1g and 3g and with a DC made to flow through exciting coils 4, a microwave is introduced in the chamber 1. The microwave introduced in the chamber 1 is brought into a resonant state in the chamber 1, the reactive gases are decomposed and resonance-excited and plasma is produced. The produced plasma is irradiated on a sample S on a sample stand 5 as an ion beam having a directional property along a divergent magnetic field, which is formed by the coils 4, and parts alone irradiated with the ion beam of the inert gas on the surface of the sample S are excited.