JPS6441128U - - Google Patents

Info

Publication number
JPS6441128U
JPS6441128U JP13555387U JP13555387U JPS6441128U JP S6441128 U JPS6441128 U JP S6441128U JP 13555387 U JP13555387 U JP 13555387U JP 13555387 U JP13555387 U JP 13555387U JP S6441128 U JPS6441128 U JP S6441128U
Authority
JP
Japan
Prior art keywords
pipe
raw material
vacuum
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13555387U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0627944Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987135553U priority Critical patent/JPH0627944Y2/ja
Publication of JPS6441128U publication Critical patent/JPS6441128U/ja
Application granted granted Critical
Publication of JPH0627944Y2 publication Critical patent/JPH0627944Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP1987135553U 1987-09-07 1987-09-07 気相成長装置 Expired - Lifetime JPH0627944Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987135553U JPH0627944Y2 (ja) 1987-09-07 1987-09-07 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987135553U JPH0627944Y2 (ja) 1987-09-07 1987-09-07 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6441128U true JPS6441128U (US06265458-20010724-C00056.png) 1989-03-13
JPH0627944Y2 JPH0627944Y2 (ja) 1994-07-27

Family

ID=31395282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987135553U Expired - Lifetime JPH0627944Y2 (ja) 1987-09-07 1987-09-07 気相成長装置

Country Status (1)

Country Link
JP (1) JPH0627944Y2 (US06265458-20010724-C00056.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244120A (ja) * 1993-02-19 1994-09-02 Sony Corp ウエハ処理装置におけるガス供給装置
JPH101776A (ja) * 1996-06-10 1998-01-06 Canon Inc 半導体を作製する装置のガス供給方法および供給装置
JP2018006682A (ja) * 2016-07-07 2018-01-11 昭和電工株式会社 ガス配管システム、化学気相成長装置、成膜方法及びSiCエピタキシャルウェハの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748850A (en) * 1980-09-08 1982-03-20 Fujitsu Ltd Carrier reproducing circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748850A (en) * 1980-09-08 1982-03-20 Fujitsu Ltd Carrier reproducing circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244120A (ja) * 1993-02-19 1994-09-02 Sony Corp ウエハ処理装置におけるガス供給装置
JPH101776A (ja) * 1996-06-10 1998-01-06 Canon Inc 半導体を作製する装置のガス供給方法および供給装置
JP2018006682A (ja) * 2016-07-07 2018-01-11 昭和電工株式会社 ガス配管システム、化学気相成長装置、成膜方法及びSiCエピタキシャルウェハの製造方法
WO2018008334A1 (ja) * 2016-07-07 2018-01-11 昭和電工株式会社 ガス配管システム、化学気相成長装置、成膜方法及びSiCエピタキシャルウェハの製造方法

Also Published As

Publication number Publication date
JPH0627944Y2 (ja) 1994-07-27

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