JPS64385B2 - - Google Patents
Info
- Publication number
- JPS64385B2 JPS64385B2 JP12906981A JP12906981A JPS64385B2 JP S64385 B2 JPS64385 B2 JP S64385B2 JP 12906981 A JP12906981 A JP 12906981A JP 12906981 A JP12906981 A JP 12906981A JP S64385 B2 JPS64385 B2 JP S64385B2
- Authority
- JP
- Japan
- Prior art keywords
- trans
- liquid crystal
- biphenyl
- cyclohexyl
- propylcyclohexyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 32
- 239000004305 biphenyl Substances 0.000 claims description 16
- 235000010290 biphenyl Nutrition 0.000 claims description 16
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 27
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004988 Nematic liquid crystal Substances 0.000 description 3
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 3
- 229910000564 Raney nickel Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 description 3
- 229910000343 potassium bisulfate Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- PKJBWOWQJHHAHG-UHFFFAOYSA-N 1-bromo-4-phenylbenzene Chemical group C1=CC(Br)=CC=C1C1=CC=CC=C1 PKJBWOWQJHHAHG-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FALLTGVTJOEUFL-CTYIDZIISA-N C1C[C@@H](CCC)CC[C@@H]1C1CCCCC1 Chemical compound C1C[C@@H](CCC)CC[C@@H]1C1CCCCC1 FALLTGVTJOEUFL-CTYIDZIISA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- UOBQDYFTAJKQAL-UHFFFAOYSA-N 2-cyclohexylcyclohexan-1-one Chemical compound O=C1CCCCC1C1CCCCC1 UOBQDYFTAJKQAL-UHFFFAOYSA-N 0.000 description 1
- CANCZANBFBDGQT-UHFFFAOYSA-N 3-cyclohexylcyclohexan-1-one Chemical compound C1C(=O)CCCC1C1CCCCC1 CANCZANBFBDGQT-UHFFFAOYSA-N 0.000 description 1
- OZLFNAZSDVXEFU-UHFFFAOYSA-N 4-(4-pentylcyclohexyl)cyclohexan-1-one Chemical compound C1CC(CCCCC)CCC1C1CCC(=O)CC1 OZLFNAZSDVXEFU-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- XXUSEPRYHRDKFV-CTYIDZIISA-N C1C[C@@H](CCC)CC[C@@H]1C1=CC=C(C#N)C=C1 Chemical compound C1C[C@@H](CCC)CC[C@@H]1C1=CC=C(C#N)C=C1 XXUSEPRYHRDKFV-CTYIDZIISA-N 0.000 description 1
- FURZYCFZFBYJBT-JCNLHEQBSA-N C1C[C@@H](CCCCC)CC[C@@H]1C1=CC=C(C#N)C=C1 Chemical compound C1C[C@@H](CCCCC)CC[C@@H]1C1=CC=C(C#N)C=C1 FURZYCFZFBYJBT-JCNLHEQBSA-N 0.000 description 1
- NSGMZTNTQKRAFA-UAPYVXQJSA-N C1C[C@@H](CCCCCCC)CC[C@@H]1C1=CC=C(C#N)C=C1 Chemical compound C1C[C@@H](CCCCCCC)CC[C@@H]1C1=CC=C(C#N)C=C1 NSGMZTNTQKRAFA-UAPYVXQJSA-N 0.000 description 1
- 239000007868 Raney catalyst Substances 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- WETWJCDKMRHUPV-UHFFFAOYSA-N acetyl chloride Chemical compound CC(Cl)=O WETWJCDKMRHUPV-UHFFFAOYSA-N 0.000 description 1
- 239000012346 acetyl chloride Substances 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000010531 catalytic reduction reaction Methods 0.000 description 1
- 238000007333 cyanation reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000005911 haloform reaction Methods 0.000 description 1
- 230000002140 halogenating effect Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- JWQLJPBJNSPKSG-UHFFFAOYSA-M magnesium;phenylbenzene;bromide Chemical compound [Mg+2].[Br-].C1=CC=CC=C1C1=CC=[C-]C=C1 JWQLJPBJNSPKSG-UHFFFAOYSA-M 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- CRWJEUDFKNYSBX-UHFFFAOYSA-N sodium;hypobromite Chemical compound [Na+].Br[O-] CRWJEUDFKNYSBX-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
Description
本発明は正の誘電異方性を示す新規な液晶物質
に関する。
液晶表示素子は液晶物質が有する光学異方性及
び誘電異方性を利用したものであるが、その表示
方式にはTN型、DS型、ゲスト・ホスト型、
DAP型、ホワイト・テイラー型など各種の方式
があり、それぞれの方式により使用される液晶物
質に要求される性質も異る。例えば表示素子の種
類によつて、液晶物質として誘電異方性Δεが正
のものを必要としたり、負のものを必要とした
り、或はその中間的な値のものが適したりする。
しかしいずれにしても使用される液晶物質はでき
るだけ広い温度範囲で液晶相を示し、又水分、
熱、空気、光などに対して安定である必要があ
る。現在のところ単一化合物でこの様な条件をす
べて満たすものはなく、数種の液晶化合物や非液
晶化合物を混合して一応実用に耐えるものを得て
いるのが現状である。
近年広い温度範囲、すなわち低温から高温で動
作する液晶表示素子が要求されている。この要求
を満たすものとして広い温度範囲で液晶相を示
し、かつ低粘性なものが必要とされている。
本発明はこのような要求を満すものである。即
ち一般式
(上式中Rは水素又は炭素数1〜6のアルキル
基を示す)
で表わされる4―シアノ―4′―〔トランス―4″―
(トランス―4―アルキルシクロヘキシル)シ
クロヘキシル〕ビフエニルである。
本発明の化合物は、例えばその一つである4―
シアノ―4′〔トランス―4″―(トランス―4―
プロピルシクロヘキシル)シクロヘキシル〕ビフ
エニルは結晶―スメクチツク(C―Sm)点109.0
℃、スメクチツク―ネマチツク(Sm―N)点
155.9℃、ネマチツク透明(N―I)点380℃(外
挿値)という様に広い温度範囲で液晶相を示し、
誘電異方性値は+7程度、粘度は20℃で80cp(外
挿値)程度で水分、空気、光などに対して安定で
あり、少量の添加で温度範囲の広い低粘性なネマ
チツク液晶組成物をつくるのに有用な物質であ
る。
つぎに本発明の化合物の製造法について述べ
る。まず、4―ブロモビフエニルと金属マグネシ
ウムから4―ビフエニルマグネシウムブロミドと
し、それを4―(トランス―4′―アルキルシクロ
ヘキシル)シクロヘキサノンと反応して4―〔4
(トランス―4―アルキルシクロヘキシル)
シクロヘキサン―1″―オール〕ビフエニル()
とする。次にこれを硫酸水素カリウムを触媒にし
て脱水して4―〔4″―(トランス―4―アルキ
ルシクロヘキシル)シクロヘキセン―1″―イル〕
ビフエニル()を得、ついでラネーニツケル触
媒を用いて水素添加して4―〔トランス―4″―
(トランス―4―アルキルシクロヘキシル)シ
クロヘキシル〕ビフエニル()を得る。このも
のは()を直接、ラネーニツケルを使用して水
素添加しても得ることができる。次に化合物
()をヨウ素酸又は過ヨウ素酸などでハワゲン
化することにより4―ヨード―4′―〔トランス―
4″―(トランス―4―アルキルシクロヘキシ
ル)シクロヘキシル〕ビフエニル()とし、こ
れをシアン化第一銅でシアノ化すれば、目的の4
―シアノ―4′―〔トランス―4″―(トランス―4
―アルキルシクロヘキシル)シクロヘキシル〕
ビフエニル()が得られる。
以上を化学式で示すと
()式の化合物は工程数は多くなるが上記の
()の化合物から以下の様なルートによつて製
造することも出来る。即ち()の化合物を塩化
アセチル又は無水酢酸と、無水塩化アルミニウム
存在下で反応させて4―アセチル―4′―〔トラン
ス―4″―(トランス―4―アルキルシクロヘキ
シル)シクロヘキシル〕ビフエニル()とし、
ついで次亜臭素酸ナトリウム又は次亜塩素酸ナト
リウムでハロホルム反応を行つてアセチル基をカ
ルボキシル基にしてカルボン酸()とし、更に
塩化チオニルで酸塩化物()としてからアンモ
ニアによる酸アミド()を経て塩化チオニルな
どによる脱水により()を得る。化学式で示す
と、
以下、実施例により本発明の化合物につき更に
詳細に説明する。
実施例 1
〔4―シアノ―4′―〔トランス―4″―(トラン
ス―4―プロピルシクロヘキシル)シクロヘ
キシル〕ビフエニル(()式でR=C3H5のも
の)の製造〕
削り状マグネシウム3.6g(0.148モル)を3つ
口フラスコに入れ4―ブロモビフエニル34.5g
(0.148モル)をテトラヒドロフラン100mlに溶か
した液をN2気流中で反応温度30〜35℃に保ち撹
拌しながら、ゆつくり滴下していく。3時間後反
応は終了しマグネシウムは溶けて均一になり4―
ビフエニルマグネシウムブロミドを生じる。これ
に4―(トランス―4′―プロピルシクロヘキシ
ル)シクロヘキサン26.2g(0.118モル)をテト
ラヒドロフラン50mlに溶かした液を反応温度を10
℃以下に保ちつつ速かに滴下する。滴下後35℃ま
で昇温させ30分間撹拌し、ついで3N―塩酸100ml
を加える。反応液を分液ロートに移し、n―ヘプ
タン(100ml×3)で抽出後、合わせたn―ヘプ
タン層を水で洗液が中性になるまで水洗してから
溶媒を減圧留去する。残留物は4―〔4″―(トラ
ンス―4―プロピルシクロヘキシル)シクロヘ
キサン―1″―オール〕ビフエニルであり、これに
硫酸水素カリウム15gを加えN2気流中170℃で2
時間、脱水する。冷却後300mlのn―ヘプタンを
加え、硫酸水素カリウムを別し、分液ロート上
でn―ヘプタン層を洗液が中性になるまで水洗
し、溶媒を減圧留去し、n―ヘプタンとアセトン
で再結晶し得られるのが4―〔4″―(トランス―
4―プロピルシクロヘキシル)シクロヘキセン
―1″―イル〕ビフエニルである。このものの5.4
g(0.0150モル)をエタノール300mlに溶解し、
ラネーニツケル触媒2.2gを加え、オートクレー
ブ中、50℃、5Kg/cm2の水素圧をかけ接触還元を
行なう。ガスクロマトグラフイーで追跡し、原料
が消失した時点即ち5時間後に還元反応を終了さ
せた。このときの水素吸収量は410mlであつた。
触媒を別してから溶媒を減圧留去し、残留物を
n―ヘプタンで再結晶し、4―〔トランス―4″―
(トランス―4―プロピルシクロヘキシル)シ
クロヘキシル〕ビフエニルを得る。このものの
2.5g(0.0069モル)を酢酸200mlに溶かし、純水
1.3ml、濃硫酸1.4ml、ヨウ素酸0.28g、ヨウ素
0.71g、四塩化炭素0.6mlの混合物を80℃で10時
間還流した。反応液を冷却し析出した結晶を過
し、この結晶をn―ヘプタンで再結晶し得られた
ものが4―ヨード―4′―〔トランス―4″―(トラ
ンス―4―プロピルシクロヘキシル)シクロヘ
キシル〕ビフエニルである。このものの2.1g
(0.0043モル)をN,N―ジメチルホルムアミド
100mlに溶解し、シアン化第一銅0.77gを加え、
130℃で5時間還流した。冷却後、n―ヘプタン
100mlに30%アンモニア水100mlを加え分液し、次
いで水洗い、6N―塩酸洗いを施こし、更に洗液
が中性になるまで水洗する。溶媒を減圧留去し、
n―ヘプタンで再結晶し、得られたものが4―シ
アノ―4′―〔トランス―4″―(トランス―4―
プロピルシクロヘキシル)シクロヘキシル〕ビフ
エニルである。収量0.7g、収率はシアノ化反応
につき42%、C―Sm点109.0℃、Sm―N点155.9
℃、N―I点380℃(外挿値)であつた。
実施例 2,3
実施例1に於ける4―(トランス―4′―プロピ
ルシクロヘキシル)シクロヘキサンの代りにシク
ロヘキシルシクロヘキサノン及び4―(トランス
―4′―ペンチルシクロヘキシル)シクロヘキサノ
ンを使用し、同様にして第1表の実施例2,3の
欄に示す()式の化合物を得た。それ等の収量
物性等を実施例1の結果と共に第1表に示す。
The present invention relates to novel liquid crystal materials exhibiting positive dielectric anisotropy. Liquid crystal display elements utilize the optical anisotropy and dielectric anisotropy of liquid crystal materials, and their display methods include TN type, DS type, guest-host type,
There are various types such as DAP type and White-Taylor type, and each type requires different properties of the liquid crystal material used. For example, depending on the type of display element, a liquid crystal material with a positive dielectric anisotropy Δε may be required, a material with a negative dielectric anisotropy may be required, or a material with an intermediate value may be suitable.
However, in any case, the liquid crystal materials used exhibit a liquid crystal phase over a wide temperature range, and also contain moisture and
It must be stable against heat, air, light, etc. At present, there is no single compound that satisfies all of these conditions, and the current state of affairs is to mix several types of liquid crystal compounds and non-liquid crystal compounds to obtain compounds that can withstand practical use. In recent years, there has been a demand for liquid crystal display elements that operate over a wide temperature range, ie, from low temperatures to high temperatures. In order to meet this requirement, there is a need for a material that exhibits a liquid crystal phase over a wide temperature range and has low viscosity. The present invention satisfies these requirements. That is, the general formula (In the above formula, R represents hydrogen or an alkyl group having 1 to 6 carbon atoms) 4-cyano-4′-[trans-4″-
(trans-4-alkylcyclohexyl)cyclohexyl]biphenyl. The compound of the present invention is, for example, one of the 4-
Cyano-4′ [Trans-4″-(Trans-4-
Propylcyclohexyl) cyclohexyl]biphenyl has a crystal-smectic (C-Sm) point of 109.0
°C, smektik-nemachik (Sm-N) point
It exhibits a liquid crystal phase over a wide temperature range, such as 155.9℃ and a nematic transparent (N-I) point of 380℃ (extrapolated value).
A low-viscosity nematic liquid crystal composition with a dielectric anisotropy value of about +7 and a viscosity of about 80 cp (extrapolated value) at 20°C, stable against moisture, air, light, etc., and can be used in a wide temperature range with a small amount of addition. It is a substance useful for making. Next, a method for producing the compound of the present invention will be described. First, 4-biphenylmagnesium bromide is produced from 4-bromobiphenyl and metallic magnesium, and this is reacted with 4-(trans-4'-alkylcyclohexyl)cyclohexanone to produce 4-[4
(trans-4-alkylcyclohexyl)
Cyclohexane-1″-ol]biphenyl ()
shall be. Next, this was dehydrated using potassium hydrogen sulfate as a catalyst to obtain 4-[4″-(trans-4-alkylcyclohexyl)cyclohexene-1″-yl].
Biphenyl () was then hydrogenated using a Raney-nickel catalyst to obtain 4-[trans-4″-
(trans-4-alkylcyclohexyl)cyclohexyl]biphenyl () is obtained. It can also be obtained by directly hydrogenating () using Raney nickel. Next, by halogenating the compound () with iodic acid or periodic acid, 4-iodo-4'-[trans-
4″-(trans-4-alkylcyclohexyl)cyclohexyl]biphenyl (), and cyanating it with cuprous cyanide produces the desired 4
-Cyano-4′-[Trans-4″-(Trans-4
-alkylcyclohexyl)cyclohexyl]
Biphenyl () is obtained. If the above is expressed as a chemical formula, The compound of the formula () can also be produced from the compound of the above () by the following route, although the number of steps is increased. That is, the compound () is reacted with acetyl chloride or acetic anhydride in the presence of anhydrous aluminum chloride to obtain 4-acetyl-4'-[trans-4''-(trans-4-alkylcyclohexyl)cyclohexyl]biphenyl (),
Next, a haloform reaction is carried out with sodium hypobromite or sodium hypochlorite to convert the acetyl group into a carboxyl group to form a carboxylic acid (), which is then converted into an acid chloride () with thionyl chloride, and then converted into an acid amide () with ammonia. Dehydration with thionyl chloride etc. gives (). Shown as a chemical formula, Hereinafter, the compounds of the present invention will be explained in more detail with reference to Examples. Example 1 [Manufacture of 4-cyano-4′-[trans-4″-(trans-4-propylcyclohexyl)cyclohexyl]biphenyl (with the formula () where R=C 3 H 5 )] Magnesium shavings 3.6 g (0.148 mol) in a three-necked flask and 34.5 g of 4-bromobiphenyl
(0.148 mol) dissolved in 100 ml of tetrahydrofuran is slowly added dropwise while stirring while maintaining the reaction temperature at 30-35°C in a N 2 stream. After 3 hours, the reaction ended and the magnesium dissolved and became homogeneous 4-
This produces biphenylmagnesium bromide. To this, a solution of 26.2 g (0.118 mol) of 4-(trans-4'-propylcyclohexyl)cyclohexane dissolved in 50 ml of tetrahydrofuran was added at a reaction temperature of 10
Drop quickly while keeping the temperature below ℃. After dropping, the temperature was raised to 35℃, stirred for 30 minutes, and then 100ml of 3N hydrochloric acid was added.
Add. The reaction solution was transferred to a separatory funnel, extracted with n-heptane (100 ml x 3), the combined n-heptane layers were washed with water until the washings became neutral, and the solvent was distilled off under reduced pressure. The residue was 4-[4″-(trans-4-propylcyclohexyl)cyclohexane-1″-ol]biphenyl, to which 15 g of potassium hydrogen sulfate was added and the mixture was heated at 170°C in a N 2 stream.
time to dehydrate. After cooling, add 300ml of n-heptane, separate the potassium hydrogen sulfate, wash the n-heptane layer with water on a separating funnel until the washings become neutral, remove the solvent under reduced pressure, and separate the n-heptane and acetone. The product obtained by recrystallization is 4-[4″-(trans-
4-propylcyclohexyl)cyclohexene-1″-yl]biphenyl. 5.4
Dissolve g (0.0150 mol) in 300 ml of ethanol,
2.2 g of Raney nickel catalyst was added, and catalytic reduction was carried out in an autoclave at 50° C. by applying hydrogen pressure of 5 kg/cm 2 . The reduction reaction was monitored by gas chromatography and was terminated when the raw material disappeared, that is, after 5 hours. The amount of hydrogen absorbed at this time was 410 ml.
After removing the catalyst, the solvent was distilled off under reduced pressure, and the residue was recrystallized from n-heptane to give 4-[trans-4″-
(trans-4-propylcyclohexyl)cyclohexyl]biphenyl is obtained. of this
Dissolve 2.5g (0.0069mol) in 200ml of acetic acid and add pure water.
1.3ml, concentrated sulfuric acid 1.4ml, iodic acid 0.28g, iodine
A mixture of 0.71 g and 0.6 ml of carbon tetrachloride was refluxed at 80°C for 10 hours. The reaction solution was cooled, the precipitated crystals were filtered, and the crystals were recrystallized with n-heptane to obtain 4-iodo-4'-[trans-4''-(trans-4-propylcyclohexyl)cyclohexyl]. Biphenyl. 2.1g of this stuff.
(0.0043 mol) in N,N-dimethylformamide
Dissolve in 100ml, add 0.77g of cuprous cyanide,
The mixture was refluxed at 130°C for 5 hours. After cooling, n-heptane
Add 100 ml of 30% ammonia water to 100 ml to separate the liquid, then wash with water, wash with 6N hydrochloric acid, and then wash with water until the washing liquid becomes neutral. Remove the solvent under reduced pressure,
Recrystallized with n-heptane, the obtained product is 4-cyano-4′-[trans-4″-(trans-4-
Propylcyclohexyl)cyclohexyl]biphenyl. Yield 0.7g, yield 42% for cyanation reaction, C-Sm point 109.0℃, Sm-N point 155.9
℃, and the N-I point was 380℃ (extrapolated value). Examples 2 and 3 Cyclohexylcyclohexanone and 4-(trans-4'-pentylcyclohexyl)cyclohexanone were used in place of 4-(trans-4'-propylcyclohexyl)cyclohexane in Example 1, and the first Compounds of formula () shown in the Examples 2 and 3 columns of the table were obtained. The yield properties and the like are shown in Table 1 together with the results of Example 1.
【表】
実施例 4
トランス―4―プロピル―(4′―シアノフエニ
ル)シクロヘキサン 28%
トランス―4―ペンチル―(4′―シアノフエニ
ル)シクロヘキサン 42%
トランス―4―ヘプチル―(4′―シアノフエニ
ル)シクロヘキサン 30%
なる組成の液晶組成物のネマチツク液晶温度範囲
は−3〜52℃である。この液晶組成物をセル厚
10μmのTNセル(ねじれネマチツクセル)に封
入したものの動作しきい電圧は1.53V、飽和電圧
は2.12Vであつた。又粘度は20℃で23cpであつ
た。
上記の液晶組成物95部に本発明の実施例1の4
―シアノ―4′―〔トランス―4″―(トランス―4
―プロピルシクロヘキシル)シクロヘキシル〕
ビフエニル5部を加えた液晶組成物のネマチツク
液晶温度範囲は−15〜64.0℃に広がり、又これを
先と同じ10μmのセル厚のTNセルに封入したも
のの動作しきい電圧は1.63V飽和電圧は2.3Vであ
り、20℃における粘度は25.6cpであつた。[Table] Example 4 Trans-4-propyl-(4'-cyanophenyl)cyclohexane 28% Trans-4-pentyl-(4'-cyanophenyl)cyclohexane 42% Trans-4-heptyl-(4'-cyanophenyl)cyclohexane 30 %, the nematic liquid crystal temperature range of the liquid crystal composition is -3 to 52°C. This liquid crystal composition has a cell thickness of
When sealed in a 10 μm TN cell (twisted nematic cell), the operating threshold voltage was 1.53V and the saturation voltage was 2.12V. The viscosity was 23 cp at 20°C. 4 of Example 1 of the present invention was added to 95 parts of the above liquid crystal composition.
-Cyano-4′-[Trans-4″-(Trans-4
-Propylcyclohexyl) cyclohexyl]
The nematic liquid crystal temperature range of the liquid crystal composition containing 5 parts of biphenyl expands from -15 to 64.0°C, and when this is sealed in a TN cell with the same cell thickness of 10 μm, the operating threshold voltage is 1.63V, and the saturation voltage is The voltage was 2.3V, and the viscosity at 20°C was 25.6cp.
Claims (1)
基を示す) で表わされる4―シアノ―4′―〔トランス―4″―
(トランス―4―アルキルシクロヘキシル)シ
クロヘキシル〕ビフエニル。[Claims] 1. General formula (In the above formula, R represents hydrogen or an alkyl group having 1 to 6 carbon atoms) 4-cyano-4′-[trans-4″-
(trans-4-alkylcyclohexyl)cyclohexyl]biphenyl.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12906981A JPS5832856A (en) | 1981-08-18 | 1981-08-18 | 4-cyano-4'-(trans 4"-(trans-4'''-alkylcyclohexyl) cyclohexyl)biphenyl |
DE3223637A DE3223637C2 (en) | 1981-07-09 | 1982-06-24 | Cyano-mono- or -diphenylbicyclohexane derivatives and their use in liquid crystal compositions |
US06/396,484 US4439340A (en) | 1981-07-09 | 1982-07-08 | Cyano-mono-or diphenylbicyclohexane derivatives |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12906981A JPS5832856A (en) | 1981-08-18 | 1981-08-18 | 4-cyano-4'-(trans 4"-(trans-4'''-alkylcyclohexyl) cyclohexyl)biphenyl |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5832856A JPS5832856A (en) | 1983-02-25 |
JPS64385B2 true JPS64385B2 (en) | 1989-01-06 |
Family
ID=15000308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12906981A Granted JPS5832856A (en) | 1981-07-09 | 1981-08-18 | 4-cyano-4'-(trans 4"-(trans-4'''-alkylcyclohexyl) cyclohexyl)biphenyl |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5832856A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994016856A1 (en) * | 1993-01-27 | 1994-08-04 | Kabushiki Kaisha Komatsu Seisakusho | Movable backing device |
-
1981
- 1981-08-18 JP JP12906981A patent/JPS5832856A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5832856A (en) | 1983-02-25 |
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