JPS643092Y2 - - Google Patents

Info

Publication number
JPS643092Y2
JPS643092Y2 JP18254681U JP18254681U JPS643092Y2 JP S643092 Y2 JPS643092 Y2 JP S643092Y2 JP 18254681 U JP18254681 U JP 18254681U JP 18254681 U JP18254681 U JP 18254681U JP S643092 Y2 JPS643092 Y2 JP S643092Y2
Authority
JP
Japan
Prior art keywords
terminal
light emitting
emitting diode
phototransistor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18254681U
Other languages
Japanese (ja)
Other versions
JPS5886581U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18254681U priority Critical patent/JPS5886581U/en
Publication of JPS5886581U publication Critical patent/JPS5886581U/en
Application granted granted Critical
Publication of JPS643092Y2 publication Critical patent/JPS643092Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は、物体の有無あるいは原点等の位置検
出を行なうための非接触型のフオトセンサに於て
フオトセンサ自身の短絡または断線等による異常
状態を検出する機能を付加したフオトセンサ回路
に関するものである。
[Detailed description of the invention] The present invention is a non-contact type photo sensor for detecting the presence or absence of an object or the position of an origin, etc., which has an additional function to detect an abnormal state due to a short circuit or disconnection of the photo sensor itself. It is related to circuits.

従来の位置検出用センサとしてはマイクロスイ
ツチやフオトセンサ等が使用されていたが、近年
寿命、信頼性等の利点から非接触型のフオトセン
サが主として使用されるようになつている。しか
し、従来のマイクロスイツチでは使用するケーブ
ルがコモン端子及びメーク端子あるいはブレーク
端子の2本であるのに対し、非接触型のフオトセ
ンサは第1図に示すように、発光ダイオードのア
ノード端子と、フオトトランジスタのコレクタ端
子と、発光ダイオードのカソード及びフオトトラ
ンジスタのエミツタを共通端子とした3本のケー
ブルを、電流制限用抵抗、比較器及びアースに
各々接続してフオトセンサ回路を構成していた。
このためフオトセンサ回路を多数使用する装置で
はケーブル数の増加による配線工数の増大、さら
に配線個所の接続不良あるいはケーブルの短絡ま
たは断線が生じた場合の検査の繁雑さ等の問題が
生じていた。
Microswitches, photo sensors, and the like have been used as conventional position detection sensors, but in recent years, non-contact type photo sensors have come to be mainly used due to their advantages such as longevity and reliability. However, while conventional microswitches use two cables: a common terminal and a make or break terminal, non-contact type photo sensors use two cables: the anode terminal of the light emitting diode and the photo terminal, as shown in Figure 1. A photo sensor circuit was constructed by connecting three cables, each with the common terminals of the collector terminal of the transistor, the cathode of the light emitting diode, and the emitter of the phototransistor, connected to a current limiting resistor, a comparator, and ground.
For this reason, in devices that use a large number of photo sensor circuits, there are problems such as an increase in the number of cables, which increases the number of wiring man-hours, and the complexity of inspections in the event of a poor connection at a wiring location or a short circuit or disconnection of a cable.

本考案は上述の欠点を解決するために、フオト
センサへのケーブル数をマイクロスイツチと同様
に2本にして、短絡または断線の発生頻度を減少
させ、更に短絡または断線による異常状態を検出
する機能を付加したものである。
In order to solve the above-mentioned drawbacks, the present invention reduces the number of cables connected to the photo sensor to two, similar to the micro switch, to reduce the frequency of short circuits or disconnections, and also has a function to detect abnormal conditions due to short circuits or disconnections. It was added.

すなわち、電源電圧端子とアース端子との間に
各々直列に接続された電流制限用抵抗、発光ダイ
オード及びフオトトランジスタと、前記フオトト
ランジスタに並列に接続された電流分岐用抵抗と
前記電流制限用抵抗と前記発光ダイオードとの接
続端子に出力される電圧値と動作状態判定基準値
とを比較する比較器とでフオトセンサへのケーブ
ル数を最少の2本にしたフオトセンサ回路を構成
し、動作状態の判定を可能ならしめると同時に、
前記動作状態判定基準値を短絡または断線による
異常状態判定基準値に切り替えて、前記電流検出
用抵抗と前記発光ダイオードとの接続端子に出力
される電圧値と比較することにより、異常状態検
出をも可能としたものである。
That is, a current limiting resistor, a light emitting diode, and a phototransistor are each connected in series between a power supply voltage terminal and a ground terminal, and a current branching resistor and the current limiting resistor are connected in parallel to the phototransistor. A photo sensor circuit with a minimum number of two cables connected to the photo sensor is configured with a comparator that compares the voltage value output to the connection terminal with the light emitting diode and an operating state determination reference value, and the operating state is determined. While making it possible,
The abnormal state can also be detected by switching the operating state determination reference value to an abnormal state determination reference value due to a short circuit or disconnection, and comparing it with a voltage value output to a connection terminal between the current detection resistor and the light emitting diode. This made it possible.

第2図は本考案の一実施例を示し、同図におい
て、R1,R2は抵抗、Dは発光ダイオード、Qは
フオトトランジスタ、1は電源電圧端子、2は端
子5に出力される電圧値と動作、短絡または断線
による異常の各状態判定基準値とを比較する比較
器4の出力端子、3は前記動作、短絡または断線
による異常の各状態判定基準値を入力する端子、
5及び7は前記抵抗R1と前記発光ダイオードD
とを接続する端子、6及び8は端子、9は遮蔽物
を各々示す。ここで抵抗R2は、フオトトランジ
スタQがOFF状態の時に発光ダイオードDに最
低限発光させるに必要な電流を流すためのもので
ある。次に動作について説明すると、第2図にお
いて、遮蔽物9が発光ダイオードDとフオトトラ
ンジスタQの間に入り光を遮断した時、フオトト
ランジスタQはCFF状態となり、発光ダイオー
ドDの電圧降下をVDOFF、端子5の電圧をVPOFF
端子1の電圧をVCとするとVPOFF=(VC・R2
VDOFFR1)/(R1+R2)となる。また遮蔽物9が
発光ダイオードDとフオトトランジスタQの間に
入つていない時、フオトトランジスタQはON状
態となり、発光ダイオードDの電圧降下をVDON
端子5の電圧をVPON、フオトトランジスタQの
コレクタ・エミツタ間電圧をVQとすると、VPON
=VDON+VQとなる。発光ダイオードDの電圧降
下VD≒VDOFF≒VDONとすると、比較器4の動作状
態判定基準電圧VSAは、VSA=(VPON+VPOFF)/
2≒VC・R2+VD(2R1+R2)+VQ(R1+R2)/
2・(R1+R2)となり、前記動作状態判定基準値
VSAを端子3へ入力して、端子5の電圧と比較す
ることにより、フオトセンサ回路の動作状態の判
定を行なうことができる。
FIG. 2 shows an embodiment of the present invention, in which R 1 and R 2 are resistors, D is a light emitting diode, Q is a phototransistor, 1 is a power supply voltage terminal, and 2 is a voltage output to terminal 5. An output terminal of a comparator 4 that compares the value with a reference value for determining each state of abnormality due to operation, short circuit or disconnection; 3 is a terminal for inputting the reference value for determining each state of abnormality due to operation, short circuit or disconnection;
5 and 7 are the resistor R1 and the light emitting diode D
6 and 8 are terminals, and 9 is a shield, respectively. Here, the resistor R 2 is used to flow a minimum amount of current necessary to cause the light emitting diode D to emit light when the phototransistor Q is in the OFF state. Next, to explain the operation, in FIG. 2, when the shield 9 enters between the light emitting diode D and the phototransistor Q and blocks the light, the phototransistor Q becomes the CFF state, and the voltage drop of the light emitting diode D is reduced to V DOFF. , the voltage at terminal 5 is V POFF ,
If the voltage at terminal 1 is V C , then V POFF = (V C・R 2 +
V DOFF R 1 )/(R 1 + R 2 ). Furthermore, when the shield 9 is not inserted between the light emitting diode D and the phototransistor Q, the phototransistor Q is in the ON state, and the voltage drop of the light emitting diode D is reduced to V DON ,
If the voltage at terminal 5 is V PON and the voltage between the collector and emitter of phototransistor Q is V Q , then V PON
=V DON +V Q. Assuming that the voltage drop of the light emitting diode D is V D ≒ V DOFF ≒ V DON , the operating state determination reference voltage V SA of the comparator 4 is V SA = (V PON + V POFF )/
2≒V C・R 2 +V D (2R 1 +R 2 ) +V Q (R 1 +R 2 )/
2・(R 1 + R 2 ), which is the operating state judgment reference value.
By inputting V SA to terminal 3 and comparing it with the voltage at terminal 5, the operating state of the photo sensor circuit can be determined.

次に端子5,6間が短絡した場合、端子5の電
圧はほぼ0ボルトとなるので、短絡状態判定基準
値VSSを0<VSS<VSAの範囲で適当な値に選択し
て端子3へ切り替え入力し、端子5の電圧と比較
することにより、短絡による異常状態の判定が可
能となる。更に端子5,6間が断線した場合、端
子5の電圧はほぼ電源電圧VCなるので、断線状
態判定基準値VSOをVSA<VSO<VCの範囲で適当な
値に選択して端子3へ切り替え入力し、端子5の
電圧と比較することにより、断線による異常状態
の判定が可能となる。尚、前記動作、短絡または
断線による異常の各状態判定基準値は、リレーや
アナログスイツチ等による切に替え入力でもD/
Aコンバータによるプログラム設定による切り替
え入力でもよいことはいうまでもない。
Next, if there is a short circuit between terminals 5 and 6, the voltage at terminal 5 will be approximately 0 volts, so select the short circuit condition determination reference value V SS to an appropriate value within the range of 0 < V SS < V SA and set the voltage between terminals 5 and 6. By switching the input to terminal 3 and comparing it with the voltage at terminal 5, it is possible to determine an abnormal state due to a short circuit. Furthermore, if there is a disconnection between terminals 5 and 6, the voltage at terminal 5 will be approximately the power supply voltage V C , so select an appropriate value for the disconnection condition determination reference value V SO in the range of V SA < V SO < V C. By switching input to the terminal 3 and comparing it with the voltage at the terminal 5, it becomes possible to determine an abnormal state due to a disconnection. In addition, the reference values for determining each state of abnormality due to the above operation, short circuit, or disconnection can be determined by switching inputs using relays, analog switches, etc.
It goes without saying that a switching input based on program settings by the A converter may also be used.

以上説明した様に、本考案によれば、ケーブル
数が最少にして短絡または断線の発生頻度も少な
く、且つ短絡または断線による異常状態を検出す
る機能をもつたフオトセンサ回路を得ることがで
きる。
As described above, according to the present invention, it is possible to obtain a photo sensor circuit which minimizes the number of cables, reduces the frequency of occurrence of short circuits or disconnections, and has the function of detecting abnormal conditions due to short circuits or disconnections.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来使用されているフオトセンサ回路
の結線図、第2図は本考案による異常検出付きフ
オトセンサ回路結線図を示し、R1,R2は抵抗、
Dは発光ダイオード、Qはフオトトランジスタ、
4は比較器、9は遮蔽物、1,2,3,5,6,
7,8は端子を示す。
Fig. 1 shows a wiring diagram of a conventionally used photo sensor circuit, and Fig. 2 shows a wiring diagram of a photo sensor circuit with abnormality detection according to the present invention, where R 1 and R 2 are resistors,
D is a light emitting diode, Q is a phototransistor,
4 is a comparator, 9 is a shield, 1, 2, 3, 5, 6,
7 and 8 indicate terminals.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電源電圧端子1とアース端子6との間に各々直
列に接続された電流制限用抵抗R1、発光ダイオ
ードDおよびフオトトランジスタQと、前記フオ
トトランジスタQに並列に接続された電流分岐用
抵抗R2と、前記電流制限用抵抗R1と前記発光ダ
イオードDとの接続端子5に出力される電圧値と
予め外部より端子3に印加された動作、短絡また
は断線による異常の各状態判定基準値とを比較す
る比較器4とで構成され、フオトセンサ回路に発
生した異常状態を検出することを特徴とする異常
検出機能付きフオトセンサ回路。
A current limiting resistor R 1 , a light emitting diode D and a phototransistor Q are connected in series between the power supply voltage terminal 1 and the ground terminal 6, and a current branching resistor R 2 is connected in parallel to the phototransistor Q. , the voltage value output to the connection terminal 5 between the current limiting resistor R 1 and the light emitting diode D, and the reference value for determining each state of abnormality due to operation, short circuit or disconnection that has been applied to the terminal 3 from the outside in advance. 1. A photo sensor circuit with an abnormality detection function, comprising a comparator 4 for comparison, and detecting an abnormal state occurring in the photo sensor circuit.
JP18254681U 1981-12-08 1981-12-08 Photo sensor circuit with abnormality detection function Granted JPS5886581U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18254681U JPS5886581U (en) 1981-12-08 1981-12-08 Photo sensor circuit with abnormality detection function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18254681U JPS5886581U (en) 1981-12-08 1981-12-08 Photo sensor circuit with abnormality detection function

Publications (2)

Publication Number Publication Date
JPS5886581U JPS5886581U (en) 1983-06-11
JPS643092Y2 true JPS643092Y2 (en) 1989-01-26

Family

ID=29981004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18254681U Granted JPS5886581U (en) 1981-12-08 1981-12-08 Photo sensor circuit with abnormality detection function

Country Status (1)

Country Link
JP (1) JPS5886581U (en)

Also Published As

Publication number Publication date
JPS5886581U (en) 1983-06-11

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