JPS6425410U - - Google Patents
Info
- Publication number
- JPS6425410U JPS6425410U JP12006887U JP12006887U JPS6425410U JP S6425410 U JPS6425410 U JP S6425410U JP 12006887 U JP12006887 U JP 12006887U JP 12006887 U JP12006887 U JP 12006887U JP S6425410 U JPS6425410 U JP S6425410U
- Authority
- JP
- Japan
- Prior art keywords
- rocker arm
- storage hole
- spacer
- view
- hydraulic valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 238000002485 combustion reaction Methods 0.000 claims 1
Landscapes
- Valve-Gear Or Valve Arrangements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12006887U JPS6425410U (me) | 1987-08-05 | 1987-08-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12006887U JPS6425410U (me) | 1987-08-05 | 1987-08-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425410U true JPS6425410U (me) | 1989-02-13 |
Family
ID=31365844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12006887U Pending JPS6425410U (me) | 1987-08-05 | 1987-08-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425410U (me) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7399701B2 (en) | 2005-05-09 | 2008-07-15 | Elpida Memory Inc. | Semiconductor device manufacturing method including forming a metal silicide layer on an indium-containing layer |
-
1987
- 1987-08-05 JP JP12006887U patent/JPS6425410U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7399701B2 (en) | 2005-05-09 | 2008-07-15 | Elpida Memory Inc. | Semiconductor device manufacturing method including forming a metal silicide layer on an indium-containing layer |