JPS642409Y2 - - Google Patents
Info
- Publication number
- JPS642409Y2 JPS642409Y2 JP1982134766U JP13476682U JPS642409Y2 JP S642409 Y2 JPS642409 Y2 JP S642409Y2 JP 1982134766 U JP1982134766 U JP 1982134766U JP 13476682 U JP13476682 U JP 13476682U JP S642409 Y2 JPS642409 Y2 JP S642409Y2
- Authority
- JP
- Japan
- Prior art keywords
- pad
- voltage
- resistor
- attenuator
- trimming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009966 trimming Methods 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 4
- 230000002238 attenuated effect Effects 0.000 claims 1
- 238000013016 damping Methods 0.000 description 12
- 239000000523 sample Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Attenuators (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【考案の詳細な説明】
この考案は、薄膜抵抗あるいは厚膜抵抗による
減衰器に関し、特に大きな減衰比と高精度を必要
とする減衰器のパターンニングに関するものであ
る。[Detailed Description of the Invention] This invention relates to an attenuator using a thin film resistor or a thick film resistor, and particularly relates to patterning of an attenuator that requires a large attenuation ratio and high precision.
〈考案の背景〉
例えば電圧測定器のように、入力電圧を高確度
に広範囲の電圧を測定する場合には、小型なもの
で高精度の減衰器が要求される。このため抵抗体
としてはタンタルなどの材料による薄膜抵抗や酸
化ルテニユームなどの材料による厚膜抵抗を用い
トリミングすることにより精度の高い減衰比を得
ている。<Background of the Idea> For example, when input voltage is to be measured over a wide range of voltages with high accuracy, such as with a voltage measuring device, a small and highly accurate attenuator is required. For this reason, a highly accurate attenuation ratio can be obtained by trimming a thin film resistor made of a material such as tantalum or a thick film resistor made of a material such as ruthenium oxide as the resistor.
従来は、第１図のような回路構成で、抵抗R1
と抵抗R2で電圧V1を分圧して電圧Vμを得る減衰
器を構成していた。この場合、電圧V1を抵抗R1
＋R2に印加し、抵抗R2の両端子間の電圧を測定
しVμ／V1＝R2／（R1＋R2）から抵抗R2若しく
は抵抗R1をトリミングすることによつて希望す
る減衰比Vμ／V1を得ていた。 Conventionally, the circuit configuration was as shown in Figure 1, and the resistance R 1
This constituted an attenuator that divides voltage V 1 with resistor R 2 to obtain voltage Vμ. In this case, the voltage V 1 is connected to the resistance R 1
+R 2 and measure the voltage across the resistor R 2 and trim the resistor R 2 or resistor R 1 from Vμ/V 1 = R 2 / (R 1 + R 2 ) to obtain the desired attenuation. The ratio Vμ/V 1 was obtained.
〈従来の欠点〉
従来の回路構成では、減衰比が比較的小さい範
囲には高精度の減衰比が得られていたが、減衰比
が100：１ 1000：１と大きくなつてくるとV1に
高精度の高電圧を必要とし、あるいは小電圧を測
定する高感度で高確度の電圧Vμの測定器を必要
とする。従つて調整方法が煩雑となり、また高精
度の減衰比が得られなくなる欠点があつた。<Conventional drawbacks> With the conventional circuit configuration, a highly accurate damping ratio could be obtained in a relatively small range, but as the damping ratio increases from 100:1 to 1000:1, V 1 High precision high voltage is required, or a highly sensitive and accurate voltage Vμ measuring instrument is required to measure small voltages. Therefore, the adjustment method is complicated and a highly accurate damping ratio cannot be obtained.
〈考案の目的〉
この考案は上記の問題点を解決したもので、減
衰比が比較的大きな場合でもその減衰比を高精度
に得ることを目的とする。<Purpose of the invention> This invention solves the above problems and aims to obtain a damping ratio with high accuracy even when the damping ratio is relatively large.
〈考案の概要〉
この考案は減衰比が比較的大きな場合、その構
成および調整を２以上に分割して大きな減衰比を
得るようにする。例えば100：１の減衰比を得る
場合にこれを10：１と10：１に分割し、それぞれ
を高精度にトリミングして調整して、要求する高
精度の100：１の減衰器を得るものである。この
とき、膜抵抗の中間に金あるいは銅等の材料によ
るトリミング用のパツドを必要とするが、電流印
加用のパツドと電圧測定用のパツドを共用する
と、そのために誤差を生じる。この誤差を除去す
るためにこの考案は、電圧測定用のパツドを主抵
抗から分岐して設け、高精度の減衰器を得るもの
である。<Summary of the invention> In this invention, when the damping ratio is relatively large, the configuration and adjustment are divided into two or more parts to obtain a large damping ratio. For example, if you want to obtain a 100:1 attenuation ratio, divide it into 10:1 and 10:1, and trim and adjust each with high precision to obtain the desired high precision 100:1 attenuator. It is. At this time, a pad for trimming made of a material such as gold or copper is required between the membrane resistors, but if the pad for current application and the pad for voltage measurement are shared, an error will occur. In order to eliminate this error, this invention provides a pad for voltage measurement branched from the main resistor to obtain a highly accurate attenuator.
〈考案の実施例〉
第２図に減衰比100：１のこの考案による減衰
器の一実施例を示す。減衰器は膜抵抗RAB、RBD、
およびRDE、ボンデング用パツドＡ、Ｄおよび
Ｅ、トリミング用パツドＢ，ＣおよびE′により構
成され、トリミング用パツドＣは電圧測定用のパ
ツドであり、金や銅の導電性のよい膜によりトリ
ミング用パツドＢの近辺の抵抗RBDに接続されて
いる。トリミング用パツドＢは電圧印加用のパツ
ドである。上記の構成により、始めパツドCE間
の抵抗（R2＋R3）とパツドDE間の抵抗R3の比を
10：１になるように抵抗RBDあるいはRDEをトリ
ミングして高精度に調整する。このとき電圧Ｖは
パツドBE間に印加して電圧測定器はパツドCE間
とパツドDE間の電圧を測定して調整する。減衰
比VDE／VCE＝R3／（R2＋R3）＝１／10の調整が
終ずと、次にVCE／VAE＝（R2＋R3）／（R1＋R2
＋R3）＝１／10になるように抵抗RABのトリミグ
を行ない調整する。このとき電圧V1はパツドAE
間に印加し電圧ＶはパツドAE間およびCE間で測
定する。この結果、減衰比VDE／VAE＝１／100の
高精度の減衰器を得るのである。<Embodiment of the invention> Fig. 2 shows an embodiment of an attenuator according to this invention with a damping ratio of 100:1. The attenuator has membrane resistances R AB , R BD ,
and R DE , bonding pads A, D, and E, and trimming pads B, C, and E'. Trimming pad C is a pad for voltage measurement, and is trimmed with a gold or copper film with good conductivity. It is connected to the resistor RBD near the pad B. The trimming pad B is a pad for voltage application. With the above configuration, the ratio of the resistance (R 2 + R 3 ) between the initial pads CE and the resistance R 3 between the pads DE is
Adjust with high precision by trimming the resistor R BD or R DE so that the ratio is 10:1. At this time, voltage V is applied between pads BE, and the voltage measuring device measures and adjusts the voltages between pads CE and DE. After adjusting the damping ratio V DE /V CE = R 3 / (R 2 + R 3 ) = 1/10, next V CE / V AE = (R 2 + R 3 ) / (R 1 + R 2
Adjust by trimming the resistor R AB so that +R 3 ) = 1/10. At this time, the voltage V 1 is pad AE
The voltage V applied between pads is measured between pads AE and CE. As a result, a highly accurate attenuator with a damping ratio V DE /V AE = 1/100 is obtained.
ここでトリミング用パツドをＢの他に主抵抗か
ら分岐したパツドＣを設ける理由について説明す
る。第３図および第４図はパツドＣを設けなかつ
た場合の説明図である。第３図はパツドBE間に
電圧を印加した場合、第４図はパツドAE間に電
圧を印加した場合の説明図であり、ここで１は電
圧印加用プローブであり、２は電圧測定用プロー
ブである。第３図の場合、電流はプローブ１から
抵抗RBDに流れるが、プローブ１と抵抗RBD間の
徴少抵抗r1は、プローブ１の位置によつて電流分
布が異なつているため種々の異つた値をとる。第
４図の場合は電流はパツドＡ−抵抗RAB−パツド
Ｂ−抵抗RBDと流れるのでパツドＢの電流分布は
一定となり、パツドＢの徴少抵抗r2は一定とな
る。また電圧測定用プローブ２の位置によりパツ
ドＢの徴少抵抗r1もしくはr2の中間の電圧を測定
することとなり、電圧測定用プローブ２の位置に
よる測定誤差も生じてくる。このように電圧印加
用パツドと電圧測定用パツドを共用すると原理的
に誤差が発生することとなり高精度の減衰器を得
ることができないのである。そこでこの誤差を除
去するため、主抵抗から分岐した電圧測定用のパ
ツドＣを設ける。第５図は主抵抗から分岐した電
圧測定用パツドＣを設けた場合の説明図である。
電圧測定器の入力インピーダンスは、ほゞ無限大
とすることができるので、パツドＣと抵抗RBD間
の分岐路の徴少抵抗r0は無視することができ、抵
抗RBDと分岐路との交点の電圧をパツドＣで高確
度に読み取ることができる。そこでパツドＢの徴
少抵抗r2はそのまま抵抗R1に含ませることができ
るので誤差の要因を除去でき、正確な減衰比のト
リミングができるのである。 Here, the reason why pad C branched from the main resistor is provided in addition to trimming pad B will be explained. FIGS. 3 and 4 are explanatory diagrams in the case where the pad C is not provided. Fig. 3 is an explanatory diagram when a voltage is applied between pads BE, and Fig. 4 is an explanatory diagram when a voltage is applied between pads AE. Here, 1 is a probe for voltage application, and 2 is a probe for voltage measurement. It is. In the case of Fig. 3, the current flows from probe 1 to resistor RBD , but the small resistance r1 between probe 1 and resistor RBD varies depending on the position of probe 1 because the current distribution differs depending on the position of probe 1. Take the ivy value. In the case of FIG. 4, the current flows from pad A to resistor R AB to pad B to resistor R BD , so the current distribution in pad B is constant, and the small resistance r 2 of pad B is constant. Further, depending on the position of the voltage measuring probe 2, a voltage between the small resistances r1 or r2 of the pad B is measured, and measurement errors occur depending on the position of the voltage measuring probe 2. If the pad for voltage application and the pad for voltage measurement are used in common in this way, errors will occur in principle, making it impossible to obtain a highly accurate attenuator. Therefore, in order to eliminate this error, a voltage measurement pad C is provided that branches off from the main resistor. FIG. 5 is an explanatory diagram when a voltage measuring pad C branched from the main resistor is provided.
Since the input impedance of the voltage measuring device can be made almost infinite, the small resistance r 0 of the branch path between pad C and resistor R BD can be ignored, and the resistance between resistor R BD and the branch path The voltage at the intersection can be read with high accuracy using pad C. Therefore, the small resistance r2 of pad B can be included in the resistance R1 as it is, so the error factor can be removed and the attenuation ratio can be trimmed accurately.
パツドＤも電圧測定用プローブ２の位置の差異
による電圧測定誤差が生じないように主抵抗から
分岐して設ける。その理由は第４図の説明と同じ
である。 The pad D is also provided branching off from the main resistor so that voltage measurement errors do not occur due to differences in the position of the voltage measurement probe 2. The reason is the same as explained in FIG.
同じようにパツドＥにおいても、第２図に示す
ように電圧測定用パツドE′を設けるのが望まし
い。 Similarly, it is desirable to provide a voltage measuring pad E' for the pad E as shown in FIG.
以上説明したように100：１の減衰器は第２図
の構成でもつて従来の調整器で２分割の調整方法
により高精度に得ることができる。 As explained above, a 100:1 attenuator with the configuration shown in FIG. 2 can be obtained with high accuracy by using a conventional regulator and a two-division adjustment method.
1000：１の高精度減衰器は、同じようにして、
３分割の調整方法により得ることができる。この
ように大きな減衰比と高精度を要求する減衰器は
主抵抗から分岐した補助トリミング用パツドを設
けることにより容易に得ることができるのであ
る。 A 1000:1 precision attenuator can be created in the same way.
This can be obtained by a three-division adjustment method. An attenuator requiring such a large damping ratio and high precision can be easily obtained by providing an auxiliary trimming pad branched from the main resistor.
〈考案の効果〉
膜抵抗の減衰器において、その減衰比の調整を
２以上に分割してトリミングすることとし、トリ
ミング用パツドと主抵抗から分岐した補助トリミ
ング用パツドを設けることによつて、従来の調整
装置、トリミング方法を用いて原理的に誤差を除
去した高精度で減衰比の大きな減衰器を得る。<Effects of the invention> In a membrane resistor attenuator, the adjustment of the attenuation ratio is divided into two or more parts for trimming, and by providing a trimming pad and an auxiliary trimming pad branched from the main resistor, it is possible to Using the adjusting device and trimming method, we obtain an attenuator with high precision and a large damping ratio, which eliminates errors in principle.
第１図は従来の減衰器のパターンニングの説明
図、第２図Ａはこの考案による減衰器の一実施
例、第２図Ｂは第２図Ａの等価回路、第３図、第
４図、第５図はこの考案の説明図である。
Ａ，Ｄ，Ｅ……ボンデイング用パツト、Ｂ，Ｃ
……トリミング用パツト、１……電圧印加用プロ
ーブ、２……電圧測定用プローブ。
Fig. 1 is an explanatory diagram of patterning of a conventional attenuator, Fig. 2A is an example of an attenuator according to this invention, Fig. 2B is an equivalent circuit of Fig. 2A, and Figs. 3 and 4. , FIG. 5 is an explanatory diagram of this invention. A, D, E...bonding parts, B, C
...Trimming part, 1...Probe for voltage application, 2...Probe for voltage measurement.
Claims (1)
させる為のボンデング用パツドと電圧を印加する
ためのボンデング用パツドとの間に、電圧を印加
する為のトリミング用パツドと、このトリミング
用パツドに近接して主抵抗から分岐した電圧を測
定する為のトリミング用パツドとを１組以上設け
たことを特徴とする減衰器。 In an attenuator using membrane resistance, there is a trimming pad for applying voltage between a bonding pad for outputting an attenuated voltage and a bonding pad for applying voltage, and a trimming pad for applying voltage. An attenuator characterized in that it is provided with one or more sets of trimming pads for measuring the voltage branched from the main resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13476682U JPS59104615U (en) | 1982-09-03 | 1982-09-03 | attenuator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13476682U JPS59104615U (en) | 1982-09-03 | 1982-09-03 | attenuator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59104615U JPS59104615U (en) | 1984-07-14 |
| JPS642409Y2 true JPS642409Y2 (en) | 1989-01-20 |
Family
ID=30303561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13476682U Granted JPS59104615U (en) | 1982-09-03 | 1982-09-03 | attenuator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59104615U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260639A (en) * | 2008-04-16 | 2009-11-05 | Mitsubishi Electric Corp | High frequency amplifier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4839962A (en) * | 1971-09-25 | 1973-06-12 | ||
| JPS5145756A (en) * | 1974-10-18 | 1976-04-19 | Matsushita Electric Ind Co Ltd | ATSUMAKUTEIKONOTEIKOCHISHUSEIHO |
-
1982
- 1982-09-03 JP JP13476682U patent/JPS59104615U/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4839962A (en) * | 1971-09-25 | 1973-06-12 | ||
| JPS5145756A (en) * | 1974-10-18 | 1976-04-19 | Matsushita Electric Ind Co Ltd | ATSUMAKUTEIKONOTEIKOCHISHUSEIHO |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260639A (en) * | 2008-04-16 | 2009-11-05 | Mitsubishi Electric Corp | High frequency amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59104615U (en) | 1984-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4349777A (en) | Variable current source | |
| JPS6038619A (en) | Sensing circuit for quantity of air | |
| US2389615A (en) | Anemometer | |
| JPH02257017A (en) | Temperature compensation circuit | |
| JPH07107720B2 (en) | Method for determining the tap position of a resistance remote transmitter and circuit arrangement for implementing the method | |
| US5121064A (en) | Method and apparatus for calibrating resistance bridge-type transducers | |
| JPH0235251B2 (en) | ||
| US4766655A (en) | Method for fabricating a compensated silicon pressure sensing device | |
| JPS592332B2 (en) | load cell scale | |
| JPS642409Y2 (en) | ||
| US4672853A (en) | Apparatus and method for a pressure-sensitive device | |
| US5504681A (en) | Mass air flow sensor calibration | |
| GB1383062A (en) | Corrosion ratemeter | |
| US2759150A (en) | Circuit and method for producing standard voltages | |
| US4213088A (en) | Voltage measuring circuit | |
| GB625023A (en) | Improvements in or relating to wheatstone bridge measuring and computing devices | |
| US4733173A (en) | Electronic component measurement apparatus | |
| US1164032A (en) | Electrical measuring instrument. | |
| US3416084A (en) | Precision potentiometer circuit and method for establishing same | |
| JPS6314784B2 (en) | ||
| US2866948A (en) | Test circuit for interconnected components | |
| Lacey et al. | An improved potentiometric circuit for measuring the galvanic skin response | |
| US3421082A (en) | Rebalancing voltmeter having voltage responsive error sensing means and means to buck out current drawn by an input impedance | |
| US2162894A (en) | Method and apparatus for measuring nonlinear impedances | |
| US4210866A (en) | Linearizing circuit for a non-destructive testing instrument having a digital display |