JPS642271B2 - - Google Patents
Info
- Publication number
- JPS642271B2 JPS642271B2 JP55078777A JP7877780A JPS642271B2 JP S642271 B2 JPS642271 B2 JP S642271B2 JP 55078777 A JP55078777 A JP 55078777A JP 7877780 A JP7877780 A JP 7877780A JP S642271 B2 JPS642271 B2 JP S642271B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- type semiconductor
- conductivity type
- signal charges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 28
- 238000005036 potential barrier Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7877780A JPS574673A (en) | 1980-06-11 | 1980-06-11 | Solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7877780A JPS574673A (en) | 1980-06-11 | 1980-06-11 | Solid-state image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS574673A JPS574673A (en) | 1982-01-11 |
JPS642271B2 true JPS642271B2 (US06534493-20030318-C00166.png) | 1989-01-17 |
Family
ID=13671323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7877780A Granted JPS574673A (en) | 1980-06-11 | 1980-06-11 | Solid-state image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS574673A (US06534493-20030318-C00166.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428681U (US06534493-20030318-C00166.png) * | 1990-06-29 | 1992-03-06 |
-
1980
- 1980-06-11 JP JP7877780A patent/JPS574673A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428681U (US06534493-20030318-C00166.png) * | 1990-06-29 | 1992-03-06 |
Also Published As
Publication number | Publication date |
---|---|
JPS574673A (en) | 1982-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11019291B2 (en) | Solid-state imaging device and imaging system | |
KR100262774B1 (ko) | 상부 버스 가상 위상 프레임 행간 전송 ccd 영상 감지기 | |
JP3200436B2 (ja) | Ccd撮像器及びその駆動方法 | |
US7456888B2 (en) | Photoelectric conversion device and image pick-up system using the photoelectric conversion device | |
US5619049A (en) | CCD-type solid state image pickup with overflow drain structure | |
US20070134836A1 (en) | Solid State Image Sensing Device and Manufacturing and Driving Methods Thereof | |
JPS5819080A (ja) | 固体撮像素子 | |
EP0544260A1 (en) | Antiblooming structure for CCD image sensor | |
JP6743181B2 (ja) | 固体撮像素子 | |
EP0174133B1 (en) | A solid-state image sensor | |
EP1128437B1 (en) | Method of storing optically generated charges in a solid state imaging device | |
JP2677579B2 (ja) | 電荷結合装置及びこの装置を具えるカメラ | |
US4974043A (en) | Solid-state image sensor | |
JP3062010B2 (ja) | 固体撮像装置 | |
JP2007096084A (ja) | 固体撮像装置およびその駆動方法 | |
US5442208A (en) | Charge-coupled device having charge reset | |
EP0132870B1 (en) | Radiation-sensitive semiconductor device | |
JPS642271B2 (US06534493-20030318-C00166.png) | ||
JP2901328B2 (ja) | 固体撮像素子 | |
JPH0135546B2 (US06534493-20030318-C00166.png) | ||
EP0601638B1 (en) | Charge-coupled device | |
JPH0650774B2 (ja) | 固体撮像装置 | |
JPH0682823B2 (ja) | 固体撮像装置 | |
JPH03246952A (ja) | 電荷結合素子 | |
JP2906961B2 (ja) | 固体撮像装置 |