JPS6422067U - - Google Patents
Info
- Publication number
- JPS6422067U JPS6422067U JP11696287U JP11696287U JPS6422067U JP S6422067 U JPS6422067 U JP S6422067U JP 11696287 U JP11696287 U JP 11696287U JP 11696287 U JP11696287 U JP 11696287U JP S6422067 U JPS6422067 U JP S6422067U
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor
- laser device
- detection
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 3
Landscapes
- Optical Head (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11696287U JPS6422067U (en18) | 1987-07-30 | 1987-07-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11696287U JPS6422067U (en18) | 1987-07-30 | 1987-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422067U true JPS6422067U (en18) | 1989-02-03 |
Family
ID=31359969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11696287U Pending JPS6422067U (en18) | 1987-07-30 | 1987-07-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422067U (en18) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7180106B2 (en) | 2001-04-04 | 2007-02-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance |
-
1987
- 1987-07-30 JP JP11696287U patent/JPS6422067U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7180106B2 (en) | 2001-04-04 | 2007-02-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance |