JPS6415421U - - Google Patents
Info
- Publication number
- JPS6415421U JPS6415421U JP11079187U JP11079187U JPS6415421U JP S6415421 U JPS6415421 U JP S6415421U JP 11079187 U JP11079187 U JP 11079187U JP 11079187 U JP11079187 U JP 11079187U JP S6415421 U JPS6415421 U JP S6415421U
- Authority
- JP
- Japan
- Prior art keywords
- quartz substrate
- acoustic wave
- wave device
- surface acoustic
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
第１図及び第２図は本考案になる弾性表面波素
子の第１及び第２実施例を夫々示す断面図、第３
図は第１図に示す構成のＳＡＷ素子において、圧
電性薄膜の膜厚に対する電気機械結合係数Ｋ２の
変化図、第４図は第３図に示す本考案になるＳＡ
Ｗ素子の温度特性図、第５図は従来のＳＡＷ素子
の平面図、第６図は第５図に示すものの断面図で
ある。
１……圧電性基板、２……くし型電極（ＩＤＴ
）、４……水晶基板、５……圧電性薄膜、Ｋ２…
…電気機械結合係数。
1 and 2 are sectional views showing the first and second embodiments of the surface acoustic wave device according to the present invention, respectively;
The figure shows a change in the electromechanical coupling coefficient K2 with respect to the thickness of the piezoelectric thin film in the SAW element having the configuration shown in Figure 1, and Figure 4 shows the SAW element according to the present invention shown in Figure 3.
A temperature characteristic diagram of the W element, FIG. 5 is a plan view of a conventional SAW element, and FIG. 6 is a cross-sectional view of the one shown in FIG. 1... Piezoelectric substrate, 2... Interdigitated electrode (IDT
), 4... Quartz substrate, 5... Piezoelectric thin film, K2 ...
...electromechanical coupling coefficient.
Claims (1)
する弾性表面波素子において、前記水晶基板表面
に圧電性薄膜を被覆することにより、弾性表面波
素子の電気機械結合係数を変化させることを特徴
とする弾性表面波素子。 A surface acoustic wave device having at least one pair of interdigitated electrodes on a quartz substrate, characterized in that the electromechanical coupling coefficient of the surface acoustic wave device is changed by coating the surface of the quartz substrate with a piezoelectric thin film. surface wave element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079187U JPS6415421U (en) | 1987-07-20 | 1987-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11079187U JPS6415421U (en) | 1987-07-20 | 1987-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6415421U true JPS6415421U (en) | 1989-01-26 |
Family
ID=31348270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11079187U Pending JPS6415421U (en) | 1987-07-20 | 1987-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6415421U (en) |
-
1987
- 1987-07-20 JP JP11079187U patent/JPS6415421U/ja active Pending
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