JPS641195A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS641195A
JPS641195A JP62157053A JP15705387A JPS641195A JP S641195 A JPS641195 A JP S641195A JP 62157053 A JP62157053 A JP 62157053A JP 15705387 A JP15705387 A JP 15705387A JP S641195 A JPS641195 A JP S641195A
Authority
JP
Japan
Prior art keywords
sense amplifier
potential difference
preamplifier
read signal
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62157053A
Other languages
Japanese (ja)
Other versions
JPH011195A (en
Inventor
Kazutami Arimoto
Kiyohiro Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62157053A priority Critical patent/JPS641195A/en
Publication of JPH011195A publication Critical patent/JPH011195A/en
Publication of JPS641195A publication Critical patent/JPS641195A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE: To prevent a sense amplifier from malfunctioning by interposing a preamplifier which amplifies and outputs a potential difference generated between both bit lines at the time of the application of a read signal to a sense amplifier between a memory cell array and the sense amplifier.
CONSTITUTION: The preamplifier 14 which amplifies and outputs the potential difference generated between the 1st and 2nd bit lines 5a and 5b at the time of the application of the read signal to the sense amplifier 7 is interposed between the memory cell array 1 and sense amplifier 7, and the bit line potential generated by the preamplifier 14 at the time of the read signal application is amplified and outputted to the sense amplifier 7. Therefore, a potential difference which is larger than a specific value can be secured as the potential difference (bit line potential) to be applied to the sense amplifier 7. Consequently, even if cell area is small, the sense amplifier can be prevented from malfunctioning.
COPYRIGHT: (C)1989,JPO&Japio
JP62157053A 1987-06-23 1987-06-23 Semiconductor storage device Pending JPS641195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62157053A JPS641195A (en) 1987-06-23 1987-06-23 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62157053A JPS641195A (en) 1987-06-23 1987-06-23 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPH011195A JPH011195A (en) 1989-01-05
JPS641195A true JPS641195A (en) 1989-01-05

Family

ID=15641173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62157053A Pending JPS641195A (en) 1987-06-23 1987-06-23 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS641195A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001057875A1 (en) * 2000-02-04 2001-08-09 Hitachi, Ltd. Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001057875A1 (en) * 2000-02-04 2001-08-09 Hitachi, Ltd. Semiconductor device
US6687175B1 (en) 2000-02-04 2004-02-03 Renesas Technology Corporation Semiconductor device
US6990002B2 (en) 2000-02-04 2006-01-24 Renesas Technology Corp. Semiconductor device
US7126868B2 (en) 2000-02-04 2006-10-24 Renesas Technology Corp. Semiconductor device
US7242627B2 (en) 2000-02-04 2007-07-10 Renesas Technology Corp. Semiconductor device
US7813156B2 (en) 2000-02-04 2010-10-12 Renesas Technology Corp. Semiconductor device
US8199549B2 (en) 2000-02-04 2012-06-12 Renesas Electronics Corporation Semiconductor device
US8605478B2 (en) 2000-02-04 2013-12-10 Renesas Electronics Corporation Semiconductor device

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