JPS639743B2 - - Google Patents
Info
- Publication number
- JPS639743B2 JPS639743B2 JP57118774A JP11877482A JPS639743B2 JP S639743 B2 JPS639743 B2 JP S639743B2 JP 57118774 A JP57118774 A JP 57118774A JP 11877482 A JP11877482 A JP 11877482A JP S639743 B2 JPS639743 B2 JP S639743B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- gas
- thin film
- torr
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- -1 silicon monatomic ions Chemical class 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005685 electric field effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Description
本発明はケイ素薄膜とくに非晶質シリコンから
なる薄膜半導体の製造方法に関するものである。
太陽電池等に用いられる半導体として非晶質シリ
コンが注目されているが、従来の方法で作成され
たものは多量に水素を含んでいるため、耐熱性や
強い光による耐久性等に問題があり、最近では水
素の代りにフツ素を含む非晶質シリコンが、Si−
Ｆの結合エネルギーがSi−Ｈのそれよりも大きく
耐熱性にすぐれていること等の理由で注目され始
めている。
このフツ素を含む非晶質シリコン薄膜の製造法
として、アルゴンガス雰囲気中でSiF4ガスをスパ
ツタリングにより蒸着させたり、SiF4ガスを高周
波イオンプレーテイングにより蒸着させたり、
SiF2ガスをグロー放電により蒸着させたりする方
法が提案されている。しかしながらこれらの方法
で作られた薄膜は優れた耐熱性を示すが、数トー
ルから10-2トール程度の比較的真空度の低い雰囲
気中で蒸着がなされているため、不純物の取り込
みによる膜質の低下や、プラズマ制御の困難性に
起因する物質上のバラツキや不均一性が生じ、そ
のため、太陽電池材料として重要な特性の一つで
ある光導電率が十分なものが得られるという欠点
があつた。
本発明は上記の如き従来法の欠点にかんがみ、
耐熱性と共に光導電性にもすぐれ、とくに太陽電
池用半導体として有用な非晶質シリコンからなる
薄膜半導体を製造することの出来る方法を提供す
ることを目的としてなされたものであり、その要
旨は、10-5トール以下の高真空に排気された真空
容器内に、５×10-4トールから１×10-5トールの
範囲の分圧を有する様にSiF4ガスを導入し、該導
入ガスと、ケイ素を加熱蒸発させることにより生
成したケイ素原子とに加速電子を衝突させて電離
若しくは解離させ、かくして生成したガスイオン
及びケイ素単原子イオンに電界効果により高エネ
ルギーを付与して基材上に射突させて非晶質シリ
コンからなる薄膜を形成することを特徴とする薄
膜半導体の製造方法に存する。
以下図面を参照しながら本発明薄膜半導体の製
造方法について説明する。
第１図は本発明方法を実施するための装置の一
例を示す説明図であり、真空槽１内の真空室２は
排気口３に連結される排気系装置（油回転ポン
プ、油拡散ポンプ等で構成されているが、図示さ
れていない）によつて１×10-7トールまでの高真
空に排気されることが可能になされており、そし
て真空室２には電子ビーム蒸発源４（電源回路等
は図示されていない）、邪魔板５、ループ状のガ
ス導入管６、電子発生装置７、基材ホルダー８、
及びそれに取り付けられた基材９が設置されてお
り、更に真空槽１の外方には、装置を動作させる
ための電源１０〜１２とその回路、ループ状ガス
導入管６にバルブ１４によつて流量調節可能に接
続されたSiF4ガスが充填されたボンベ１３が設置
されている。
しかして、基材９としては例えばポリ塩化ビニ
ル、ポリフツ化ビニル、酢酸セルロース、ポリエ
チレンテレフタレート、ポリブチレンテレフタレ
ート、ポリエチレン、ポリプロピレン、ポリカー
ボネート、ポリイミド、ポリエーテルサルフオ
ン、ポリバラバン酸等の高分子材料、ガラス、磁
器、陶器等のセラミツク材料或いはアルミニウ
ム、ステンレススチール等の金属材料などのフイ
ルム状物又は薄板状物等が用いられてよく、又、
本発明方法にもとづいて薄膜半導体が設けられる
該基材の用途によつて、該基材に予めなんらかの
処理が施されていてもよい。例えば該基材から光
起電力素子を得ようとする場合には、該素子の電
極を金属材料の蒸着等によつて予め設けておき、
この上に本発明方法によつて薄膜半導体を形成す
ることが可能である。
次に第１図に示される装置を用いて薄膜半導体
を製造するには、第１図に示す様に基材９を基材
ホルダー８に取付け、電子ビーム蒸発源４のルツ
ボ４１にケイ素を供給し、次いで排気口３から排
気系装置によつて排気を行なつて真空室によつて
排気を行なつて真空室２を１×10-5トール好まし
くは１×10-7トールよりも高度の高真空となし、
真空度が安定したところでループ状ガス導入管６
よりバルブ１４を調節しながらSiF4ガスを分圧が
５×10-4トールから１×10-5トールの範囲になる
様に導入する。次いで電子ビーム蒸発源４を動作
させてルツボ４１内のケイ素を蒸気化させ、該ケ
イ素の原子状粒子と導入されたSiF4ガスを電子発
生装置７からの高速電子により衝突電離若しくは
解離せしめてイオン化させる。
なお、電子発生装置７はフイラメント７１、メ
ツシユ状電極７２及びガード電極７３から構成さ
れており、本実施例では電源１１により一400V
の直流電位を与えられたフイラメント７１に、電
源１０により30Aの交流電流を通電し加熱せしめ
熱電子を発生させると共にメツシユ状電極７２を
接地することにより上記熱電子を電界加速させて
高速電子を発生する様になされている。
前記によりイオン化されたSiF4イオン及びケイ
素の単原子イオンに対し、基材ホルダー８に電源
１２により負の直流高電圧を印加することで高エ
ネルギーを付与し、基材９表面に入射せしめる。
かくして基材９上に薄膜半導体である非晶質シリ
コンからなる薄膜が形成されるのである。
しかして本発明における高エネルギーとして
は、運動エネルギーが常温に於て10eVから8KeV
までの範囲のものが好適であり、この様な高エネ
ルギーが付与されたケイ素イオン及びSiF4イオン
が基材９表面に入射されることにより、半導体と
しての性能を有し、フツ素を含有する非晶質のシ
リコン薄膜が形成されるのである。
又、本発明方法においてはケイ素を単独で加熱
蒸発させること以外に、該ケイ素にさらに他の物
質を加えることも可能であり、例えばケイ素中に
ホウ素、アルミニウム、ガリウム等の周期律表
族の元素を混入しておくとｐ型半導体が、又、リ
ン、ヒ素、アンチモン、ビスマス等の周期律表
族の元素を混入しておくとｎ型半導体が夫々得ら
れる。
本発明薄膜半導体の製造方法は上述の通りの方
法であり、とくに高真空条件下でケイ素蒸発粒子
をイオン化し、該イオン化粒子を電界加速して基
材面に射突させて薄膜を形成させる方法におい
て、SiF4ガスを存在せしめる方法であるから、生
成する非晶質シリコン薄膜はフツ素を含むために
耐熱性にすぐれると共に、高真空条件下での蒸着
によつて光導電率においてもすぐれたものとなる
のである。
以下本発明を実施例にもとづいて説明する。
実施例 １
第１図に示される装置を用い高純度ケイ素上塊
（99.9999％以上）をルツボ４１に入れ、基材９と
してガラス板（米国コーニング社製7059ガラス）
を用い、該基材９を基材ホルダー８に取付け、基
材９を350℃に保つて、下記の条件で基材９表面
に厚さ1.5μｍの蒸着層を形成させた。
SiF4ガス導入前の圧力：１×10-7トール、
SiF4ガス分圧：５×10-5トール、
電子発生装置７における熱電子加速条件：400V、
電子発生装置７におけるイオン化電流：300ｍＡ、
基材ホルダー８に印加したイオン加速電圧：−
1.0K.W.、
かくして得られたシリコン薄膜を電力線回折に
より解折した結果、非晶質であることが確認され
た。そして、該薄膜の特性を調べた所、次表の通
りであり、非常にすぐれた特性を示し、又、該薄
膜を乾燥窒素中で600℃に30分間保つた後も特性
の変化は見られず、耐熱性にすぐれたものであつ
た。
The present invention relates to a method for manufacturing a silicon thin film, particularly a thin film semiconductor made of amorphous silicon.
Amorphous silicon is attracting attention as a semiconductor used in solar cells, etc., but silicon made using conventional methods contains a large amount of hydrogen, so there are problems with heat resistance and durability against strong light. Recently, amorphous silicon containing fluorine instead of hydrogen has been used as Si-
F is starting to attract attention because its bond energy is greater than that of Si-H and its heat resistance is excellent. As a manufacturing method for this amorphous silicon thin film containing fluorine, SiF 4 gas is deposited by sputtering in an argon gas atmosphere, SiF 4 gas is deposited by high frequency ion plating,
A method has been proposed in which SiF 2 gas is deposited by glow discharge. However, although the thin films produced by these methods exhibit excellent heat resistance, because they are deposited in an atmosphere with a relatively low degree of vacuum, ranging from a few torr to 10 -2 torr, the quality of the film may deteriorate due to the incorporation of impurities. In addition, variations and non-uniformity in the material occur due to the difficulty of plasma control, and as a result, it has the disadvantage that it is difficult to obtain a material with sufficient photoconductivity, which is one of the important properties for a solar cell material. . The present invention takes into consideration the drawbacks of the conventional method as described above, and
The purpose of this work was to provide a method for producing a thin film semiconductor made of amorphous silicon, which has excellent heat resistance and photoconductivity and is particularly useful as a semiconductor for solar cells. SiF 4 gas is introduced into a vacuum container evacuated to a high vacuum of 10 -5 Torr or less so as to have a partial pressure in the range of 5 × 10 -4 Torr to 1 × 10 -5 Torr, and the introduced gas and , silicon atoms generated by heating and evaporating silicon are collided with accelerated electrons to ionize or dissociate them, and high energy is imparted to the gas ions and silicon monatomic ions generated in this way by an electric field effect, and they are irradiated onto the substrate. The present invention resides in a method for manufacturing a thin film semiconductor, characterized in that a thin film made of amorphous silicon is formed. The method for manufacturing a thin film semiconductor of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram showing an example of a device for carrying out the method of the present invention, in which a vacuum chamber 2 in a vacuum chamber 1 is connected to an exhaust port 3 with an exhaust system device (oil rotary pump, oil diffusion pump, etc.). The vacuum chamber 2 is equipped with an electron beam evaporation source 4 (power supply (circuits etc. are not shown), baffle plate 5, loop-shaped gas introduction pipe 6, electron generator 7, substrate holder 8,
and a base material 9 attached thereto, and furthermore, outside the vacuum chamber 1, power supplies 10 to 12 and their circuits for operating the device, and a valve 14 connected to the loop gas introduction pipe 6 are installed. A cylinder 13 filled with SiF 4 gas and connected so as to be able to adjust its flow rate is installed. The base material 9 may be, for example, a polymeric material such as polyvinyl chloride, polyvinyl fluoride, cellulose acetate, polyethylene terephthalate, polybutylene terephthalate, polyethylene, polypropylene, polycarbonate, polyimide, polyether sulfone, polybalabanic acid, glass, Film-like or thin plate-like materials such as ceramic materials such as porcelain and earthenware, or metal materials such as aluminum and stainless steel may be used, and
Depending on the use of the base material on which the thin film semiconductor is provided based on the method of the present invention, the base material may be previously subjected to some kind of treatment. For example, when attempting to obtain a photovoltaic element from the base material, electrodes of the element are provided in advance by vapor deposition of a metal material, etc.
A thin film semiconductor can be formed thereon by the method of the present invention. Next, in order to manufacture a thin film semiconductor using the apparatus shown in FIG. 1, the substrate 9 is attached to the substrate holder 8 as shown in FIG. 1, and silicon is supplied to the crucible 41 of the electron beam evaporation source 4. Then, the exhaust port 3 is evacuated by the exhaust system, and the vacuum chamber is evacuated to a temperature of 1×10 -5 Torr, preferably higher than 1×10 -7 Torr. High vacuum and no,
Once the degree of vacuum has stabilized, open the loop gas introduction pipe 6.
While adjusting the valve 14, SiF 4 gas is introduced so that the partial pressure is in the range of 5×10 −4 Torr to 1×10 −5 Torr. Next, the electron beam evaporation source 4 is operated to vaporize the silicon in the crucible 41, and the atomic particles of silicon and the introduced SiF 4 gas are ionized by impact ionization or dissociation by high-speed electrons from the electron generator 7. let The electron generator 7 is composed of a filament 71, a mesh electrode 72, and a guard electrode 73, and in this embodiment, it is powered by a power source 11 at -400V.
The filament 71, which has been given a DC potential of , is heated by passing an alternating current of 30 A from the power source 10 to generate thermoelectrons, and by grounding the mesh electrode 72, the thermoelectrons are accelerated by an electric field to generate high-speed electrons. It is done as follows. A negative DC high voltage is applied to the base material holder 8 by the power supply 12 to impart high energy to the ionized SiF 4 ions and silicon monatomic ions, and the ions are caused to enter the surface of the base material 9 .
In this way, a thin film made of amorphous silicon, which is a thin film semiconductor, is formed on the base material 9. However, the high energy in the present invention includes kinetic energy ranging from 10eV to 8KeV at room temperature.
By injecting such high energy silicon ions and SiF 4 ions into the surface of the base material 9, it has the performance as a semiconductor and contains fluorine. An amorphous silicon thin film is formed. In addition, in the method of the present invention, in addition to heating and evaporating silicon alone, it is also possible to add other substances to the silicon. For example, it is possible to add other substances to silicon, such as boron, aluminum, gallium, etc. A p-type semiconductor can be obtained by mixing , and an n-type semiconductor can be obtained by mixing elements of the periodic table group such as phosphorus, arsenic, antimony, and bismuth. The method for manufacturing the thin film semiconductor of the present invention is as described above, and in particular, a method of ionizing silicon evaporated particles under high vacuum conditions, accelerating the ionized particles with an electric field, and making them impinge on the surface of a substrate to form a thin film. Since this is a method in which SiF 4 gas is present, the resulting amorphous silicon thin film contains fluorine and has excellent heat resistance, as well as excellent photoconductivity due to vapor deposition under high vacuum conditions. It becomes something. The present invention will be explained below based on examples. Example 1 Using the apparatus shown in FIG. 1, a high-purity silicon mass (99.9999% or more) was placed in a crucible 41, and a glass plate (7059 glass manufactured by Corning, USA) was used as the base material 9.
The substrate 9 was attached to the substrate holder 8 using a vacuum cleaner, the substrate 9 was kept at 350° C., and a 1.5 μm thick vapor deposited layer was formed on the surface of the substrate 9 under the following conditions. Pressure before introducing SiF 4 gas: 1 × 10 -7 Torr, SiF 4 gas partial pressure: 5 × 10 -5 Torr, thermionic acceleration conditions in electron generator 7: 400 V, ionization current in electron generator 7: 300 mA, Ion acceleration voltage applied to substrate holder 8: -
1.0 KW, and as a result of analyzing the thus obtained silicon thin film by power line diffraction, it was confirmed that it was amorphous. The properties of the thin film were investigated, as shown in the table below, and showed very excellent properties, and no change in properties was observed even after the thin film was kept at 600°C for 30 minutes in dry nitrogen. First, it had excellent heat resistance.
【表】【table】
第１図は本発明方法を実施するための装置の一
例を示す説明図である。
１……真空容器、２……真空室、３……排気
口、４……電子ビーム蒸発源、４１……ルツボ、
６……ループ状ガス導入管、７……電子発生装
置、８……基材ホルダー、９……基材、１０，１
１，１２……電源、１３……SiF4ガスボンベ、１
４……バルブ。
FIG. 1 is an explanatory diagram showing an example of an apparatus for carrying out the method of the present invention. 1... Vacuum container, 2... Vacuum chamber, 3... Exhaust port, 4... Electron beam evaporation source, 41... Crucible,
6...Loop-shaped gas introduction pipe, 7...Electron generator, 8...Substrate holder, 9...Base material, 10,1
1, 12...Power supply, 13...SiF 4 gas cylinder, 1
4...Valve.
Claims (1)
器内に、５×10-4トールから１×10-5トールの範
囲の分圧を有する様にSiF4ガスを導入し、該導入
ガスと、ケイ素を加熱蒸発させることにより生成
したケイ素単原子とに加速電子を衝突させて電離
若しくは解離させ、かくして生成したガスイオン
及びケイ素単原子イオンに電界効果により高エネ
ルギーを付与して基材上に射突させて非晶質シリ
コンからなる薄膜を形成することを特徴とする薄
膜半導体の製造方法。 ２ ガスイオン及びケイ素単原子イオンに付与さ
れる高エネルギーが10eVないし8KeVの範囲であ
る第１項記載の製造方法。[Claims] 1 SiF 4 gas is poured into a vacuum container evacuated to a high vacuum of 110 -5 Torr or less so as to have a partial pressure in the range of 5 x 10 -4 Torr to 1 x 10 -5 Torr. The introduced gas and silicon monoatomic atoms produced by heating and evaporating silicon are ionized or dissociated by colliding with accelerated electrons, and high energy is imparted to the gas ions and silicon monoatomic ions produced in this way by an electric field effect. 1. A method for producing a thin film semiconductor, which comprises applying and projecting onto a base material to form a thin film made of amorphous silicon. 2. The manufacturing method according to item 1, wherein the high energy imparted to the gas ions and silicon monatomic ions is in the range of 10 eV to 8 KeV.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118774A JPS599910A (en) | 1982-07-08 | 1982-07-08 | Manufacture of thin-film semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118774A JPS599910A (en) | 1982-07-08 | 1982-07-08 | Manufacture of thin-film semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599910A JPS599910A (en) | 1984-01-19 |
| JPS639743B2 true JPS639743B2 (en) | 1988-03-01 |
Family
ID=14744737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57118774A Granted JPS599910A (en) | 1982-07-08 | 1982-07-08 | Manufacture of thin-film semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599910A (en) |
-
1982
- 1982-07-08 JP JP57118774A patent/JPS599910A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS599910A (en) | 1984-01-19 |
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