JPS6390878A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPS6390878A JPS6390878A JP23600986A JP23600986A JPS6390878A JP S6390878 A JPS6390878 A JP S6390878A JP 23600986 A JP23600986 A JP 23600986A JP 23600986 A JP23600986 A JP 23600986A JP S6390878 A JPS6390878 A JP S6390878A
- Authority
- JP
- Japan
- Prior art keywords
- emitting layer
- light emitting
- light
- thin film
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 150000004770 chalcogenides Chemical class 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 238000003776 cleavage reaction Methods 0.000 claims 1
- 230000007017 scission Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 229910052771 Terbium Inorganic materials 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010979 ruby Substances 0.000 description 7
- 229910001750 ruby Inorganic materials 0.000 description 7
- 239000005083 Zinc sulfide Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野）
本発明は、レーザ装置に係り、特に発振源として発光中
心不純物を含む半導体膜を用いた小型の固体レーザに関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a laser device, and more particularly to a small solid-state laser using a semiconductor film containing an emission center impurity as an oscillation source.
（従来技術およびその問題点〕
レーザは、その直進性とコヒーレント性とからさまざま
な分野での利用が注目されている。(Prior Art and its Problems) Lasers are attracting attention for use in various fields because of their straightness and coherent properties.
レーザの発振源としては、いろいろなものが用いられる
が、例え、ばルビーを用いたルビーレーザは、第５図に
示す如くルビー棒１００の周りをらせん状のフラッシュ
ランプ１０１で囲み、フラッシュランプの点灯によって
ルビーに含まれるクロム原子が励起され光子の誘導放出
を生ぜしめるようにしたもので、ルビー棒の両端に形成
された外部ミラーによってビームを振動させ、その１部
を外部にとり出すように構成されている。Various types of laser oscillation sources are used, but for example, a ruby laser using a ruby is made by surrounding a ruby rod 100 with a spiral flash lamp 101 as shown in FIG. When lit, the chromium atoms contained in the ruby are excited, causing stimulated emission of photons.The beam is vibrated by external mirrors formed at both ends of the ruby rod, and a portion of it is taken out to the outside. has been done.
ところで、ルビーレーザでは、励起源としてフラッシュ
ランプ等のボンピング（注入）用ランプを使用している
。このため、直接変調を行うことはできず装置が大型化
してしまうという問題があった。By the way, a ruby laser uses a bombing (injection) lamp such as a flash lamp as an excitation source. For this reason, there is a problem in that direct modulation cannot be performed and the device becomes large in size.
また、反射鏡として外部ミラーを用いていることも装置
が大型となる原因の１つであった。Furthermore, the use of an external mirror as a reflecting mirror was also one of the reasons why the device became large.
ぞこて、装置の小型化を求めてさまざまな研究が進めら
れている。ｐｎ接合を用いた電流注入によって励起する
ようにした半導体レーザもその１つで、急速に開発が進
められているデバイスである。しかしながらｐｎ接合を
用いているため、接合面の形成あるいは後続工程におい
て良好に接合面を維持すること等いろいろな問題がある
。また、発光波長の選択にも制限がある。A variety of research efforts are underway to make devices more compact. One such device is a semiconductor laser that is excited by current injection using a pn junction, and is a device that is being rapidly developed. However, since a pn junction is used, there are various problems such as forming a bonding surface and maintaining the bonding surface well in subsequent steps. There are also restrictions on the selection of emission wavelengths.
本発明は、前記実情に鑑みてなされたもので更に小型で
かつ構造の簡単なレーザ装置を提供することを目的とす
る。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a laser device that is smaller and has a simpler structure.
（問題を解決するための手段〕
そこで本発明では、硫化亜鉛（ＺｎＳ）、硫化カルシウ
ム（Ｃａｂ）、硫化ストロンチウム（ＳｒＳ）等の半導
体からなる母材層中に発光中心となる不純物を注入して
なる発光層の相対向する２面を除いて他の面をこの発光
層よりも屈折率の小さい誘電体で囲み、この誘電体を介
して所望の電圧を印加し発光を生じしめるようにしてお
り、前記２面を反射面としてレーザ共撮が行なわれる。(Means for solving the problem) Therefore, in the present invention, an impurity that becomes a luminescence center is injected into a base material layer made of a semiconductor such as zinc sulfide (ZnS), calcium sulfide (Cab), or strontium sulfide (SrS). The light emitting layer is surrounded by a dielectric material having a refractive index smaller than that of the light emitting layer except for two facing surfaces, and a desired voltage is applied through this dielectric material to cause light emission. , laser co-photography is performed using the two surfaces as reflective surfaces.
このレーザ装置は、エレクトロルミネッセンス（ＥＬ）
現象を利用しており、発光原理は薄膜ＥＬ素子と全く同
一であり、構造が極めて簡単で小型化が可能である。ま
た反射ミラーを発光層の両端を鏡面加工することによっ
て構成すれば、外部ミラーの配設が不要となり大幅な小
型化が達成される。This laser device uses electroluminescence (EL)
The light emitting principle is exactly the same as that of a thin film EL element, and the structure is extremely simple and can be miniaturized. Further, if the reflecting mirror is constructed by mirror-finishing both ends of the light emitting layer, it becomes unnecessary to provide an external mirror, and a significant reduction in size can be achieved.
発光層についても、半導体レーザのように接合を形成す
る必要はなく、また必ずしも単結晶を用いる必要はない
ため製造が容易である。The light-emitting layer is also easy to manufacture because there is no need to form a junction unlike in a semiconductor laser, and there is no need to necessarily use a single crystal.
以下、本発明の実施例について、図面を参照しつつ詳細
に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は、本発明実施例の薄膜レーザの４１造を示す図
である。FIG. 1 is a diagram showing a structure 41 of a thin film laser according to an embodiment of the present invention.
この薄膜レーザは、ガラス基板１上に形成されたアルミ
ニウム薄膜からなる第１電極２と、同じくアルミニウム
薄膜のストライブ状パターンからなる第２電極３とによ
って、長手方向に沿う４面を酸化シリコン膜からなる誘
電体層／Ｉ （４ａ。This thin film laser has four longitudinal surfaces covered with a silicon oxide film by a first electrode 2 made of an aluminum thin film formed on a glass substrate 1 and a second electrode 3 made of a striped pattern of the aluminum thin film. Dielectric layer/I (4a.
４ｂ、４Ｃ，４ｄ）で覆われたＺｎＳ：１ｗｔ％Ｔｂ
（テルビウム）薄膜のストライブ状パターンからなる
発光層５を挟んだもので、該発光層５の両端部はガラス
基板１に対して垂直な端面を有しており、銀膜が塗布さ
れ、夫々全反射および半透明の鏡面６ａ、６ｂを構成し
、半透明の鏡面６ｂからレーザ光が出力せしめられるよ
うになっている。4b, 4C, 4d) ZnS covered with: 1 wt% Tb
A light-emitting layer 5 consisting of a striped pattern of (terbium) thin film is sandwiched between the light-emitting layer 5. Both ends of the light-emitting layer 5 have end faces perpendicular to the glass substrate 1, and are coated with a silver film, respectively. Total reflection and semi-transparent mirror surfaces 6a and 6b are configured, and laser light is output from the semi-transparent mirror surface 6b.
次にこの薄膜レーザの製造方法について説明する。Next, a method for manufacturing this thin film laser will be explained.
まず、第２図（ａ）に示す如く、ガラス基板１上に、電
子ビーム蒸着法によりアルミニウムｉＷＨからなる第１
電極２を形成する。First, as shown in FIG. 2(a), a first film made of aluminum iWH is deposited on a glass substrate 1 by electron beam evaporation.
Electrode 2 is formed.
次いで、第２図（ｂ）に示す如くスパッタリング法によ
り酸化シリコン膜を成摸し、下層側の誘電体４ａを形成
する。Next, as shown in FIG. 2(b), a silicon oxide film is formed by sputtering to form the lower dielectric 4a.
続いて、第２図［Ｃ）に示す如く、スパッタリング法に
よりＺｎＳ：１ｗｔ％Ｔｂ層を成映した後、フォトリソ
法を用いて、ストライブ状にバターニングし、発光層５
を形成する。Subsequently, as shown in FIG. 2 [C], a ZnS:1wt%Tb layer was formed by sputtering, and then patterned into stripes by photolithography to form the light emitting layer 5.
form.
そして第５図（ｄ）に示す如く、スパッタリングジ入に
より、前記発光層の側面および上面を覆うように酸化シ
リコン腹を成膜し、誘電体層４ｂ。Then, as shown in FIG. 5(d), a silicon oxide layer is formed by sputtering to cover the side and top surfaces of the light emitting layer, thereby forming a dielectric layer 4b.
４ｃ、４ｄを形成する。4c and 4d are formed.
この後、メタルマスクを介して、アルミニウム薄膜を電
子ビーム蒸着法によって成膜し第２電極３を形成する。Thereafter, a thin aluminum film is formed by electron beam evaporation through a metal mask to form the second electrode 3.
（第２図（ｅ））
そして、最後に、発光層５を積層面に対して垂直となる
ように切断し、切断面を鏡面研磨した後、銀膜を塗布し
、反射面としての鏡面６ａ、６ｂを形成して第１図に示
した薄膜レーザが完成する。(FIG. 2(e)) Finally, the light-emitting layer 5 is cut perpendicular to the laminated surface, the cut surface is mirror-polished, and a silver film is applied to form a mirror surface 6a as a reflective surface. , 6b are formed to complete the thin film laser shown in FIG.
この薄膜レーザは、構造が簡単で極めて小形（１０朋角
程度）であり、製造も容易で信頼性の高いものとなって
いる。This thin film laser has a simple structure, is extremely small (about 10 mm square), is easy to manufacture, and is highly reliable.
また、電気信号を直接光信号に変換することができ、周
辺回路も極めて簡単なものとなっている。Furthermore, electrical signals can be directly converted into optical signals, and the peripheral circuitry is extremely simple.
そして、出力信号の波長については、発光層の構成材料
を選択することにより、極めて自由に変化することが可
能である。The wavelength of the output signal can be changed extremely freely by selecting the constituent material of the light emitting layer.
次に、本発明の他の実施例について説明する。Next, other embodiments of the present invention will be described.
第３図は、発光層１５をガリウムヒ基
（ＧａＡｓ）ウェハ１１上に成膜したＺｎＳ：１ｗｔ％
Ｔｂ単結晶薄膜で構成すると共に、発光層の端面を勇界
した鏡面１６ａ、１６ｂで構成した薄膜レーザを示すも
のである。FIG. 3 shows a light-emitting layer 15 formed on a gallium arsenide (GaAs) wafer 11 using ZnS: 1wt%.
This figure shows a thin film laser made of a Tb single crystal thin film and made up of mirror surfaces 16a and 16b with rounded end faces of a light emitting layer.
このＷｊＷＡレーザでは、前記実施例のガラス基板１に
代えてＧａＡｓウェハ１１を用いており、第１電極１２
は、このＧａＡｓウェハ１１の裏面側に形成し、発光層
１５は側面および上面を酸化シリコン膜からなる誘電体
層１４ｂ、１４ｃ。In this WjWA laser, a GaAs wafer 11 is used in place of the glass substrate 1 of the above embodiment, and the first electrode 12
is formed on the back side of the GaAs wafer 11, and the light emitting layer 15 has side and top surfaces covered with dielectric layers 14b and 14c made of silicon oxide films.
１４ｄで囲まれており、この誘電体層の上層に形成され
たアルミニウムのストライブ状パターンからなる第２電
極１３と前記第１電極１２との間に電圧が印加され、発
光が生じこの光が鏡面１６ａ。When a voltage is applied between the first electrode 12 and the second electrode 13 made of an aluminum striped pattern formed on the upper layer of this dielectric layer, light is emitted. Mirror surface 16a.
１６ｂの間で共振せしめられとり出されるようになって
いる。16b and is caused to resonate and be extracted.
製造に際しては、次のような方法がとられる。The following method is used for manufacturing.
まずＧａＡｓウェハ１１上に、スパッタリング法によっ
てＺｎＳ：１ｗｔ％Ｔｂ層をエピタキシャルに成長せし
め、これをフォトリソ法によりバターニングする。（第
４図（ａ））
そして、この上層にスパッタリング法により酸化シリコ
ン膜を成膜し、誘電体層（１４ｂ。First, a ZnS:1 wt % Tb layer is epitaxially grown on the GaAs wafer 11 by sputtering, and this is patterned by photolithography. (FIG. 4(a)) Then, a silicon oxide film is formed on this upper layer by a sputtering method, and a dielectric layer (14b) is formed.
１４ｃ、１４ｄ）を形成する。（第４図（ｂ））この後
、この誘電体層上およびＧａＡＳウェハの裏面に、電子
ビーム蒸着法によりアルミニウム薄膜を成膜した後、誘
電体層側のみをストライブ状にバターニングし、第１お
よび第２電極１２゜１３を得る（第４図（Ｃ））
そして最後に、発光層の積層面に垂直となるように、両
端を切断し、この端面を鏡面加工し、銀膜を塗布して鏡
面１６ａ、１６ｂを得、第３図に示した７ｔ１１９レー
ザが完成する。ここで発光層は、単結晶薄膜であるため
、切断時に、舅界面に沿った断面を形成し、この面は良
好な反射面として動く。14c, 14d). (FIG. 4(b)) After that, a thin aluminum film was formed on the dielectric layer and on the back surface of the GaAS wafer by electron beam evaporation, and only the dielectric layer side was patterned into stripes. First and second electrodes 12° 13 are obtained (Fig. 4(C)).Finally, both ends are cut perpendicular to the laminated surface of the light emitting layer, the end faces are mirror-finished, and a silver film is formed. By coating mirror surfaces 16a and 16b, the 7t119 laser shown in FIG. 3 is completed. Here, since the light emitting layer is a single crystal thin film, when it is cut, it forms a cross section along the leg interface, and this surface acts as a good reflective surface.
なお、実施例では、発光層どしてＺ ｎ Ｓ ： Ｍ
ｎを用いたが、これに限定されることなく、Ｚｎｓ。In addition, in the example, the light emitting layer is Z n S : M
n, but is not limited to, Zns.
Ｃａｂ、ＳｒＳ等のカルコゲナイド系半導体等のの半導
体からなる発光母材中に、Ｔｂ、Ｔｌｌ１゜Ｓｌ等の希
土類元素Ｃｒ等の遷移金属元素あるいはこれらの化合物
からなる発光中心不純物を０．１〜１％程度添加したも
のから適宜選択して使用すれば、所望の発光波長のレー
ザ光を得ることができる。A luminescent center impurity consisting of a transition metal element such as a rare earth element Cr such as Tb, Tll1°Sl, or a compound thereof is added to a luminescent base material consisting of a semiconductor such as a chalcogenide semiconductor such as Cab or SrS, or a luminescent center impurity of 0.1 to 1%. By appropriately selecting and using those added with about 100%, laser light with a desired emission wavelength can be obtained.
また、誘電体層、電極、基板等の構成材料については実
施例に限定されることなく適宜変更可能である。Furthermore, the constituent materials of the dielectric layer, electrodes, substrate, etc. are not limited to the embodiments and can be changed as appropriate.
加えて、実施例では、反射鏡を、発光層の端面を鏡面加
工して構成したが、外部ミラーを設置してもよいことは
いうまでもない。In addition, in the embodiment, the reflecting mirror was constructed by mirror-finishing the end face of the light-emitting layer, but it goes without saying that an external mirror may be provided.
〔発明の効果］
以上説明してきたように、本発明によれば、母材として
の半導体中に発光中心となる不純物を添加してなる発光
層の相対向する２面を除く他の面をこの発光層よりも屈
折率の小さい誘電体で囲み、この誘電体を介して前記発
光層に所定の電圧を印加して発光せしめ、前記２面を反
射面としてレーザ共振を生ぜしめるようにしているため
、製造が容易で、小形のレーザ装置を提供することがで
きる。[Effects of the Invention] As described above, according to the present invention, the other surfaces of the light-emitting layer, which is formed by adding an impurity that becomes a light-emitting center into a semiconductor as a base material, are The light emitting layer is surrounded by a dielectric having a refractive index lower than that of the light emitting layer, and a predetermined voltage is applied to the light emitting layer through the dielectric to cause it to emit light, and the two surfaces are used as reflecting surfaces to cause laser resonance. , it is possible to provide a small laser device that is easy to manufacture.
第１図は、本３発明実施例のＲ９ｖレーザを示す図、第
２図（ａ）乃至（ｅ）は、第１図に示した薄膜レーザの
製造工程図、第３図は、本発明の他の実施例の薄膜レー
ザを示す図、第４図（ａ）乃至ｆｃ）は第３図に示した
薄膜レーザの製造工程図、第５図は従来の固体レーザを
示す図である。
１００・・・ルビー棒、１０１・・・フラッシュランプ
、１０２・・・外部ミラー、１・・・ガラス基板、２，
１２・・・第１電極、３．１３・・・第２電橿、４，１
４・・・誘電体層、５．１５−・・発光層、６ａ、６ｂ
、１６ａ。
１６ｂ・・・鏡面、１１・・・ＧａＡｓウェハ。
第１図
第２図（０）
第２図（ｂ）
第２図（Ｃ）
第２図（ｄ）
第２図（ｅ）FIG. 1 is a diagram showing the R9v laser according to the third embodiment of the present invention, FIGS. 2(a) to (e) are manufacturing process diagrams of the thin film laser shown in FIG. 1, and FIG. 3 is a diagram showing the R9v laser according to the third embodiment of the present invention. 4(a) to fc) are diagrams showing the manufacturing process of the thin film laser shown in FIG. 3, and FIG. 5 is a diagram showing a conventional solid-state laser. 100... Ruby rod, 101... Flash lamp, 102... External mirror, 1... Glass substrate, 2,
12...First electrode, 3.13...Second electric rod, 4,1
4... Dielectric layer, 5.15-... Light emitting layer, 6a, 6b
, 16a. 16b...Mirror surface, 11...GaAs wafer. Figure 1 Figure 2 (0) Figure 2 (b) Figure 2 (C) Figure 2 (d) Figure 2 (e)
Claims (6)
添加してなる発光層の相対向する２面を除く他の面をこ
の発光層よりも屈折率の小さい誘電体で囲み、 この誘電体を介して前記発光層に所定の電圧を印加し、
発光せしめ、 前記２面を反射面としてレーザ共振を生ぜしめるように
したことを特徴とするレーザ装置。(1) A light-emitting layer made by adding an impurity to become a light-emitting center into a semiconductor as a base material, and surrounding the other surfaces except two opposing faces with a dielectric material having a lower refractive index than that of the light-emitting layer; Applying a predetermined voltage to the light emitting layer through the body,
A laser device that emits light and causes laser resonance by using the two surfaces as reflective surfaces.
であることを特徴とする特許請求の範囲第（１）項記載
のレーザ装置。(2) The laser device according to claim (1), wherein the reflective surface is a mirror-finished end face of the light emitting layer.
元素又はその化合物を発光中心不純物として添加してな
る半導体薄膜からなることを特徴とする特許請求の範囲
第（１）項記載のレーザ装置。(3) The laser device according to claim (1), wherein the light-emitting layer is a semiconductor thin film formed by adding a rare earth element or a compound thereof as a luminescent center impurity to a chalcogenide semiconductor.
元素を発光中心不純物として添加してなる半導体薄膜か
らなることを特徴とする特許請求の範囲第（１）項記載
のレーザ装置。(4) The laser device according to claim (1), wherein the light-emitting layer is made of a semiconductor thin film formed by adding a transition metal element as a light-emitting center impurity to a chalcogenide semiconductor.
する特許請求の範囲第（３）項または第（４）項記載の
レーザ装置。(5) The laser device according to claim (3) or (4), wherein the semiconductor thin film is a single crystal thin film.
するようにしたことを特徴とする特許請求の範囲第（５
）項記載のレーザ装置。(6) The cleavage plane of the single crystal thin film constitutes the end face of the light emitting layer.
) The laser device described in section 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61236009A JP2521675B2 (en) | 1986-10-03 | 1986-10-03 | Laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61236009A JP2521675B2 (en) | 1986-10-03 | 1986-10-03 | Laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6390878A true JPS6390878A (en) | 1988-04-21 |
| JP2521675B2 JP2521675B2 (en) | 1996-08-07 |
Family
ID=16994429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61236009A Expired - Lifetime JP2521675B2 (en) | 1986-10-03 | 1986-10-03 | Laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2521675B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0351868A2 (en) * | 1988-07-21 | 1990-01-24 | Sharp Kabushiki Kaisha | Electroluminescent device of compound semiconductor |
| US6480516B1 (en) | 1999-03-31 | 2002-11-12 | Japan As Represented By Secretary Of Agency Of Industrial Science And Technology | Surface semiconductor optical amplifier with transparent substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749286A (en) * | 1980-09-10 | 1982-03-23 | Hitachi Ltd | Laser device |
-
1986
- 1986-10-03 JP JP61236009A patent/JP2521675B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749286A (en) * | 1980-09-10 | 1982-03-23 | Hitachi Ltd | Laser device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0351868A2 (en) * | 1988-07-21 | 1990-01-24 | Sharp Kabushiki Kaisha | Electroluminescent device of compound semiconductor |
| US6480516B1 (en) | 1999-03-31 | 2002-11-12 | Japan As Represented By Secretary Of Agency Of Industrial Science And Technology | Surface semiconductor optical amplifier with transparent substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2521675B2 (en) | 1996-08-07 |
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