JPS6385098U - - Google Patents

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Publication number
JPS6385098U
JPS6385098U JP17948586U JP17948586U JPS6385098U JP S6385098 U JPS6385098 U JP S6385098U JP 17948586 U JP17948586 U JP 17948586U JP 17948586 U JP17948586 U JP 17948586U JP S6385098 U JPS6385098 U JP S6385098U
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Japan
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Application number
JP17948586U
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English (en)
Japanese (ja)
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JPH0317678Y2 (enrdf_load_stackoverflow
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Priority to JP1986179485U priority Critical patent/JPH0317678Y2/ja
Publication of JPS6385098U publication Critical patent/JPS6385098U/ja
Application granted granted Critical
Publication of JPH0317678Y2 publication Critical patent/JPH0317678Y2/ja
Expired legal-status Critical Current

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  • Apparatuses For Bulk Treatment Of Fruits And Vegetables And Apparatuses For Preparing Feeds (AREA)
JP1986179485U 1986-11-20 1986-11-20 Expired JPH0317678Y2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986179485U JPH0317678Y2 (enrdf_load_stackoverflow) 1986-11-20 1986-11-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986179485U JPH0317678Y2 (enrdf_load_stackoverflow) 1986-11-20 1986-11-20

Publications (2)

Publication Number Publication Date
JPS6385098U true JPS6385098U (enrdf_load_stackoverflow) 1988-06-03
JPH0317678Y2 JPH0317678Y2 (enrdf_load_stackoverflow) 1991-04-15

Family

ID=31122590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986179485U Expired JPH0317678Y2 (enrdf_load_stackoverflow) 1986-11-20 1986-11-20

Country Status (1)

Country Link
JP (1) JPH0317678Y2 (enrdf_load_stackoverflow)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03175965A (ja) * 1989-12-04 1991-07-31 Uchiyama Shokai:Kk 長ネギの自動皮剥き装置
JPH0419194U (enrdf_load_stackoverflow) * 1990-06-07 1992-02-18
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005102593A (ja) * 2003-09-30 2005-04-21 Mitsubishi Agricult Mach Co Ltd 脱穀装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030956U (ja) * 1983-08-05 1985-03-02 富士電機株式会社 太陽熱集熱装置の集熱板支持装置
JPS60114696U (ja) * 1984-01-11 1985-08-02 株式会社　明治機械製作所 野菜仕上機における防音装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030956U (ja) * 1983-08-05 1985-03-02 富士電機株式会社 太陽熱集熱装置の集熱板支持装置
JPS60114696U (ja) * 1984-01-11 1985-08-02 株式会社　明治機械製作所 野菜仕上機における防音装置

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03175965A (ja) * 1989-12-04 1991-07-31 Uchiyama Shokai:Kk 長ネギの自動皮剥き装置
JPH0419194U (enrdf_load_stackoverflow) * 1990-06-07 1992-02-18
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Also Published As

Publication number Publication date
JPH0317678Y2 (enrdf_load_stackoverflow) 1991-04-15

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