JPS6384185A - Semiconductor laser module with optical isolator - Google Patents

Semiconductor laser module with optical isolator

Info

Publication number
JPS6384185A
JPS6384185A JP23037086A JP23037086A JPS6384185A JP S6384185 A JPS6384185 A JP S6384185A JP 23037086 A JP23037086 A JP 23037086A JP 23037086 A JP23037086 A JP 23037086A JP S6384185 A JPS6384185 A JP S6384185A
Authority
JP
Japan
Prior art keywords
light
semiconductor laser
crystal
reflected
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23037086A
Other languages
Japanese (ja)
Inventor
Kaoru Matsuda
薫 松田
Osamu Kamata
修 鎌田
Satoshi Ishizuka
石塚 訓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23037086A priority Critical patent/JPS6384185A/en
Publication of JPS6384185A publication Critical patent/JPS6384185A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a highly reliable, stable power source, by using a magnetooptic crystal for the material of the light emitting window of an airtight sealing cap, and arranging the end surface of the crystal at a specified slant angle with respect to the emitting light from a semiconductor laser element. CONSTITUTION:The end surface of a magnetooptic crystal 5 is arranged at a specified slant angle with respect to emitting light from a semiconductor laser element 1. The emitting light from the element 1 is emitted through the light emitting window of a cap 11. Thereafter, the light is coupled with optical fiber 7 through a lens 2 and an analyzer 6. As reflected returning light to the element 1, only the light reflected at the end surface of the magnetooptic crystal 5, which is used for the material of the window, on the side of the semiconductor element is considered. Then the reflected returning light can be made very little. Only the light having the extinction ratio of the magnetooptic element of, e.g., -40 dB, is returned to the element 1, with respect to the light, which is reflected by optical parts such as the lens and the like that are located at points further than the crystal 5 from the element 1. Since a semiconductor laser module having an optical isolator is sealed in an airtight manner in this way, high reliability is obtained.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光通信、光計測、光記録等の光源に用いる光ア
イソレータ付半導体レーザモジュールに関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor laser module with an optical isolator used as a light source for optical communication, optical measurement, optical recording, etc.

従来の技術 従来の光アインレータ付半導体レーザモジュールは特開
昭61−132925号公報等があるが、第2図に示す
様に半導体レーザ素子1から出射した光は次にレンズ2
によって集光されてから、偏光子4.磁気光学結晶5お
よび検光子6を通過して光ファイバ7へと結合されてい
た。また昭和57年電子通信学会総合全国大会2322
に発表された光アイソレータ付半導体レーザモジュール
は磁気光学結晶を球状に加工してレンズ機能をもたせた
ものを用いたものであった。
2. Description of the Related Art A conventional semiconductor laser module with an optical inulator is disclosed in Japanese Patent Application Laid-Open No. 132925/1983. As shown in FIG.
After the light is focused by the polarizer 4. It passed through a magneto-optic crystal 5 and an analyzer 6 and was coupled to an optical fiber 7. Also, 1981 IEICE General National Conference 2322
The semiconductor laser module with an optical isolator announced in 2003 used a magneto-optic crystal that was processed into a spherical shape and had a lens function.

また、従来半導体レーザ素子は端面劣化を防ぐため、N
2ガスで気密封止して用いていた。
In addition, in conventional semiconductor laser devices, in order to prevent end face deterioration, N
It was used in an airtight seal with two gases.

発明が解決しようとする問題点 光アイソレータは磁気光学結晶通過後の光部品端やコネ
クタ端等からの反射光が半導体レーザ素子に戻ることを
阻止するものであるが、磁気光学結晶の端面や磁気光学
結晶よりも半導体レーザ素子側にレンズ等の光部品があ
る場合は、光部品の端面からの近端反射が半導体レーザ
素子に戻り、半導体レーザ素子の雑音の原因となり発振
特性が劣化することがあった。そのうえ、さらに一般に
半導体レーザ素子は高信頼性を保つためN2ガスを充て
んし気密封止しているので、たとえ磁気光学結晶にレン
ズ機能をもたせてもそれより半導体レーザ素子側にある
その気密封止用キャップの光出射窓の裏表両端面からの
反射光が半導体レーザ索子に戻り、雑音を引きおこし、
伝送特注の劣化することがあった。
Problems to be Solved by the Invention Optical isolators are intended to prevent reflected light from the ends of optical components, connectors, etc. after passing through the magneto-optic crystal from returning to the semiconductor laser element. If there is an optical component such as a lens closer to the semiconductor laser element than the optical crystal, near-end reflection from the end face of the optical component may return to the semiconductor laser element, causing noise in the semiconductor laser element and deteriorating the oscillation characteristics. there were. Furthermore, in order to maintain high reliability, semiconductor laser devices are generally filled with N2 gas and hermetically sealed, so even if the magneto-optic crystal has a lens function, the hermetic seal on the side of the semiconductor laser device is The reflected light from both the front and back end faces of the light exit window of the cap returns to the semiconductor laser probe, causing noise.
The custom-made transmission sometimes deteriorated.

問題点を解決するための手段 本発明は上記問題点、半導体レーザ素子への近端反射戻
り光を最少におさえるべく、半導体レーザ素子の光出射
端から出射した光が最初に磁気光学結晶に入射すること
を特徴とする光アイソレータ付半導体レーザモジュール
を得るものである。
Means for Solving the Problems The present invention solves the above problems and solves the above problems by minimizing the near-end reflected return light to the semiconductor laser device, in which the light emitted from the light emitting end of the semiconductor laser device first enters the magneto-optic crystal. A semiconductor laser module with an optical isolator is obtained.

作用 本発明の光アイソレータ付LDモジュールを用いれば、
半導体レーザ素子からの出射光は最初に磁気光学結晶に
入射するため、磁気光学結晶通過後の光部品の端面から
の反射光は半導体レーザ素子へは戻らない。この構成で
半導体レーザ素子へ戻りつる反射光は磁気光学結晶の半
導体レーザ素子側の端面のみであり、本発明によれば、
半導体レーザ素子からの出射光に対して磁気光学結晶の
端面が傾いているため、前記端面での反射光も半導体レ
ーザに戻ることはない。従って、低雑音で発振特性の良
好なモジュールが得られる。また、半導体レーザ素子を
気密封止しているために半導体レーザ素子の信頼性も高
い。
Function: If the LD module with optical isolator of the present invention is used,
Since the light emitted from the semiconductor laser element first enters the magneto-optic crystal, the light reflected from the end face of the optical component after passing through the magneto-optic crystal does not return to the semiconductor laser element. With this configuration, the reflected light that returns to the semiconductor laser element is only from the end face of the magneto-optic crystal on the semiconductor laser element side, and according to the present invention,
Since the end face of the magneto-optic crystal is inclined with respect to the light emitted from the semiconductor laser element, the light reflected from the end face does not return to the semiconductor laser. Therefore, a module with low noise and good oscillation characteristics can be obtained. Furthermore, since the semiconductor laser element is hermetically sealed, the reliability of the semiconductor laser element is also high.

実施例 本発明の実施例の構成図を第1図に示す。気密封止キャ
ップ11の光出射窓の窓材に磁気光学結晶6を用い念も
ので、半導体レーザ素子1からの出射光に対して磁気光
学結晶6の端面ば8°傾けて配しである。半導体レーザ
素子1からの出射光はキャップ11の光出射窓から出射
した後レンズ2、検光子6を通って光ファイバ了に結合
される。
Embodiment A block diagram of an embodiment of the present invention is shown in FIG. The magneto-optic crystal 6 is used as the window material for the light exit window of the hermetic sealing cap 11, and the end face of the magneto-optic crystal 6 is inclined by 8 degrees with respect to the light emitted from the semiconductor laser element 1. The emitted light from the semiconductor laser element 1 is emitted from the light exit window of the cap 11, passes through the lens 2 and the analyzer 6, and is coupled to the optical fiber.

本実施例の光アイソレータ付半導体レーザモジュールを
用いれば、半導体レーザ素子への反射戻り光としては、
窓材に用いた磁気光学結晶5の半導体レーザ素子側の端
面での反射光だけを考慮すればよく、磁気光学結晶とし
て屈折率が2.3の(BiLuGd)5 Fe50,2
を用いた場合、端面に反射防止膜をほどこさなくても半
導体レーザ素子と窓端面距離を約100μmにすれば反
射戻り光は一110dB、さらに反射防止膜をほどこせ
ば半導体レーザ素子と窓端面距離を同距離にした場合で
も反射戻り光は一125dBと非常に少ない値であった
If the semiconductor laser module with optical isolator of this example is used, the reflected light returning to the semiconductor laser element will be:
It is only necessary to consider the reflected light at the end face of the magneto-optic crystal 5 used as the window material on the semiconductor laser element side, and (BiLuGd)5Fe50,2 with a refractive index of 2.3 is used as the magneto-optic crystal.
When using an anti-reflection film, if the distance between the semiconductor laser element and the window end face is approximately 100 μm, the reflected return light will be -110 dB, and if an anti-reflection film is further applied, the distance between the semiconductor laser element and the window end face will be -1110 dB. Even when the distances were the same, the reflected return light was -125 dB, which was a very small value.

実際には半導体レーザ素子と窓端面距離はもっと長く約
30071m であるため、反射戻り光は無視できる値
であった。磁気光学結晶6より半導体レーザ素子1から
遠くにあるレンズ等の光学部品からの反射光は磁気光学
素子の消光比−40dBしか半導体レーザ素子には戻ら
ない。また本実施例の光アインレータ付半導体レーザモ
ジュールは気密封止されているため、高信頼性が得られ
る。
In reality, the distance between the semiconductor laser element and the window end face is much longer, about 30,071 m, so the reflected return light was a negligible value. The reflected light from an optical component such as a lens which is located farther from the semiconductor laser element 1 than the magneto-optic crystal 6 returns to the semiconductor laser element only at an extinction ratio of -40 dB of the magneto-optic element. Furthermore, since the semiconductor laser module with optical inulator of this embodiment is hermetically sealed, high reliability can be obtained.

従って本実施例によれば、反射戻り光による雑音の非常
に少なく、高信頼性の安定な光源が得られた。
Therefore, according to this example, a highly reliable and stable light source with very little noise due to reflected return light was obtained.

なお、本発明は本実施例に示した様に気密封止キャップ
の窓材に磁気光学結晶を用いたもののみを示すのではな
く、半導体レーザ素子からの出射光が最初に磁気光学結
晶に入射する構成であればどの様な構成でもよい。また
、磁気光学結晶もいかなる材料、いかなる形状でもよく
、例えば導波路を形成してもよい。
Note that the present invention does not only refer to a case where a magneto-optic crystal is used as the window material of the hermetic sealing cap as shown in this embodiment, but also to a case where the emitted light from a semiconductor laser element first enters the magneto-optic crystal. Any configuration may be used as long as it does so. Further, the magneto-optic crystal may be made of any material and may have any shape, and may form a waveguide, for example.

発明の効果 本発明によれば、反射戻り光による雑音が非常に少なく
、高信頼性の安定な光源が得られた。
Effects of the Invention According to the present invention, a highly reliable and stable light source with very little noise due to reflected return light was obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の光アインレータ付半導体レ
ーザモジュールの構成図、第2図は従来の同モジュール
の構成図である。 1・・・・・・半導体レーザ素子、2・・・・・・レン
ズ、5・・・・・・磁気光学結晶、7・・・・・・光フ
ァイバ。
FIG. 1 is a block diagram of a semiconductor laser module with an optical isolator according to an embodiment of the present invention, and FIG. 2 is a block diagram of a conventional module. DESCRIPTION OF SYMBOLS 1... Semiconductor laser element, 2... Lens, 5... Magneto-optic crystal, 7... Optical fiber.

Claims (3)

【特許請求の範囲】[Claims] (1)半導体レーザ素子の光出射端から出射した光が最
初に磁気光学結晶に入射することを特徴とする光アイソ
レータ付半導体レーザモジュール。
(1) A semiconductor laser module with an optical isolator, characterized in that light emitted from a light emitting end of a semiconductor laser element first enters a magneto-optic crystal.
(2)半導体レーザ素子が気密封止されている特許請求
の範囲第1項記載の光アイソレータ付半導体レーザモジ
ュール。
(2) A semiconductor laser module with an optical isolator according to claim 1, wherein the semiconductor laser element is hermetically sealed.
(3)磁気光学結晶の入射面が半導体レーザ素子からの
出射光に対して傾けて配した特許請求の範囲第1項記載
の光アイソレータ付半導体レーザモジュール。
(3) A semiconductor laser module with an optical isolator according to claim 1, wherein the entrance surface of the magneto-optic crystal is arranged at an angle with respect to the light emitted from the semiconductor laser element.
JP23037086A 1986-09-29 1986-09-29 Semiconductor laser module with optical isolator Pending JPS6384185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23037086A JPS6384185A (en) 1986-09-29 1986-09-29 Semiconductor laser module with optical isolator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23037086A JPS6384185A (en) 1986-09-29 1986-09-29 Semiconductor laser module with optical isolator

Publications (1)

Publication Number Publication Date
JPS6384185A true JPS6384185A (en) 1988-04-14

Family

ID=16906795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23037086A Pending JPS6384185A (en) 1986-09-29 1986-09-29 Semiconductor laser module with optical isolator

Country Status (1)

Country Link
JP (1) JPS6384185A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273683A (en) * 1988-09-09 1990-03-13 Nec Corp Semiconductor laser module
JPH02212806A (en) * 1988-12-09 1990-08-24 Alcatel Cit Optical head with isolator for coupling semiconductor laser to photoconductor
JPH036076A (en) * 1989-06-02 1991-01-11 Tokin Corp Semiconductor laser device
US5020065A (en) * 1989-09-05 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273683A (en) * 1988-09-09 1990-03-13 Nec Corp Semiconductor laser module
JPH02212806A (en) * 1988-12-09 1990-08-24 Alcatel Cit Optical head with isolator for coupling semiconductor laser to photoconductor
JPH036076A (en) * 1989-06-02 1991-01-11 Tokin Corp Semiconductor laser device
US5020065A (en) * 1989-09-05 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device

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