JPS6381967A - Lead frame preventive of falling of lead - Google Patents

Lead frame preventive of falling of lead

Info

Publication number
JPS6381967A
JPS6381967A JP22602186A JP22602186A JPS6381967A JP S6381967 A JPS6381967 A JP S6381967A JP 22602186 A JP22602186 A JP 22602186A JP 22602186 A JP22602186 A JP 22602186A JP S6381967 A JPS6381967 A JP S6381967A
Authority
JP
Japan
Prior art keywords
lead
width
cross
outer lead
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22602186A
Other languages
Japanese (ja)
Inventor
Akira Ozaki
彰 尾崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP22602186A priority Critical patent/JPS6381967A/en
Publication of JPS6381967A publication Critical patent/JPS6381967A/en
Pending legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the falling of an outer lead, and to form the outer lead resulting in no difficulty for mounting by setting the width of an upper surface and the width of a lower surface so that these width differs without setting them at an equal value as seen in conventional devices in the cross section of the outer lead on photoetching. CONSTITUTION:A lead frame material 2 is masked in a manner that the width of a lower-surface photo-mask 4 is made wider than an upper-surface photo- mask 3 in the lead frame material 2 on patterning through photoetching. Consequently, an outer lead 1 with a trapezoidal cross section is obtained. Bending moment at the time of cutting molding is halved to the case by conventional lead frames with parallelogram outer lead sections, thus preventing the falling of the lead 1. Even when the photo-mask 3 as an upper surface is 'displaced' to the left side on photoetching, the outer lead 1 with a cross section close to a trapezoid is acquired, and bending moment at the time of the cutting molding of the outer lead 1 is made smaller than conventional lead frames with the parallelogram cross sections, thus reducing the falling of the lead.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、リード倒れを防止したリードフレームに関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame that prevents leads from collapsing.

〔従来の技術〕[Conventional technology]

半導体装置のパッケージに際し、リードフレームが使用
され℃いる。リードフレームは、一般に、金属箔などの
導電性材料を所定の形状にフォトエツチングあるいはプ
レス加工して、ワイヤボンディング部や外部リード(ア
ウターリード)部や連結部などから成るパターニングを
行ない、いわゆるリボン状に構成される。このリードフ
レームK、ベレントマウント部(セラミックペース)を
装着し、ベレットポンディング、ワイヤボンディング後
封止し、リードの連結部分を切り離すリード切断分離工
程などを経てアウターリードが外部に引き出しされた半
導体装置が得られる。従来、上記リードフレーム材の上
下面にそれぞれフォトマスクを重ね、露光させ、フォト
エツチングによりアウターリードをパターニングするに
、当該アウターリードの横断面における上面の幅と下面
の幅とは等しいようにパターニングするのが一般である
Lead frames are used when packaging semiconductor devices. Lead frames are generally made by photo-etching or pressing a conductive material such as metal foil into a predetermined shape and patterning it into a so-called ribbon-like shape, which consists of wire bonding parts, external leads, connecting parts, etc. It is composed of This lead frame K is equipped with a berent mount (ceramic paste), sealed after belet bonding and wire bonding, and a semiconductor whose outer leads are drawn out through a lead cutting and separation process in which the connected parts of the leads are separated. A device is obtained. Conventionally, when outer leads are patterned by stacking photomasks on the upper and lower surfaces of the lead frame material, exposing them to light, and photoetching, the outer leads are patterned so that the width of the upper surface and the width of the lower surface in the cross section are equal. This is common.

なお、リードフレームについて記載した文献や特許の例
としては、工業調査会発行「を子材料」1982年8月
号p69〜74、同1984年8月号p6ε〜73およ
び特開昭51−112273号公報などかあげられる。
Examples of documents and patents describing lead frames include "Oko Materials" August 1982 issue, pages 69-74, August 1984 issue, pages 6ε-73, and Japanese Patent Application Laid-Open No. 112273/1984, published by Kogyo Research Association. I can give you things like public notices.

〔発」)f」が解決しようとする問題点〕しかるに、こ
のような横断面における上下面の幅が等しいように設定
してフォトエツチングを行なう場合、上下面のフォトマ
スクにずれを生じないときはよいが、かかる上下面のフ
ォトマスクにずれを生じた場合には、その後のリード切
断分離による半導体装置の外部に引き出しされたアウタ
ーリードは斜めに倒れた形(リード倒れ)になり、半導
体装置をプリント基板などの実装用基板に実装すること
を困難にしたりてる。
[Problem that is intended to be solved by ``f''] However, when performing photoetching with the widths of the upper and lower surfaces in such a cross section set to be equal, if no misalignment occurs between the photomasks on the upper and lower surfaces. However, if the photomasks on the upper and lower surfaces are misaligned, the outer leads pulled out to the outside of the semiconductor device by subsequent lead cutting and separation will fall diagonally (lead collapse), and the semiconductor device This makes it difficult to mount the device on a mounting board such as a printed circuit board.

かかるリード倒れは、リードが微細化される程顕著とな
る。
Such lead collapse becomes more noticeable as the leads become finer.

本発明はかかるリード倒れを防止したリードフレームを
提供し、実装に困難をきたさないような外部リードをも
つ半導体装置を提供することを目的とする。
An object of the present invention is to provide a lead frame that prevents such lead collapse, and to provide a semiconductor device having external leads that do not cause difficulties in mounting.

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。
The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

本願において開示される発明のうち代表的なもののζ弐
要を簡単に説明すれば、下記のとおりである。
A brief explanation of two representative inventions among the inventions disclosed in this application is as follows.

本ざ6明では、フォトエツチング際のアウターリードの
横断面においてその上面の幅とその下面の幅とを従来の
ように等しく設定しないでこれらが異なるように設定し
フォトエツチングを行なう。
In the sixth step, the width of the upper surface and the width of the lower surface of the cross section of the outer lead during photoetching are not set equal as in the conventional method, but are set to be different, and photoetching is performed.

〔作用〕[Effect]

これにより、従来の上記のように設定し、フォトエツチ
ングの際に上下のフォトマスクがずれた場合の平行四辺
形に対し、本発明の場合には台形またはこれに近い形の
ものになり、リード切断分離の際平行四辺形のものに比
してそれが台形またはこれに近い場合には、切断成形時
に発生する曲げモーメント(横方向におけるモーメント
)が低減され、リード倒れを防止できる。
As a result, compared to the conventional parallelogram when the upper and lower photomasks are misaligned during photoetching when set as described above, the present invention becomes a trapezoid or a shape close to this, and the lead When cutting and separating, if the shape is a trapezoid or close to it, compared to a parallelogram, the bending moment (moment in the lateral direction) generated during cutting and forming is reduced, and lead collapse can be prevented.

〔実施例〕〔Example〕

次に、本発明を図面に示す実施例に基づいて説明する。 Next, the present invention will be explained based on embodiments shown in the drawings.

vJd A図〜第4C図に示すように、アウターリード
(1)の横断面においてその上面の幅Xとその下面の幅
Yとが等しいものを得ようとしてその様にこれら幅X、
Yを設定し、それに伴ない、第4A図に示すようにリー
ドフレーム材(2)の上下面にそれぞれ上面フォトマス
ク(3)および下面フォトマスク(4)を重ね、露光し
てフォトエツチングを行なう場合、これら上面フォトマ
スク(3)と下面フォトマスク(4)との間に1ずれ”
がない場合には@4B図に示すような長方形状の横断面
のアウターリード(1)が得られ、該アウターリード(
1)断面を有するリードフレーム(5)を用いた半導体
装置(6)におけるアウターリード(1)にはリード倒
れはほとんどない(第4C図)。
vJd As shown in Figures A to 4C, in order to obtain a cross section of the outer lead (1) in which the width X of the upper surface and the width Y of the lower surface are equal, these widths X,
Y is set, and accordingly, as shown in Figure 4A, an upper photomask (3) and a lower photomask (4) are stacked on the upper and lower surfaces of the lead frame material (2), respectively, and exposed to light to perform photoetching. In this case, there is a deviation of 1 between the upper photomask (3) and the lower photomask (4).
If there is no outer lead (1), the outer lead (1) has a rectangular cross section as shown in Figure @4B.
1) There is almost no lead collapse in the outer leads (1) of a semiconductor device (6) using a lead frame (5) having a cross section (FIG. 4C).

しかるに、第5A図に示すように、上記において上面フ
ォトマスク(3)と下面フォトマスク(4)との間に1
ずれ”を生じた場合(一般にずれを生じ易い)には、第
5B図に示すような平行四辺形に構成された横断面形状
を有するアウターリード(1)が得られ、当該平行四辺
形の場合のリードフレームを用い、ペレット装着後、リ
ードの切断分離を行なうと横方向の曲げモーメントが大
となり、第5C図に示すように、アウターリード(1)
が斜めに倒伏したリード倒れが生じ、当該半導体装置(
6)はプリント基板(図示せず)への面装着実装を困難
ならしめる。
However, as shown in FIG. 5A, in the above, there is a gap between the upper photomask (3) and the lower photomask (4).
If "misalignment" occurs (generally misalignment is likely to occur), an outer lead (1) having a parallelogram cross-sectional shape as shown in FIG. 5B is obtained; When cutting and separating the leads after loading the pellet using a lead frame, the lateral bending moment becomes large, and as shown in Figure 5C, the outer lead (1)
The lead falls down diagonally, causing the semiconductor device (
6) makes surface mounting on a printed circuit board (not shown) difficult.

そこで、本発明では、第1A図〜第3B図に示すように
、アウターリード(1)の横断面におけるその上面の幅
Xとその下面の幅Yとを異なったものに設定し、フォト
エツチングを実施例する。
Therefore, in the present invention, as shown in FIGS. 1A to 3B, the width X of the upper surface and the width Y of the lower surface in the cross section of the outer lead (1) are set to be different, and photoetching is performed. I will give an example.

ilA図〜第1B図に示す実施例について説明すると、
第1B図に示すように上面幅Xよりも下面幅Yが大とな
るようなアウターリード(11を得べくフォトエツチン
グを設定しているので、その様に%具体的には第1A図
に示すように、フォトエツチングによるバターニングに
際し、リードフレーム材(2)の上面フォトマスク(3
)よりも下面フォトマスク(4)の方が幅広(当該リー
ドフレーム材(2)をマスクするようにする。これによ
り、第1B図に示1゛。【うな台形の横断面を有するア
ウターリード(1)か得られる。
To explain the embodiment shown in Figure ilA to Figure 1B,
As shown in Figure 1B, the photo-etching is set to obtain an outer lead (11) in which the bottom width Y is larger than the top width X, so the percentage is as shown in Figure 1A. When patterning by photoetching, the top photomask (3) of the lead frame material (2) is
) The lower photomask (4) is wider than the lead frame material (2) (to mask the lead frame material (2). As shown in FIG. 1) can be obtained.

な76、当該横断面とは、第4C図に示すI−I線で切
断した断面をいう。
76, the cross section refers to a cross section cut along the line II shown in FIG. 4C.

このような台形形状のアウターリードをもつリードフレ
ームを用いて半導体装置を構成する際のリニド切断分離
におい工、従来の第5B図に示すような平行四辺形のア
ウターリード断面をもつリードフレームによる場合に比
して、切断成形時の曲げモーメントは例えば1/2にな
り、第5C図のごときリード倒れが防止される。
A linide cutting and separation process is performed when a semiconductor device is constructed using a lead frame having such a trapezoidal outer lead, and when using a conventional lead frame having a parallelogram outer lead cross section as shown in FIG. 5B. Compared to this, the bending moment during cutting and forming becomes, for example, 1/2, thereby preventing the lead from collapsing as shown in FIG. 5C.

そし℃、第1A図に示すようなフォトエツチング時(、
例えば第2A図く示すよ5に、上面のフォトマスク(3
)が左側に@ずれ”だとしても、第2B図に示すように
、台形に近い横断面を有するアウターリード(1)が得
られ、このものも従来の平行四辺形の横断面のものに比
して、切断成形時の曲げモーメントが小さくなり、リー
ド倒れが低減される。同様の原理から、第3A図〜第3
B図に示すように、上面の幅が下面の幅が大の台形に近
い形態のものとしてもよい。
℃, during photoetching as shown in Figure 1A (,
For example, as shown in Figure 2A, at 5, the upper photomask (3
) is shifted to the left side, as shown in Figure 2B, an outer lead (1) with a cross section close to a trapezoid is obtained, which is also compared to the conventional parallelogram cross section. As a result, the bending moment during cutting and forming is reduced, and lead collapse is reduced. Based on the same principle, Figures 3A to 3
As shown in Figure B, the shape may be similar to a trapezoid, with the width of the upper surface being larger and the width of the lower surface being larger.

第6図は本発明のリードフレームを好適に使用できる半
導体装置の一例を示したもので、当該装置(6)は、四
方向にアウターリード(1)を引き出ししたフラットパ
ッケージに構成されている。
FIG. 6 shows an example of a semiconductor device in which the lead frame of the present invention can be suitably used, and the device (6) is constructed as a flat package with outer leads (1) drawn out in four directions.

第7図は当該フラットパッケージ(6)におけるリード
フレーム(5)の平面図を模式的に示したものである。
FIG. 7 schematically shows a plan view of the lead frame (5) in the flat package (6).

なお、第6図にて、(力はセラミック基鈑、(8)はヒ
ートシンク、(9)はキャップを示し、図示していない
が当該キャップ(9)内には半導体素子が収納されてい
る。
In FIG. 6, (1) is a ceramic substrate, (8) is a heat sink, and (9) is a cap. Although not shown, a semiconductor element is housed in the cap (9).

以上本発明者によっ℃なされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に1心電され
るものではなく、その要旨を逸脱しない範囲で種々変更
可能であることはいうまでもない、1 本発明のリードフレームはフラットパッケージ以外の他
の半導体装置にも適用することができる。
Although the invention made by the present inventor has been specifically explained based on examples, the present invention is not limited to the above-mentioned examples, and various modifications can be made without departing from the gist thereof. Needless to say, 1. The lead frame of the present invention can be applied to semiconductor devices other than flat packages.

また、プレス加工によるパターニングを行なうリードフ
レームにも適用される。
It is also applied to lead frames that are patterned by press working.

〔発明の効果〕〔Effect of the invention〕

本aにおいて開示される発明のうち代表的なものにより
℃得られる効果を簡単に説明すれば、下記のとおりであ
る。
A brief explanation of the effects obtained by typical inventions disclosed in this section (a) is as follows.

本発明によれば、リード倒れの防止されたリードフレー
ムを提供することができ、実装に困難をきたさないアウ
ターリードを有する半導体装置を得ることができた。
According to the present invention, it was possible to provide a lead frame in which lead collapse was prevented, and it was possible to obtain a semiconductor device having outer leads that did not cause difficulties in mounting.

【図面の簡単な説明】[Brief explanation of the drawing]

FIA図および第1B図はそれぞれ本発明の実施例を示
す要部断面図、 @2人図および!2B図はそれぞれ本発明の他の実施例
を示す要部断面図、 第3A図および第3B図はそれぞれ本発明のさらに他の
実施例を示す要部断面図、 第4A図〜第4B図はそれぞれ従来例を示す要部断面図
、 第4C図はリード倒れのない半導体装置の説明図、 第5A図および第5B図はそれぞれ従来例を示す要部断
面図、 @5C図はリード倒れを生じた半導体装置の説明図、 第6図は本発明の実施例を示す半導体装置の全朱棒成図
、 都7図は本発明の実施例を示す斜視図である。 1・・・アウターリード、2・・・リードフレーム材、
3・・・上面フォトマスク、4・・・下面フォトマスク
、5・・・リードフレーム、6・・・半導体装置、7・
・・セラミックベース、8・・・ヒートシンク、9・・
・鋼スタット、10・・・セラミックキャップ。 第413図    第45図 第  6  図
The FIA diagram and Figure 1B are a cross-sectional view of the main part showing an embodiment of the present invention, @two-person diagram, and ! 2B is a cross-sectional view of a main part showing other embodiments of the present invention, FIGS. 3A and 3B are cross-sectional views of main parts showing still other embodiments of the present invention, and FIGS. 4A to 4B are FIG. 4C is an explanatory diagram of a semiconductor device without lead collapse. FIGS. 5A and 5B are sectional views of essential parts each showing a conventional example. @5C is an explanatory diagram of a semiconductor device with lead collapse. FIG. 6 is an explanatory diagram of a semiconductor device according to an embodiment of the present invention; FIG. 6 is a full red outline diagram of a semiconductor device showing an embodiment of the present invention; FIG. 7 is a perspective view showing an embodiment of the present invention. 1... Outer lead, 2... Lead frame material,
3... Top photomask, 4... Bottom photomask, 5... Lead frame, 6... Semiconductor device, 7...
...Ceramic base, 8...Heat sink, 9...
・Steel stud, 10...ceramic cap. Figure 413 Figure 45 Figure 6

Claims (1)

【特許請求の範囲】 1、リード切断分離前のアウターリードの横断面におい
て、その上面の幅とその下面の幅とが異なったものであ
ることを特徴とするリード倒れを防止したリードフレー
ム。 2、リードフレームが、フォトエッチングによるパター
ニングを行なった、フラットパッケージ用リードフレー
ムである、特許請求の範囲第1項記載のリードフレーム
[Claims] 1. A lead frame that prevents leads from collapsing, characterized in that the width of the upper surface and the width of the lower surface of the outer leads are different in the cross section of the outer leads before the leads are cut and separated. 2. The lead frame according to claim 1, wherein the lead frame is a flat package lead frame patterned by photo-etching.
JP22602186A 1986-09-26 1986-09-26 Lead frame preventive of falling of lead Pending JPS6381967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22602186A JPS6381967A (en) 1986-09-26 1986-09-26 Lead frame preventive of falling of lead

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22602186A JPS6381967A (en) 1986-09-26 1986-09-26 Lead frame preventive of falling of lead

Publications (1)

Publication Number Publication Date
JPS6381967A true JPS6381967A (en) 1988-04-12

Family

ID=16838541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22602186A Pending JPS6381967A (en) 1986-09-26 1986-09-26 Lead frame preventive of falling of lead

Country Status (1)

Country Link
JP (1) JPS6381967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654585A (en) * 1994-09-30 1997-08-05 Nec Corporation Semiconductor device with at least one lead having a plurality of bent portions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654585A (en) * 1994-09-30 1997-08-05 Nec Corporation Semiconductor device with at least one lead having a plurality of bent portions

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