JPS6381870A - Semiconductor light emitting device - Google Patents

Abstract

PURPOSE:To obtain linear light emission with excellent convergence and uniformity by a method wherein at least one protruding stripe which is extended on one surface of a plane part crossing the surface is provided and a light emitting region which includes P-N junctions which is provided in the protruding stripe along its whole length is formed. CONSTITUTION:This light emitting device is composed of an N-type GaAs plane part (substrate) B, a narrow square pillar shape protruding stripe P which is made of N-type GaAs and formed linearly on one surface of the substrate B, positive side electrodes E1 which are provided on both the sides of the protruding stripe P and on the surface of the substrate B where the protruding stripe P is formed, a negative side electrode E2 which is provided on the bottom surface of the substrate B and insulating films 1 which are provided between the upper surface of the substrate B and the electrodes E1. In the protruding stripe P, a P-type impurity is diffused along both the side walls of the protruding stripe P to form a light emitting region which is extended vertically to the substrate B and P-N junctions PN are formed at the diffusion fronts of the impurity. When a current is applied between the electrodes E1 and E2, light is emitted linearly to the vertical direction to the substrate B by the light emitting region including the P-N junctions PN in the protruding stripe P. The current flows through the P-N junctions PN from the electrodes E1 on both the sides of the protruding stripe P into the electrode E2 on the bottom surface of the substrate B.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a surface-emitting type semiconductor light-emitting device, and particularly to a semiconductor light-emitting device that is most suitable for inspection of tapes, display of OAi equipment, etc., or optical fiber communication. It is related to.

[Problems to be solved by conventional technology/invention] Usually,
Light emitting diodes (LEDs) are generally made of - LEDs attached to a stem electrode, or the entire LED is molded in resin, and the size of the LED itself is approximately 30 mm in length x width.
0 x 300- is common and very small, and furthermore, the light emission is dotted due to the size of the LED itself. Therefore, as shown in FIGS. 14(a) and 14(bl), when used for tape inspection, for example, a plurality of LHDlOs arranged in a line corresponding to the width of the tape W are used in a linear form. 12 is a light receiver that receives the light from the light source 11.

However, tape inspection requires a light source that emits light as uniformly and linearly as possible, but LEs have different performances such as luminance brightness, modulation characteristics, and luminous efficiency, and the light emitting area of the LED is a flat plate. Since it extends in a direction parallel to the flat plate part (including the substrate and layers made of various materials provided on the substrate), the radiation angle of light should be avoided to be large to some extent. Placing LEDs at regular intervals inevitably reduces the sensitivity of the test.Also, multiple LEDs (more LEDs are required to increase the sensitivity of the test by reducing the spacing between LEDs). As mentioned above, a light source including a plurality of LEDs arranged in an array becomes very expensive.

The above applies not only to inspection but also to display of OA equipment. Moreover, when used by coupling to an optical fiber for communication, especially when coupling a large number of LEDs to the optical fiber, the alignment and coupling work becomes very troublesome.

Therefore, an object of the present invention is to provide a semiconductor light-emitting element that has excellent light convergence and emits linear light, which is suitable for inspection of tapes, display of OA equipment, or optical fiber communication.

[Means for solving problems]

The purpose is to consist of a flat plate part, at least one protrusion extending across the surface on one side of the flat plate part, and an electrode provided at an arbitrary location on the flat plate part and the protrusion. This is achieved by a semiconductor light emitting device having a light emitting region including a pn junction extending perpendicularly to the section.

The semiconductor light emitting device of the present invention is particularly characterized by the length of the protrusion on the flat plate portion, and the length is at least 100 to 75 mm.
000J-, the light emission is linear, unlike the point-like light emission of conventional light emitting diodes. Furthermore, by selecting the length within the above range according to the purpose, various types of linear light emission can be obtained.

〔Example〕

Hereinafter, the semiconductor light emitting device of the present invention will be explained based on Examples. A first example of the semiconductor light emitting device of the present invention is shown in FIG. 1(a).
, (shown in bl). This light emitting device consists of a flat plate part (substrate) B made of n-type GaAs, and an n-type Ga As provided linearly from one edge to the other edge on one side of the substrate B.
An elongated rectangular prism-like projection P made of As (the length can be arbitrarily selected within the above range), both sides of the projection P, and the surface of the substrate B on the side on which the projection P is formed (the upper surface of the substrate B)
The p-side electrode E1 provided on the bottom surface of the substrate B, and the n(!) provided on the bottom surface of the substrate B.
It is composed of a III electrode E2 and an insulating film 1 interposed between the upper surface of the substrate B and the electrode E1. Inside the protrusion P,
A p-type impurity is diffused along both side surfaces to form a light emitting region extending perpendicularly to the substrate B, and a pn junction PN is formed at the diffusion front.

In the light-emitting element of this example, when a current is injected between the electrodes E1.62, the light-emitting region including the pn junction PN in the protrusion P causes the light-emitting element to be substantially perpendicular to the substrate B over the entire length from the protrusion P to the protrusion P. It emits light in a linear direction. Moreover, although the current flows from the electrode E1 on both sides of the protrusion P through the pn junction PN to the electrode E2 on the bottom surface of the substrate B, it does not flow from the electrode E1 on the top surface of the substrate B to the electrode E2 due to the insulating film l. , the efficiency of current injection into the light emitting region is improved, resulting in an increase in light output.

Since such a light-emitting element is a horizontal type having a light-emitting region extending perpendicularly to the substrate B, the light from the light-emitting region has excellent convergence and is uniformly emitted in a linear manner. Ideal for inspection, display, or communication, for example, when combined with an optical fiber and used for communication, the protrusion P
A linear (-dimensional) array of optical fibers aligned over the entire length of the projection P can be easily coupled to the top surface of the protrusion P, and only one light emitting element is used. Unlike the case where EDs are used, there are no problems due to differences in performance between individual LEDs, and light with uniform brightness can be transmitted to the optical fiber. When this light-emitting element has a size corresponding to the width of the tape and is used for inspecting the tape, uniform light can be irradiated over the entire width of the tape, making it possible to improve the quality of inspection.

In the above embodiment, the cross-sectional shape of the protrusion P is as shown in FIG.
Although it has a rectangular shape as shown in a), there is no particular limitation on this, and for example, it can be made into a trapezoid shape as shown in width) and -J? [The light may be focused so as to be easily focused, or (the light may be made into an inverted trapezoidal shape as shown in C1, and the light may be completely destroyed depending on the purpose of use.)

Furthermore, the planar shape of the protrusion P does not have to be rectangular, and as shown in FIGS. By making the planar shape of the protrusion (2) into such a shape, the excitation of light in the direction parallel to the substrate B in the light emitting region is suppressed compared to the case where no recess is provided, and the excitation of light in the direction parallel to the substrate B is suppressed. On the other hand, since the excitation of light in the vertical direction is further promoted and the light emitting area is substantially increased, efficient and high brightness light emission in the vertical direction can be obtained.

The light emitting device shown in FIG. 4 is a two-dimensional array of the one shown in FIG. For this purpose, optical fibers arranged in three rows to form a two-dimensional array may be used. A light emitting element in which multiple protrusions P are provided on a substrate B depending on the purpose can be easily coupled with an optical fiber and is extremely convenient in practice.

Next, an example of a method for manufacturing a semiconductor light emitting device having the structure shown in FIG. 1 will be described using an n-type GaAs substrate with reference to FIGS. , it is sufficient to use a light emitting element having a length of one protrusion in the vertical or horizontal direction depending on the purpose of the light emitting element. For example, when manufacturing a light emitting element with a total length of the protrusion of 1 to 2 cI What is necessary is to use a substrate having a long length.Also, the thickness of the substrate is usually 300 to 500 mm.
It is P@.

First, a known masking agent (for example, silicon nitride, silicon oxide, etc.) is applied to the entire upper surface of the n-type GaAs substrate B (see FIG. 5 fa) by electron beam evaporation, sputtering, CVD, etc. Mask layer 1' is applied (see FIG. 5)).

Next, in order to perform photolithography, a resist R is coated on the upper surface of the mask layer l', and a pattern of a desired width and length (a planar shape of the -striped protrusions P, in this case an elongated rectangular pattern) is formed. , the same pattern as shown in FIGS. 3(a) to (C)) is exposed and developed approximately in the center of the upper surface of the mask layer 1'' (see FIG. 5(C1)).
(see FIG. 5), the mask layer 1° is etched by NH, F-11P buffer etching or the like (see FIG. 5, 111).

After etching, for example, reactive ion etching method (R
rE) or reactive ion beam etching (RI)
The above n -GaAs-based FiB is ion-etched to a predetermined depth by B E) to form a long and thin protrusion P made of n -GaAs having a predetermined height on the substrate B (see FIG. 5(e)). ), the mask layer 1'' and the resist R applied in the above process are present on the top surface of the protrusion P, but the mask layer 1'' and the resist R are left in the state (not left). It is preferable to keep the
A mask N1 is provided on the upper surface of the resist R on the projection P and on the upper surface of the substrate B using the same masking agent as described above (see FIG. 5 (fl). After making the mask state, p-type impurity (
Preferably zinc) is diffused to form a diffusion region (preferably zinc) in the protrusion P extending perpendicularly to the substrate B along both side surfaces of the protrusion P.
This region is made of p-type GaAs, thereby forming a pn junction PN at the interface between the region where impurities are not diffused and the diffusion front (see FIG. 5(g)). .

After the diffusion process, an electrode E1 made of, for example, Cr-Au is provided as a p-side electrode material on both sides of the protrusion P, the upper surface of the mask layer 1 on the protrusion P, and the upper surface of the substrate B, and an electrode E1 made of, for example, Cr-Au is provided on the lower surface of the substrate B. For example, the electrode E2 is made of Au-Ge as the electrode material.
is provided by means such as vacuum evaporation (see FIG. 5 (hl)), and then the electrode E1, resist R, and mask layer 1.1° on the protrusion P are removed by a lift-off method (see FIG. 5, 111). , as shown in FIGS. 1(al and bl), has a long and thin protrusion P on the substrate B, and has a light emitting region including a pn junction PN extending perpendicularly to the substrate B within the protrusion P. , a semiconductor light emitting device with an emission wavelength of 890 to 960 nm is manufactured.

The light-emitting device of the above example was manufactured using only an n-GaAs substrate, but by changing the light-emitting material, that is, by using a material with a different forbidden band width of a compound semiconductor, the emission wavelength could be changed. Examples of light-emitting materials that can be varied include GaAs, GaP, AlGaAs, InP, which are m-v group compound semiconductors.
, InGaAsP, InGaP, 1nAIP,
GaAsPSGaN.

Zn5e, ZnS, ZnO, CdSe, which are II-Vl group compound semiconductors such as InAsP and TnAsSb
, P, which is an IV-VT group compound semiconductor such as CdTe.
bTe, Pb5nTe, Pb5nSe, etc., and T
There are V-TV group compound semiconductors such as SiC, and each material can be applied by taking advantage of its advantages. For example, a pn junction may be formed by epitaxially growing an n-AIGaAs layer on an n-GaAs substrate, forming protrusions from the epitaxially grown layer, and diffusing p-type impurities.

In the second embodiment of the semiconductor light emitting device of the present invention shown in FIG.
1, an elongated rectangular prism-like protrusion P made of n-type AlGaAs provided linearly from one edge to the other edge on one side of the substrate B1, one side of the protrusion P, and the upper surface of the substrate Bl. , and an n-side electrode E2 provided on the other side surface of the protrusion P and the side surface of the substrate B1. In the protrusion P, a p-type impurity is diffused along the surface where the electrode El is provided, and a light emitting region extending perpendicularly to the substrate B1 is formed, and a pn junction PN is formed at the diffusion front. ing.

Similarly, in the light-emitting element of this embodiment, when a current is injected between the electrodes 1iE1.82, the light-emitting region including the pn junction PN in the protrusion P substantially extends from the protrusion P to the substrate B1 over the entire length of the protrusion P. The light is emitted vertically and linearly.

Moreover, the current flows from the electrode E1 on one side of the protrusion P to pn
An electrode E on the other side of the protrusion P vertically penetrates the junction PN.
However, since the substrate B1 is a semi-insulating substrate, no current flows inside the substrate B1, and the current flows through the electrode E1.82.
Since the current flows through the shortest path between the two, the efficiency of current injection into the light emitting region is further improved, resulting in an increase in optical output, a reduction in device capacitance, and an improvement in modulation characteristics.

In the second embodiment described above, the cross-sectional shape of the protrusion P is rectangular as in the first embodiment, but this is not particularly limited, and as shown in FIGS. The projection P may have a trapezoidal shape or an inverted trapezoidal shape, and the planar shape of the projection P does not have to be rectangular. As shown in FIG.
A concave portion such as a triangle or a semicircle is formed to suppress the excitation of light in the direction parallel to the substrate B1 in the light emitting region, further promote the excitation of light in the direction perpendicular to the substrate B1, and to substantially reduce the The upper light emitting area may be increased to obtain efficient and bright light emission in the vertical direction.

Next, an example of a method for manufacturing a semiconductor light emitting device having the structure shown in FIG. 6 is shown in FIG. 7 (al to +11 I will explain while referring to it.

First, a liquid phase epitaxial growth method (LPE) was applied to the entire upper surface of the Sl-GaAs substrate Bl (see Fig. 7 (al)).
n-AlGa by molecular beam epitaxial growth (MBE), metal organic pyrolysis vapor deposition (MOCVD), etc.
As epitaxial growth [B2 is provided (see FIG. 7 (bl)), and the entire upper surface of this epitaxial growth 1iB2 is
The mask layer 1 is formed using a masking agent known per se (for example, silicon nitride, silicon oxide, etc., which are applied by electron beam evaporation, sputtering, CVD, etc.).
(see Figure 7 (C1)).

Next, in order to perform photolithography, a resist (resist) R is applied to the upper surface of the mask layer 1, and a pattern (a planar shape of the -striped projections P, in this case an elongated rectangular pattern) with a desired width and length is formed. Figure 3 (al~ (if the shape shown in C1, the same pattern) is exposed and developed approximately in the center of the upper surface of the mask layer 1. Figure 7 (see di) shows that the mask layer 1 is N11. Etch using F-IF buffer etching or the like (see FIG. 7 (el)).

After etching, the n-^lGaAs epitaxially grown JDB2 is ion-etched by RIE or ROBE, for example, to the substrate B1, and a long and thin protrusion P made of n-AIGaAs having a predetermined height is formed on the substrate B1 (Fig. 7). (See fl).On the top surface of the protrusion P, the mask layer 1 and the resist R applied in the above step are present, but the mask [1 and the resist I-
State in which R remains (it is preferable to leave it in place)
Then, a p-type impurity (preferably zinc) is diffused to form diffusion regions (including light-emitting regions) extending perpendicularly to the substrate B1 along both side surfaces of the protrusion P. At the same time, an enlarged region J1 extending in a direction parallel to the substrate Bl is formed in the substrate bl along its upper surface, and this region is made of p-type AlGaAs. A pn junction PN is formed at the interface between the region where impurities are not diffused and the diffusion front (see FIG. 7(a)).

After the diffusion step, the upper surface of the substrate B1 is ion-etched by RIB or RIBE to remove the diffusion region extending within the substrate al (see FIG. 7 (hl)).

Next, on both sides of the protrusion P, the upper surface of the resist R on the protrusion P, and the upper surface of the substrate B1, for example, Cr is applied as a p-side electrode material.
- Provide an electrode El made of Au by means such as vacuum evaporation (see Fig. 7 (11). Then, cut the whole in half from the protrusion P in the length direction of the protrusion P, see Fig. 7 fJl), and then cut. For example, Au is used as the n-side electrode material on the entire surface.
An electrode E2 made of -Ge is provided by means such as vacuum evaporation (see FIG. 7(k)).Finally, the electrode E1, resist R and mask N1 on the protrusion P are removed by a lift-off method (see FIG. 7(k)). (See Figure f11), Figure 6 (
A semiconductor light emitting device as shown in al and (bl) is manufactured.

As is clear from FIG. 6 and the manufacturing process described above, the light emitting device of this second embodiment is different from that of the first embodiment by the protrusion P.
Therefore, the first embodiment may be simply cut in half from the protrusion P after manufacturing.

FIG. 8 shows a modification of the second embodiment, which differs from that shown in FIG. 6 in that the diffusion region extending within the substrate al is not removed. By the way, such a light emitting element emits light in the direction perpendicular to the substrate B1 by the light emitting region including the pn junction PN formed in the protrusion P. It is sufficient that the light emitting region extends, and since the substrate B1 is semi-insulating,
Even if p-type impurities are diffused in this substrate Al, a diffusion region is formed, but a light emitting region including a pn junction is not formed.
Therefore, a structure in which the diffusion region extends within the substrate al may be used.

In the modified example shown in FIG. 9, the element is not cut in half, and the electrode E2 is connected to the side surface of the protrusion P and the substrate B in the same way as the electrode E1.
It is provided on the top surface of 1. This light emitting element has an electrode E
The feature is that the difficulty of wire bonding in No. 2 has been improved. That is, in the embodiments of FIGS. 6 and 8, since the electrode E2 is located on the side surface of the element, wire bonding is difficult<<, whereas wire bonding is easier if it is provided on the plane of the element.

Yet another modification example is shown in FIG. In the light emitting element shown in (al), the diffusion region is formed along the cut surface of the element, and the electrode E1 is provided on this cut surface. They do not undergo ion etching, and both have structures that take heat radiation into consideration. For example, as shown in Figure 10 TCI, the light emitting element is 5I
The electric IE2 is bonded onto a submount heat sink 3 made of SCuSBeO2SiC, diamond, ceramic, etc. using wire bonding, and the electric IE2 is connected to a wire 4 made of gold or the like.
By using wire bonding to connect the electrode E1 and attaching the lead terminal 5 made of A1, Au, etc. to the entire surface of the electrode E1, the heat generated in the light emitting region is transmitted through the lead terminal 5 and the heat sink 3 and is efficiently dissipated. That will happen.

Next, in the above-mentioned embodiments, all the light emitting regions including the pn junctions in the protrusions P are constituted by homojunctions, but this may be a single heterojunction or a double heterojunction, or a double heterojunction. FIGS. 11 and 12 show an example in which a light emitting region including a pn junction is constructed using a telojunction. First, in the light emitting device shown in FIG. 11, the substrate B1 is made of 5r-Ga.
The protrusion P is made of n-GaAs and a double heterostructure formed along one side of the protrusion P in the longitudinal direction of the protrusion P, and the p-side electrode E1 is formed on the top surface of the protrusion P. and the side surface where the n-side electrode E2 forms a double heterojunction of the protrusion P and the substrate B1.
It is formed on the top surface of. Double heterostructure At, A2. In A3, A1 is n AlxGa
+-1lAssA2 is pAlyGal-yAs,,
A3 consists of pA1tGa+-zAs, 81 and A
A pn junction is formed at the interface with 2.

By configuring the light emitting region with a double heterostructure, the confinement effect for current and light in the active region is increased, and as a result, the luminance can be increased compared to a homojunction or a single heterojunction.

The light emitting device shown in FIG. 12 is structurally almost the same as that shown in FIG.
A GaAs Bragg reflector 7 is provided so that it can be used as a laser diode. In this example, the presence of a double heterostructure also increases the confinement effect for current and light in the active region, resulting in a lower darkness value than that of a homojunction or a single heterojunction.
High output is possible.

An example of a method for manufacturing a semiconductor light emitting device having the structure shown in FIG. 11 will be described below with reference to FIG.
This will be explained with reference to t~(b)).

First, an Sl-GaAsi temporary Bl (see FIG. 13 (al) where n-GaAs epitaxial growth 1'iB2 is provided on the entire upper surface by LPE, MBE, MOCVD, etc. (see FIG. 13 middle)), and this epitaxial growth 788
A masking agent known per se (for example, silicon nitride, silicon oxide, etc. is exemplified, and these are applied by electron beam evaporation, sputtering, CVD method, etc.) over the entire upper surface of 2.
Mask layer 1 is applied (see FIG. 13 FC+).

Next, in order to perform photolithography, a resist (R) is applied to the upper surface of the mask layer 1 to form a desired pattern.
(See Fig. 3 fd+), and pattern the mask layer 1 by etching it using a dry method or a wet method (see Fig. 13 (
(see el).

After etching, for example by RIE or RIBE.”
2. One side of the n-GaAs epitaxial growth layer B2 is ion-etched until it slightly reaches the substrate B1.
A long and thin projection P made of n-GaAs and having a predetermined height is formed on the top (see FIG. 13, tfl).

Then, in order to form a double heterostructure, an nAlxGa1-Jq layer A is formed on one side of the protruding CP etched in the previous step.
1. , p-AI, Ga+-yAs layer A2, pAlG
AAs is sequentially grown epitaxially by MOCVD or the like to form a pn junction at the interface between iAl and A2 (see FIG. 13(g)).
The AI composition ratio X, y, 2 of aAs1i is, for example, X
=0~0.4, yo~0.1.2=0~0.4, x
>y<z, and JiA2 may be p-type, n-type, or undoped. After forming the double heterojunction, the mask layer 1 and resist R remaining on the top surface of the protrusion P In order to remove it by a lift-off method and perform photolithography again, a resist R' is applied to the upper surface of the substrate B1 to form a desired pattern.
h)), the top surface of the protrusion P is somewhat ion-etched by RIE or RIBE (see Fig. 13 (see 11)).
Then, using photolithography, a resist R' is applied to the top surface of the protrusion P on the side where the double heterojunction is to be formed to form a desired pattern (see FIG. 13).

Next, on the remaining part of the top surface of the protrusion P, an electric potential made of Cr-Au is provided as a p-side electrode material by means such as angled vacuum deposition (see Fig. 13 (kl)). , after that, the resists R', R remaining on the top surface of the protrusion P and the top surface of the substrate B1
Figure 13 (see 11)
, for example, Au-G as an n-side electrode material on the side surface of the protrusion P on the double heterojunction formation side and on the upper surface of the substrate B1 at i/&.
Electrode E2 consisting of e is provided by means such as angled vapor deposition similarly to electrode El (see Fig. 13 ((b)).
As a result, a semiconductor light emitting device as shown in FIG. 11 is manufactured.

The manufacturing process of the light emitting device shown in FIG. 12 is basically the same as that shown in FIG.
In the preparation step (3) shown in the figure, GaAs, AlG
A Bragg reflector 7 made of aAs may be provided and this may be subjected to a process (not shown).

In the present invention, the electrodes E1 and E2 are not limited to the sizes shown in the embodiments, but can be provided in any size as long as they can emit light in a direction perpendicular to the substrate B1. In addition, there are no particular restrictions on the method of forming the pn junction, such as impurity diffusion method, epitaxial vapor phase growth method of p (or n) type semiconductor layer and n (or p) type semiconductor layer (in this case, , it is also possible to perform different f1 junctions), or other methods may be used.

〔Effect of the invention〕

As is clear from the above, the semiconductor device element of the present invention includes:
By providing at least one protrusion extending across the surface on one side of the flat plate part and forming a light emitting region including a pn junction extending over the entire length within the protrusion, excellent focusing and uniform light emission can be achieved. It emits linear light, making it ideal for inspecting tapes, displaying OA equipment, and optical fiber communication. It is also easy to connect with optical fibers, and its manufacturing process is simple and can be produced in large quantities. It is extremely useful in practice, as it can be produced and any linear light emitting pattern can be obtained in the manufacturing process.

[Brief explanation of the drawing]

Fig. 1 fa), crest) shows the first embodiment of the semiconductor light emitting device of the present invention, (al is a perspective view thereof, ('b) is a sectional view, and Fig. 2 fal to (C1 is a A cross-sectional view showing an example of changing the cross-sectional shape of the protrusion of the light emitting element shown in FIG.
cl is a plan view showing an example of a change in the planar shape of the protrusion of the light emitting element shown in Fig. 1, Fig. 4 is a perspective view of a two-dimensional array of the light emitting elements shown in Fig. 1, and Fig. 5! 8)～(11
is a flow chart showing an example of the manufacturing process of the light emitting device shown in FIG. 1, FIG. 6 shows a second embodiment of the light emitting device of the present invention,
(al is a perspective view, fb) is a sectional view, Fig. 7 fat~
(11 is a flowchart showing an example of the manufacturing process of the light emitting device shown in FIG. 6, FIG. 8 is a cross-sectional view of a modification of the second embodiment, FIG. 9 is a cross-sectional view of another modification, and FIG. Figures (al to tel indicate yet another modification example, +al is a sectional view thereof, (bl
is a sectional view of a modified example of the one shown in (al), and (C) is a cross-sectional view of a modified example of the one shown in (a
11 is a sectional view of another embodiment of the light emitting device of the present invention, and FIG. 12 is a sectional view of still another embodiment of the light emitting device of the present invention. Figure 13 (a
l~((b) is a flowchart showing an example of the manufacturing process of the light emitting device shown in Fig. 11, and Figs. 14(al and ′b) are examples of the use of a single ship for testing conventional LEDs. B, Bl: flat plate part (substrate) B2.AI, A2.A3: epitaxial growth layer P: protrusion El, B2: electrode PN: p-n junction 1: insulating film (mask layer) 1゛: mask Layer RSR", R" Niresist patent applicant New Technology Development Corporation (and 6 others) (a) (a) Figure 2 (-) (ko) (b) (go) Figure 8 <a>(b' ) Figure 9 (C)

Claims (1)

[Claims] Consisting of a flat plate part, at least one protrusion extending across the surface on one side of the flat plate part, and an electrode provided at any location on the flat plate part and the protrusion, A semiconductor light emitting device characterized by having a light emitting region including a pn junction extending in a vertical direction.