JPS6373398U - - Google Patents
Info
- Publication number
- JPS6373398U JPS6373398U JP16507386U JP16507386U JPS6373398U JP S6373398 U JPS6373398 U JP S6373398U JP 16507386 U JP16507386 U JP 16507386U JP 16507386 U JP16507386 U JP 16507386U JP S6373398 U JPS6373398 U JP S6373398U
- Authority
- JP
- Japan
- Prior art keywords
- paper
- doctor
- paper web
- slit
- separates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 1
Landscapes
- Paper (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986165073U JPH0410239Y2 (en, 2012) | 1986-10-29 | 1986-10-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986165073U JPH0410239Y2 (en, 2012) | 1986-10-29 | 1986-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6373398U true JPS6373398U (en, 2012) | 1988-05-16 |
JPH0410239Y2 JPH0410239Y2 (en, 2012) | 1992-03-13 |
Family
ID=31094777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986165073U Expired JPH0410239Y2 (en, 2012) | 1986-10-29 | 1986-10-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0410239Y2 (en, 2012) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6876010B1 (en) | 1997-06-24 | 2005-04-05 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
US7049627B2 (en) | 2002-08-23 | 2006-05-23 | Amberwave Systems Corporation | Semiconductor heterostructures and related methods |
US7594967B2 (en) | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193592A (en) * | 1981-05-15 | 1982-11-27 | Valmet Oy | Means for cutting and guiding flange piece of paper web in papermaking machine |
JPS6296251A (ja) * | 1985-10-22 | 1987-05-02 | Kanzaki Paper Mfg Co Ltd | 通紙方法 |
-
1986
- 1986-10-29 JP JP1986165073U patent/JPH0410239Y2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193592A (en) * | 1981-05-15 | 1982-11-27 | Valmet Oy | Means for cutting and guiding flange piece of paper web in papermaking machine |
JPS6296251A (ja) * | 1985-10-22 | 1987-05-02 | Kanzaki Paper Mfg Co Ltd | 通紙方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6876010B1 (en) | 1997-06-24 | 2005-04-05 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
US7081410B2 (en) | 1997-06-24 | 2006-07-25 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
US7049627B2 (en) | 2002-08-23 | 2006-05-23 | Amberwave Systems Corporation | Semiconductor heterostructures and related methods |
US7368308B2 (en) | 2002-08-23 | 2008-05-06 | Amberwave Systems Corporation | Methods of fabricating semiconductor heterostructures |
US7375385B2 (en) | 2002-08-23 | 2008-05-20 | Amberwave Systems Corporation | Semiconductor heterostructures having reduced dislocation pile-ups |
US7594967B2 (en) | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
Also Published As
Publication number | Publication date |
---|---|
JPH0410239Y2 (en, 2012) | 1992-03-13 |