JPS6370422A - X-ray exposure mask - Google Patents
X-ray exposure maskInfo
- Publication number
- JPS6370422A JPS6370422A JP61215280A JP21528086A JPS6370422A JP S6370422 A JPS6370422 A JP S6370422A JP 61215280 A JP61215280 A JP 61215280A JP 21528086 A JP21528086 A JP 21528086A JP S6370422 A JPS6370422 A JP S6370422A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ray exposure
- exposure mask
- silicon substrate
- stencils
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012528 membrane Substances 0.000 claims abstract description 12
- 239000006096 absorbing agent Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 abstract description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052737 gold Inorganic materials 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 11
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical group CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract description 7
- 239000004642 Polyimide Substances 0.000 abstract description 7
- 229920001721 polyimide Polymers 0.000 abstract description 7
- 238000004380 ashing Methods 0.000 abstract description 2
- 239000011358 absorbing material Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 7
- 229910052582 BN Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［概要］
メンブラン上に透明電極としてのラングミュア・ブロジ
ェット膜を介在し、該ＬＢ腹膜上吸収体パターンを設け
たＸ線露光用マスクである。このようなＸ線露光用マス
クは、均一な膜厚の吸収体パターンを有するマスクにな
る。DETAILED DESCRIPTION OF THE INVENTION [Summary] This is an X-ray exposure mask in which a Langmuir-Blodgett film as a transparent electrode is interposed on a membrane, and the LB epiperitoneal absorber pattern is provided. Such an X-ray exposure mask has an absorber pattern with a uniform thickness.
［産業上の利用分野コ 本発明はＸ線露光用マスクの改善に関する。[Industrial application fields] The present invention relates to improvements in masks for X-ray exposure.
Ｘ線露光法は、紫外線露光法と同じく一括露光方式（ス
テップアンドレピート方式を含む）を採ることができ、
しかも、サブミクロン級の微細パターンを転写できるた
めに、今後のりソグラフィ技術として重要視されており
、その実用化のための開発努力がなされている。Like the ultraviolet exposure method, the X-ray exposure method can use the batch exposure method (including step-and-repeat method).
Moreover, because it is capable of transferring submicron-level fine patterns, it is considered important as a future lithographic technology, and efforts are being made to develop it for practical use.
従って、このようなＸ線露光法ではマスクが必須の重要
なもので、その高品質化が望まれている。Therefore, in such an X-ray exposure method, a mask is essential and important, and it is desired to improve its quality.
［従来の技術〕
Ｘ線露光用マスクの材料と構成については多くの研究が
発表されているが、例えば、メンブラン（ｍｅｍｂｒａ
ｎｅ ；膜）として窒化硼素（Ｂ Ｎ）を用い、Ｘ線吸
収体パターンとして金（Ａｕ）を形成する方式が知られ
ており、第４図にそのマスクの一例の断面を示している
。図中の１はＢＮ（メンブレン）、２はＩＴＯ膜、３は
金（Ａｕ）パターン、４はシリコン支持枠、５はパイレ
ックスリングである。[Prior Art] Many studies have been published regarding the materials and configurations of X-ray exposure masks.
A method is known in which boron nitride (BN) is used as the film and gold (Au) is formed as the X-ray absorber pattern, and FIG. 4 shows a cross section of an example of the mask. In the figure, 1 is a BN (membrane), 2 is an ITO film, 3 is a gold (Au) pattern, 4 is a silicon support frame, and 5 is a Pyrex ring.
なお、ＩＴＯ膜２はメッキ法で被着する金パターンの電
極とするために設けたもので、従って、この膜には透光
性と導電性とが要求される。このＩＴＯＯ２０酸化イン
ジウム（Ｉｎ２０３ ） ９５％、酸化錫（ＳｎＯ２）
５％ のＩｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅのことで、
透明な導電体膜として公知のものである。Note that the ITO film 2 is provided to serve as an electrode for a gold pattern deposited by plating, and therefore, this film is required to have translucency and conductivity. This ITOO20 indium oxide (In203) 95%, tin oxide (SnO2)
5% Indium Tin Oxide,
It is known as a transparent conductive film.
第５図ｆａｌ〜（ｄ）は第４図に示したＸ線露光用マス
クの形成工程順断面図を示しており、同図（ａ）はシリ
コン支持枠４．パイレックスリング５にＢＮ（メンブレ
ン）を形成したマスク基板の断面図で、形成法はシリコ
ン基板に化学気相成長（ＣＶＤ）法でＢＮＩ （膜厚
５μｍ程度）を被着し、片面にのみＢＮを残存させた後
、シリコン基板の反対面にパイレックスリング５を貼り
付け、最後にシリコン基板をエツチング除去して枠状の
シリコン支持枠４のみ残存させる。FIGS. 5 fal to 5 (d) are cross-sectional views in the order of the formation process of the X-ray exposure mask shown in FIG. 4, and FIG. This is a cross-sectional view of a mask substrate on which BN (membrane) is formed on a Pyrex ring 5. The formation method is to deposit BNI (film thickness of about 5 μm) on a silicon substrate by chemical vapor deposition (CVD), and apply BN only to one side. After the silicon substrate remains, a Pyrex ring 5 is attached to the opposite surface of the silicon substrate, and finally the silicon substrate is etched away, leaving only the frame-shaped silicon support frame 4.
次いで、第５図（ｂｌに示すように、マスク基板全面に
ＩＴＯ膜２をスパッタ法で被着する。このＩＴｏ膜２は
Ｘ線および光線を透過する必要があり、光線の透過はア
ライメント（位置合わせ）に光線を利用するからである
。Next, as shown in FIG. 5 (bl), an ITO film 2 is deposited on the entire surface of the mask substrate by sputtering. This ITO film 2 needs to transmit X-rays and light rays, and the transmission of light rays depends on the alignment (position). This is because light rays are used for alignment.
次いで、第５図（Ｃ）に示すように、ポリイミド６を膜
厚０．５〜２μｍ程度に積層し、このポリイミドをパタ
ーンニングして、ポリイミドからなるステンシル６を形
成する。このステンシル（５ｔｅｎｃｉｌ：型紙）５の
パターンニングは、公知の３層レジスト（トリレベル）
技術を用いておこなわれる。Next, as shown in FIG. 5C, polyimide 6 is laminated to a thickness of about 0.5 to 2 μm, and this polyimide is patterned to form a stencil 6 made of polyimide. The patterning of this stencil (5 stencil) 5 is performed using a known three-layer resist (tri-level).
It is done using technology.
次いで、第５図＜ｄ＋に示すように、ＩＴＯ膜２を電極
にして、ＩＴＯ膜２の上に金メッキする。そうすると、
ステンシル６の部分を除き、膜厚０．６〜１μｍの金パ
ターン２を被着することができる。Next, as shown in FIG. 5<d+, gold plating is applied onto the ITO film 2 using the ITO film 2 as an electrode. Then,
A gold pattern 2 having a thickness of 0.6 to 1 μm can be deposited except for the stencil 6 portion.
次いで、ステンシル６を溶解除去またはアッシング除去
して、第４図の断面図に示すような構造のＸ線露光用マ
スクが完成される。尚、最近、ステンシル６を残存させ
たままのマスクも利用されている。Next, the stencil 6 is removed by dissolving or ashing to complete an X-ray exposure mask having a structure as shown in the cross-sectional view of FIG. Incidentally, recently, masks in which the stencil 6 remains have also been used.
［発明が解決しようとする問題点コ
ところで、上記の形成工程において、ＩＴＯ膜２を電極
にして金パターンをメッキ法で被着すると、ＩＴＯ膜の
電気伝導率が安定していないために、均一な膜厚に金パ
ターンが形成されないと云う欠点がある。また、その応
力も高い圧縮応力であり好ましくない。[Problems to be Solved by the Invention] By the way, in the above-mentioned formation process, when a gold pattern is applied by plating using the ITO film 2 as an electrode, the electrical conductivity of the ITO film is not stable, so it is not uniform. The drawback is that the gold pattern cannot be formed to a certain thickness. Moreover, the stress is also high compressive stress, which is not preferable.
また、他の方法として、ＩＴＯ膜２の代わりに膜厚数十
Å以下の金膜をスパッタ法で被着して、これをメッキ電
極とする方法も公知となっているが、薄い金膜を制御性
良（被着することが難しく、特に、光を利用するアライ
メントが困難になると云う問題がある。In addition, as another method, a method is known in which a gold film with a thickness of several tens of angstroms or less is deposited by sputtering instead of the ITO film 2 and used as a plating electrode. Good controllability (difficult to deposit, especially alignment using light).
本発明は、これらの問題点を解消させるＸ線露光用マス
クを提案するものである。The present invention proposes an X-ray exposure mask that solves these problems.
［問題点を解決するための手段］
その問題は、メンブラン上に透明な導電性のラングミュ
ア・ブロジェット膜（以下、ＬＢ膜と呼ぶ）を介して、
吸収体パターンを設けたＸ線露光用マスクによって解決
される。[Means for solving the problem] The problem is solved by using a transparent conductive Langmuir-Blodgett film (hereinafter referred to as LB film) on the membrane.
This problem can be solved by using an X-ray exposure mask provided with an absorber pattern.
［作用］
即ち、本発明は、メンブラン上に透明電極膜としてＬＢ
膜を介在させる。そうすると、ＬＢ膜は均一な膜厚で、
導電性も一定しているから、均一な膜厚の吸収体パター
ン、例えば、金パターンが形成される。[Function] That is, the present invention provides LB as a transparent electrode film on a membrane.
Interpose a membrane. Then, the LB film has a uniform thickness,
Since the conductivity is also constant, an absorber pattern with a uniform thickness, for example, a gold pattern, is formed.
Ｌ Ｂ （Ｌａｎｇｍｕｉｒ−Ｂｌｏｄｇｅｔｔ）膜は
有機薄膜で、疎水基の末端に親水基をもつ両親媒性分子
を気・水界面に展開して安定な単分子膜に形成されるた
め、この単分子膜を固体表面に移しとって所望の層厚だ
け累積するもので、このようなＬＢ膜の一種として透明
な導電性膜が知られており、これを数分子層の膜厚でＢ
Ｎ膜の上に形成して、電極膜とするものである。LB (Langmuir-Blodgett) film is an organic thin film that is formed into a stable monomolecular film by expanding amphiphilic molecules with a hydrophilic group at the end of a hydrophobic group at the air/water interface. A transparent conductive film is known as a type of LB film, and this is transferred to a solid surface to a desired layer thickness.
It is formed on the N film to serve as an electrode film.
［実施例］ 以下、図面を参照して実施例によって詳細に説明する。[Example] Hereinafter, embodiments will be described in detail with reference to the drawings.
第１図は本発明にかかるＸ線露光用マスクの断面を示し
ており、１は膜厚３〜５μｍのＢＮ膜。FIG. 1 shows a cross section of an X-ray exposure mask according to the present invention, and numeral 1 indicates a BN film with a thickness of 3 to 5 μm.
１２は膜厚２００人の導電性ＬＢ膜、１３は膜厚０．６
〜１μｍの金パターン、４はシリコン支持枠、５はパイ
レックスリングである。12 is a conductive LB film with a film thickness of 200, and 13 is a film thickness of 0.6.
~1 μm gold pattern, 4 is a silicon support frame, and 5 is a Pyrex ring.
第２図は導電性ＬＢ膜を説明するための図で、同図（８
）はＬＢ膜構造のＸ型膜５Ｙ型膜、Ｚ型膜の３種のうち
、Ｙ型膜を模型化した図である。即ち、Ｙ型膜は親木基
を固体板面に向けて被着し、次に、疎水基（０で示して
いる）同士が向き合い、次に、親水基同士が向き合って
、かくして積層した累積膜である。このＹ型膜のうち、
ドナーとしてＮ−トコシルピリジニウム（記号および模
型（右側）を第２図（′ｂ）に示している）、アクセプ
タとしてＴＣＮＱアニオン（記号および模型（右側）を
第２図（０）に示している）を用いて、第２図（ｄｌに
示すように、１対ｌ錯体の単分子複合層を累積する。し
かし、このままでは導電性は大きくないから、沃素■２
蒸気を吸わせて構造を大きく変化させ、第２図（ｅ）に
示すようにＴＣＮＱの分子面を９０度回転させると、膜
面内方向に金属導電性が現れ、このようにして作成した
導電性ＬＢ膜をＢＮ上に成長させる。Figure 2 is a diagram for explaining the conductive LB film.
) is a model of a Y-type film among the three types of LB film structure: X-type film, Y-type film, and Z-type film. That is, the Y-type film is deposited with the parent wood group facing the solid plate surface, then the hydrophobic groups (indicated by 0) face each other, and then the hydrophilic groups face each other, thus forming a laminated stack. It is a membrane. Of this Y-type film,
N-tocosylpyridinium as donor (symbol and model (right side) shown in Figure 2 ('b)) and TCNQ anion as acceptor (symbol and model (right side) shown in Figure 2 (0) ) to accumulate a monomolecular composite layer of 1:1 complex as shown in Figure 2 (dl).However, since the conductivity is not high as it is, iodine 2
When vapor is inhaled to greatly change the structure and the molecular plane of TCNQ is rotated 90 degrees as shown in Figure 2(e), metallic conductivity appears in the in-plane direction of the film, and the conductivity created in this way LB film is grown on the BN.
次に、第３図（ａｌ〜（ｄｌは本発明にかかるマスクの
形成工程順断面図を示しており、同図ｆａｌは第５図（
ａｌと同様のマスク基板の断面図である。図中の記号ｌ
は膜厚３〜５μｍのＢＮ、４はシリコン支持枠、５はパ
イレックスリング、である。Next, FIGS. 3(al to dl) show cross-sectional views in the order of the formation process of the mask according to the present invention, and FIG.
FIG. 3 is a cross-sectional view of a mask substrate similar to al. Symbol l in the diagram
4 is a silicon support frame, and 5 is a Pyrex ring.
次いで、第３図（ｂｌに示すように、ＢＮＩの上に膜厚
３００人の導電性ＬＢ膜１２を、上記のようにして被着
する。この導電性ＬＢ膜は透明で導電性があり、Ｘ線は
勿論、光を十分に透過する。Next, as shown in FIG. 3 (bl), a conductive LB film 12 with a thickness of 300 mm is deposited on the BNI as described above. This conductive LB film is transparent and conductive. It can sufficiently transmit light as well as X-rays.
次いで、第３図（Ｃ）に示すように、ポリイミドかラナ
ルステンシル６を形成する。このステンシル５は、第４
図（Ｃ）で説明した従来法と同様に、膜厚０．５〜２μ
ｍのポリイミドを塗布してキュアし、これをパターンニ
ングしたものである。Next, as shown in FIG. 3(C), a polyimide ranal stencil 6 is formed. This stencil 5 is the fourth
Similar to the conventional method explained in Figure (C), the film thickness is 0.5 to 2μ.
This is obtained by applying and curing polyimide of No. m and patterning it.
次いで、第３図（ｄｌに示すように、そのステンシル５
を含む面上に導電性ＬＢ膜１２を電極にして、ステンシ
ル５の間に膜厚０．６〜１μｍの金パターン２を形成す
る。Then, as shown in Figure 3 (dl), the stencil 5
A gold pattern 2 having a thickness of 0.6 to 1 μm is formed between the stencils 5 using the conductive LB film 12 as an electrode.
次いで、ステンシル６を溶解除去またはアンシング除去
して、第１図の断面図に示すような本発明にかかるＸ線
露光用マスクを作成する。このＸ線露光用マスクは、均
一な金パターンが精度良く形成されており、非常に高品
質なマスクである。Next, the stencil 6 is removed by dissolving or unsinging to create an X-ray exposure mask according to the present invention as shown in the cross-sectional view of FIG. This X-ray exposure mask has a uniform gold pattern formed with high precision and is a very high quality mask.
尚、上記例は吸収体パターンを金パターンとしたが、金
パターンに限るものではない。In the above example, the absorber pattern is a gold pattern, but it is not limited to a gold pattern.
［発明の効果］
以上の説明から明らかなように、本発明によれば高品質
なＸ線露光用マスクが得られて、Ｘ線露光法の汎用化に
顕著に貢献するものである。[Effects of the Invention] As is clear from the above description, according to the present invention, a high-quality mask for X-ray exposure can be obtained, and it significantly contributes to the generalization of X-ray exposure methods.
第１図は本発明にかかるＸ線露光用マスクの断面図、
第２図は導電性ＬＢ膜を説明する図、
第３図（ａ）〜（ｄ）は本発明にかかるマスクの形成工
程順断面図、
第４図は従来のＸ線露光用マスクの断面図、第５図（５
）〜（ｄｌは従来のマスクの形成工程順断面図である。
図において、
１はＢＮ（メンブレン）、
２はＩＴＯ膜、
３．１３は金パターン、
４はシリコン支持枠、
５はパイレックスリング、
６はポリイミドからなるステンシル、
１２は導電性ＬＢ膜
序々Ｂ小二で１−３ 、Ｘ ！宇蕗支ｍ７スフＮ１１
図
第３図
Ｃ）エフ績
（ｄ’ ｌｈ Ｐ’−７’ｎ
＜ｅ） Ｔ２１−“−フ・を梨導を村ＬＢＩり
えｆ、説明ｊシコ
第２図Fig. 1 is a cross-sectional view of an X-ray exposure mask according to the present invention, Fig. 2 is a diagram illustrating a conductive LB film, and Fig. 3 (a) to (d) are order of forming steps of a mask according to the present invention. Figure 4 is a cross-sectional view of a conventional X-ray exposure mask, Figure 5 is a cross-sectional view of a conventional X-ray exposure mask.
) to (dl are cross-sectional views in the order of the conventional mask formation process. In the figure, 1 is a BN (membrane), 2 is an ITO film, 3.13 is a gold pattern, 4 is a silicon support frame, 5 is a Pyrex ring, 6 is a stencil made of polyimide, 12 is a conductive LB film, B is small, 1-3,
Figure 3 C) F score (d' lh P'-7'n
<e) T21-“-F.
Claims (1)
ェット膜を介して、吸収体パターンを設けたことを特徴
とするＸ線露光用マスク。An X-ray exposure mask characterized by having an absorber pattern provided on a membrane via a transparent conductive Langmuir-Blodgett film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61215280A JPS6370422A (en) | 1986-09-11 | 1986-09-11 | X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61215280A JPS6370422A (en) | 1986-09-11 | 1986-09-11 | X-ray exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6370422A true JPS6370422A (en) | 1988-03-30 |
Family
ID=16669701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61215280A Pending JPS6370422A (en) | 1986-09-11 | 1986-09-11 | X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6370422A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949538A3 (en) * | 1998-04-08 | 2000-02-23 | Lucent Technologies Inc. | Membrane mask for projection lithography |
-
1986
- 1986-09-11 JP JP61215280A patent/JPS6370422A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0949538A3 (en) * | 1998-04-08 | 2000-02-23 | Lucent Technologies Inc. | Membrane mask for projection lithography |
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