JPS6365066A - Substrate temperature controller for vapor deposition device - Google Patents
Substrate temperature controller for vapor deposition deviceInfo
- Publication number
- JPS6365066A JPS6365066A JP20867386A JP20867386A JPS6365066A JP S6365066 A JPS6365066 A JP S6365066A JP 20867386 A JP20867386 A JP 20867386A JP 20867386 A JP20867386 A JP 20867386A JP S6365066 A JPS6365066 A JP S6365066A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heat
- temp
- vapor deposition
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 239000003507 refrigerant Substances 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、牛導体素子及びディスプレーパネルの蒸着膜
形成に用いられる蒸着装置の基板温度制御装置に関する
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a substrate temperature control device for a vapor deposition apparatus used for forming vapor deposited films on conductor elements and display panels.
(従来の技術)
第3図は従来の蒸着装置’を示す。ペルジャーs内の基
板ホルダー1に固定した基板8七、ペルジャー内に設け
た赤外線ランプ9で加熱する。(Prior Art) FIG. 3 shows a conventional vapor deposition apparatus'. A substrate 87 fixed to the substrate holder 1 inside the Pelger s is heated with an infrared lamp 9 provided inside the Pelger.
その基板の温度は直接側ることが難しいから、従来を工
基版付近のペルジャー陽壁を貫通させたシース型熱電対
による指示値を基板温度とした。Since it is difficult to measure the temperature of the substrate directly, the substrate temperature was conventionally measured using a sheathed thermocouple that penetrated the Pelger positive wall near the base plate.
従って、基板温度の制御は、その指示値を赤外線ランプ
の電力制御Sにフィードバックして、ランプの加熱能力
を変化させることによって行わnている。即ち、この制
御方法では熱電対の指示値と基板温度とが一致している
との前提に基づくが、問題である。Therefore, the substrate temperature is controlled by feeding back the indicated value to the power control S of the infrared lamp to change the heating capacity of the lamp. That is, this control method is based on the premise that the indicated value of the thermocouple and the substrate temperature match, which is problematic.
(発明が解決しようとする問題点)
同一の熱源にさらされた場合でも、二つの異なりた物体
は必ずしも同!温度にならな一0温度とは、物質への熱
エネルギの出入の多寡によって決まる副次的状態量であ
る。仮に足常状態を仮定し、熱容量で大きく異なるエネ
ルギ蓄積量の時間的変化を無視するとしても、物質の表
面状態及び物性によりエネルギの出入量は一律とはなら
ない。ペルジャー内は通常高真空に保たれるので、熱の
授受は輻射伝熱の形式によって行われる。この場合問題
となるのは、物質固有の赤外線輻射率の差及び受熱と放
熱の差である。特に輻射率につ−てを工、7−ス型熱電
対に対して被蒸着物が特定されないため同一ではあり得
ない。また、輻射放熱量は輻射率に比例し、温度の4乗
に比例するため、高温になる程この差は重大なものとな
り、結果として異なる物体は異なる温度になる。(Problem to be solved by the invention) Two different objects are not necessarily the same even when exposed to the same heat source! Temperature is a secondary state quantity determined by the amount of heat energy entering and exiting a substance. Even if we assume a steady state and ignore temporal changes in the amount of stored energy, which varies greatly in terms of heat capacity, the amount of energy in and out will not be uniform depending on the surface condition and physical properties of the material. Since the inside of the Pelger is normally maintained at a high vacuum, heat is exchanged through radiation heat transfer. In this case, problems arise from the difference in infrared emissivity inherent to the materials and the difference between heat reception and heat radiation. Especially regarding the emissivity, it cannot be the same for the 7-space thermocouple because the deposited material is not specified. Furthermore, since the amount of radiant heat is proportional to the emissivity and is proportional to the fourth power of temperature, the higher the temperature, the more significant this difference becomes, and as a result, different objects have different temperatures.
(問題点を解決するための手段〉
以上の問題点にかんがみ、本発明者を子制御対象である
被蒸着物に密着した基板ホルダを直接温度制御する方法
上提供する。(Means for Solving the Problems) In view of the above problems, the present inventor provides a method for directly controlling the temperature of a substrate holder that is in close contact with an object to be deposited, which is a child control object.
本発明を工、抵抗加熱性成るいを;電子線衝撃法等の真
空蒸着装置又はスパッタリング蒸着装置において、被蒸
着物を固定する基板ホルダ金蒸発部とし、該ホルダーを
ペルジャーに固定するシャツトラ断熱部とし、ペルジャ
ー外に延長した該シャフトの9smt−凝m部としてヒ
ートパイプを構成し、凝縮部シャフト周辺に冷却用熱交
換器を付設した基板温度の制御装置である。In a vacuum evaporation apparatus such as an electron beam bombardment method or a sputtering evaporation apparatus, the present invention has a substrate holder gold evaporation part that fixes the object to be deposited, and a shirt holder heat insulating part that fixes the holder to a Pelger. This is a substrate temperature control device in which a heat pipe is configured as a 9smt-condensing section of the shaft extending outside the Pelger, and a cooling heat exchanger is attached around the condensing section shaft.
本発明を図によつて説明する。第1因において、基板ホ
ルダー1は熱の良導体からなる中空体で、他端を封じた
円筒状シャフトの一湖と連結してヒートパイプを構成す
る。この中空内部は、減圧下で予め伝熱媒体として作動
する液を少量射入し、また必要九応じて液の環流を促進
するウィック4を挿入する。基板ホルダー1に連結した
シャフト2の他端はペルジャー51にガスケット6を介
して貫通し、ペルジャー外の部分すなわち凝縮部には温
度制御のための熱交換器7を付設する。The present invention will be explained using figures. In the first factor, the substrate holder 1 is a hollow body made of a good thermal conductor, and is connected to a cylindrical shaft whose other end is sealed to form a heat pipe. A small amount of liquid acting as a heat transfer medium is previously injected into this hollow interior under reduced pressure, and a wick 4 for promoting circulation of the liquid is inserted as necessary. The other end of the shaft 2 connected to the substrate holder 1 passes through the Pel jar 51 via a gasket 6, and a heat exchanger 7 for temperature control is attached to the part outside the Pel jar, that is, the condensing section.
(作用)
被蒸着物である基板8は赤外線ランプ9によって加熱さ
れるが、スパッタリング装置では対面する高温ターゲッ
トからの熱輻射及び高速2次電子線照射によって加熱さ
れる。基板8の入射エネルギ蚤ユ熱伝導で基板ホルダー
1に伝えられる。ヒートパイプの蒸発器でもあるホルダ
ー内では、前記エネルギによって減圧封入さnている作
動液は容易に沸騰する。潜熱としてエネルギを受は取り
た作動液は、気体状態で低温低圧の凝縮部に音速近似の
速度で向かい、熱交換器の作用で冷却し凝縮して潜熱を
放出する。液体に戻った作動液は、重力及び表面張力で
ヒートパイプ内壁成るいはウィックを伝わり、蒸発部で
ある基鈑ホルダーに環流し、エネルギ伝達の1サイクル
を経る。ヒートパイプの特徴は、銅の熱伝導率の数百倍
に達する熱伝達率の大きさである。熱伝達率が特に大き
いために、ヒートパイプ全体の温度が均一となる。すな
わち、基板ホルダー1の温度制御は、凝縮部熱交換器の
冷媒温度て制御可能である。凝縮部と蒸発部の温度差は
、ヒートパイプの熱伝達特性に加えて熱交換器とクイッ
クの設計によって1℃以下とすることは容易である。(Function) The substrate 8, which is the object to be deposited, is heated by the infrared lamp 9, and in the sputtering apparatus, it is heated by thermal radiation from the facing high-temperature target and high-speed secondary electron beam irradiation. The incident energy of the substrate 8 is transmitted to the substrate holder 1 by thermal conduction. In the holder, which is also the evaporator of the heat pipe, the energy easily boils the sealed working fluid under reduced pressure. The working fluid, which has received and removed energy as latent heat, heads in a gaseous state to a low-temperature, low-pressure condensing section at a speed close to the speed of sound, where it is cooled and condensed by the action of a heat exchanger, releasing latent heat. The working fluid, which has returned to liquid form, travels through the inner wall of the heat pipe or wick due to gravity and surface tension, flows back to the base plate holder, which is the evaporation section, and undergoes one cycle of energy transfer. A feature of heat pipes is their high heat transfer coefficient, which is hundreds of times higher than that of copper. Due to the particularly high heat transfer coefficient, the temperature throughout the heat pipe is uniform. That is, the temperature of the substrate holder 1 can be controlled by the refrigerant temperature of the condenser heat exchanger. The temperature difference between the condensing section and the evaporating section can be easily set to 1° C. or less by the heat transfer characteristics of the heat pipe as well as the design of the heat exchanger and the quick.
実施例
第2図は本発明の1実施例である。蒸漕換の厚さを均一
にするため、特に点m源となる真空蓋溜装置ては基鈑ホ
ルダーを回転する装置lを併設する。ヒートパイプを構
成するシャフト2を回転軸として併用し、ペルジャー5
の外部にある海部で回転駆動部10に接続する。作動液
を工、150℃以下では水またはフレオン、300℃程
度までは水銀またはダウサム、さらに高温では金属ナト
リウムまたは金属カリウムが過半である。Embodiment FIG. 2 shows one embodiment of the present invention. In order to make the thickness of the steam exchange uniform, in particular, a vacuum lid storage device which serves as a point source and a device 1 for rotating the base plate holder are installed. The shaft 2 constituting the heat pipe is also used as a rotating shaft, and the Pelger 5
It is connected to the rotary drive unit 10 at a sea part located outside of the rotary drive unit 10 . The working fluid is mostly water or freon at temperatures below 150°C, mercury or dowsum up to about 300°C, and metallic sodium or potassium at higher temperatures.
(発明の効果)
本発明によって、基板と基鈑ホルダー〇熱抵抗管少な(
してシステム全体の熱設計を適切にすれば、基板温度を
±1℃以内のFlit度で制御可能である。(Effects of the invention) According to the present invention, the number of substrates and board holders, the number of heat resistance tubes (
If the thermal design of the entire system is made appropriate, the substrate temperature can be controlled within ±1°C.
ヒートパイプの特長の一つである大きな熱拡散率によっ
て、何らかの外乱で基板温度が変動した場合でも、設定
温度への復帰が速やかである。Due to the high thermal diffusivity, which is one of the features of heat pipes, even if the substrate temperature fluctuates due to some disturbance, it quickly returns to the set temperature.
基板温度の制御を熱交換器の冷媒温度制御に蓋換えるこ
とができ、ペルジャー外での操作が可能であっ℃システ
ムの構成が容易である。Control of substrate temperature can be replaced with refrigerant temperature control of a heat exchanger, operation can be performed outside the Pelger, and the configuration of the °C system is easy.
すなわち、本発明によつて、熱応 性に優n。That is, the present invention provides excellent thermal response.
定常非定常を問わず基板温度の設定及び安定化が容易な
システムを実現することが可能となった0It has become possible to realize a system that allows easy setting and stabilization of the substrate temperature regardless of whether it is steady or unsteady.
第1図を工率発明の基本構成を説明する正面図、第2図
は本発明の一実施例を示し、第3図を工従来の蒸着装置
の概略図を示すものでそnぞn正面図である。
1 基板ホルダー 2 シャフト
3 作動液 4 ウィック
5 ペルジャー 6 ガスケット
7 熱交換器 8 基板(被蒸着物ン9 赤外線
ランプ 10 回転駆動部第1図
第2図Fig. 1 is a front view illustrating the basic configuration of the invention, Fig. 2 shows an embodiment of the invention, and Fig. 3 is a schematic diagram of a conventional vapor deposition apparatus. It is a diagram. 1 Substrate holder 2 Shaft 3 Hydraulic fluid 4 Wick 5 Pelger 6 Gasket 7 Heat exchanger 8 Substrate (deposited material) 9 Infrared lamp 10 Rotation drive unit Fig. 1 Fig. 2
Claims (1)
はスパッタリング蒸着装置において、被蒸着物を固定す
る基板ホルダーを蒸発部とし、該ホルダーをペルジャー
に固定するシャフトを断熱部とし、ペルジャー外に延長
した該シャフト端部を凝縮部としてヒートパイプを構成
し、凝縮部シャフト周辺に設けた熱交換器の冷媒温度を
以て制御することを特徴とする蒸着装置の基板温度制御
装置。1. In a vacuum evaporation device or a sputtering evaporation device using resistance heating method, electron beam impact method, etc., the substrate holder that fixes the object to be evaporated is used as the evaporation part, and the shaft that fixes the holder to the Pelger is used as the heat insulating part. A substrate temperature control device for a vapor deposition apparatus, characterized in that a heat pipe is configured using the extended end of the shaft as a condensing section, and the temperature of a refrigerant in a heat exchanger provided around the condensing section shaft is controlled.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20867386A JPS6365066A (en) | 1986-09-04 | 1986-09-04 | Substrate temperature controller for vapor deposition device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20867386A JPS6365066A (en) | 1986-09-04 | 1986-09-04 | Substrate temperature controller for vapor deposition device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6365066A true JPS6365066A (en) | 1988-03-23 |
Family
ID=16560162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20867386A Pending JPS6365066A (en) | 1986-09-04 | 1986-09-04 | Substrate temperature controller for vapor deposition device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6365066A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10022159A1 (en) * | 2000-05-09 | 2001-11-29 | Deutsch Zentr Luft & Raumfahrt | Substrate holding arrangement for coating devices comprises a tempering device and a holder having an inner chamber system with a chamber region containing a fluid which vaporizes in a partial region and condenses in another region |
US6666949B1 (en) * | 1999-11-19 | 2003-12-23 | Thermodigm, Llc | Uniform temperature workpiece holder |
-
1986
- 1986-09-04 JP JP20867386A patent/JPS6365066A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6666949B1 (en) * | 1999-11-19 | 2003-12-23 | Thermodigm, Llc | Uniform temperature workpiece holder |
DE10022159A1 (en) * | 2000-05-09 | 2001-11-29 | Deutsch Zentr Luft & Raumfahrt | Substrate holding arrangement for coating devices comprises a tempering device and a holder having an inner chamber system with a chamber region containing a fluid which vaporizes in a partial region and condenses in another region |
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